Digitale Bibliotheek
Sluiten Bladeren door artikelen uit een tijdschrift
 
Zoeken naar met titel:
ABCDEFGHIJKLMNOPQRSTUVWXYZ

     Tijdschrift beschrijving
       Alle jaargangen van het bijbehorende tijdschrift
         Alle afleveringen van het bijbehorende jaargang
                                       Alle artikelen van de bijbehorende aflevering
 
                             71 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Activation analysis of rapid thermally annealed Si and Mg co-implanted semi-insulating GaAs Lee, Chien-Chieh
 2001
 178 1-4 p. 265-268
4 p.
 artikel
2 Amorphization of GaN by ion implantation Liu, C
 2001
 178 1-4 p. 200-203
4 p.
 artikel
3 A multi-scale atomistic study of the interstitials agglomeration in crystalline Si La Magna, A.
 2001
 178 1-4 p. 154-159
6 p.
 artikel
4 Author index 2001
 178 1-4 p. 346-353
8 p.
 artikel
5 Buried ZnTe nanocrystallites in thermal SiO2 on silicon synthesized by high dose ion implantation Karl, H
 2001
 178 1-4 p. 126-130
5 p.
 artikel
6 Coherent amorphization of Ge/Si multilayers with ion beams Alves, E
 2001
 178 1-4 p. 279-282
4 p.
 artikel
7 Coherent precipitate formation and diffusion effects in Ge-implanted TiO2-single crystals Fromknecht, R.
 2001
 178 1-4 p. 97-100
4 p.
 artikel
8 Colloidal assemblies modified by ion irradiation Snoeks, E
 2001
 178 1-4 p. 62-68
7 p.
 artikel
9 Computer simulation of Ostwald ripening for ion beam synthesis of buried layers Pohl, T
 2001
 178 1-4 p. 135-137
3 p.
 artikel
10 Contents 2001
 178 1-4 p. ix-xii
nvt p.
 artikel
11 Correlation between distribution of nitrogen atoms implanted at high energy and high dose and nanohardness measurements into 316L stainless steel Pelletier, H
 2001
 178 1-4 p. 319-322
4 p.
 artikel
12 Crystallization effects and diamond formation in amorphous carbon films under low energy ion beam irradiation Patsalas, P
 2001
 178 1-4 p. 247-251
5 p.
 artikel
13 Dose rate and temperature dependence of Ge range profiles in Si obtained by channeling implantation Posselt, M
 2001
 178 1-4 p. 170-175
6 p.
 artikel
14 Dwell-time dependence of irradiation damage in silicon Bischoff, L
 2001
 178 1-4 p. 165-169
5 p.
 artikel
15 Dynamics of pattern formation during low-energy ion bombardment of Si(001) Chason, Eric
 2001
 178 1-4 p. 55-61
7 p.
 artikel
16 Editorial Bernas, Harry
 2001
 178 1-4 p. vii-
1 p.
 artikel
17 Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films Normand, P
 2001
 178 1-4 p. 74-77
4 p.
 artikel
18 Formation of supported nanoparticles from island thin films during ion etching Pászti, Z
 2001
 178 1-4 p. 131-134
4 p.
 artikel
19 Heavy ion induced intermixing of metal/SiC interfaces Nagel, R
 2001
 178 1-4 p. 315-318
4 p.
 artikel
20 Heavy ion irradiation induced effects in Ni3N/Al bilayers Dhar, S.
 2001
 178 1-4 p. 297-300
4 p.
 artikel
21 He++-irradiated beryllium-doped Al0.5Ga0.5As MBE layers Szatkowski, J
 2001
 178 1-4 p. 252-255
4 p.
 artikel
22 High Fe solubility in InP by high temperature ion implantation Fraboni, B
 2001
 178 1-4 p. 275-278
4 p.
 artikel
23 High fluence ion beam modification of polymer surfaces: EPR and XPS studies Popok, V.N
 2001
 178 1-4 p. 305-310
6 p.
 artikel
24 Indium-tin-oxide thin film deposited by a dual ion beam assisted e-beam evaporation system Bae, J.W
 2001
 178 1-4 p. 311-314
4 p.
 artikel
25 Influence of annealing atmosphere on metal and metal alloy nanoclusters produced by ion implantation in silica Battaglin, G
 2001
 178 1-4 p. 176-179
4 p.
 artikel
26 Influence of boron concentration on the enhanced diffusion observed after irradiation of boron delta-doped silicon at 570°C Lévêque, P
 2001
 178 1-4 p. 337-341
5 p.
 artikel
27 Influence of ion energy on titanium oxide formation by vacuum arc deposition and implantation Mändl, S
 2001
 178 1-4 p. 148-153
6 p.
 artikel
28 Influence of the annealing ambient on the relative thermal stability of dislocation loops in silicon Cristiano, F
 2001
 178 1-4 p. 84-88
5 p.
 artikel
29 Interaction of defects and metals with nanocavities in silicon Williams, J.S
 2001
 178 1-4 p. 33-43
11 p.
 artikel
30 Interface stability and self-organization of precipitates under irradiation Bellon, P.
 2001
 178 1-4 p. 1-6
6 p.
 artikel
31 Investigation of the influence of a dislocation loop layer on interstitial kinetics during surface oxidation of silicon Tsoukalas, D
 2001
 178 1-4 p. 180-183
4 p.
 artikel
32 Ion beam doping and epitaxial regrowth of α-quartz Roccaforte, F
 2001
 178 1-4 p. 237-241
5 p.
 artikel
33 Ion beam induced preferential removal of oxygen from vanadium hydrates Bondarenka, V.
 2001
 178 1-4 p. 323-326
4 p.
 artikel
34 Ion beam induced solid state reaction in Si/C layer systems Harbsmeier, F.
 2001
 178 1-4 p. 214-219
6 p.
 artikel
35 Ion beam modification of thermal stress resistance of MgO single crystals with different crystallographic faces Gurarie, V.N
 2001
 178 1-4 p. 138-143
6 p.
 artikel
36 Ion beam synthesis of buried SiC layers in silicon: Basic physical processes Lindner, Jörg K.N.
 2001
 178 1-4 p. 44-54
11 p.
 artikel
37 Ion beam synthesis of CoSi2: Influence of surface kinetics on nucleation Volkov, A.E.
 2001
 178 1-4 p. 327-330
4 p.
 artikel
38 Ion implantation and thermal annealing in silicon carbide and gallium nitride Jiang, W
 2001
 178 1-4 p. 204-208
5 p.
 artikel
39 Ion irradiation induced solute clustering in steel: A 3D nanoanalysis with the tomographic atom-probe Pareige, P
 2001
 178 1-4 p. 233-236
4 p.
 artikel
40 Ion irradiation of gold inclusions in SiO2: Experimental evidence for inverse Ostwald ripening Rizza, G.C.
 2001
 178 1-4 p. 78-83
6 p.
 artikel
41 Irradiation-induced amorphization and growth of dodecagonal phase in an immiscible Co–Cu system Li, Z.F.
 2001
 178 1-4 p. 224-228
5 p.
 artikel
42 Kinetic aspects of the growth of platelets and voids in H implanted Si Grisolia, J.
 2001
 178 1-4 p. 160-164
5 p.
 artikel
43 Kinetic study of group IV nanoparticles ion beam synthesized in SiO2 Bonafos, C.
 2001
 178 1-4 p. 17-24
8 p.
 artikel
44 Laser annealing of sapphire with implanted copper nanoparticles Stepanov, A.L
 2001
 178 1-4 p. 120-125
6 p.
 artikel
45 Lateral gettering of iron and platinum by cavities induced by helium implantation in silicon Roqueta, F
 2001
 178 1-4 p. 184-187
4 p.
 artikel
46 Low energy ion implantation and high energy heavy ion irradiation in C60 films Narayanan, K.L.
 2001
 178 1-4 p. 301-304
4 p.
 artikel
47 MeV gold irradiation induced damage in α-quartz: Competition between nuclear and electronic stopping Toulemonde, M.
 2001
 178 1-4 p. 331-336
6 p.
 artikel
48 Model for efficient visible emission from Si nanocrystals ion beam synthesized in SiO2 López, M
 2001
 178 1-4 p. 89-92
4 p.
 artikel
49 Modeling of hydrogen passivation process of silicon for solar cells applications Kuznicki, Z.T
 2001
 178 1-4 p. 196-199
4 p.
 artikel
50 Monte Carlo simulations of masked ion beam irradiation damage profiles in YBa2Cu3O7−δ thin films Peng, Nianhua
 2001
 178 1-4 p. 242-246
5 p.
 artikel
51 Nanocomposites formed by ion implantation: Recent developments and future opportunities Meldrum, A
 2001
 178 1-4 p. 7-16
10 p.
 artikel
52 Ordered quantum dot formation on GaSb surfaces during ion sputtering Bobek, T
 2001
 178 1-4 p. 101-104
4 p.
 artikel
53 Oxidation of Ge implanted into SiO2 layers: Modeling and XPS Borodin, V.A
 2001
 178 1-4 p. 115-119
5 p.
 artikel
54 Oxygen behaviour during PIII-nitriding of aluminium Manova, D.
 2001
 178 1-4 p. 291-296
6 p.
 artikel
55 Point defect diffusion and clustering in ion implanted c-Si Libertino, Sebania
 2001
 178 1-4 p. 25-32
8 p.
 artikel
56 Positron implantation depth profiles in α-irradiated 18 carats gold Thomé, T
 2001
 178 1-4 p. 342-345
4 p.
 artikel
57 Shape evolution of oxidized silicon V-grooves during high dose ion implantation Müller, T.
 2001
 178 1-4 p. 109-114
6 p.
 artikel
58 Sn nanoclusters formed in thermally grown SiO2 studied by Mössbauer spectroscopy Koops, G.E.J
 2001
 178 1-4 p. 93-96
4 p.
 artikel
59 Structural and magnetic studies of CoCu granular alloy obtained by ion implantation of Co into a Cu matrix Errahmani, H
 2001
 178 1-4 p. 69-73
5 p.
 artikel
60 Structural modifications in amorphous Ge produced by ion implantation Desnica-Franković, I.D.
 2001
 178 1-4 p. 192-195
4 p.
 artikel
61 Structure and magnetic properties of Co+-implanted silica Cı́ntora-González, O
 2001
 178 1-4 p. 144-147
4 p.
 artikel
62 Synthesis of buried metal oxide films by high fluence oxygen ion implantation into metals Hammerl, C
 2001
 178 1-4 p. 220-223
4 p.
 artikel
63 Synthesis of cobalt silicide on porous silicon by high dose ion implantation Ramos, A.R.
 2001
 178 1-4 p. 283-286
4 p.
 artikel
64 Synthesizing single-phase β-FeSi2 via ion beam irradiations of Fe/Si bilayers Milosavljevic, M.
 2001
 178 1-4 p. 229-232
4 p.
 artikel
65 The behaviour of deuterium incorporated into the buried oxide of SIMOX Rivera, A
 2001
 178 1-4 p. 287-290
4 p.
 artikel
66 The Dresden EBIT: An ion source for materials research and technological applications of low-energy highly charged ions Werner, T.
 2001
 178 1-4 p. 260-264
5 p.
 artikel
67 The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaN Kucheyev, S.O
 2001
 178 1-4 p. 209-213
5 p.
 artikel
68 The evolution of point defects in semiconductors studied using the decay of implanted radioactive isotopes Henry, M.O
 2001
 178 1-4 p. 256-259
4 p.
 artikel
69 Theoretical and experimental investigations of defect evolution in silicon carbide during N+ and Al+ ion implantation taking into account internal stress fields Rybin, P.V.
 2001
 178 1-4 p. 269-274
6 p.
 artikel
70 Three-dimensional kinetic lattice Monte-Carlo simulation of ion erosion of fcc(111) surfaces Strobel, M.
 2001
 178 1-4 p. 105-108
4 p.
 artikel
71 Trapping of aluminium by dislocation loops in Si Ortiz, Ch
 2001
 178 1-4 p. 188-191
4 p.
 artikel
                             71 gevonden resultaten
 
 Koninklijke Bibliotheek - Nationale Bibliotheek van Nederland