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                             66 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A parametric study of AlN thin films grown by pulsed laser deposition Verardi, P
 1997
 50 1-3 p. 223-227
5 p.
 artikel
2 Caracterization of AIN buffer layers on (0001)-sapphire substrates 1 This work was partially supported by the Direction Générale de l'Armement, Direction de la Recherche et des Etudes Techniques (DRET). 1 Le Vaillant, Y.M.
 1997
 50 1-3 p. 32-37
6 p.
 artikel
3 Cathodoluminescence study of crystalline quality of (Al, In, Ga)N heterostructures Liu, Q
 1997
 50 1-3 p. 245-250
6 p.
 artikel
4 Characterisation of dislocations, nanopipes and inversion domains in GaN by transmission electron microscopy Cherns, D
 1997
 50 1-3 p. 76-81
6 p.
 artikel
5 Characterization of Ca and C implanted GaN Mensching, B
 1997
 50 1-3 p. 105-108
4 p.
 artikel
6 Characterization of GaN epitaxial layers on SiC substrates with Al x Ga1−x N buffer layers Lin, C.F
 1997
 50 1-3 p. 25-28
4 p.
 artikel
7 Comparative study of hexagonal and cubic GaN growth by RF-MBE Feuillet, G
 1997
 50 1-3 p. 233-237
5 p.
 artikel
8 Comparison of luminescence and physical morphologies of GaN epilayers Trager-Cowan, C
 1997
 50 1-3 p. 161-164
4 p.
 artikel
9 Comparison of wurtzite and zinc blende III–V nitrides field effect transistors: a 2D Monte Carlo device simulation Dessenne, F
 1997
 50 1-3 p. 315-318
4 p.
 artikel
10 2D/3D growth of GaN by molecular beam epitaxy: towards GaN quantum dots Daudin, B
 1997
 50 1-3 p. 8-11
4 p.
 artikel
11 Determination of Zeeman splittings of excitonic transitions in wurtzite GaN by mean of magnetocircular dichroism technique Julier, M
 1997
 50 1-3 p. 126-129
4 p.
 artikel
12 Diffusion length of photoexcited carriers in GaN Duboz, J.Y
 1997
 50 1-3 p. 289-295
7 p.
 artikel
13 DRIFTS characterization of a nanostructured gallium nitride powder and its interactions with organic molecules Baraton, Marie-Isabelle
 1997
 50 1-3 p. 42-45
4 p.
 artikel
14 Effects of inductively coupled plasma conditions on the etch properties of GaN and ohmic contact formations Kim, Hyeon-Soo
 1997
 50 1-3 p. 82-87
6 p.
 artikel
15 Efficient and uniform production of III-nitride films by multiwafer MOVPE Deschler, M
 1997
 50 1-3 p. 1-7
7 p.
 artikel
16 Electrical and optical properties of p-SiC/n-GaN heterostructures Topf, M
 1997
 50 1-3 p. 302-306
5 p.
 artikel
17 Electrical transport properties of III-nitrides Look, D.C
 1997
 50 1-3 p. 50-56
7 p.
 artikel
18 EXAFS studies of plasma-enhanced MBE grown Group III-Nitrides Blant, A.V
 1997
 50 1-3 p. 38-41
4 p.
 artikel
19 Exciton photo-luminescence of GaN bulk crystals grown by the AMMONO method Dwiliński, R
 1997
 50 1-3 p. 46-49
4 p.
 artikel
20 Fabrication and characterisation of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE Flannery, L.B
 1997
 50 1-3 p. 307-310
4 p.
 artikel
21 Gain spectra in cw InGaN/GaN MQW laser diodes Deguchi, T
 1997
 50 1-3 p. 251-255
5 p.
 artikel
22 GaN and AlGaN metal–semiconductor–metal photodetectors Ferguson, I
 1997
 50 1-3 p. 311-314
4 p.
 artikel
23 GaN thin films deposited by pulsed laser ablation in nitrogen and ammonia reactive atmospheres Cole, D
 1997
 50 1-3 p. 20-24
5 p.
 artikel
24 Growth of columnar aluminum nitride layers on Si(111) by molecular beam epitaxy Karmann, S
 1997
 50 1-3 p. 228-232
5 p.
 artikel
25 Growth of GaN and AlN thin films by laser induced molecular beam epitaxy Gross, M
 1997
 50 1-3 p. 16-19
4 p.
 artikel
26 III–V–N compounds for infrared applications Salzman, J
 1997
 50 1-3 p. 148-152
5 p.
 artikel
27 III–V nitrides: wurtzite symmetry and optical absorption Bigenwald, P.
 1997
 50 1-3 p. 208-211
4 p.
 artikel
28 Index 1997
 50 1-3 p. 323-324
2 p.
 artikel
29 Index 1997
 50 1-3 p. 325-329
5 p.
 artikel
30 Influence of Si doping level on the Raman and IR reflectivity spectra and optical absorption spectrum of GaN Bentoumi, G
 1997
 50 1-3 p. 142-147
6 p.
 artikel
31 In incorporation efficiency and composition fluctuations in MOVPE grown GaInN/GaN hetero structures and quantum wells Scholz, F
 1997
 50 1-3 p. 238-244
7 p.
 artikel
32 Initial stages of growth of GaN over (0001) Al2O3 substrate using MBE: a crystallographic analysis of the defects Potin, V
 1997
 50 1-3 p. 29-31
3 p.
 artikel
33 Investigations of selectively grown GaN/InGaN epitaxial layers Gfrörer, O
 1997
 50 1-3 p. 268-271
4 p.
 artikel
34 Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire Leroux, M
 1997
 50 1-3 p. 97-104
8 p.
 artikel
35 Microscopic gain theory for group III nitride semiconductor quantum wells Girndt, A.
 1997
 50 1-3 p. 174-179
6 p.
 artikel
36 MOVPE growth and characterization of Al x Ga1-x N Ruffenach-Clur, S
 1997
 50 1-3 p. 219-222
4 p.
 artikel
37 Nanosecond pump-and-probe study of wurtzite GaN Deguchi, T
 1997
 50 1-3 p. 180-182
3 p.
 artikel
38 On the role of thermal strain for micro-Raman determination of carrier concentrations in MOVPE-n-GaN Wieser, N
 1997
 50 1-3 p. 88-92
5 p.
 artikel
39 Optical and magneto-optical characterization of heteroepitaxial gallium nitride Skromme, B.J
 1997
 50 1-3 p. 117-125
9 p.
 artikel
40 Optical characterization of MBE-grown GaNAs Pozina, G
 1997
 50 1-3 p. 153-156
4 p.
 artikel
41 Optical nonlinearities of gallium nitride Haag, H
 1997
 50 1-3 p. 197-200
4 p.
 artikel
42 Optical properties of GaN epilayers grown on Si (111) and Si (001) substrates Godlewski, M
 1997
 50 1-3 p. 113-116
4 p.
 artikel
43 Optical pumping in nitride cavities with etched mirror facets Binet, F
 1997
 50 1-3 p. 183-187
5 p.
 artikel
44 Origin of the Q=11 meV bound exciton in GaN Kaufmann, U
 1997
 50 1-3 p. 109-112
4 p.
 artikel
45 Photoluminescence of exciton-polaritons in GaN Buyanova, I.A
 1997
 50 1-3 p. 130-133
4 p.
 artikel
46 Photoluminescence properties of nanocrystalline AlN layers grown by pulse plasma assisted CVD Olszyna, A
 1997
 50 1-3 p. 170-173
4 p.
 artikel
47 Photostimulated emission of GaN layers and devices O'Donnell, K.P
 1997
 50 1-3 p. 264-267
4 p.
 artikel
48 Plasma assisted molecular beam epitaxy growth of GaN Einfeldt, S
 1997
 50 1-3 p. 12-15
4 p.
 artikel
49 Properties and applications of MBE grown AlGaN Stutzmann, M
 1997
 50 1-3 p. 212-218
7 p.
 artikel
50 Quantum beat spectroscopy on excitons in GaN Zimmermann, R
 1997
 50 1-3 p. 205-207
3 p.
 artikel
51 Radiation spectra in GaN-based LEDs under thermal-injection processes 1 L-X/P4, European Materials Research Society, Spring Meeting, E-MRS'97 1 Svechnikov, S.V
 1997
 50 1-3 p. 319-321
3 p.
 artikel
52 Recombination dynamics of localized excitons in self-formed InGaN quantum dots Kawakami, Yoichi
 1997
 50 1-3 p. 256-263
8 p.
 artikel
53 Role of the V/III precursor ratio on exciton dynamics in GaN MOCVD epilayers Lefebvre, P
 1997
 50 1-3 p. 201-204
4 p.
 artikel
54 RT-CW Operation of InGaN multi-quantum-well structure laser diodes Nakamura, Shuji
 1997
 50 1-3 p. 277-284
8 p.
 artikel
55 Spatially resolved investigations of the excitonic luminescence in GaN Hoffmann, A
 1997
 50 1-3 p. 192-196
5 p.
 artikel
56 Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films Edwards, N.V
 1997
 50 1-3 p. 134-141
8 p.
 artikel
57 Strong morphological dependence of luminescence efficiency and emission wavelength in hexagonal GaN crystallites directly imaged by scanning cathodoluminescence microscopy Bertram, F
 1997
 50 1-3 p. 165-169
5 p.
 artikel
58 Synthesis of AlN by reactive sputtering Randriamora, F
 1997
 50 1-3 p. 272-276
5 p.
 artikel
59 The evolution of a-GaAs1−xNx/c-GaAs interface states as a function of Ar-NH3 plasma Aguir, Khalifa
 1997
 50 1-3 p. 157-160
4 p.
 artikel
60 The optical linewidth of InGaN light emitting diodes Middleton, P.G
 1997
 50 1-3 p. 285-288
4 p.
 artikel
61 The structure of GaN layers grown on SiC and sapphire by molecular beam epitaxy Ruterana, P
 1997
 50 1-3 p. 72-75
4 p.
 artikel
62 Transmission electron microscopy characterisation of metalorganic chemical vapour deposition grown GaN layers Pécz, B
 1997
 50 1-3 p. 93-96
4 p.
 artikel
63 Transmission electron microscopy structural characterisation of GaN layers grown on (0001) sapphire Rouviere, J.L.
 1997
 50 1-3 p. 61-71
11 p.
 artikel
64 Two-photon spectroscopy in GaN Steube, M
 1997
 50 1-3 p. 188-191
4 p.
 artikel
65 Violet GaN based light emitting diodes fabricated by metal organics vapour phase epitaxy Beaumont, B
 1997
 50 1-3 p. 296-301
6 p.
 artikel
66 Zinc-blende GaN: ab initio calculations Alves, J.L.A
 1997
 50 1-3 p. 57-60
4 p.
 artikel
                             66 gevonden resultaten
 
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