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Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns |
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Titel: |
Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns |
Auteur: |
Cordier, Y. Semond, F. Moreno, J-C. Frayssinet, E. Benbakhti, B. Cao, Z. Chenot, S. Nguyen, L. Tottereau, O. Soltani, A. Blary, K. |
Verschenen in: |
Materials science in semiconductor processing |
Paginering: |
Jaargang 12 (2009) nr. 1-2 pagina's 5 p. |
Jaar: |
2009 |
Inhoud: |
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Uitgever: |
Elsevier Ltd |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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