Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon
Titel:
Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon
Auteur:
Bruzzi, M. Bisello, D. Borrello, L. Borchi, E. Boscardin, M. Candelori, A. Creanza, D. Dalla Betta, G.-F. DePalma, M. Dittongo, S. Focardi, E. Khomenkov, V. Litovchenko, A. Macchiolo, A. Manna, N. Menichelli, D. Messineo, A. Miglio, S. Petasecca, M. Piemonte, C. Pignatel, G.U. Radicci, V. Ronchin, S. Scaringella, M. Segneri, G. Sentenac, D. Tosi, C. Zorzi, N.
Verschenen in:
Nuclear instruments and methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment