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                             92 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A channeling study of ion implantation damage in UO2, and UN Matzke, Hj.
 1990
 46 1-4 p. 117-121
5 p.
 artikel
2 Aging effects on wettability and structure of ion implanted silicone Yoshiaki, Suzuki
 1990
 46 1-4 p. 354-357
4 p.
 artikel
3 Alpha irradiation effects in Ca2Nd8(SiO4)6O2 Weber, W.J.
 1990
 46 1-4 p. 160-164
5 p.
 artikel
4 Amino acid decomposition induced by keV ion irradiation Foti, A.M.
 1990
 46 1-4 p. 361-363
3 p.
 artikel
5 Annealing behaviour of a-axis sapphire amorphized by high dose indium ion implantation Sood, D.K.
 1990
 46 1-4 p. 194-201
8 p.
 artikel
6 Annealing environment effects in solid-phase epitaxial regrowth of Fe-implanted Al2O3 McCallum, J.C.
 1990
 46 1-4 p. 137-143
7 p.
 artikel
7 Annealing kinetics of heavy ion radiation damage in crystalline minerals Sandhu, A.S.
 1990
 46 1-4 p. 122-124
3 p.
 artikel
8 Anomalous behaviour of environment affected CR-39 at elevated temperatures Bhatia, R.K.
 1990
 46 1-4 p. 358-360
3 p.
 artikel
9 “Anomalous” fading in irradiated α-Al2O3 Wood, R.A.
 1990
 46 1-4 p. 189-193
5 p.
 artikel
10 An overview of ion-implanted optical waveguide profiles Townsend, P.D.
 1990
 46 1-4 p. 18-25
8 p.
 artikel
11 Author index 1990
 46 1-4 p. 461-467
7 p.
 artikel
12 Characterization of polycrystalline α-Al2O3, zirconium implanted and annealed at various temperatures Donnet, C.
 1990
 46 1-4 p. 89-93
5 p.
 artikel
13 Chemical reactions and physical property modifications induced by keV ion beams in polymers Marletta, Giovanni
 1990
 46 1-4 p. 295-305
11 p.
 artikel
14 Committees 1990
 46 1-4 p. x-
1 p.
 artikel
15 Conference photography 1990
 46 1-4 p. viii-ix
nvt p.
 artikel
16 Crosslinking yield in particle beam irradiated polystyrene Licciardello, A.
 1990
 46 1-4 p. 338-341
4 p.
 artikel
17 Current views on electronic and cascade sputtering of alkali halides Szymonski, Marek
 1990
 46 1-4 p. 427-434
8 p.
 artikel
18 Damage induced by high electronic stopping power in SiO2 quartz Toulemonde, M.
 1990
 46 1-4 p. 64-68
5 p.
 artikel
19 Damage of YBa2Cu3O x by ion irradiation Özkan, H.
 1990
 46 1-4 p. 291-294
4 p.
 artikel
20 Defect aggregation in gamma-irradiated RbI using optical techniques Allen, A.M.T.
 1990
 46 1-4 p. 240-243
4 p.
 artikel
21 Defect structures in ionic materials Catlow, C.R.A.
 1990
 46 1-4 p. 52-59
8 p.
 artikel
22 Editorial Board 1990
 46 1-4 p. ii-iii
nvt p.
 artikel
23 Electronic defects induced by X-rays in powders of alkaline iodides Bernard, M.
 1990
 46 1-4 p. 235-239
5 p.
 artikel
24 Electronic sputtering of oxygen and water molecules prom thin films of water ice bombarded by MeV Ne+ ions Bénit, J.
 1990
 46 1-4 p. 448-451
4 p.
 artikel
25 Electron irradiation induced structural modifications in ferroelectric P(VDF-TrFE) copolymers Macchi, F.
 1990
 46 1-4 p. 324-329
6 p.
 artikel
26 Enhancement of copper-sapphire adhesion induced by ion beam mixing Abonneau, E.
 1990
 46 1-4 p. 111-116
6 p.
 artikel
27 Etching and annealing kinetics of heavy ion tracks in quartz crystal Singh, Lakhwant
 1990
 46 1-4 p. 149-151
3 p.
 artikel
28 F-center accumulation as a mechanism of multiple-pulse, laser-induced bulk damage in KBr and KI at 532 nm Casper, R.Thomas
 1990
 46 1-4 p. 231-234
4 p.
 artikel
29 Formation of a silicon / nitride layer system by N + implantation Gärtner, K.
 1990
 46 1-4 p. 405-408
4 p.
 artikel
30 Growth and decay kinetics of defect centers in high-purity fused silicas irradiated at 77 K with X-Rays or 6.4-eV laser light Griscom, David L.
 1990
 46 1-4 p. 12-17
6 p.
 artikel
31 High temperature annealing of He+ ion-implanted quartz optical waveguides Chandler, P.J.
 1990
 46 1-4 p. 69-73
5 p.
 artikel
32 Hydrogen analysis in sodium β″-alumina implanted with argon ions Freire Jr., F.L.
 1990
 46 1-4 p. 152-155
4 p.
 artikel
33 Hydrogenated carbon layers produced by ion beam irradiation of PMMA and polystyrene films Davenas, J.
 1990
 46 1-4 p. 317-323
7 p.
 artikel
34 Influence of low energy electron irradiation on adhesion and electrical parameters of metal-insulator-GaAs interfaces Tay, M.
 1990
 46 1-4 p. 379-383
5 p.
 artikel
35 Ion beam analysis of the effects of radiation on the chemical etching of poly(tetrafluorethylene) Arnold, G.W.
 1990
 46 1-4 p. 330-333
4 p.
 artikel
36 Ion-beam damage to quartz crystals Macaulay-Newcombe, R.G.
 1990
 46 1-4 p. 180-184
5 p.
 artikel
37 Ion beam excited luminescence of sapphire Al Ghamdi, A.
 1990
 46 1-4 p. 133-136
4 p.
 artikel
38 Ion beam exposure characteristics of nitrocellulose Mühle, R.
 1990
 46 1-4 p. 347-349
3 p.
 artikel
39 Ion beam induced carbon clusters in polymers Fink, D.
 1990
 46 1-4 p. 342-346
5 p.
 artikel
40 Ion beam induced changes of the refractive index of PMMA Biersack, J.P.
 1990
 46 1-4 p. 309-312
4 p.
 artikel
41 Ion beam irradiation studies of high temperature superconductors Bernas, H.
 1990
 46 1-4 p. 269-275
7 p.
 artikel
42 Ion beam production of Cermets for selective absorption of solar energy Davenas, J.
 1990
 46 1-4 p. 417-421
5 p.
 artikel
43 Ion implantation effect in high T c oxide Y1Ba2Cu3O y Masuda, Kohzoh
 1990
 46 1-4 p. 284-286
3 p.
 artikel
44 Ion irradiation effects for MgF2 films on LiF substrates Farlow, G.C.
 1990
 46 1-4 p. 422-426
5 p.
 artikel
45 Ionized cluster beam deposition and thin insulating films Marek, Sosnowski
 1990
 46 1-4 p. 397-404
8 p.
 artikel
46 Kinetic threshold in ion-induced electron emission from polycrystalline W Bonanno, A.
 1990
 46 1-4 p. 456-459
4 p.
 artikel
47 Laser-induced modifications and the mechanism of intrinsic damage in wide gap optical materials Braunlich, Peter
 1990
 46 1-4 p. 224-230
7 p.
 artikel
48 Laser-induced surface ablation as a probe of optical surface damage mechanisms Chase, L.L.
 1990
 46 1-4 p. 252-255
4 p.
 artikel
49 Lattice disorder in α-Al2O3 induced by niobium implantation Canut, B.
 1990
 46 1-4 p. 128-132
5 p.
 artikel
50 Luminescence during Eu, Fe and Cr implantation into CaF2 Aono, Keiko
 1990
 46 1-4 p. 220-223
4 p.
 artikel
51 Micromechanical properties of electron irradiated PVDF-TrFE copolymers Macchi, F.
 1990
 46 1-4 p. 334-337
4 p.
 artikel
52 Microstructural changes in MgAl2O4 induced by ion irradiation Zinkle, S.J.
 1990
 46 1-4 p. 165-170
6 p.
 artikel
53 Modification of chemical surface properties by ion beam assisted deposition Wolf, G.K.
 1990
 46 1-4 p. 369-378
10 p.
 artikel
54 On the calculation of stresses induced by ion implantation Luyckx, S.B.
 1990
 46 1-4 p. 36-37
2 p.
 artikel
55 On the origin of anomalous ranges of 1.65 GeV 132Xe ions in Muscovite Mica Chadderton, Lewis T.
 1990
 46 1-4 p. 46-51
6 p.
 artikel
56 On the physical models of annealing of radiation induced defects in amorphous Sio2 Devine, R.A.B.
 1990
 46 1-4 p. 261-264
4 p.
 artikel
57 Oxygen depth profiling study of copper oxide films on silicon (100) substrates by 16O(α,α)16O resonance Jian, Li
 1990
 46 1-4 p. 287-290
4 p.
 artikel
58 Oxygen ion implanted germanium — structural properties Ravindra, N.M.
 1990
 46 1-4 p. 409-412
4 p.
 artikel
59 Oxygen irradiation effect in ion-beam-synthesized aluminum oxide layers Shigeo, Ohira
 1990
 46 1-4 p. 413-416
4 p.
 artikel
60 Phase formation study in α-Al2O3 implanted with niobium ions Romana, L.
 1990
 46 1-4 p. 94-97
4 p.
 artikel
61 Physical and chemical aspects of PMMA vapour development Lehockey, E.M.
 1990
 46 1-4 p. 364-368
5 p.
 artikel
62 Physical aspects of ion beam assisted deposition Hubler, G.K.
 1990
 46 1-4 p. 384-391
8 p.
 artikel
63 Preface Davies, J.A.
 1990
 46 1-4 p. vii-
1 p.
 artikel
64 Properties of 57Fe hot-implanted into diamond crystals studied by Mössbauer emission spectroscopy between 4 and 300 K Sawicki, J.A.
 1990
 46 1-4 p. 38-45
8 p.
 artikel
65 Radiation damage and the role of structure in amorphous SiO2 Devine, R.A.B.
 1990
 46 1-4 p. 244-251
8 p.
 artikel
66 Radiation damage in nuclear waste glasses following ion implantation at different temperatures Matzke, Hj.
 1990
 46 1-4 p. 253-260
8 p.
 artikel
67 Radiation damage of lithium ceramics by ion bombardment Özkan, H.
 1990
 46 1-4 p. 202-205
4 p.
 artikel
68 Radiation induced diffusion of Xe implanted into the AZ1350 polymer Behar, M.
 1990
 46 1-4 p. 313-316
4 p.
 artikel
69 Refractive index changes in proton exchange LiNbO3 by ion implantation Glavas, E.
 1990
 46 1-4 p. 156-159
4 p.
 artikel
70 Relation between composition and structure of N-implanted AIN x Kenzo, Kobayashi
 1990
 46 1-4 p. 60-63
4 p.
 artikel
71 Si E′ centers and UV-induced compaction in high purity silica Tsai, T.E.
 1990
 46 1-4 p. 265-268
4 p.
 artikel
72 Simulation of keV particle bombardment of covalent materials: An investigation of the yield dependence on incidence angle Smith, Roger
 1990
 46 1-4 p. 1-11
11 p.
 artikel
73 Sodium transport in β″-alumina crystals under argon ion bombardment Mariotto, G.
 1990
 46 1-4 p. 107-110
4 p.
 artikel
74 Sputtering yields of condensed rare gases Balaji, V.
 1990
 46 1-4 p. 435-440
6 p.
 artikel
75 Structure and bonding in ion irradiated polystyrene Foti, G.
 1990
 46 1-4 p. 306-308
3 p.
 artikel
76 Superconducting and structural properties of Y-Ba-Cu oxide thin films prepared by ion beam mixing Hohmuth, K.
 1990
 46 1-4 p. 276-283
8 p.
 artikel
77 Surface modifications of crystalline Sio2 and Al2O3 induced by energetic heavy ions Jollet, F.
 1990
 46 1-4 p. 125-127
3 p.
 artikel
78 The amorphous-to-gamma transformation in ion implanted Al2O3 Sklad, P.S.
 1990
 46 1-4 p. 102-106
5 p.
 artikel
79 The displacement cascade in ceramic oxides Parkin, Don.M.
 1990
 46 1-4 p. 26-35
10 p.
 artikel
80 The effect of chromium implantation on the hardness, elastic modulus, and residual stress of Al2O3 O'Hern, M.E.
 1990
 46 1-4 p. 171-175
5 p.
 artikel
81 The hardness and elastic modulus of chromium-implanted silicon carbide McHargue, C.J.
 1990
 46 1-4 p. 185-188
4 p.
 artikel
82 The Hopping motion of the off-center self-trapped excitons in alkali halide crystals Chen, L.F.
 1990
 46 1-4 p. 216-219
4 p.
 artikel
83 The influence of ion bombardment on the adhesion of thin films to substrates Pawel, J.E.
 1990
 46 1-4 p. 392-396
5 p.
 artikel
84 The residual charge state of tin implanted into sapphire McHargue, C.J.
 1990
 46 1-4 p. 74-78
5 p.
 artikel
85 Thermal sputtering as a gas-dynamic process Kelly, Roger
 1990
 46 1-4 p. 441-447
7 p.
 artikel
86 Thermal stability and diffusion studies in the Au and Bi implanted AZ1350 photoresist Behar, M.
 1990
 46 1-4 p. 350-353
4 p.
 artikel
87 The role of electronic excitation in ion-induced erosion of frozen gases Noriaki, Matsunami
 1990
 46 1-4 p. 452-455
4 p.
 artikel
88 The role of self-trapped excitons in radiation-damage processes in insulators Katsumi, Tanimura
 1990
 46 1-4 p. 207-215
9 p.
 artikel
89 The stability of WC to ion bombardment Karioris, F.G.
 1990
 46 1-4 p. 176-179
4 p.
 artikel
90 The structure of Al2O3 implanted with iron at 77 K McHargue, C.J.
 1990
 46 1-4 p. 144-148
5 p.
 artikel
91 The structure of ion implanted ceramics McHargue, C.J.
 1990
 46 1-4 p. 79-88
10 p.
 artikel
92 Time resolved reflectivity measurements in Pb-implanted SrTiO3 McCallum, J.C.
 1990
 46 1-4 p. 98-101
4 p.
 artikel
                             92 gevonden resultaten
 
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