Digitale Bibliotheek
Sluiten Bladeren door artikelen uit een tijdschrift
 
Zoeken naar met titel:
ABCDEFGHIJKLMNOPQRSTUVWXYZ

     Tijdschrift beschrijving
       Alle jaargangen van het bijbehorende tijdschrift
         Alle afleveringen van het bijbehorende jaargang
                                       Alle artikelen van de bijbehorende aflevering
 
                             69 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Acknowledgment 1992
 1 2-4 p. xvii-
1 p.
 artikel
2 A new method for the generation of diamond nuclei by plasma CVD Yugo, S.
 1992
 1 2-4 p. 388-391
4 p.
 artikel
3 Annihilation of nucleation sites during diamond CVD Jeoung Woo Kim,
 1992
 1 2-4 p. 200-204
5 p.
 artikel
4 A study on synthesis of diamond by capacitively coupled RF plasma-assisted chemical vapor deposition Lee, S.R.
 1992
 1 2-4 p. 235-238
4 p.
 artikel
5 Atomic configuration at the β-SiCc(2 × 2) reconstructed surface Badziag, P.
 1992
 1 2-4 p. 285-289
5 p.
 artikel
6 Author index 1992
 1 2-4 p. xix-xxx
nvt p.
 artikel
7 Characterisation of the AgC:H deposition process Harnack, J.T.
 1992
 1 2-4 p. 301-306
6 p.
 artikel
8 Characterization of a CH4-RF-plasma by ion flux, Langmuir probe, and optical emission spectroscopy measurements Weiler, M.
 1992
 1 2-4 p. 121-126
6 p.
 artikel
9 Characterization of diamond-like carbon films by fine scale indentation measurements Smith, J.
 1992
 1 2-4 p. 355-359
5 p.
 artikel
10 Combustion flame grown diamond films Golozar, M.A.
 1992
 1 2-4 p. 262-266
5 p.
 artikel
11 Complications of halogen-assisted chemical vapor deposition of diamond Wong, M.S.
 1992
 1 2-4 p. 369-372
4 p.
 artikel
12 Conference calendar 1992
 1 2-4 p. xxvii-
1 p.
 artikel
13 Correlation between ion-flux and microstructure of a-C:H films Ehrhardt, H.
 1992
 1 2-4 p. 316-320
5 p.
 artikel
14 Cumulative author index 1992
 1 2-4 p. xxix-xxxx
nvt p.
 artikel
15 Cumulative subject index 1992
 1 2-4 p. xxx-
1 p.
 artikel
16 Defined etching of carbon-diamond films on silicon using an oxygen plasma with titanium masking Chan, K.K.
 1992
 1 2-4 p. 281-284
4 p.
 artikel
17 Deposition of non-graphitic carbon films by low carbon particle energies Ullmann, J.
 1992
 1 2-4 p. 321-327
7 p.
 artikel
18 Determination ofsp3/sp2 ratio in diamond-like films of a-C:H Demichelis, F.
 1992
 1 2-4 p. 298-300
3 p.
 artikel
19 Diamond crystallites nucleation on sintered tungsten: temperature and thermal treatment effects Polini, R.
 1992
 1 2-4 p. 205-210
6 p.
 artikel
20 Diamond film preparation by arc-discharge plasma-jet-CVD and thermodynamic calculation of the equilibrium gas composition Boudina, A.
 1992
 1 2-4 p. 380-387
8 p.
 artikel
21 Diamond film synthesis on Mo in thermal RF plasma Hernberg, R.
 1992
 1 2-4 p. 255-261
7 p.
 artikel
22 Diamond-like films deposition by magnetron sputtering with additional ionization Chuzhko, R.K.
 1992
 1 2-4 p. 332-333
2 p.
 artikel
23 Diffusion of implanted nickel in diamond Filipp, A.R.
 1992
 1 2-4 p. 271-276
6 p.
 artikel
24 DLC film preparation by LASER-ARC and properties study Scheibe, H.-J.
 1992
 1 2-4 p. 98-103
6 p.
 artikel
25 Doping of amorphous-hydrogenated carbon films by ion implantation Amir, O.
 1992
 1 2-4 p. 364-368
5 p.
 artikel
26 E-BN crystallization under thermodynamic instability (p,T) conditions Sokołowska, A.
 1992
 1 2-4 p. 334-336
3 p.
 artikel
27 Effects of UV irradiation on the growth of diamond at lower temperatures Kamo, M.
 1992
 1 2-4 p. 104-108
5 p.
 artikel
28 Electron beam assisted deposition of sharp needles from a decomposed gas mixture of methane and hydrogen Abe, Atsuyoshi
 1992
 1 2-4 p. 267-270
4 p.
 artikel
29 Epitaxial growth of diamond thin films on foreign substrates Inuzuka, Tadao
 1992
 1 2-4 p. 175-179
5 p.
 artikel
30 Epitaxial growth of unintentionally p-type doped β-SiC single crystal layers Weber, Thomas
 1992
 1 2-4 p. 147-150
4 p.
 artikel
31 Epitaxial thin film growth, characterization and device development in monocrystalline α- and β-silicon carbide Davis, Robert F.
 1992
 1 2-4 p. 109-120
12 p.
 artikel
32 Etching of polycrystalline diamond and amorphous carbon films by RIE Dorsch, O.
 1992
 1 2-4 p. 277-280
4 p.
 artikel
33 Growth mechanisms of diamond crystals and films prepared by chemical vapor deposition Bonnot, A.M.
 1992
 1 2-4 p. 230-234
5 p.
 artikel
34 Growth of cubic boron nitride from vapor phase Saitoh, Hidetoshi
 1992
 1 2-4 p. 137-146
10 p.
 artikel
35 High-temperature epitaxy of diamond in a turbulent flame Snail, K.A.
 1992
 1 2-4 p. 180-186
7 p.
 artikel
36 Hydrogen distribution and heterogeneity of chemical bonds in surface and internal layers of a-C:H films Ralchenko, V.G.
 1992
 1 2-4 p. 345-349
5 p.
 artikel
37 Identification of structural defects in diamond-like films based on the comparison of X-rayCK α emission spectra with simple band structure calculations Kurmaev, E.Z.
 1992
 1 2-4 p. 337-340
4 p.
 artikel
38 Inelastic neutron scattering of amorphous hydrogenated carbon Honeybone, P.J.R.
 1992
 1 2-4 p. 293-297
5 p.
 artikel
39 Influence of gas phase parameters on the deposition kinetics and morphology of thin diamond films deposited by HFCVD and MWCVD technique Beckmann, R.
 1992
 1 2-4 p. 164-167
4 p.
 artikel
40 In-situ investigation of low-pressure diamond growth by elastic scattering of light and reflectance spectroscopy Bonnot, A.M.
 1992
 1 2-4 p. 161-163
3 p.
 artikel
41 Interface structures for epitaxy of diamond on Si(100) Verwoerd, W.S.
 1992
 1 2-4 p. 195-199
5 p.
 artikel
42 Ion beam assisted growth of dense diamond-like carbon Andre´, B.
 1992
 1 2-4 p. 307-311
5 p.
 artikel
43 Low-temperature deposition of diamond in a temperature range from 70 °C to 700 °C Ihara, M.
 1992
 1 2-4 p. 187-190
4 p.
 artikel
44 Low temperature diamond film fabrication using magneto-active plasma CVD Yuasa, M.
 1992
 1 2-4 p. 168-174
7 p.
 artikel
45 Material properties of CVD diamond produced by the DC arc-jet Lu, G.
 1992
 1 2-4 p. 134-136
3 p.
 artikel
46 Mechanism of substrate heating in diamond-forming low-pressure microwave discharges Ohl, A.
 1992
 1 2-4 p. 243-247
5 p.
 artikel
47 Monte-Carlo studies of energy characteristics of carbon plasma fluxes at deposition of diamond-like films Lyubimov, V.V.
 1992
 1 2-4 p. 290-292
3 p.
 artikel
48 New developments in the growth of epitaxial cubic boron nitride and diamond films on silicon Clarke, R.
 1992
 1 2-4 p. 93-97
5 p.
 artikel
49 NMR characterisation of Si-based ultrafine laser formed powders Tougne, P.
 1992
 1 2-4 p. 360-363
4 p.
 artikel
50 Nucleation and growth of diamond particles from the vapor phase Kostadinov, Ljubomir
 1992
 1 2-4 p. 157-160
4 p.
 artikel
51 Polycrystalline diamond field-effect transistors Tessmer, A.J.
 1992
 1 2-4 p. 89-92
4 p.
 artikel
52 Preface to the proceedings of the 2nd European conference on diamond, diamond-like and related coatings, Nice, France, September 2–6, 1991 Bachmann, Peter K.
 1992
 1 2-4 p. xv-
1 p.
 artikel
53 Radio-frequency hot-filament CVD of diamond Mitura, Stanislaw
 1992
 1 2-4 p. 239-242
4 p.
 artikel
54 Rapid synthesis of diamond by counter-flow liquid injection into an atmospheric pressure plasma jet Pfender, E.
 1992
 1 2-4 p. 127-133
7 p.
 artikel
55 RF-deposited a-C:H films from hydrogen-rich methane mixtures: relationships among plasma characteristics, deposition rates, and material properties Barbarossa, V.
 1992
 1 2-4 p. 328-331
4 p.
 artikel
56 Selected area diamond deposition by control of the nucleation sites Higuchi, K.
 1992
 1 2-4 p. 220-229
10 p.
 artikel
57 Some physical properties of diamond films grown by d.c.-glow discharge-enhanced hot-filament assisted chemical vapour deposition Fabisiak, K.
 1992
 1 2-4 p. 83-88
6 p.
 artikel
58 Subject index 1992
 1 2-4 p. xxi-xxvi
nvt p.
 artikel
59 Submicron characterization of B-C:H thin films produced by RF plasma CVD Garci´a, A.
 1992
 1 2-4 p. 350-354
5 p.
 artikel
60 Substrate temperature influence of c-BN thin film formation by IBED Tanabe, N.
 1992
 1 2-4 p. 151-156
6 p.
 artikel
61 TEM observations of diamond films prepared by microwave plasma CVD Eto, H.
 1992
 1 2-4 p. 373-379
7 p.
 artikel
62 The effect of deposition conditions on carbon films prepared by laser ablation Gorbunov, A.A.
 1992
 1 2-4 p. 312-315
4 p.
 artikel
63 The effect of silicon surface preparation on the nucleation of diamond by chemical vapor deposition Avigal, Y.
 1992
 1 2-4 p. 216-219
4 p.
 artikel
64 The influence of methane concentration, substrate temperature, and pressure on the morphology of diamond films grown by dc plasma jet CVD Boudina, A.
 1992
 1 2-4 p. 248-254
7 p.
 artikel
65 The Raman spectroscopy of diamond films deposited on metal and insulator substrates with varying thermal expansion coefficient Fabisiak, K.
 1992
 1 2-4 p. 77-82
6 p.
 artikel
66 Thermodynamics and kinetics for nucleation of diamond in the chemical vapor deposition process Hwang, Nong M.
 1992
 1 2-4 p. 191-194
4 p.
 artikel
67 Vapor growth of diamond with silane Miyata, Koichi
 1992
 1 2-4 p. 392-396
5 p.
 artikel
68 X.P.S. analysis of the Si substrate surface pretreatment for diamond film deposition Ascarelli, P.
 1992
 1 2-4 p. 211-215
5 p.
 artikel
69 X-ray emission spectroscopy studies of structural properties of diamond-like carbon films Strel'nitskij, V.E.
 1992
 1 2-4 p. 341-344
4 p.
 artikel
                             69 gevonden resultaten
 
 Koninklijke Bibliotheek - Nationale Bibliotheek van Nederland