| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An approach to a new machine design for implantation at medium and high energies
|
Bliman, S.
|
|
1989
|
2 |
1-3 |
p. 211-216
6 p.
|
artikel
|
| 2 |
ARAMIS: an accelerator for research on astrophysics, microanalysis and implantation in solids
|
Cottereau, E.
|
|
1989
|
2 |
1-3 |
p. 217-221
5 p.
|
artikel
|
| 3 |
A silicon-on-insulator structure formed by implantation of megaelectronvolt oxygen
|
Grob, J.J.
|
|
1989
|
2 |
1-3 |
p. 123-129
7 p.
|
artikel
|
| 4 |
A study of the distribution of hydrogen and strain in proton-bombarded liquid-encapsulated Czochralski-grown GaAs by double-crystal x-ray diffraction and secondary ion mass spectrometry
|
Brown, G.T.
|
|
1989
|
2 |
1-3 |
p. 91-97
7 p.
|
artikel
|
| 5 |
Beryllium-bombarded In0.53Ga0.47As and InP photoconductors with response times below 3 ps
|
Schaelin, Alois
|
|
1989
|
2 |
1-3 |
p. 81-85
5 p.
|
artikel
|
| 6 |
Comparison between “intermediate”- and “heavy”-ion-bombardment-induced silicon amorphization at room temperature
|
Claverie, A.
|
|
1989
|
2 |
1-3 |
p. 99-104
6 p.
|
artikel
|
| 7 |
Current status of the technology of silicon separated by implantation of oxygen
|
Baumgart, Helmut
|
|
1989
|
2 |
1-3 |
p. 111-122
12 p.
|
artikel
|
| 8 |
Deep implants by channeling implantation
|
Schreutelkamp, R.J.
|
|
1989
|
2 |
1-3 |
p. 139-143
5 p.
|
artikel
|
| 9 |
Depth distributions of megaelectronvolt 14N implanted into various solids at elevated fluences
|
Fink, D.
|
|
1989
|
2 |
1-3 |
p. 49-54
6 p.
|
artikel
|
| 10 |
Depth profiles and damage annealing of 1.06 MeV As2+ Implanted in silicon
|
Armigliato, A.
|
|
1989
|
2 |
1-3 |
p. 63-67
5 p.
|
artikel
|
| 11 |
Design study of high energy, high current, R.F. accelerators for ion implantation
|
Thomae, R.W.
|
|
1989
|
2 |
1-3 |
p. 231-235
5 p.
|
artikel
|
| 12 |
Dynamic computer simulation of high energy ion implantation
|
Möller, Wolfhard
|
|
1989
|
2 |
1-3 |
p. 21-25
5 p.
|
artikel
|
| 13 |
Editorial Board
|
|
|
1989
|
2 |
1-3 |
p. iii-
1 p.
|
artikel
|
| 14 |
Electronic properties of defects created by 1.6 GeV argon ions in silicon
|
Krynicki, J.
|
|
1989
|
2 |
1-3 |
p. 105-110
6 p.
|
artikel
|
| 15 |
Experimental and calculated range moments of deep implants
|
Weiser, M.
|
|
1989
|
2 |
1-3 |
p. 55-61
7 p.
|
artikel
|
| 16 |
Features and applications of a versatile megavolt ion accelerator
|
Koelewijn, W.A.
|
|
1989
|
2 |
1-3 |
p. 243-248
6 p.
|
artikel
|
| 17 |
Growth of buried silicon nitride layers induced by fast thermal annealing of N2 + -implanted silicon substrates
|
Chamas, T.
|
|
1989
|
2 |
1-3 |
p. 157-161
5 p.
|
artikel
|
| 18 |
High energy implanted transistor fabrication
|
Middlehoek, J.
|
|
1989
|
2 |
1-3 |
p. 15-19
5 p.
|
artikel
|
| 19 |
Implants of 15–50 MeV Boron ions into silicon
|
la Ferla, A.
|
|
1989
|
2 |
1-3 |
p. 69-73
5 p.
|
artikel
|
| 20 |
Interaction of megaelectronvolt ion beams with silicon: Amorphization, recrystallization and diffusion
|
Poate, J.M.
|
|
1989
|
2 |
1-3 |
p. 41-47
7 p.
|
artikel
|
| 21 |
Investigation of the AgSi interface formed under simultaneous irradiation using a high energy ion beam
|
Budinavičius, J.
|
|
1989
|
2 |
1-3 |
p. 203-206
4 p.
|
artikel
|
| 22 |
Ion beam effects on polymers: the influence of energy loss and molecular parameters
|
Puglisi, Orazio
|
|
1989
|
2 |
1-3 |
p. 167-175
9 p.
|
artikel
|
| 23 |
Lattice damage and silicide formation by deep implantations into silicon
|
Te Kaat, E.H.
|
|
1989
|
2 |
1-3 |
p. 145-156
12 p.
|
artikel
|
| 24 |
Linear-accelerator-based high energy implanter with milliampere capability
|
Boisseau, P.
|
|
1989
|
2 |
1-3 |
p. 223-230
8 p.
|
artikel
|
| 25 |
Lupin-3D: A three-dimensional calculation of damage energy distribution and cascade parameters for ion-implanted materials
|
Vieu, C.
|
|
1989
|
2 |
1-3 |
p. 27-32
6 p.
|
artikel
|
| 26 |
Megaelectronvolt implantations in silicon very-large-scale integration
|
Saxena, A.N.
|
|
1989
|
2 |
1-3 |
p. 1-13
13 p.
|
artikel
|
| 27 |
Megaelectronvolt implants into GaAs using a hot-cathode penning ion source
|
Gwilliam, R.M.
|
|
1989
|
2 |
1-3 |
p. 249-253
5 p.
|
artikel
|
| 28 |
Modifications by rare gas bombardment of aluminium nitride formed by direct implantation
|
Lucas, S.
|
|
1989
|
2 |
1-3 |
p. 183-187
5 p.
|
artikel
|
| 29 |
Monte Carlo simulations of ion implantation in crystalline targets
|
Mazzone, A.M.
|
|
1989
|
2 |
1-3 |
p. 33-40
8 p.
|
artikel
|
| 30 |
Nitrogen implantation into metals: a numerical model to explain the high temperature shape of the nitrogen depth profile
|
Piette, M.
|
|
1989
|
2 |
1-3 |
p. 189-194
6 p.
|
artikel
|
| 31 |
Non-destructive characterization of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry
|
Fried, M.
|
|
1989
|
2 |
1-3 |
p. 131-137
7 p.
|
artikel
|
| 32 |
Photoresist outgassing and carbonization during high energy ion implantation
|
O'Connor, John P.
|
|
1989
|
2 |
1-3 |
p. 177-182
6 p.
|
artikel
|
| 33 |
Piezoresistive properties under hydrostatic pressure of silicon layers separated by oxygen implantation
|
Vettese, F.
|
|
1989
|
2 |
1-3 |
p. 163-166
4 p.
|
artikel
|
| 34 |
Proton-irradiated silicon: Complete electrical characterization of the induced dominant deep defects after long-term annealing
|
Hüppi, Marcel W.
|
|
1989
|
2 |
1-3 |
p. 87-90
4 p.
|
artikel
|
| 35 |
Results of boron implantation into silicon diodes and metaloxide-semiconductor gate-controlled turn-off thyristors
|
Oppermann, Klaus-G.
|
|
1989
|
2 |
1-3 |
p. 75-79
5 p.
|
artikel
|
| 36 |
Temperature and dose dependences of nitrogen implantation into iron
|
Terwagne, G.
|
|
1989
|
2 |
1-3 |
p. 195-201
7 p.
|
artikel
|
| 37 |
The dynamitron tandem accelerator—a useful tool for ion beam applications
|
Brand, K.
|
|
1989
|
2 |
1-3 |
p. 237-242
6 p.
|
artikel
|
| 38 |
Thermal wave characterization of silicon which had been high energy ion implanted and furnace annealed
|
Crean, G.M.
|
|
1989
|
2 |
1-3 |
p. 207-210
4 p.
|
artikel
|
Tijdschrift beschrijving