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                             43 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A comparison between the irradiation damage response of spinel and zirconia due to Xe ion bombardment E. Sickafus, Kurt
 1998
 253 1-2 p. 78-85
8 p.
 artikel
2 Amorphization of ceramic materials by ion beam irradiation Wang, L.M.
 1998
 253 1-2 p. 106-113
8 p.
 artikel
3 Amorphization of the silicon substrate and stress-relaxation in HfN films bombarded with Au ions Nowak, R
 1998
 253 1-2 p. 328-336
9 p.
 artikel
4 A new approach to thermal-spike sputtering with ions and laser pulses Kelly, Roger
 1998
 253 1-2 p. 178-193
16 p.
 artikel
5 Climb of dislocations in GaAs by irradiation Yonenaga, I.
 1998
 253 1-2 p. 148-150
3 p.
 artikel
6 Comparison of implantation with Ni2+ and Au2+ ions on the indentation response of sapphire Nowak, R.
 1998
 253 1-2 p. 167-177
11 p.
 artikel
7 Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion Agarwal, Aditya
 1998
 253 1-2 p. 269-274
6 p.
 artikel
8 Editorial 1998
 253 1-2 p. XI-XII
nvt p.
 artikel
9 Effect of nitrogen ion-implantation on the tribological properties and hardness of TiN films Manory, R.R.
 1998
 253 1-2 p. 319-327
9 p.
 artikel
10 Formation of polycrystalline β-FeSi2 layers by ion-implantation and their optical properties Kakemoto, Hirofumi
 1998
 253 1-2 p. 284-291
8 p.
 artikel
11 Formation of Si3N4 and SiC composite by nitrogen implantation Miyagawa, S.
 1998
 253 1-2 p. 143-147
5 p.
 artikel
12 Implantation damage and epitaxial regrowth of silicon studied by differential reflectometry Hummel, R.E.
 1998
 253 1-2 p. 50-61
12 p.
 artikel
13 Index 1998
 253 1-2 p. 338-341
4 p.
 artikel
14 Index 1998
 253 1-2 p. 337-
1 p.
 artikel
15 Ion beam deposition and surface characterization of thin multi-component oxide films during growth 1 Invited paper presented at the Engineering Conference on Ion Beam Surface Modification of Ceramics, Il Ciocco, Italy, May 19–23, 1997. 1 Krauss, A.R.
 1998
 253 1-2 p. 221-233
13 p.
 artikel
16 Ion beam modification of ceramics McHargue, Carl J.
 1998
 253 1-2 p. 94-105
12 p.
 artikel
17 Ion beam modification of solids: towards intelligent materials Takagi, Toshinori
 1998
 253 1-2 p. 30-41
12 p.
 artikel
18 Ion implantation as a tool in the synthesis of practical third-order nonlinear optical materials Haglund Jr., Richard F.
 1998
 253 1-2 p. 275-283
9 p.
 artikel
19 Ion implantation of semiconductors Williams, J.S.
 1998
 253 1-2 p. 8-15
8 p.
 artikel
20 Low-energy nitrogen-ion doping into GaAs and its optical properties Shima, Takayuki
 1998
 253 1-2 p. 301-305
5 p.
 artikel
21 Measurement of mechanical properties by ultra-low load indentation Pharr, G.M.
 1998
 253 1-2 p. 151-159
9 p.
 artikel
22 Mechanical property characterisation of small volumes of brittle materials with spherical tipped indenters Swain, M.V.
 1998
 253 1-2 p. 160-166
7 p.
 artikel
23 Mechanisms of ion beam induced atomic mixing in solids Bolse, Wolfgang
 1998
 253 1-2 p. 194-201
8 p.
 artikel
24 Metastable materials formation by ion beam assisted deposition: application to metal clusters in ceramic matrices Hubler, G.K.
 1998
 253 1-2 p. 212-220
9 p.
 artikel
25 Microstructural changes in ion implanted titanium nitride Perry, Anthony J
 1998
 253 1-2 p. 310-318
9 p.
 artikel
26 Microstructure and composition of titanium nitride formed by ion beam enhanced nitrogen sorption of evaporated titanium under argon ion irradiation Ensinger, W
 1998
 253 1-2 p. 234-239
6 p.
 artikel
27 Modification of silicon nitride ceramics with high intensity pulsed ion beams Brenscheidt, F.
 1998
 253 1-2 p. 86-93
8 p.
 artikel
28 Modified structure of sapphire with 51V ion implantation followed by thermal annealing Naramoto, Hiroshi
 1998
 253 1-2 p. 114-120
7 p.
 artikel
29 Nanometer-size dispersions of iron in sapphire prepared by ion implantation and annealing McHargue, C.J.
 1998
 253 1-2 p. 1-7
7 p.
 artikel
30 Nitride layers formed by nitrogen implantation into metals Miyagawa, Y.
 1998
 253 1-2 p. 135-142
8 p.
 artikel
31 Non-linear processes in the gas cluster ion beam modification of solid surfaces Yamada, I
 1998
 253 1-2 p. 249-257
9 p.
 artikel
32 Optical and electrical properties of Si+ ion-implanted GaAs Shima, T
 1998
 253 1-2 p. 306-309
4 p.
 artikel
33 Potassium niobate waveguides: He+ implantation in bulk single crystals and pulsed laser deposition of thin films Beckers, L
 1998
 253 1-2 p. 292-295
4 p.
 artikel
34 Radiation response of FeTiO3, MgTiO3, and α-Al2O3 Devanathan, R.
 1998
 253 1-2 p. 131-134
4 p.
 artikel
35 Relaxation phenomena in keV-ion implanted hydrogenated amorphous silicon carbide Musumeci, P
 1998
 253 1-2 p. 296-300
5 p.
 artikel
36 Semiconductor processing by plasma immersion ion implantation Ensinger, W.
 1998
 253 1-2 p. 258-268
11 p.
 artikel
37 Stress, hydration, and optical absorption in ion-implanted aluminum oxide Arnold, G.W.
 1998
 253 1-2 p. 71-77
7 p.
 artikel
38 Structure and properties of ion-beam-modified (6H) silicon carbide Weber, W.J.
 1998
 253 1-2 p. 62-70
9 p.
 artikel
39 Tailoring of the properties of ferrites by latent track production Costantini, J.M.
 1998
 253 1-2 p. 121-130
10 p.
 artikel
40 The influence of stress during ion beam mixing Nastasi, M.
 1998
 253 1-2 p. 202-211
10 p.
 artikel
41 The role of defect excesses in damage formation in Si during ion implantation at elevated temperature Holland, O.W.
 1998
 253 1-2 p. 240-248
9 p.
 artikel
42 The role of defects during amorphization and crystallization processes in ion implanted Si Motooka, T.
 1998
 253 1-2 p. 42-49
8 p.
 artikel
43 Topological modeling of cascade amorphization in network structures using local rules Hobbs, Linn W.
 1998
 253 1-2 p. 16-29
14 p.
 artikel
                             43 gevonden resultaten
 
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