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                             90 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Absolute determination of the Fermi level pinning at the dielectric/semiconductor interface in GaAs based heterostructures Callen, Olivier
 2001
 80 1-3 p. 142-146
5 p.
 artikel
2 Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC Weingärtner, R.
 2001
 80 1-3 p. 357-361
5 p.
 artikel
3 Accuracy and reproducibility of the electrochemical profiler Mayes, Ian
 2001
 80 1-3 p. 160-163
4 p.
 artikel
4 A model for diffusion of beryllium in InGaAs/InP heterostructures Ihaddadene, M.
 2001
 80 1-3 p. 73-76
4 p.
 artikel
5 Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p+GaAs base layers Moriarty, G.R.
 2001
 80 1-3 p. 284-288
5 p.
 artikel
6 Application of magnetophonon resonance to control the thermal stress in multiple quantum wells Tomaka, G.
 2001
 80 1-3 p. 173-177
5 p.
 artikel
7 Assessment of electrical and optical properties of heavily Fe-implanted semi-insulating InP Gasparotto, A.
 2001
 80 1-3 p. 202-205
4 p.
 artikel
8 A TEM and SEM-cathodoluminescence study of oval defects in graded InGaAs/GaAs buffer layers Lazzarini, Laura
 2001
 80 1-3 p. 120-124
5 p.
 artikel
9 Author Index of Volume 80 2001
 80 1-3 p. 392-394
3 p.
 artikel
10 Contactless electromodulation and surface photovoltage spectroscopy for the nondestructive, room temperature characterization of wafer-scale III–V semiconductor device structures Pollak, Fred H.
 2001
 80 1-3 p. 178-183
6 p.
 artikel
11 Control of Al-implantation doping in 4H–SiC Pernot, J
 2001
 80 1-3 p. 362-365
4 p.
 artikel
12 Correlation between hot-electron-stress-induced degradation and cathodoluminescence in InP-based HEMTs Salviati, G.
 2001
 80 1-3 p. 289-293
5 p.
 artikel
13 Defects in SiGe virtual substrates for high mobility electron gas Di Gaspare, L.
 2001
 80 1-3 p. 36-40
5 p.
 artikel
14 Demonstration of a DFB laser with an integrated electro-absorption modulator produced using a novel quantum-well intermixing technique Letal, G.J.
 2001
 80 1-3 p. 232-235
4 p.
 artikel
15 Deposition, evaluation and control of 4H and 6H SiC epitaxial layers for device applications Neyret, E.
 2001
 80 1-3 p. 332-336
5 p.
 artikel
16 Detection and localization of degradation damaged regions in 1.3 μm laser diodes on InP using low-coherence reflectometry Gottesman, Y.
 2001
 80 1-3 p. 236-240
5 p.
 artikel
17 Development of a novel tool for semiconductor process control Gwilliam, R.M.
 2001
 80 1-3 p. 60-64
5 p.
 artikel
18 Development of a vertical gradient freeze process for low EPD GaAs substrates Bünger, Th.
 2001
 80 1-3 p. 5-9
5 p.
 artikel
19 Effect of graded buffer design on the defect structure in InGaAs/GaAs (111)B heterostructures Gutiérrez, M.
 2001
 80 1-3 p. 27-31
5 p.
 artikel
20 Electrical and photoelectrical behaviour of CdTe structures Horváth, Zs.J.
 2001
 80 1-3 p. 156-159
4 p.
 artikel
21 Electrical characterization and carrier transport mechanisms of GaAs p/i/n devices for photovoltaic applications Konofaos, N.
 2001
 80 1-3 p. 152-155
4 p.
 artikel
22 Electron induced dissociation of hydrogen or deuterium–silicon complexes in GaAs; application to the reliability of GaAs based electronic or optoelectronic devices Silvestre, S.
 2001
 80 1-3 p. 270-273
4 p.
 artikel
23 Engineered Schottky barriers on n-In0.35Ga0.65As Horváth, Zs.J.
 2001
 80 1-3 p. 248-251
4 p.
 artikel
24 Evaluation of InP-to-silicon heterobonding Pasquariello, Donato
 2001
 80 1-3 p. 134-137
4 p.
 artikel
25 Evaluation of n-type doping of 4H-SiC and n-/p-type doping of 6H-SiC using absorption measurements Wellmann, P.J.
 2001
 80 1-3 p. 352-356
5 p.
 artikel
26 Evaluation of performance capabilities of emitters and detectors based on a common MQW structure Cengher, D.
 2001
 80 1-3 p. 241-244
4 p.
 artikel
27 Evaluation of reactive ion etching processes for fabrication of integrated GaAs/AlGaAs optoelectronic devices Aperathitis, E.
 2001
 80 1-3 p. 77-80
4 p.
 artikel
28 Ferroelectrics: new wide-gap materials for UV detection Pintilie, L.
 2001
 80 1-3 p. 388-391
4 p.
 artikel
29 GaAs planar doped barrier diodes Szentpáli, B.
 2001
 80 1-3 p. 257-261
5 p.
 artikel
30 GaAs wafer mapping by microwave-detected photoconductivity Niklas, J.R.
 2001
 80 1-3 p. 206-209
4 p.
 artikel
31 High resolution X-ray diffraction using a high brilliance source, with rapid data analysis by auto-fitting Taylor, Mark
 2001
 80 1-3 p. 95-98
4 p.
 artikel
32 Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability Cassette, S.
 2001
 80 1-3 p. 279-283
5 p.
 artikel
33 Ideal 4H-SiC pn junction and its characteristic shunt Strel'chuk, A.M.
 2001
 80 1-3 p. 378-382
5 p.
 artikel
34 Improved Al/Si ohmic contacts to p-type 4H-SiC Kakanakov, Roumen
 2001
 80 1-3 p. 374-377
4 p.
 artikel
35 Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties Cirlin, G.E.
 2001
 80 1-3 p. 108-111
4 p.
 artikel
36 Inductively coupled plasma — plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs) Medjdoub, M.
 2001
 80 1-3 p. 252-256
5 p.
 artikel
37 Influence of compositional macrosteps on the reduction of the critical thickness by generation of 〈010〉 misfit dislocations in InGaAs/GaAs quantum wells Frigeri, C.
 2001
 80 1-3 p. 116-119
4 p.
 artikel
38 Influence of LPE growth conditions on the electroluminescence properties of InP/InGaAs(P) infrared emitting diodes Rakovics, Vilmos
 2001
 80 1-3 p. 18-22
5 p.
 artikel
39 Influence of Sb3+ ions on photoconductive properties of chemically deposited PbS films Pentia, E.
 2001
 80 1-3 p. 23-26
4 p.
 artikel
40 Influence of the As/Ga flux ratio on diffusion of Be in MBE GaAs layers Mosca, R.
 2001
 80 1-3 p. 32-35
4 p.
 artikel
41 In situ reflectance monitoring in MOVPE of a multiwafer reactor Weeks, K.J.
 2001
 80 1-3 p. 46-49
4 p.
 artikel
42 Integrated analytical equipment for control of film growth in MBE technology Mikhailov, N.N.
 2001
 80 1-3 p. 41-45
5 p.
 artikel
43 Investigation of MBE grown GaAs/AlGaAs/InGaAs heterostructures Melkadze, R
 2001
 80 1-3 p. 262-265
4 p.
 artikel
44 Kinetics of native oxide film growth on epiready GaAs Tanner, B.K.
 2001
 80 1-3 p. 99-103
5 p.
 artikel
45 Local absorption spectra of single and coupled semiconductor quantum dots Simserides, C.D.
 2001
 80 1-3 p. 266-269
4 p.
 artikel
46 LPE InP layers grown in the presence of rare-earth elements Procházková, O.
 2001
 80 1-3 p. 14-17
4 p.
 artikel
47 Luminescence and lasing in GaN epitaxial layers and InGaN/GaN quantum well heterostructures under optical and electron-beam excitation Yablonskii, G.P.
 2001
 80 1-3 p. 322-326
5 p.
 artikel
48 Makyoh topography for the morphological study of compound semiconductor wafers and structures Riesz, Ferenc
 2001
 80 1-3 p. 220-223
4 p.
 artikel
49 Material quality improvements for high voltage 4H-SiC diodes Kalinina, E.
 2001
 80 1-3 p. 337-341
5 p.
 artikel
50 Metrology of semiconductor device structures by cross-sectional AFM Jenkins, C.
 2001
 80 1-3 p. 138-141
4 p.
 artikel
51 MicroRaman study of bulk inclusions in SiC crystals Martı́n, E.
 2001
 80 1-3 p. 366-369
4 p.
 artikel
52 Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon: the case of BF2 + implantation Dusch, A.
 2001
 80 1-3 p. 65-67
3 p.
 artikel
53 MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL Möck, P.
 2001
 80 1-3 p. 112-115
4 p.
 artikel
54 Optical characterization of CdZnTe/ZnTe heterostructures modified by electron or X-ray irradiation Venger, Ye.F.
 2001
 80 1-3 p. 193-196
4 p.
 artikel
55 Optimization of III–V compound semiconductor heterostructures for distributed Bragg reflector applications in VCSELs Linnik, M.
 2001
 80 1-3 p. 245-247
3 p.
 artikel
56 Organisers and Sponsors 2001
 80 1-3 p. 3-4
2 p.
 artikel
57 Packaging-induced stress distribution in high power AlGaAs laser diodes by photoluminescence mapping Martin, Pilar
 2001
 80 1-3 p. 188-192
5 p.
 artikel
58 Phase formation at rapid thermal annealing of Al/Ti/Ni ohmic contacts on 4H-SiC Vassilevski, K.
 2001
 80 1-3 p. 370-373
4 p.
 artikel
59 Photoluminescence characterization of InGaP/GaAs/InGaP quantum wires Kicin, S.
 2001
 80 1-3 p. 184-187
4 p.
 artikel
60 Precipitate engineering in GaAs studied by laser scattering tomography Steinegger, T.
 2001
 80 1-3 p. 215-219
5 p.
 artikel
61 Preface Panayotatos, P
 2001
 80 1-3 p. 1-2
2 p.
 artikel
62 Progress in the industrial production of SiC substrates for semiconductor devices Müller, St.G
 2001
 80 1-3 p. 327-331
5 p.
 artikel
63 Proton-induced damage in p +–n InP solar cells: the role of electron capture at high fluences Romero, M.J.
 2001
 80 1-3 p. 294-298
5 p.
 artikel
64 P-type InP grown by liquid phase epitaxy with rare earths: not intentional Ge acceptor doping Zdánský, K.
 2001
 80 1-3 p. 10-13
4 p.
 artikel
65 Quantitative approaches in laser scattering tomography Donecker, J.
 2001
 80 1-3 p. 210-214
5 p.
 artikel
66 Raman scattering as a probing method of subsurface damage in SiC Vicente, P.
 2001
 80 1-3 p. 348-351
4 p.
 artikel
67 Recent advances in ZnO materials and devices Look, D.C.
 2001
 80 1-3 p. 383-387
5 p.
 artikel
68 Reliability investigation of implanted microwave InGaP/GaAs HBTs Rezazadeh, A.A.
 2001
 80 1-3 p. 274-278
5 p.
 artikel
69 Scanning electron microscopy study of twins in ZnSe single crystals grown by solid-phase recrystallization Urbieta, A.
 2001
 80 1-3 p. 130-133
4 p.
 artikel
70 Selective doping of conformal GaAs layers grown by hydride vapour phase epitaxy on Si substrates studied by spatially resolved optical techniques Martinez, O.
 2001
 80 1-3 p. 197-201
5 p.
 artikel
71 Selective etching during the electrochemical C-V profiling of PM-HEMTs Kayambaki, M.
 2001
 80 1-3 p. 164-167
4 p.
 artikel
72 SiC thin films obtained by Si carbonization Molina, S.I.
 2001
 80 1-3 p. 342-344
3 p.
 artikel
73 Spectroscopic evidence and control of compensating native defects in doped ZnSe Irmscher, Klaus
 2001
 80 1-3 p. 168-172
5 p.
 artikel
74 Strain and temperature distribution in broad-area high-power laser diodes under operation determined by high resolution X-ray diffraction and topography Zeimer, U.
 2001
 80 1-3 p. 87-90
4 p.
 artikel
75 Structural characterization of high temperature AlN intermediate layer in GaN grown by molecular beam epitaxy Sanchez, A.M.
 2001
 80 1-3 p. 299-303
5 p.
 artikel
76 Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy Weyher, J.L.
 2001
 80 1-3 p. 318-321
4 p.
 artikel
77 Study of structural defects limiting the luminescence of InGaN single quantum wells Cremades, Ana
 2001
 80 1-3 p. 313-317
5 p.
 artikel
78 Study of the correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy Amimer, K.
 2001
 80 1-3 p. 304-308
5 p.
 artikel
79 Study of the effect of non-planarity and defects on the geometrical accuracy of semiconductor surface structures using a CA_TCAD system Sirakoulis, G.Ch.
 2001
 80 1-3 p. 68-72
5 p.
 artikel
80 Study of Zn diffusion in n-type GaSb by cathodoluminescence and scanning tunneling spectroscopy Hidalgo, P.
 2001
 80 1-3 p. 125-129
5 p.
 artikel
81 Subject Index of Volume 80 2001
 80 1-3 p. 395-402
8 p.
 artikel
82 Surface characterization of GaN and AlGaN layers grown by MOVPE Hashizume, T.
 2001
 80 1-3 p. 309-312
4 p.
 artikel
83 Surface roughness studies on 4H-SiC layers grown by liquid phase epitaxy Kuznetsov, N.
 2001
 80 1-3 p. 345-347
3 p.
 artikel
84 TEM investigation of self-organized PbSe quantum dots as a function of spacer layer thickness and growth temperature Kang, H.H.
 2001
 80 1-3 p. 104-107
4 p.
 artikel
85 Thermal decomposition of InP surfaces: volatile component loss, morphological changes, and pattern formation Riesz, Ferenc
 2001
 80 1-3 p. 54-59
6 p.
 artikel
86 Thermal processing induced plastic deformation in GaAs wafers Möck, P.
 2001
 80 1-3 p. 91-94
4 p.
 artikel
87 The status and future development of innovative optoelectronic devices based on III-nitrides on SiC and on III-antimonides Stath, N.
 2001
 80 1-3 p. 224-231
8 p.
 artikel
88 Ultra high vacuum-based in situ characterization of compound semiconductor surfaces by a contactless capacitance–voltage technique Hasegawa, Hideki
 2001
 80 1-3 p. 147-151
5 p.
 artikel
89 Uniformity control of 3 inch GaN/InGaN layers grown in Planetary Reactors® Beccard, R.
 2001
 80 1-3 p. 50-53
4 p.
 artikel
90 X-ray investigations of III–V compounds: layers, nanostructures, surfaces Jenichen, B.
 2001
 80 1-3 p. 81-86
6 p.
 artikel
                             90 gevonden resultaten
 
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