| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Effect of MeV O2+ implantation on the reactive ion etch rate of LiTaO3
|
Leech, Patrick W
|
|
1999
|
159 |
3 |
p. 187-190
4 p.
|
artikel
|
| 2 |
Erratum to: “Proton elastic scattering cross-section on carbon from 350 keV to 3 MeV” [Nucl. Instr. and Meth. B 136–138 (1998) 86–90]
|
Mazzoni, S.
|
|
1999
|
159 |
3 |
p. 191-
1 p.
|
artikel
|
| 3 |
High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si
|
Zhang, Yanwen
|
|
1999
|
159 |
3 |
p. 133-141
9 p.
|
artikel
|
| 4 |
High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si
|
Zhang, Yanwen
|
|
1999
|
159 |
3 |
p. 158-165
8 p.
|
artikel
|
| 5 |
High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si
|
Zhang, Yanwen
|
|
1999
|
159 |
3 |
p. 142-157
16 p.
|
artikel
|
| 6 |
Non-equilibrium properties of GaAs interatomic potentials
|
Nordlund, K
|
|
1999
|
159 |
3 |
p. 183-186
4 p.
|
artikel
|
| 7 |
Radiation effects on some physical and thermal properties of V2O5–P2O5 glasses
|
Ezz-Eldin, F.M
|
|
1999
|
159 |
3 |
p. 166-175
10 p.
|
artikel
|
| 8 |
Separation of proton-induced fission isotopes from dominant evaporation residues by adapted target stacking
|
Beijers, J.P.M
|
|
1999
|
159 |
3 |
p. 176-182
7 p.
|
artikel
|
| 9 |
Stopping powers of Al and Mo for protons from 0.3 to 3.0 MeV
|
Shiomi-Tsuda, N
|
|
1999
|
159 |
3 |
p. 123-132
10 p.
|
artikel
|
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