| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Author index to volume 19
|
|
|
1993
|
19 |
3 |
p. 292-
1 p.
|
artikel
|
| 2 |
Carbide and nitride/carbide layers in iron synthesized by ion implantation
|
Pérez-Martin, A.M.C.
|
|
1993
|
19 |
3 |
p. 281-284
4 p.
|
artikel
|
| 3 |
Doping of InGaP epitaxial layers grown by low pressure metal-organic chemical vapor deposition
|
Wu, C.C.
|
|
1993
|
19 |
3 |
p. 234-239
6 p.
|
artikel
|
| 4 |
Electro-ceramics: Properties and applications MIT summer professional program, Cambridge, MA, USA, July 19–21, 1993
|
|
|
1993
|
19 |
3 |
p. 290-
1 p.
|
artikel
|
| 5 |
Erratum
|
|
|
1993
|
19 |
3 |
p. 291-
1 p.
|
artikel
|
| 6 |
Intelligent robotic systems, Cambridge, MA, USA, November 7–12, 1993
|
|
|
1993
|
19 |
3 |
p. 290-
1 p.
|
artikel
|
| 7 |
Ion conductivity of Nasicon ceramics:effects of texture and doping with B2O3 and Al2O3
|
Høj, J.W.
|
|
1993
|
19 |
3 |
p. 228-233
6 p.
|
artikel
|
| 8 |
Low pressure diamond synthesis for electronic applications
|
Ravi, K.V.
|
|
1993
|
19 |
3 |
p. 203-227
25 p.
|
artikel
|
| 9 |
Microtwins and partial dislocations in GaAlAs alloys after indentation at room temperature: the effects of composition and doping
|
Charsley, P.
|
|
1993
|
19 |
3 |
p. 261-269
9 p.
|
artikel
|
| 10 |
OE/FIBERS '93, Boston, MA, USA, September 7–11, 1993
|
|
|
1993
|
19 |
3 |
p. 290-
1 p.
|
artikel
|
| 11 |
On epitaxial Si 1−x Ge x thin film growth by chemical vapour deposition from a silane, germane, hydrogen chloride and hydrogen gas mixture
|
Kühne, H.
|
|
1993
|
19 |
3 |
p. 251-256
6 p.
|
artikel
|
| 12 |
Photoacoustic and microhardness study of structural relaxation in electrodeposited Fe32Ni45P23 amorphous alloys
|
Gantchev, D.
|
|
1993
|
19 |
3 |
p. 276-280
5 p.
|
artikel
|
| 13 |
Preparation and sintering of aluminum nitride suitable for electronic substrate purposes
|
Raghavan, N.S.
|
|
1993
|
19 |
3 |
p. 240-250
11 p.
|
artikel
|
| 14 |
1993 Quebec international symposium on and optoelectronic applied and engineering, Quebec City, Que., Canada, August 15–20, 1993
|
|
|
1993
|
19 |
3 |
p. 290-
1 p.
|
artikel
|
| 15 |
Schottky device behavior of n-Si/Pd2Si/Al and n-Si/CoSi2/Al contacts with and without a Ta2N diffusion barrier
|
Farooq, Mukta S.
|
|
1993
|
19 |
3 |
p. 270-275
6 p.
|
artikel
|
| 16 |
Solid state sensors, batteries and fuel cells, MIT summer professional program, Cambridge, MA, USA, July 19–23, 1993
|
|
|
1993
|
19 |
3 |
p. 290-
1 p.
|
artikel
|
| 17 |
SPIE's OE/TECHNOLOGY '93, San Jose, CA, USA, November 14–20, 1993
|
|
|
1993
|
19 |
3 |
p. 290-
1 p.
|
artikel
|
| 18 |
Subject index of volume 19
|
|
|
1993
|
19 |
3 |
p. 293-297
5 p.
|
artikel
|
| 19 |
Synthesis of YBaCuO superconductors using organometallic precursors
|
Lee, Y.J.
|
|
1993
|
19 |
3 |
p. 257-260
4 p.
|
artikel
|
| 20 |
The electronic effect of Ti4+, Zr4+ and Ge4+ dopings upon the physical properties of In2O3 and Sn-doped In2O3 ceramics: application to new highly-transparent conductive electrodes
|
Campet, G.
|
|
1993
|
19 |
3 |
p. 285-289
5 p.
|
artikel
|
| 21 |
Visual communications and image processing '93, Cambridge, MA, USA, November 7–12, 1993
|
|
|
1993
|
19 |
3 |
p. 290-
1 p.
|
artikel
|
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