| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Acoustic phonons in a-Si:H/a-SiN x :H superlattices
|
Hotz, Roswitha
|
|
1990
|
5 |
2 |
p. 167-171
5 p.
|
artikel
|
| 2 |
An ellipsometric and RBS study of TiSi2 formation
|
de Nijs, J.M.M.
|
|
1990
|
5 |
2 |
p. 319-323
5 p.
|
artikel
|
| 3 |
A new microscope for semiconductor luminescence studies
|
Aplin, P.S.
|
|
1990
|
5 |
2 |
p. 329-331
3 p.
|
artikel
|
| 4 |
A study of strained InGaAs single quantum wells using photoreflectance
|
Evans, J.H.
|
|
1990
|
5 |
2 |
p. 211-215
5 p.
|
artikel
|
| 5 |
Ballistic phonon signal for imaging crystal properties
|
Huebener, R.P.
|
|
1990
|
5 |
2 |
p. 157-165
9 p.
|
artikel
|
| 6 |
Bonding analysis of layered materials by photothermal radiometry
|
Heuret, M.
|
|
1990
|
5 |
2 |
p. 119-125
7 p.
|
artikel
|
| 7 |
Characterisation of rough silicon surfaces using spectroscopic ellipsometry, reflectance, scanning electron microscopy and scattering measurements
|
Pickering, C.
|
|
1990
|
5 |
2 |
p. 295-299
5 p.
|
artikel
|
| 8 |
Characterization of GaAs buffer layers 0.1 μm thick grown on Si(100)
|
Sobiesierski, Z.
|
|
1990
|
5 |
2 |
p. 275-278
4 p.
|
artikel
|
| 9 |
Characterization of materials by micro-Raman spectroscopy
|
Huong, P.V.
|
|
1990
|
5 |
2 |
p. 255-260
6 p.
|
artikel
|
| 10 |
Control of buried junctions by light-beam-induced current mapping
|
Boyeaux, J.P.
|
|
1990
|
5 |
2 |
p. 325-328
4 p.
|
artikel
|
| 11 |
Crystallization kinetics of thin amorphous InSb films
|
Scholte, P.M.L.O.
|
|
1990
|
5 |
2 |
p. 233-237
5 p.
|
artikel
|
| 12 |
Determination of the elastic constants of a polymeric Langmuir-Blodgett film by Brillouin spectroscopy
|
Nizzoli, F
|
|
1990
|
5 |
2 |
p. 173-176
4 p.
|
artikel
|
| 13 |
Ellipsometric characterization of multilayer transistor structures
|
Woollam, John A.
|
|
1990
|
5 |
2 |
p. 291-294
4 p.
|
artikel
|
| 14 |
Ellipsometric characterization of thin films and superlattices
|
Bremer, J.
|
|
1990
|
5 |
2 |
p. 285-289
5 p.
|
artikel
|
| 15 |
Evanescent field IR spectroscopy using optical fibres and tunable diode lasers
|
Schnitzer, I.
|
|
1990
|
5 |
2 |
p. 333-337
5 p.
|
artikel
|
| 16 |
Far-IR spectroscopy of bulk and surface phonon-polaritons on epitaxial layers of CdTe deposited by plasma MOCVD on GaAs substrates
|
Dumelow, T.
|
|
1990
|
5 |
2 |
p. 217-221
5 p.
|
artikel
|
| 17 |
Fundamentals and applications of variable angle spectroscopic ellipsometry
|
Woollam, John A.
|
|
1990
|
5 |
2 |
p. 279-283
5 p.
|
artikel
|
| 18 |
Imaging of the interface between fibres and matrix in the yarns of three-directional carbon-carbon composites by a photoacoustic method
|
Déom, A.
|
|
1990
|
5 |
2 |
p. 135-141
7 p.
|
artikel
|
| 19 |
In situ characterization by reflectance difference spectroscopy of III–V materials and heterojunctions grown by low pressure metal organic chemical vapour deposition
|
Acher, O.
|
|
1990
|
5 |
2 |
p. 223-227
5 p.
|
artikel
|
| 20 |
Measurement of the thermal radial diffusivity of anisotropic materials by the converging thermal wave technique
|
Enguehard, F.
|
|
1990
|
5 |
2 |
p. 127-134
8 p.
|
artikel
|
| 21 |
Micro-Raman study of the residual stress in molecular-beam-epitaxy-grown Al x Ga1−x As/GaAs multilayer structures
|
Iizuka, K.
|
|
1990
|
5 |
2 |
p. 261-264
4 p.
|
artikel
|
| 22 |
Modelling of the photothermal radiometric response of a layered dielectric-on-semiconductor structure
|
Little, I.
|
|
1990
|
5 |
2 |
p. 89-93
5 p.
|
artikel
|
| 23 |
Non-contacting determination of carrier lifetime and surface recombination velocity using photothermal radiometry
|
Sheard, S.J.
|
|
1990
|
5 |
2 |
p. 101-105
5 p.
|
artikel
|
| 24 |
Non-destructive, non-contact characterization of silicon using photothermal radiometry
|
Hiller, T.M.
|
|
1990
|
5 |
2 |
p. 107-111
5 p.
|
artikel
|
| 25 |
Non-destructive optical and magneto-optical analysis of inhomogeneously doped semiconductors
|
Nies, R.
|
|
1990
|
5 |
2 |
p. 191-197
7 p.
|
artikel
|
| 26 |
On the structure of the eigenmodes of surface electromagnetic waves on metals
|
Pedersen, J.H.
|
|
1990
|
5 |
2 |
p. 199-203
5 p.
|
artikel
|
| 27 |
Optical evidence of precipitates in arsenic-implanted silicon
|
Borghesi, A.
|
|
1990
|
5 |
2 |
p. 229-232
4 p.
|
artikel
|
| 28 |
Optical spectroscopy of semiconductor surfaces
|
Del Sole, R.
|
|
1990
|
5 |
2 |
p. 177-182
6 p.
|
artikel
|
| 29 |
Opto-thermal non-destructive examination of surface coatings
|
Imhof, R.E.
|
|
1990
|
5 |
2 |
p. 113-117
5 p.
|
artikel
|
| 30 |
Polarized IR reflectivity of CdGeAs2
|
Artús, L.
|
|
1990
|
5 |
2 |
p. 239-242
4 p.
|
artikel
|
| 31 |
Preface
|
Crean, G.M.
|
|
1990
|
5 |
2 |
p. vii-
1 p.
|
artikel
|
| 32 |
Quality of molecular-beam-epitaxy-grown GaAs on Si(100) studied by ellipsometry
|
Rossow, U.
|
|
1990
|
5 |
2 |
p. 309-312
4 p.
|
artikel
|
| 33 |
Quantum interference effects in the optical second-harmonic response tensor of a metal surface
|
Keller, O.
|
|
1990
|
5 |
2 |
p. 183-189
7 p.
|
artikel
|
| 34 |
Raman and IR spectroscopies: a useful combination to study semiconductor interfaces
|
Zahn, D.R.T.
|
|
1990
|
5 |
2 |
p. 249-253
5 p.
|
artikel
|
| 35 |
Raman scattering from In x Ga1−x As grown on GaAs(001) by molecular beam epitaxy
|
Sobiesierski, Z.
|
|
1990
|
5 |
2 |
p. 265-268
4 p.
|
artikel
|
| 36 |
Reflected polarized light microscopy of the ferroelastic domain structures of YBa2Cu3O7−x
|
Rabe, H.
|
|
1990
|
5 |
2 |
p. 243-248
6 p.
|
artikel
|
| 37 |
Silicon implantation of GaAs at low and medium doses: Raman assessment of the dopant activation
|
Zekeng, S.
|
|
1990
|
5 |
2 |
p. 269-273
5 p.
|
artikel
|
| 38 |
Spectroscopic ellipsometry characterization of silicon-on-insulator materials
|
Vanhellemont, J.
|
|
1990
|
5 |
2 |
p. 301-307
7 p.
|
artikel
|
| 39 |
Structural analysis of optical fibre preforms fabricated by the Sol-Gel process
|
Elias, A.M.
|
|
1990
|
5 |
2 |
p. 339-343
5 p.
|
artikel
|
| 40 |
Study of bulk and surface phonons and plasmons in GaAs/AlAs superlattices by Far-IR and Raman spectroscopy
|
Dumelow, T.
|
|
1990
|
5 |
2 |
p. 205-209
5 p.
|
artikel
|
| 41 |
The kinetics of titanium monosilicide growth studied by three-wavelength ellipsometry
|
de Nijs, J.M.M.
|
|
1990
|
5 |
2 |
p. 313-317
5 p.
|
artikel
|
| 42 |
Theory of picosecond transient reflectance measurement of thermal and elastic properties of thin metal films
|
Bozóki, Zoltán
|
|
1990
|
5 |
2 |
p. 147-150
4 p.
|
artikel
|
| 43 |
Thermal non-linearities of semiconductor-doped glasses in the near-IR region
|
Bertolotti, M.
|
|
1990
|
5 |
2 |
p. 143-145
3 p.
|
artikel
|
| 44 |
Thermal wave measurements in ion-implanted silicon
|
Queirolo, G.
|
|
1990
|
5 |
2 |
p. 95-100
6 p.
|
artikel
|
| 45 |
Thermal wave probing of the optical electronic and thermal properties of semiconductors
|
Fournier, D.
|
|
1990
|
5 |
2 |
p. 83-88
6 p.
|
artikel
|
| 46 |
The theory and application of contactless microwave lifetime measurement
|
Otaredian, T.
|
|
1990
|
5 |
2 |
p. 151-156
6 p.
|
artikel
|
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