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                             47 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Annealing Studies of magnetic Czochralski silicon radiation detectors Pellegrini, G.
 2005
 552 1-2 p. 27-33
7 p.
 artikel
2 Author Index 2005
 552 1-2 p. 245-257
13 p.
 artikel
3 Characterization of oxygen dimer-enriched silicon detectors Boisvert, V.
 2005
 552 1-2 p. 49-55
7 p.
 artikel
4 Characterization of standard and oxygenated float zone Si diodes under radiotherapy beams Casati, M.
 2005
 552 1-2 p. 158-162
5 p.
 artikel
5 Charge collection properties of X-ray irradiated monolithic active pixel sensors Deveaux, M.
 2005
 552 1-2 p. 118-123
6 p.
 artikel
6 CMS inner tracker detector modules Sguazzoni, Giacomo
 2005
 552 1-2 p. 212-215
4 p.
 artikel
7 Conference photo 2005
 552 1-2 p. xii-
1 p.
 artikel
8 Contents 2005
 552 1-2 p. xiii-xvi
nvt p.
 artikel
9 Defect attributed variations of the photoconductivity and photoluminescence in the HVPE and MOCVD as-grown and irradiated GaN structures Gaubas, E.
 2005
 552 1-2 p. 82-87
6 p.
 artikel
10 Developing radiation hard silicon for the LHCb vertex locator Parkes, C.
 2005
 552 1-2 p. 216-218
3 p.
 artikel
11 Development of a CVD diamond Beam Condition Monitor for CMS at the Large Hadron Collider Fernandez-Hernando, L.
 2005
 552 1-2 p. 183-188
6 p.
 artikel
12 Diamond dosimetry: Outcomes of the CANDIDO and CONRAD INFN projects Bucciolini, M.
 2005
 552 1-2 p. 189-196
8 p.
 artikel
13 Dosimetric characterization of CVD diamonds irradiated with 62MeV proton beams Cirrone, G.A.P.
 2005
 552 1-2 p. 197-202
6 p.
 artikel
14 Effect of heavy proton and neutron irradiations on epitaxial 4H-SiC Schottky diodes Sciortino, S.
 2005
 552 1-2 p. 138-145
8 p.
 artikel
15 Effect of proton fluence on point defect formation in epitaxial silicon for radiation detectors Kozłowski, R.
 2005
 552 1-2 p. 71-76
6 p.
 artikel
16 Effects of photon irradiation on the time response of diamond photodetectors De Sio, A.
 2005
 552 1-2 p. 203-207
5 p.
 artikel
17 Electrically active centers induced by electron irradiation in n-type si detectors Ögmundsson, A.
 2005
 552 1-2 p. 61-65
5 p.
 artikel
18 Elimination and formation of electrically active defects in hydrogenated silicon particle detectors irradiated with electrons Makarenko, L.F.
 2005
 552 1-2 p. 77-81
5 p.
 artikel
19 Evaluation of possible equivalent circuits for the description of the CV characteristics of heavily irradiated Si diodes Campbell, D.
 2005
 552 1-2 p. 152-157
6 p.
 artikel
20 Excess noise factor of neutron-irradiated silicon avalanche photodiodes Pilicer, E.
 2005
 552 1-2 p. 146-151
6 p.
 artikel
21 Fluence dependence of charge collection of irradiated pixel sensors Rohe, T.
 2005
 552 1-2 p. 232-238
7 p.
 artikel
22 Gamma radiation induced space charge sign inversion and re-inversion in p-type MCZ Si detectors and in proton-irradiated n-type MCZ Si detectors Li, Z.
 2005
 552 1-2 p. 34-42
9 p.
 artikel
23 High energy proton damage effects in thin high resistivity FZ silicon detectors Fretwurst, E.
 2005
 552 1-2 p. 124-130
7 p.
 artikel
24 Inside front cover (Editorial Board) 2005
 552 1-2 p. CO2-
1 p.
 artikel
25 Investigation of defects in CVD diamond: Influence for radiotherapy applications Guerrero, M.J.
 2005
 552 1-2 p. 105-111
7 p.
 artikel
26 Modeling of deep traps in diamond detectors by means of β particles-induced conductivity measurements Lagomarsino, S.
 2005
 552 1-2 p. 98-104
7 p.
 artikel
27 Moisture sensitivity of AC-coupled silicon strip sensors Hartjes, F.G.
 2005
 552 1-2 p. 168-175
8 p.
 artikel
28 [No title] Borchi, Emilio
 2005
 552 1-2 p. vii-
1 p.
 artikel
29 [No title] 2005
 552 1-2 p. ix-xi
nvt p.
 artikel
30 [No title] 2005
 552 1-2 p. viii-
1 p.
 artikel
31 Preliminary radiation tests of 32μm thick hydrogenated amorphous silicon films Despeisse, M.
 2005
 552 1-2 p. 88-92
5 p.
 artikel
32 Proceedings of the Fifth International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices 2005
 552 1-2 p. v-
1 p.
 artikel
33 Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon Bruzzi, M.
 2005
 552 1-2 p. 20-26
7 p.
 artikel
34 Production of endcap modules for the ATLAS semiconductor tracker Schieck, J.
 2005
 552 1-2 p. 208-211
4 p.
 artikel
35 Proton irradiation results of p+/n−/n+ Cz-Si detectors processed on p-type boron-doped substrates with thermal donor-induced space charge sign inversion Härkönen, J.
 2005
 552 1-2 p. 43-48
6 p.
 artikel
36 Radiation damage effects in the NA60 silicon pixel detectors Keil, M.
 2005
 552 1-2 p. 239-243
5 p.
 artikel
37 Radiation-induced donor generation in epitaxial and Cz diodes Pintilie, I.
 2005
 552 1-2 p. 56-60
5 p.
 artikel
38 Radiation monitoring with CVD diamonds in BABAR Edwards, A.J.
 2005
 552 1-2 p. 176-182
7 p.
 artikel
39 Recent advancements in the development of radiation hard semiconductor detectors for S-LHC Fretwurst, E.
 2005
 552 1-2 p. 7-19
13 p.
 artikel
40 Semi-3D silicon detector and initial results of its performance Roy, Amitava
 2005
 552 1-2 p. 112-117
6 p.
 artikel
41 SiC detectors for neutron monitoring Manfredotti, C.
 2005
 552 1-2 p. 131-137
7 p.
 artikel
42 Some features of current–voltage characteristics of irradiated GaP light diodes Litovchenko, P.
 2005
 552 1-2 p. 93-97
5 p.
 artikel
43 Status and radiation hardness of the CDF RunII silicon detector Lu, R.-S.
 2005
 552 1-2 p. 219-223
5 p.
 artikel
44 Study of carrier recombination and trapping processes in γ-ray- and proton-irradiated silicon Gaubas, E.
 2005
 552 1-2 p. 66-70
5 p.
 artikel
45 The control and monitoring system for the ATLAS semi-conductor tracker Llatas, M. Chamizo
 2005
 552 1-2 p. 163-167
5 p.
 artikel
46 Tracking detectors for the LHC upgrade Sadrozinski, Hartmut F.-W.
 2005
 552 1-2 p. 1-6
6 p.
 artikel
47 What can be learned from the BABAR Silicon Vertex Tracker running experience Re, V.
 2005
 552 1-2 p. 224-231
8 p.
 artikel
                             47 gevonden resultaten
 
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