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Defect attributed variations of the photoconductivity and photoluminescence in the HVPE and MOCVD as-grown and irradiated GaN structures |
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Titel: |
Defect attributed variations of the photoconductivity and photoluminescence in the HVPE and MOCVD as-grown and irradiated GaN structures |
Auteur: |
Gaubas, E. Pobedinskas, P. Vaitkus, J. Uleckas, A. Žukauskas, A. Blue, A. Rahman, M. Smith, K.M. Aujol, E. Beaumont, B. Faurie, J.-P. Gibart, P. |
Verschenen in: |
Nuclear instruments and methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment |
Paginering: |
Jaargang 552 (2005) nr. 1-2 pagina's 6 p. |
Jaar: |
2005 |
Inhoud: |
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Uitgever: |
Elsevier B.V. |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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