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                             78 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A kinetic lattice Monte-Carlo approach to the evolution of boron in silicon Strobel, M.
 2002
 186 1-4 p. 339-343
5 p.
 artikel
2 An enhanced approach to numerical modeling of heavily irradiated silicon devices Moscatelli, F.
 2002
 186 1-4 p. 171-175
5 p.
 artikel
3 An IR-reflectivity and X-ray diffraction study of high energy He-ion implantation-induced damage in 4H–SiC Declémy, A.
 2002
 186 1-4 p. 318-323
6 p.
 artikel
4 Anormal growth of cavities in MeV He implanted Si covered with a thin Al foil Delamare, R
 2002
 186 1-4 p. 324-328
5 p.
 artikel
5 Author index 2002
 186 1-4 p. 446-454
9 p.
 artikel
6 Bulk generation lifetime studies in semiconductor structures with nonuniform distribution of electrically active defects in silicon Popov, V.M.
 2002
 186 1-4 p. 88-93
6 p.
 artikel
7 Carrier lifetime and turn-off current control by electron irradiation of MCT Chernyavsky, E.V
 2002
 186 1-4 p. 157-160
4 p.
 artikel
8 Characterization of hydrophobic bonded silicon wafers Keskitalo, Niclas
 2002
 186 1-4 p. 66-70
5 p.
 artikel
9 Cobalt silicide formation inside surface defects of a silicon substrate Belousov, I
 2002
 186 1-4 p. 61-65
5 p.
 artikel
10 Co-implantation of hydrogen and helium for thermal stabilization of lifetime in power devices Ntsoenzok, E
 2002
 186 1-4 p. 371-374
4 p.
 artikel
11 Computer image analysis of shrinkage of isolated amorphous zones in semiconductors induced by electron beam Jenčič, I.
 2002
 186 1-4 p. 126-131
6 p.
 artikel
12 Contents 2002
 186 1-4 p. ix-xii
nvt p.
 artikel
13 Cryogenic investigations and modelling of inter-defect charge exchange in silicon particle detectors MacEvoy, B.C
 2002
 186 1-4 p. 138-143
6 p.
 artikel
14 Current status of models for transient phenomena in dopant diffusion and activation Pichler, P.
 2002
 186 1-4 p. 256-264
9 p.
 artikel
15 Defect assessment of irradiated STI diodes Ohyama, H.
 2002
 186 1-4 p. 424-428
5 p.
 artikel
16 Defect distributions in silicon implanted with low doses of MeV ions Hallén, Anders
 2002
 186 1-4 p. 344-348
5 p.
 artikel
17 Defect engineering in Czochralski silicon by electron irradiation at different temperatures Lindström, J.L
 2002
 186 1-4 p. 121-125
5 p.
 artikel
18 Defect engineering in III–V ternary alloys: Effects of strain and local charge on the formation of native deep defects Amore Bonapasta, A.
 2002
 186 1-4 p. 229-233
5 p.
 artikel
19 Defect generation in crystalline silicon irradiated with high energy particles Kuhnke, M.
 2002
 186 1-4 p. 144-151
8 p.
 artikel
20 Defects in carbon and oxygen implanted p-type silicon Pivac, B
 2002
 186 1-4 p. 355-359
5 p.
 artikel
21 Defects induced by high energy helium implantation in 4H–SiC Beaufort, M.F
 2002
 186 1-4 p. 218-222
5 p.
 artikel
22 Diffusion and clustering of supersaturated carbon in SiGeC layers under oxidation Napolitani, E
 2002
 186 1-4 p. 212-217
6 p.
 artikel
23 Distribution of defects and impurities in gallium arsenide wafers after surface gettering Gorelenok, A.T
 2002
 186 1-4 p. 240-245
6 p.
 artikel
24 DLTS and EPR study of defects in H implanted silicon Mikšić, V
 2002
 186 1-4 p. 36-40
5 p.
 artikel
25 DLTS and PL studies of proton radiation defects in tin-doped FZ silicon Simoen, E
 2002
 186 1-4 p. 19-23
5 p.
 artikel
26 Dopant behaviour and damage annealing in silicon implanted with 1 keV arsenic Whelan, S
 2002
 186 1-4 p. 271-275
5 p.
 artikel
27 Dose-rate influence on the defect production in MeV proton-implanted float-zone and epitaxial n-type silicon Lévêque, P
 2002
 186 1-4 p. 375-379
5 p.
 artikel
28 Editorial Privitera, Vittorio
 2002
 186 1-4 p. vii-
1 p.
 artikel
29 Effect of nitrogen segregation on TED and loss of phosphorus in CZ-Si Fujiwara, N
 2002
 186 1-4 p. 313-317
5 p.
 artikel
30 Effect of rapid thermal annealing on oxide precipitation behavior in silicon crystal Akatsuka, M
 2002
 186 1-4 p. 46-54
9 p.
 artikel
31 Effect of the Ge preamorphization dose on boron diffusion and defect evolution in silicon Colombeau, B.
 2002
 186 1-4 p. 276-280
5 p.
 artikel
32 Electron paramagnetic resonance study of proton implantation induced defects in monocrystalline 4H– and 6H–SiC von Bardeleben, H.J
 2002
 186 1-4 p. 201-205
5 p.
 artikel
33 Engineering the diffusion behavior of dopants (B,Sb) in silicon by incorporation of carbon Lavéant, P
 2002
 186 1-4 p. 292-297
6 p.
 artikel
34 EPR studies of neutron-irradiated n-type FZ silicon doped with tin Mitrikas, G
 2002
 186 1-4 p. 181-185
5 p.
 artikel
35 57Fe Mössbauer study of radiation damage in ion-implanted Si, SiGe and SiSn Gunnlaugsson, H.P
 2002
 186 1-4 p. 55-60
6 p.
 artikel
36 Flash lamp annealing with millisecond pulses for ultra-shallow boron profiles in silicon Gebel, T
 2002
 186 1-4 p. 287-291
5 p.
 artikel
37 Formation and annealing of periodically arranged amorphous SiC x nanoclusters in silicon Lindner, J.K.N
 2002
 186 1-4 p. 206-211
6 p.
 artikel
38 Formation of electrically active defects in neutron irradiated silicon Kaminski, P
 2002
 186 1-4 p. 152-156
5 p.
 artikel
39 Formation of luminescent structures on Cz-silicon by hydrogen plasma treatments and oxidation Job, R
 2002
 186 1-4 p. 132-137
6 p.
 artikel
40 Future technology for advanced MOS devices Wyon, C
 2002
 186 1-4 p. 380-391
12 p.
 artikel
41 Generation of defects induced by MeV proton implantation in silicon – Influence of nuclear losses David, M.-L
 2002
 186 1-4 p. 309-312
4 p.
 artikel
42 Helium implantation defects in SiC studied by thermal helium desorption spectrometry Oliviero, E
 2002
 186 1-4 p. 223-228
6 p.
 artikel
43 High resolution Laplace DLTS studies of defects in ion-implanted silicon Evans-Freeman, J.H
 2002
 186 1-4 p. 41-45
5 p.
 artikel
44 Hydrogen enhanced thermal donor formation in oxygen enriched high resistive float-zone silicon Job, R
 2002
 186 1-4 p. 116-120
5 p.
 artikel
45 Impact of fast-neutron irradiation on the silicon p–n junction leakage and role of the diffusion reverse current Czerwinski, A.
 2002
 186 1-4 p. 166-170
5 p.
 artikel
46 Influence of fluorine on the simulation of the transient enhanced diffusion of 15 keV BF2 + ion implantation into silicon Dusch, A
 2002
 186 1-4 p. 360-365
6 p.
 artikel
47 Interaction between point defects in the Si–SiO2 system during the process of its formation Kropman, D
 2002
 186 1-4 p. 78-82
5 p.
 artikel
48 Interactions of primary defects with impurities in silicon Mukashev, B.N.
 2002
 186 1-4 p. 83-87
5 p.
 artikel
49 Ion implantation of silicon carbide Hallén, A
 2002
 186 1-4 p. 186-194
9 p.
 artikel
50 γ-irradiation hardness of short-channel nMOSFETs fabricated in a 0.5 μm SOI technology Claeys, C
 2002
 186 1-4 p. 429-434
6 p.
 artikel
51 Issues on boron electrical activation in silicon: Experiments on boron clusters and shallow junctions formation Mannino, Giovanni
 2002
 186 1-4 p. 246-255
10 p.
 artikel
52 Modeling of the Ostwald ripening of extrinsic defects and transient enhanced diffusion in silicon Claverie, A
 2002
 186 1-4 p. 281-286
6 p.
 artikel
53 New results for a novel oxygenated silicon material Da Via', C
 2002
 186 1-4 p. 111-115
5 p.
 artikel
54 Non-equilibrium impurity redistribution in Si Buzynin, A.N
 2002
 186 1-4 p. 366-370
5 p.
 artikel
55 On-line DLTS investigations of the mono- and di-vacancy in p-type silicon after low temperature electron irradiation Zangenberg, Nikolaj
 2002
 186 1-4 p. 71-77
7 p.
 artikel
56 Optical studies of ion-implantation centres in silicon Davies, Gordon
 2002
 186 1-4 p. 1-9
9 p.
 artikel
57 Optimum lifetime structuring in silicon power diodes by means of various irradiation techniques Hazdra, P.
 2002
 186 1-4 p. 414-418
5 p.
 artikel
58 Photo-dissociation of hydrogen passivated dopants in gallium arsenide Tong, L
 2002
 186 1-4 p. 234-239
6 p.
 artikel
59 Porous silicon-based passivation and gettering in polycrystalline silicon solar cells Dimassi, W
 2002
 186 1-4 p. 441-445
5 p.
 artikel
60 Positron beam and Raman analysis of hydrogen plasma treated and annealed Cz-Si Schut, H
 2002
 186 1-4 p. 94-99
6 p.
 artikel
61 Prevention of impurity gettering in the R P/2 region of ion-implanted silicon by defect engineering Kögler, R.
 2002
 186 1-4 p. 298-302
5 p.
 artikel
62 Radiation damage in flash memory cells Claeys, C.
 2002
 186 1-4 p. 392-400
9 p.
 artikel
63 Radiation damage of polycrystalline silicon films Ohyama, H.
 2002
 186 1-4 p. 176-180
5 p.
 artikel
64 Radiation effect on n-MOSFETs fabricated in a BiCMOS process Ohyama, H
 2002
 186 1-4 p. 419-423
5 p.
 artikel
65 Radiation effects on the current–voltage and capacitance–voltage characteristics of advanced p–n junction diodes surrounded by shallow trench isolation Poyai, A.
 2002
 186 1-4 p. 409-413
5 p.
 artikel
66 Raman and photoluminescence investigations of the H+ ion implanted silicon-on-insulator structure formed by hydrogen ion cut Tyschenko, I.E
 2002
 186 1-4 p. 329-333
5 p.
 artikel
67 Relation between microscopic defects and macroscopic changes in silicon detector properties after hadron irradiation Moll, M
 2002
 186 1-4 p. 100-110
11 p.
 artikel
68 Reversible and irreversible reaction fronts in two competing reactions system Sinder, M
 2002
 186 1-4 p. 161-165
5 p.
 artikel
69 Room temperature defect diffusion in ion implanted c-Si Libertino, Sebania
 2002
 186 1-4 p. 265-270
6 p.
 artikel
70 Self-interstitial clusters in silicon Jones, R.
 2002
 186 1-4 p. 10-18
9 p.
 artikel
71 Separation of vacancy and interstitial depth profiles in proton- and boron-implanted silicon Pellegrino, P
 2002
 186 1-4 p. 334-338
5 p.
 artikel
72 Some aspects of blistering and exfoliation of helium–hydrogen coimplanted (100) silicon Corni, F
 2002
 186 1-4 p. 349-354
6 p.
 artikel
73 Structure of tin–vacancy defects in silicon Kaukonen, M
 2002
 186 1-4 p. 24-29
6 p.
 artikel
74 TCAD calibration of USJ profiles for advanced deep sub-μm CMOS processes Zechner, C
 2002
 186 1-4 p. 303-308
6 p.
 artikel
75 The di-vacancy in particle-irradiated, strain-relaxed SiGe av Skardi, H
 2002
 186 1-4 p. 195-200
6 p.
 artikel
76 Time domain and frequency analysis of RTS noise in deep submicron SiGe HBTs Raoult, J
 2002
 186 1-4 p. 435-440
6 p.
 artikel
77 Time domain measurement of spin-dependent recombination – A novel defect spectroscopy method Boehme, Christoph
 2002
 186 1-4 p. 30-35
6 p.
 artikel
78 Ultra-shallow junction formation by excimer laser annealing and low energy (<1 keV) B implantation: A two-dimensional analysis Fortunato, G.
 2002
 186 1-4 p. 401-408
8 p.
 artikel
                             78 gevonden resultaten
 
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