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                             69 results found
no title author magazine year volume issue page(s) type
1 Acknowledgment 1992
 1 2-4 p. xvii-
1 p.
 article
2 A new method for the generation of diamond nuclei by plasma CVD Yugo, S.
 1992
 1 2-4 p. 388-391
4 p.
 article
3 Annihilation of nucleation sites during diamond CVD Jeoung Woo Kim,
 1992
 1 2-4 p. 200-204
5 p.
 article
4 A study on synthesis of diamond by capacitively coupled RF plasma-assisted chemical vapor deposition Lee, S.R.
 1992
 1 2-4 p. 235-238
4 p.
 article
5 Atomic configuration at the β-SiCc(2 × 2) reconstructed surface Badziag, P.
 1992
 1 2-4 p. 285-289
5 p.
 article
6 Author index 1992
 1 2-4 p. xix-xxx
nvt p.
 article
7 Characterisation of the AgC:H deposition process Harnack, J.T.
 1992
 1 2-4 p. 301-306
6 p.
 article
8 Characterization of a CH4-RF-plasma by ion flux, Langmuir probe, and optical emission spectroscopy measurements Weiler, M.
 1992
 1 2-4 p. 121-126
6 p.
 article
9 Characterization of diamond-like carbon films by fine scale indentation measurements Smith, J.
 1992
 1 2-4 p. 355-359
5 p.
 article
10 Combustion flame grown diamond films Golozar, M.A.
 1992
 1 2-4 p. 262-266
5 p.
 article
11 Complications of halogen-assisted chemical vapor deposition of diamond Wong, M.S.
 1992
 1 2-4 p. 369-372
4 p.
 article
12 Conference calendar 1992
 1 2-4 p. xxvii-
1 p.
 article
13 Correlation between ion-flux and microstructure of a-C:H films Ehrhardt, H.
 1992
 1 2-4 p. 316-320
5 p.
 article
14 Cumulative author index 1992
 1 2-4 p. xxix-xxxx
nvt p.
 article
15 Cumulative subject index 1992
 1 2-4 p. xxx-
1 p.
 article
16 Defined etching of carbon-diamond films on silicon using an oxygen plasma with titanium masking Chan, K.K.
 1992
 1 2-4 p. 281-284
4 p.
 article
17 Deposition of non-graphitic carbon films by low carbon particle energies Ullmann, J.
 1992
 1 2-4 p. 321-327
7 p.
 article
18 Determination ofsp3/sp2 ratio in diamond-like films of a-C:H Demichelis, F.
 1992
 1 2-4 p. 298-300
3 p.
 article
19 Diamond crystallites nucleation on sintered tungsten: temperature and thermal treatment effects Polini, R.
 1992
 1 2-4 p. 205-210
6 p.
 article
20 Diamond film preparation by arc-discharge plasma-jet-CVD and thermodynamic calculation of the equilibrium gas composition Boudina, A.
 1992
 1 2-4 p. 380-387
8 p.
 article
21 Diamond film synthesis on Mo in thermal RF plasma Hernberg, R.
 1992
 1 2-4 p. 255-261
7 p.
 article
22 Diamond-like films deposition by magnetron sputtering with additional ionization Chuzhko, R.K.
 1992
 1 2-4 p. 332-333
2 p.
 article
23 Diffusion of implanted nickel in diamond Filipp, A.R.
 1992
 1 2-4 p. 271-276
6 p.
 article
24 DLC film preparation by LASER-ARC and properties study Scheibe, H.-J.
 1992
 1 2-4 p. 98-103
6 p.
 article
25 Doping of amorphous-hydrogenated carbon films by ion implantation Amir, O.
 1992
 1 2-4 p. 364-368
5 p.
 article
26 E-BN crystallization under thermodynamic instability (p,T) conditions Sokołowska, A.
 1992
 1 2-4 p. 334-336
3 p.
 article
27 Effects of UV irradiation on the growth of diamond at lower temperatures Kamo, M.
 1992
 1 2-4 p. 104-108
5 p.
 article
28 Electron beam assisted deposition of sharp needles from a decomposed gas mixture of methane and hydrogen Abe, Atsuyoshi
 1992
 1 2-4 p. 267-270
4 p.
 article
29 Epitaxial growth of diamond thin films on foreign substrates Inuzuka, Tadao
 1992
 1 2-4 p. 175-179
5 p.
 article
30 Epitaxial growth of unintentionally p-type doped β-SiC single crystal layers Weber, Thomas
 1992
 1 2-4 p. 147-150
4 p.
 article
31 Epitaxial thin film growth, characterization and device development in monocrystalline α- and β-silicon carbide Davis, Robert F.
 1992
 1 2-4 p. 109-120
12 p.
 article
32 Etching of polycrystalline diamond and amorphous carbon films by RIE Dorsch, O.
 1992
 1 2-4 p. 277-280
4 p.
 article
33 Growth mechanisms of diamond crystals and films prepared by chemical vapor deposition Bonnot, A.M.
 1992
 1 2-4 p. 230-234
5 p.
 article
34 Growth of cubic boron nitride from vapor phase Saitoh, Hidetoshi
 1992
 1 2-4 p. 137-146
10 p.
 article
35 High-temperature epitaxy of diamond in a turbulent flame Snail, K.A.
 1992
 1 2-4 p. 180-186
7 p.
 article
36 Hydrogen distribution and heterogeneity of chemical bonds in surface and internal layers of a-C:H films Ralchenko, V.G.
 1992
 1 2-4 p. 345-349
5 p.
 article
37 Identification of structural defects in diamond-like films based on the comparison of X-rayCK α emission spectra with simple band structure calculations Kurmaev, E.Z.
 1992
 1 2-4 p. 337-340
4 p.
 article
38 Inelastic neutron scattering of amorphous hydrogenated carbon Honeybone, P.J.R.
 1992
 1 2-4 p. 293-297
5 p.
 article
39 Influence of gas phase parameters on the deposition kinetics and morphology of thin diamond films deposited by HFCVD and MWCVD technique Beckmann, R.
 1992
 1 2-4 p. 164-167
4 p.
 article
40 In-situ investigation of low-pressure diamond growth by elastic scattering of light and reflectance spectroscopy Bonnot, A.M.
 1992
 1 2-4 p. 161-163
3 p.
 article
41 Interface structures for epitaxy of diamond on Si(100) Verwoerd, W.S.
 1992
 1 2-4 p. 195-199
5 p.
 article
42 Ion beam assisted growth of dense diamond-like carbon Andre´, B.
 1992
 1 2-4 p. 307-311
5 p.
 article
43 Low-temperature deposition of diamond in a temperature range from 70 °C to 700 °C Ihara, M.
 1992
 1 2-4 p. 187-190
4 p.
 article
44 Low temperature diamond film fabrication using magneto-active plasma CVD Yuasa, M.
 1992
 1 2-4 p. 168-174
7 p.
 article
45 Material properties of CVD diamond produced by the DC arc-jet Lu, G.
 1992
 1 2-4 p. 134-136
3 p.
 article
46 Mechanism of substrate heating in diamond-forming low-pressure microwave discharges Ohl, A.
 1992
 1 2-4 p. 243-247
5 p.
 article
47 Monte-Carlo studies of energy characteristics of carbon plasma fluxes at deposition of diamond-like films Lyubimov, V.V.
 1992
 1 2-4 p. 290-292
3 p.
 article
48 New developments in the growth of epitaxial cubic boron nitride and diamond films on silicon Clarke, R.
 1992
 1 2-4 p. 93-97
5 p.
 article
49 NMR characterisation of Si-based ultrafine laser formed powders Tougne, P.
 1992
 1 2-4 p. 360-363
4 p.
 article
50 Nucleation and growth of diamond particles from the vapor phase Kostadinov, Ljubomir
 1992
 1 2-4 p. 157-160
4 p.
 article
51 Polycrystalline diamond field-effect transistors Tessmer, A.J.
 1992
 1 2-4 p. 89-92
4 p.
 article
52 Preface to the proceedings of the 2nd European conference on diamond, diamond-like and related coatings, Nice, France, September 2–6, 1991 Bachmann, Peter K.
 1992
 1 2-4 p. xv-
1 p.
 article
53 Radio-frequency hot-filament CVD of diamond Mitura, Stanislaw
 1992
 1 2-4 p. 239-242
4 p.
 article
54 Rapid synthesis of diamond by counter-flow liquid injection into an atmospheric pressure plasma jet Pfender, E.
 1992
 1 2-4 p. 127-133
7 p.
 article
55 RF-deposited a-C:H films from hydrogen-rich methane mixtures: relationships among plasma characteristics, deposition rates, and material properties Barbarossa, V.
 1992
 1 2-4 p. 328-331
4 p.
 article
56 Selected area diamond deposition by control of the nucleation sites Higuchi, K.
 1992
 1 2-4 p. 220-229
10 p.
 article
57 Some physical properties of diamond films grown by d.c.-glow discharge-enhanced hot-filament assisted chemical vapour deposition Fabisiak, K.
 1992
 1 2-4 p. 83-88
6 p.
 article
58 Subject index 1992
 1 2-4 p. xxi-xxvi
nvt p.
 article
59 Submicron characterization of B-C:H thin films produced by RF plasma CVD Garci´a, A.
 1992
 1 2-4 p. 350-354
5 p.
 article
60 Substrate temperature influence of c-BN thin film formation by IBED Tanabe, N.
 1992
 1 2-4 p. 151-156
6 p.
 article
61 TEM observations of diamond films prepared by microwave plasma CVD Eto, H.
 1992
 1 2-4 p. 373-379
7 p.
 article
62 The effect of deposition conditions on carbon films prepared by laser ablation Gorbunov, A.A.
 1992
 1 2-4 p. 312-315
4 p.
 article
63 The effect of silicon surface preparation on the nucleation of diamond by chemical vapor deposition Avigal, Y.
 1992
 1 2-4 p. 216-219
4 p.
 article
64 The influence of methane concentration, substrate temperature, and pressure on the morphology of diamond films grown by dc plasma jet CVD Boudina, A.
 1992
 1 2-4 p. 248-254
7 p.
 article
65 The Raman spectroscopy of diamond films deposited on metal and insulator substrates with varying thermal expansion coefficient Fabisiak, K.
 1992
 1 2-4 p. 77-82
6 p.
 article
66 Thermodynamics and kinetics for nucleation of diamond in the chemical vapor deposition process Hwang, Nong M.
 1992
 1 2-4 p. 191-194
4 p.
 article
67 Vapor growth of diamond with silane Miyata, Koichi
 1992
 1 2-4 p. 392-396
5 p.
 article
68 X.P.S. analysis of the Si substrate surface pretreatment for diamond film deposition Ascarelli, P.
 1992
 1 2-4 p. 211-215
5 p.
 article
69 X-ray emission spectroscopy studies of structural properties of diamond-like carbon films Strel'nitskij, V.E.
 1992
 1 2-4 p. 341-344
4 p.
 article
                             69 results found
 
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