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                             214 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Acceptor profile control in GaAs using co-implantation of Zn and P Hutchinson, S
 1999
 148 1-4 p. 459-462
4 p.
 artikel
2 Activation energies for light ions in ion beam induced epitaxial crystallization Kinomura, A
 1999
 148 1-4 p. 370-374
5 p.
 artikel
3 Activation energy spectra for annealing of ion irradiation induced defects in silica glasses van Dillen, T.
 1999
 148 1-4 p. 221-226
6 p.
 artikel
4 A lattice kinetic Monte Carlo code for the description of vacancy diffusion and self-organization in Si Magna, A.La
 1999
 148 1-4 p. 262-267
6 p.
 artikel
5 Amorphization and recrystallization of covalent tetrahedral networks Bolse, Wolfgang
 1999
 148 1-4 p. 83-92
10 p.
 artikel
6 Amorphization of metal films by low temperature ion irradiation. An in situ PAC-study for AuIn2 and In3Pd films Plewnia, A
 1999
 148 1-4 p. 901-906
6 p.
 artikel
7 Amorphization of Si(001) by ultra low energy (0.5–5 keV) ion implantation observed with high-resolution RBS Kimura, K
 1999
 148 1-4 p. 284-288
5 p.
 artikel
8 An advanced apparatus for ion beam assisted sputter coating of the inner walls of tubes Kraus, T
 1999
 148 1-4 p. 912-916
5 p.
 artikel
9 Atomic-level characterisation of ion-induced amorphisation in compound semiconductors Ridgway, M.C
 1999
 148 1-4 p. 391-395
5 p.
 artikel
10 Atomic mixing induced by swift heavy ion irradiation of Fe/Zr multilayers Jaouen, C
 1999
 148 1-4 p. 176-183
8 p.
 artikel
11 Behavior of implanted nitrogen in Zr/carbon bilayer Miyagawa, Y
 1999
 148 1-4 p. 863-867
5 p.
 artikel
12 Binary collision approximation modeling of ion-induced damage effects in crystalline 6H–SiC Lulli, G
 1999
 148 1-4 p. 573-577
5 p.
 artikel
13 Blue electroluminescence from high dose Si+ implantation in SiO2 Muller, D
 1999
 148 1-4 p. 997-1001
5 p.
 artikel
14 Boron diffusion in Si and SiC during 2.5 MeV proton irradiation at 500–850°C Kuznetsov, A.Yu.
 1999
 148 1-4 p. 279-283
5 p.
 artikel
15 Boundary conditions for formation of Er–O optical centers in Er- and O-coimplanted Si Nakashima, Kenshiro
 1999
 148 1-4 p. 517-522
6 p.
 artikel
16 Bulk unipolar diodes formed in GaAs by ion implantation Hutchinson, S
 1999
 148 1-4 p. 478-480
3 p.
 artikel
17 Can core/shell nanocrystals be formed by sequential ion implantation? Predictions from kinetic lattice Monte Carlo simulations Strobel, M
 1999
 148 1-4 p. 104-109
6 p.
 artikel
18 Carbon nanotubes produced by high energy (E > 100 MeV), heavy ion irradiation of graphite Biró, L.P
 1999
 148 1-4 p. 1102-1105
4 p.
 artikel
19 Cell adhesion on low-energy ion beam-irradiated polysiloxane surfaces Satriano, C
 1999
 148 1-4 p. 1079-1084
6 p.
 artikel
20 CEMS-investigations of AISI M2 steel after nitrogen plasma immersion ion implantation Uglov, V.V.
 1999
 148 1-4 p. 841-845
5 p.
 artikel
21 Ceramic surface modification by a keV ion irradiation Choi, W.K
 1999
 148 1-4 p. 740-744
5 p.
 artikel
22 Channeling ion beam induced crystalline quality improvement of epitaxial CeO2 films Yamamoto, Y
 1999
 148 1-4 p. 798-802
5 p.
 artikel
23 Characterization and giant magnetoresistance effect in cobalt–silver granular films formed by MEVVA implantation Wong, S.P.
 1999
 148 1-4 p. 813-818
6 p.
 artikel
24 Characterization of GaN synthesized in N-ion implanted GaAs Kuriyama, K
 1999
 148 1-4 p. 432-436
5 p.
 artikel
25 Characterization of Mg+-implanted InP by Raman spectroscopy Ibáñez, J
 1999
 148 1-4 p. 454-458
5 p.
 artikel
26 Characterization of silver colloids formed in LiBbO3 by Ag and O implantation at room and elevated temperatures Williams, E.K
 1999
 148 1-4 p. 1074-1078
5 p.
 artikel
27 Charge equilibration process for channeled He ions along the Si〈100〉 direction Azevedo, G.de M
 1999
 148 1-4 p. 168-171
4 p.
 artikel
28 Charge transfer induced critical deformation in ion beam amorphized metallic alloys Ossi, P.M.
 1999
 148 1-4 p. 189-193
5 p.
 artikel
29 CN molecular negative-ion beam deposition and ion energy dependence of atomic bonds between carbon and nitrogen in the films Tsuji, H
 1999
 148 1-4 p. 650-654
5 p.
 artikel
30 Coarsening of End-of-Range defects in ion-implanted silicon annealed in neutral and oxidizing ambients Giles, L.F
 1999
 148 1-4 p. 273-278
6 p.
 artikel
31 Comparison of beam-induced deposition using ion microprobe Park, Y.K
 1999
 148 1-4 p. 25-31
7 p.
 artikel
32 Comparison of nucleation and growth of the crystalline and amorphous phase during MeV-ion irradiation of amorphous/crystalline interfaces Glaser, E.
 1999
 148 1-4 p. 426-431
6 p.
 artikel
33 Crater formation on the surface of metals and alloys during high power ion beam processing Shulov, V.A.
 1999
 148 1-4 p. 154-158
5 p.
 artikel
34 Cratering in PMMA induced by gold ions: dependence on the projectile velocity Papaléo, R.M
 1999
 148 1-4 p. 126-131
6 p.
 artikel
35 Damage accumulation in Al2O3 during H2 + or He+ ion irradiation Sasajima, N
 1999
 148 1-4 p. 745-751
7 p.
 artikel
36 Damage evolution in TiC crystals during hydrogen and helium dual-ion beam irradiation Hojou, K
 1999
 148 1-4 p. 720-725
6 p.
 artikel
37 Damage formation and recovery in C+-irradiated 6H–SiC Jiang, W
 1999
 148 1-4 p. 562-566
5 p.
 artikel
38 Deep level properties of erbium implanted epitaxially grown SiGe Mamor, M
 1999
 148 1-4 p. 523-527
5 p.
 artikel
39 Defect clusters in high-energy ion-irradiated Ni and dilute Ni alloys investigated by diffuse X-ray scattering Yuya, Hideki
 1999
 148 1-4 p. 891-895
5 p.
 artikel
40 Defects formed during 1 MeV Si ion-irradiation of GeSi/Si strained-layer heterostructures at elevated temperatures Glasko, J.M
 1999
 148 1-4 p. 206-210
5 p.
 artikel
41 Dependence of optical properties of implanted silver nanoparticles in float glass on substrate temperature Hole, D.E.
 1999
 148 1-4 p. 1054-1058
5 p.
 artikel
42 Deposition of magnetic thin films by IBAD Šikola, T
 1999
 148 1-4 p. 907-911
5 p.
 artikel
43 Diffusion processes in metal/ceramic interfaces under heavy ion irradiation Nagel, R
 1999
 148 1-4 p. 930-935
6 p.
 artikel
44 Displacement energy measurements for ion-irradiated 6H–SiC Jiang, W
 1999
 148 1-4 p. 557-561
5 p.
 artikel
45 Distribution of gettering centres at a buried amorphous layer in silicon Kögler, R.
 1999
 148 1-4 p. 334-339
6 p.
 artikel
46 Dopant profile engineering of advanced Si MOSFET’s using ion implantation Stolk, P.A
 1999
 148 1-4 p. 242-246
5 p.
 artikel
47 Dwell-time effects in focused ion beam synthesis of cobalt disilicide: reflectivity measurements Hausmann, Stephan
 1999
 148 1-4 p. 610-614
5 p.
 artikel
48 Early stages of IBAD-film growth: Differences between (100) and polycrystalline Mo substrates van der Linden, Jacqueline C
 1999
 148 1-4 p. 98-103
6 p.
 artikel
49 Edge supported amorphous silicon membranes for diffraction studies Roorda, Sjoerd
 1999
 148 1-4 p. 360-365
6 p.
 artikel
50 Effect of Ar+, N2 +, He+ and H2 + bombardment on the composition and structure of CN x layers Bertóti, I
 1999
 148 1-4 p. 645-649
5 p.
 artikel
51 Effect of charge on ion–solid interaction at the surface of two-dimensional materials Takeuchi, T
 1999
 148 1-4 p. 132-136
5 p.
 artikel
52 Effect of crystal orientation on damage accumulation and post-implantation annealing for iron implantation into sapphire McHargue, Carl J
 1999
 148 1-4 p. 730-734
5 p.
 artikel
53 Effect of proton implantation on the photosensitivity of SMF-28 optical fiber Tchebotareva, A.L
 1999
 148 1-4 p. 687-691
5 p.
 artikel
54 Effects of crystal defects on the stopping powers for channeled ions in ion implanted single crystals Kótai, E
 1999
 148 1-4 p. 172-175
4 p.
 artikel
55 Effects of high energy nitrogen implantation on stainless steel microstructure Pelletier, H
 1999
 148 1-4 p. 824-829
6 p.
 artikel
56 Effects of H-implantation energy on the optical stability of implanted urushi films under photo-irradiation Awazu, K
 1999
 148 1-4 p. 1121-1125
5 p.
 artikel
57 Effects of ion beam irradiation on the crystallization of Si–C films Hishita, Shunichi
 1999
 148 1-4 p. 594-598
5 p.
 artikel
58 Effects of Ne- and Ar-ion irradiations on Ni/SiO2 bilayers Lieb, K.-P
 1999
 148 1-4 p. 951-956
6 p.
 artikel
59 Electrical behaviour of high energy 120Sn implantation in n- and p-type GaAs Narsale, A.M
 1999
 148 1-4 p. 421-425
5 p.
 artikel
60 Electrical characterization and annealing properties of electrically active defects introduced in n-Si during sputter etching in an Ar-plasma Deenapanray, P.N.K
 1999
 148 1-4 p. 300-305
6 p.
 artikel
61 Electrical characterization of low temperature He-ion irradiated GaN Hayes, M
 1999
 148 1-4 p. 437-440
4 p.
 artikel
62 Electron beam induced regrowth of ion implantation damage in Si and Ge Jenčič, I.
 1999
 148 1-4 p. 345-349
5 p.
 artikel
63 Electronic stopping power of 〈100〉 axial channeled 7 Li ions in Si crystals Dias, J.F
 1999
 148 1-4 p. 164-167
4 p.
 artikel
64 Emission kinetics of electron traps introduced in n-GaN during He-ion irradiation Auret, F.D
 1999
 148 1-4 p. 474-477
4 p.
 artikel
65 Energy transfer efficiency of the 1.54 μm luminescence of Er-implanted silicon in relation to post-implantation annealing and impurity coimplantation Kimura, T
 1999
 148 1-4 p. 486-491
6 p.
 artikel
66 Enhanced strain relaxation of epitaxial SiGe layers on Si(100) after H+ ion implantation Holländer, B
 1999
 148 1-4 p. 200-205
6 p.
 artikel
67 Enhancement of oxidation resistance in Cu and Cu(Al) thin layers Horváth, Z.E
 1999
 148 1-4 p. 868-871
4 p.
 artikel
68 Epitaxial ternary Er0.5Y0.5Si1.7 silicide layers formed by channeled ion beam synthesis Hogg, S.M
 1999
 148 1-4 p. 621-625
5 p.
 artikel
69 Er-related emission in nitrogen co-implanted Al X Ga1− X As:Er (X=0.15, 0.37, 0.70) Uekusa, S
 1999
 148 1-4 p. 502-506
5 p.
 artikel
70 Evaluation of raw hardness of DLC thin films prepared by IBAD Funada, Y
 1999
 148 1-4 p. 664-668
5 p.
 artikel
71 Factors determining energy values of ion beams for ion-beam deposition Sakudo, N
 1999
 148 1-4 p. 53-57
5 p.
 artikel
72 Formation, evolution and annihilation of interstitial clusters in ion implanted Si Libertino, Sebania
 1999
 148 1-4 p. 247-251
5 p.
 artikel
73 Formation of CdS and CdSe nanocrystals by sequential implantation White, C.W
 1999
 148 1-4 p. 991-996
6 p.
 artikel
74 Formation of coherent precipitates of platinum in sapphire Alves, E
 1999
 148 1-4 p. 1049-1053
5 p.
 artikel
75 Formation of crystalline SiC films by CH4 plasma immersion ion implantation into Si Volz, K
 1999
 148 1-4 p. 540-544
5 p.
 artikel
76 Growth of carbon thin film by low-energy mass-selected ion beam deposition Ohno, H
 1999
 148 1-4 p. 673-677
5 p.
 artikel
77 He+ implantation for waveguide fabrication in KTP and Rb:KTP Opfermann, Th
 1999
 148 1-4 p. 710-714
5 p.
 artikel
78 High current Ni-ion implantation to synthesize NiSi2 layers on Si with very low resistivity Gao, K.Y
 1999
 148 1-4 p. 615-620
6 p.
 artikel
79 High fluence boron implantation into polyimide Vacı́k, J.
 1999
 148 1-4 p. 1126-1130
5 p.
 artikel
80 Improvement of the high temperature oxidation resistance of Ti50Al via ion-implantation Hornauer, U
 1999
 148 1-4 p. 858-862
5 p.
 artikel
81 Improvement of the photorefractive response of Fe-doped KNbO3 crystals by MeV proton irradiation Fluck, D
 1999
 148 1-4 p. 678-682
5 p.
 artikel
82 Influence of beam parameters and low-energy electron neutralization on wafer charging during ion implantation Cacciato, A.
 1999
 148 1-4 p. 58-63
6 p.
 artikel
83 Influence of initial charge and charge state fluctuations on high-energy ion ranges and track formation Komarov, F.F.
 1999
 148 1-4 p. 159-163
5 p.
 artikel
84 Influence of substrate temperature on damage buildup and removal of ion implanted gallium nitride Liu, C
 1999
 148 1-4 p. 396-400
5 p.
 artikel
85 In situ RBS investigation of damage production during ion implantation in Al x Ga1− x As at 20 K Breeger, B
 1999
 148 1-4 p. 468-473
6 p.
 artikel
86 Internal stress reduction in diamond like carbon thin films by ion irradiation Lee, D.H
 1999
 148 1-4 p. 216-220
5 p.
 artikel
87 Ion beam assisted deposition of niobium nitride thin films for vacuum microelectronics devices Gotoh, Y
 1999
 148 1-4 p. 925-929
5 p.
 artikel
88 Ion beam effects on the formation of Ge and Si nanoclusters in silica thin films Carosella, C.A
 1999
 148 1-4 p. 975-979
5 p.
 artikel
89 Ion beam induced crystallization effect and growth kinetics of buried SiC layers formed by carbon implantation into silicon Chen, Dihu
 1999
 148 1-4 p. 589-593
5 p.
 artikel
90 Ion beam induced magnetic nanostructure patterning Bernas, H
 1999
 148 1-4 p. 872-879
8 p.
 artikel
91 Ion beam irradiation of relaxed amorphous silicon carbide Calcagno, L
 1999
 148 1-4 p. 583-588
6 p.
 artikel
92 Ion beam mixing of the ZrO2/Fe system Turos, A
 1999
 148 1-4 p. 778-782
5 p.
 artikel
93 Ion beam modification of PES, PS and PVC polymers Evelyn, A.L
 1999
 148 1-4 p. 1141-1145
5 p.
 artikel
94 Ion-beam modification of TiO2 film to multilayered photocatalyst Sumita, T
 1999
 148 1-4 p. 758-761
4 p.
 artikel
95 Ion beam processing of SiC for optical application Wesch, W.
 1999
 148 1-4 p. 545-550
6 p.
 artikel
96 Ion beam synthesis of Au and Cu nanoclusters in MgO Zimmerman, R.L
 1999
 148 1-4 p. 1064-1068
5 p.
 artikel
97 Ion beam synthesized cobalt germanide alloy by metal vapor vacuum arc implantation Lee, C.S
 1999
 148 1-4 p. 604-609
6 p.
 artikel
98 Ion implantation induced selective area exfoliation of InP and GaAs Simpson, T.W
 1999
 148 1-4 p. 381-385
5 p.
 artikel
99 Ion-implantation in SiC and GaN Papanicolaou, N
 1999
 148 1-4 p. 416-420
5 p.
 artikel
100 Ion implantation into the interior surface of a steel tube by plasma source ion implantation Baba, K
 1999
 148 1-4 p. 69-73
5 p.
 artikel
101 Ion-implanted hydrogen in gallium nitride Myers, S.M
 1999
 148 1-4 p. 386-390
5 p.
 artikel
102 Ion-induced erosion of organic self-assembled monolayers Cyganik, P
 1999
 148 1-4 p. 137-142
6 p.
 artikel
103 Ion irradiation-induced phase transformation of pyrochlore and zirconolite Wang, S.X
 1999
 148 1-4 p. 704-709
6 p.
 artikel
104 Ionised cluster beams as a hardness measurement tool Insepov, Z.
 1999
 148 1-4 p. 47-52
6 p.
 artikel
105 Laser annealing of implanted silicon with temperature-controlled transparency Bayazitov, R.M.
 1999
 148 1-4 p. 317-321
5 p.
 artikel
106 Lattice sites and damage annealing of Er in low-dose implanted GaAs Wahl, U
 1999
 148 1-4 p. 492-496
5 p.
 artikel
107 Light emission from ion beam induced silicon nanoclusters in silicon dioxide: role of cluster–cluster interactions via a thin oxide Shimizu-Iwayama, Tsutomu
 1999
 148 1-4 p. 980-985
6 p.
 artikel
108 Linear and nonlinear optical properties of Cu nanoparticles fabricated by high-current Cu− implantation in silica glass Takeda, Y
 1999
 148 1-4 p. 1029-1033
5 p.
 artikel
109 Linkage between crystallographic texture and surface roughness in niobium films synthesized by ion beam assisted deposition Ji, H
 1999
 148 1-4 p. 880-885
6 p.
 artikel
110 Low-energy cluster ion beam modification of surfaces Yamada, Isao
 1999
 148 1-4 p. 1-11
11 p.
 artikel
111 Low-energy focused Si ion beam deposition under oxygen atmosphere Yanagisawa, J
 1999
 148 1-4 p. 42-46
5 p.
 artikel
112 Low-energy ion assisted deposition of epitaxial gallium nitride films Gerlach, J.W
 1999
 148 1-4 p. 406-410
5 p.
 artikel
113 Low energy ion beam deposition with positive and negative ions – experiments to and modeling of subsurface growth Enders, B
 1999
 148 1-4 p. 143-148
6 p.
 artikel
114 Low temperature ion bombardment of Bi30Pd70-films – influence of the initial structure on the phase formation Durner, R
 1999
 148 1-4 p. 896-900
5 p.
 artikel
115 Low temperature relaxation in amorphous silicon made by ion implantation Roorda, Sjoerd
 1999
 148 1-4 p. 366-369
4 p.
 artikel
116 Low temperature transformations of defects in GaAs and AlGaAs Turos, A
 1999
 148 1-4 p. 401-405
5 p.
 artikel
117 Luminescence from Er and Tb implanted into MOS tunnel diodes Wang, S
 1999
 148 1-4 p. 481-485
5 p.
 artikel
118 Luminescence properties of Er implanted p-type and n-type 3C SiC/Si Awahara, K
 1999
 148 1-4 p. 507-511
5 p.
 artikel
119 Luminescence quenching in 150 keV proton irradiated a-SiC:H Reitano, R
 1999
 148 1-4 p. 578-582
5 p.
 artikel
120 MD simulations of ion beam induced epitaxial crystallization at a-Si/c-Si interfaces: interface structure and elementary processes of crystallization Weber, B
 1999
 148 1-4 p. 375-380
6 p.
 artikel
121 Measurement of lateral stress in argon implanted thin gold films using quartz resonator techniques Way, A.S
 1999
 148 1-4 p. 238-241
4 p.
 artikel
122 Mechanical properties of bismuth implanted amorphous Ge film Juhász, A
 1999
 148 1-4 p. 355-359
5 p.
 artikel
123 Mechanical properties of silicon oxynitride thin films prepared by low energy ion beam assisted deposition Shima, Yukari
 1999
 148 1-4 p. 599-603
5 p.
 artikel
124 Mechanical property changes of amorphous alumina induced by ion implantation Ikeyama, M
 1999
 148 1-4 p. 735-739
5 p.
 artikel
125 Mechanisms in the ion beam synthesis of SiC layers in silicon Lindner, J.K.N
 1999
 148 1-4 p. 528-533
6 p.
 artikel
126 Metal ion implantation and dynamic ion mixing for the protection of high-performance polymers from severe oxidative environment Iskanderova, Z.A
 1999
 148 1-4 p. 1090-1096
7 p.
 artikel
127 Micromachining using focused high energy ion beams: Deep Ion Beam Lithography van Kan, J.A
 1999
 148 1-4 p. 1085-1089
5 p.
 artikel
128 Microstructural evolution of oxygen implanted silicon during annealing processes Ishimaru , M.
 1999
 148 1-4 p. 311-316
6 p.
 artikel
129 Microstructure of sulfide nanocrystals formed by ion-implantation Meldrum, A
 1999
 148 1-4 p. 957-963
7 p.
 artikel
130 Modelling on plasma immersion implantation of trenches Keller, G
 1999
 148 1-4 p. 64-68
5 p.
 artikel
131 Modification of ALE-grown SrS thin films by ion implantation of Cu and codopants Sajavaara, T
 1999
 148 1-4 p. 715-719
5 p.
 artikel
132 Modification of alkanethiol self-assembled monolayers on Au by single-ion irradiation Ogiso, H
 1999
 148 1-4 p. 1097-1101
5 p.
 artikel
133 Nanocluster formation in silicate glasses by sequential ion implantation procedures Cattaruzza, E
 1999
 148 1-4 p. 1007-1011
5 p.
 artikel
134 Nano-indentation of ion-beam modified HfN/Si system: Identification of the amorphized inter-layer Nowak, R
 1999
 148 1-4 p. 110-115
6 p.
 artikel
135 Nanosized lead inclusions in silicon produced by ion implantation Johnson, E
 1999
 148 1-4 p. 1034-1038
5 p.
 artikel
136 Negative-ion beam surface modification of tissue-culture polystyrene dishes for changing hydrophilic and cell-attachment properties Tsuji, H
 1999
 148 1-4 p. 1136-1140
5 p.
 artikel
137 Network modification and epitaxial recrystallisation of ion-implanted α-quartz Roccaforte, F
 1999
 148 1-4 p. 692-697
6 p.
 artikel
138 New magnetic properties by ion beam mixing: Ag/Fe/Ag-(001)-films with tetragonal symmetry Kurowski, D
 1999
 148 1-4 p. 936-940
5 p.
 artikel
139 New techniques for optical absorption measurement of implanted nanoparticles in float glass Okur, I
 1999
 148 1-4 p. 1069-1073
5 p.
 artikel
140 N-ion implantation assisted by preparative and closing implantation for surface modification of tool steel Vilaithong, T
 1999
 148 1-4 p. 830-835
6 p.
 artikel
141 Nitrogen plasma immersion ion implantation into high speed steel Mändl, S
 1999
 148 1-4 p. 846-850
5 p.
 artikel
142 Nonlinear optical properties of semiconducting nanocrystals in fused silica Dowd, A
 1999
 148 1-4 p. 964-968
5 p.
 artikel
143 Observation of atomic processes in Xe nanocrystals embedded in Al under 1 MeV electron irradiation Mitsuishi, K
 1999
 148 1-4 p. 184-188
5 p.
 artikel
144 Optical absorption and thermoluminescence of MgAl2O4 spinel crystals implanted with Xe++ ions Afanasyev-Charkin, I.V
 1999
 148 1-4 p. 787-792
6 p.
 artikel
145 Optical and electrical doping of silicon with holmium Suyver, J.F
 1999
 148 1-4 p. 497-501
5 p.
 artikel
146 Optical and structural properties of chromium implanted lithium niobate – cluster formation and substitutional incorporation Kling, A
 1999
 148 1-4 p. 1044-1048
5 p.
 artikel
147 Optical rotation in a Bi4Ge3O12:RE surface modified by He-ion beam implantation Jazmati, A.K
 1999
 148 1-4 p. 698-703
6 p.
 artikel
148 Optimisation of TiN-IBAD coatings for wear reduction and corrosion protection Vera, E
 1999
 148 1-4 p. 917-924
8 p.
 artikel
149 Oxidation state and lattice site occupation of ions implanted into rutile Meyer, O
 1999
 148 1-4 p. 752-757
6 p.
 artikel
150 Oxygen implanted silicon investigated by positron annihilation spectroscopy Kruseman, A.C
 1999
 148 1-4 p. 294-299
6 p.
 artikel
151 Paramagnetic defects in modified carbon-containing semiconductors Azarko, I.I
 1999
 148 1-4 p. 1116-1120
5 p.
 artikel
152 Phase formation in silicon carbide, silicon, and glassy carbon after high-dose titanium implantation using a MEVVA ion source Lindner, J.K.N
 1999
 148 1-4 p. 551-556
6 p.
 artikel
153 Phase formation in titanium after high-fluence oxygen ion implantation Hammerl, C
 1999
 148 1-4 p. 851-857
7 p.
 artikel
154 Photoluminescence properties of thermal SiO2 films implanted by silicon and nitrogen ions Zhao, J
 1999
 148 1-4 p. 1002-1006
5 p.
 artikel
155 Physical sputtering of III–V-semiconductors with a focused Ga+-beam Menzel, R
 1999
 148 1-4 p. 450-453
4 p.
 artikel
156 Plasma synthesis of hard materials with energetic ions Monteiro, Othon R
 1999
 148 1-4 p. 12-16
5 p.
 artikel
157 Plastic flow produced by single ion impacts on metals Birtcher, R.C
 1999
 148 1-4 p. 194-199
6 p.
 artikel
158 Post-deposition relaxation of internal stress in sputter-grown HfN thin films bombarded with carbon ions Nowak, R
 1999
 148 1-4 p. 232-237
6 p.
 artikel
159 Post-implantation bombardment assisted formation of colloidal Au in silica Ila, D
 1999
 148 1-4 p. 1012-1016
5 p.
 artikel
160 Precipitation, ripening and chemical effects during annealing of Ge+ implanted SiO2 layers Heinig, K.H
 1999
 148 1-4 p. 969-974
6 p.
 artikel
161 Preparation of hydrophobic diamond like carbon films by plasma source ion implantation Hatada, R
 1999
 148 1-4 p. 655-658
4 p.
 artikel
162 Preparation of smooth Si(001) surfaces by glancing angle sputtering Kimura, Kenji
 1999
 148 1-4 p. 149-153
5 p.
 artikel
163 Preservation of polytypic structure in implanted 4H-SiC(1 1 00) Satoh, M
 1999
 148 1-4 p. 567-572
6 p.
 artikel
164 Processing of powder surfaces by ion beam techniques Ensinger, W.
 1999
 148 1-4 p. 17-24
8 p.
 artikel
165 Properties of metallic ions implanted into sapphire Kobayashi, Tomohiro
 1999
 148 1-4 p. 1059-1063
5 p.
 artikel
166 Proton irradiation of n-type GaAs Goodman, S.A.
 1999
 148 1-4 p. 446-449
4 p.
 artikel
167 Pulsed plasma beam mixing of Ti and Mo into Al2O3 substrates Piekoszewski, J
 1999
 148 1-4 p. 32-36
5 p.
 artikel
168 RBS and ERDA study of ion beam synthesised amorphous gallium nitride Barradas, N.P
 1999
 148 1-4 p. 463-467
5 p.
 artikel
169 Recoils, flows and explosions: surface damage mechanisms in metals and semiconductors during 50 eV–50 keV ion bombardment Nordlund, K.
 1999
 148 1-4 p. 74-82
9 p.
 artikel
170 Removal of vacancy type clusters by low energy ion generated self-interstitials in crystalline silicon Fedorov, A.V.
 1999
 148 1-4 p. 289-293
5 p.
 artikel
171 Residual stresses and ion implantation effects in Cr thin films Misra, A
 1999
 148 1-4 p. 211-215
5 p.
 artikel
172 Retention of iodine in yttria stabilized zirconia Pouchon, M.A
 1999
 148 1-4 p. 783-786
4 p.
 artikel
173 Reverse annealing effects in heavy ion implanted silicon Pellegrino, Paolo
 1999
 148 1-4 p. 306-310
5 p.
 artikel
174 Schottky barrier modification and electrical characterization of low energy He-ion bombardment induced defects in n- and p-type GaAs Legodi, M.J.
 1999
 148 1-4 p. 441-445
5 p.
 artikel
175 Self-assembled two-dimensional distribution of nanoparticles with high-current Cu− implantation into insulators Kishimoto, N
 1999
 148 1-4 p. 1017-1022
6 p.
 artikel
176 Self ion irradiated Si probed with enhanced depth resolution positron annihilation spectroscopy Knights, A.P
 1999
 148 1-4 p. 340-344
5 p.
 artikel
177 Self-organised wire growth using ion-implanted reservoirs Brongersma, S.H
 1999
 148 1-4 p. 93-97
5 p.
 artikel
178 Semi-insulating behaviour in Fe MeV implanted n-type InP Gasparotto, A
 1999
 148 1-4 p. 411-415
5 p.
 artikel
179 Sequential disordering during ion-induced amorphization in the Mo–Fe multilayered films Lin, C
 1999
 148 1-4 p. 946-950
5 p.
 artikel
180 Simulation of metallic impurity gettering in silicon by MeV ion implantation Brown, R.A.
 1999
 148 1-4 p. 322-328
7 p.
 artikel
181 Stability and diffusion of Hg implanted YBa2Cu3O6+ x Araújo, J.P
 1999
 148 1-4 p. 807-812
6 p.
 artikel
182 Structural analysis of Si/Fe and Mo/Fe ion-beam mixed layers Jagielski, J.
 1999
 148 1-4 p. 886-890
5 p.
 artikel
183 Structural and magnetic properties of Fe ion implanted Al2O3 Sakamoto, I
 1999
 148 1-4 p. 1039-1043
5 p.
 artikel
184 Structural changes in ultra-high-dose self-implanted crystalline and amorphous silicon Zhu, Xianfang
 1999
 148 1-4 p. 268-272
5 p.
 artikel
185 Structure evolution of implanted polymers: Buried conductive layer formation Popok, V.N
 1999
 148 1-4 p. 1106-1110
5 p.
 artikel
186 Study of micromechanical properties of ion-beam mixed layers Jagielski, J
 1999
 148 1-4 p. 941-945
5 p.
 artikel
187 Study of the influence of surface carbon on the tribological properties of ion-treated steels Benyagoub, Abdenacer
 1999
 148 1-4 p. 819-823
5 p.
 artikel
188 Surface modification of polyethylene by low keV ion beams Tóth, A.
 1999
 148 1-4 p. 1131-1135
5 p.
 artikel
189 Surface modification with ionised cluster beams: Modelling Insepov, Z
 1999
 148 1-4 p. 121-125
5 p.
 artikel
190 Surface treatment of diamond films with Ar and O2 cluster ion beams Toyoda, N
 1999
 148 1-4 p. 639-644
6 p.
 artikel
191 Synthesis of metal/polymer composite films by implantation of Fe and Ag ions in viscous and solid state silicone substrates Khaibullin, R.I
 1999
 148 1-4 p. 1023-1028
6 p.
 artikel
192 Synthesis of Ti:sapphire by ion implantation McCallum, J.C
 1999
 148 1-4 p. 726-729
4 p.
 artikel
193 Temperature dependence of ion-beam induced amorphization in α-quartz Dhar, Sankar
 1999
 148 1-4 p. 683-686
4 p.
 artikel
194 Textured CeO2 buffer layers on amorphous substrates by ion beam assisted deposition Huang, M.Q
 1999
 148 1-4 p. 793-797
5 p.
 artikel
195 The effect of fluence on the hardening of C60 films irradiated with He and N ions Foerster, C.E
 1999
 148 1-4 p. 634-638
5 p.
 artikel
196 The effect of ion dose and annealing ambient on room temperature photoluminescence from Si nanocrystals in SiO2 Cheylan, S
 1999
 148 1-4 p. 986-990
5 p.
 artikel
197 The effects of island diffusion and breakup in island growth during ion-beam assisted deposition Rusanen, M
 1999
 148 1-4 p. 116-120
5 p.
 artikel
198 The effects of the annealing temperature on the formation of helium-filled structures in silicon Fichtner, P.F.P
 1999
 148 1-4 p. 329-333
5 p.
 artikel
199 The Fe–N system: phase transformations induced by the concomitant use of heavy ion bombardment and temperature Moreira, E.C
 1999
 148 1-4 p. 836-840
5 p.
 artikel
200 The formation of microvoids in MgO by helium ion implantation and thermal annealing Veen, A.van
 1999
 148 1-4 p. 768-772
5 p.
 artikel
201 The influence of implantation and annealing conditions on optical activity of Er3+ ions in 6H SiC Kozanecki, A
 1999
 148 1-4 p. 512-516
5 p.
 artikel
202 The investigation of optical and electrical properties of N+-implanted amorphous diamond-like carbon (DLC) films Faizrakhmanov, I.A
 1999
 148 1-4 p. 669-672
4 p.
 artikel
203 The kinetics of dopant-enhanced solid phase epitaxy in H-free amorphous silicon layers McCallum, J.C
 1999
 148 1-4 p. 350-354
5 p.
 artikel
204 The nature of damage in ion-implanted and annealed diamond Kalish, R.
 1999
 148 1-4 p. 626-633
8 p.
 artikel
205 Thermal annealing, irradiation, and stress in multilayers Fayeulle, S.
 1999
 148 1-4 p. 227-231
5 p.
 artikel
206 Thermal fatigue of ion implanted magnesium oxide crystals Gurarie, V.N
 1999
 148 1-4 p. 773-777
5 p.
 artikel
207 Thermal stability of He irradiated photoresist films Garcia, Irene T.S
 1999
 148 1-4 p. 1111-1115
5 p.
 artikel
208 The role of Fe on the crystallisation of α-Si3N4 from amorphous Si–N formed by ion implantation Li, Z.L
 1999
 148 1-4 p. 534-539
6 p.
 artikel
209 Tin implanted in rutile single crystals: disorder, lattice location and the influence of the analyzing He-beam Khubeis, I
 1999
 148 1-4 p. 762-767
6 p.
 artikel
210 Titanium nitride coating on implanted layer using titanium plasma based ion implantation Sano, M
 1999
 148 1-4 p. 37-41
5 p.
 artikel
211 Transient enhanced diffusion in preamorphized silicon: the role of the surface Cowern, N.E.B
 1999
 148 1-4 p. 257-261
5 p.
 artikel
212 Tribological properties of nitrogen implanted diamond-like carbon Miyagawa, S
 1999
 148 1-4 p. 659-663
5 p.
 artikel
213 Very low energy nitrogen implantation for ultrathin silicon oxynitride film formation Salgado, T.D.M
 1999
 148 1-4 p. 252-256
5 p.
 artikel
214 YBa2Cu3O7− δ Josephson junctions fabricated by oxygen implantation Kahlmann, F
 1999
 148 1-4 p. 803-806
4 p.
 artikel
                             214 gevonden resultaten
 
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