| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An algorithm for Monte Carlo simulation of coupled electron-photon transport
|
Sempau, J.
|
|
1997
|
132 |
3 |
p. 377-390
14 p.
|
artikel
|
| 2 |
Analytical use of the multiple gamma-rays from the 12C(d,p)13C∗ nuclear reaction
|
Papillon, F.
|
|
1997
|
132 |
3 |
p. 468-480
13 p.
|
artikel
|
| 3 |
A study of single crystal zirconia implanted with platinum ions
|
Xie, Dong-zhu
|
|
1997
|
132 |
3 |
p. 425-429
5 p.
|
artikel
|
| 4 |
Beam bending using graded composition strained layers
|
Breese, M.B.H.
|
|
1997
|
132 |
3 |
p. 540-547
8 p.
|
artikel
|
| 5 |
Calendar
|
|
|
1997
|
132 |
3 |
p. 549-550
2 p.
|
artikel
|
| 6 |
Characterization of alpha sources prepared by direct evaporation using Rutherford backscattering spectrometry
|
Blanco Rodríguez, P.
|
|
1997
|
132 |
3 |
p. 501-506
6 p.
|
artikel
|
| 7 |
Correction and addendum to “The formation of clusters during large sputtering events” [Nucl. Instr. and Meth. B 124 (1997) 31]
|
Hartman, John W.
|
|
1997
|
132 |
3 |
p. 406-408
3 p.
|
artikel
|
| 8 |
Deep light ion lithography in PMMA — A parameter study
|
Schrempel, F.
|
|
1997
|
132 |
3 |
p. 430-438
9 p.
|
artikel
|
| 9 |
Defect levels of proton-irradiated silicon with a dose of 3.6 × 1013cm−2
|
Schmidt, D.C.
|
|
1997
|
132 |
3 |
p. 439-446
8 p.
|
artikel
|
| 10 |
Depth locating of elements by the PIXE technique
|
Lagarde, Gérard
|
|
1997
|
132 |
3 |
p. 521-527
7 p.
|
artikel
|
| 11 |
Depth profiling of a single crystal of YBCO superconductor using micro-PIXE technique
|
Ahmed, M.
|
|
1997
|
132 |
3 |
p. 507-512
6 p.
|
artikel
|
| 12 |
Determination of fluorine by low energy deuteron activation: Comparison with a prompt nuclear technique
|
Sastri, Chaturvedula S.
|
|
1997
|
132 |
3 |
p. 513-520
8 p.
|
artikel
|
| 13 |
Electron impact ionization cross section of Ar+, Kr+, In+ and Ge+
|
Gao Haibin,
|
|
1997
|
132 |
3 |
p. 364-370
7 p.
|
artikel
|
| 14 |
Enhanced emission of secondary ions from solid surfaces bombarded with MeV polyatomic ions
|
Tomaschko, Ch.
|
|
1997
|
132 |
3 |
p. 371-376
6 p.
|
artikel
|
| 15 |
Evidence of ionization annealing upon helium-ion irradiation of pre-damaged fluorapatite
|
Ouchani, S.
|
|
1997
|
132 |
3 |
p. 447-451
5 p.
|
artikel
|
| 16 |
Fluorescence efficiencies of thin scintillating films in the extreme ultraviolet spectral region
|
McKinsey, D.N.
|
|
1997
|
132 |
3 |
p. 351-358
8 p.
|
artikel
|
| 17 |
Focusing of hard X-rays with a W Si supermirror
|
Høghøj, Peter
|
|
1997
|
132 |
3 |
p. 528-533
6 p.
|
artikel
|
| 18 |
On line measurements of proton flux by high energy backscattering spectroscopy
|
Torrisi, L.
|
|
1997
|
132 |
3 |
p. 534-539
6 p.
|
artikel
|
| 19 |
Optical emissions from an aluminum surface by ion bombardment
|
Ching Shuang Lee,
|
|
1997
|
132 |
3 |
p. 391-394
4 p.
|
artikel
|
| 20 |
PIXE and PESA aspects of the Guelph Visibility and Fine Particulate Monitoring Program
|
Nejedlý, Z.
|
|
1997
|
132 |
3 |
p. 489-500
12 p.
|
artikel
|
| 21 |
PIXE and XRF comparison for applications to sediments analysis
|
Benyaïch, F.
|
|
1997
|
132 |
3 |
p. 481-488
8 p.
|
artikel
|
| 22 |
Pre-equilibrium charge state distributions of Ni26+ (74 MeV/u) in carbon foils
|
Rothard, H.
|
|
1997
|
132 |
3 |
p. 359-363
5 p.
|
artikel
|
| 23 |
Radiation induced recrystallisation and enhancement in photoluminescence from porous silicon
|
Bhave, Tejashree M.
|
|
1997
|
132 |
3 |
p. 409-417
9 p.
|
artikel
|
| 24 |
Single aliquot dating of ceramics by green light stimulation of luminescence from quartz
|
Liritzis, I.
|
|
1997
|
132 |
3 |
p. 457-467
11 p.
|
artikel
|
| 25 |
Target theory applied to swift heavy ions track grafting experiments
|
Mazzei, Ruben
|
|
1997
|
132 |
3 |
p. 452-456
5 p.
|
artikel
|
| 26 |
The influence of inner-shell electron promotion on charge exchange processes in low energy ion scattering from surfaces
|
Ting Li,
|
|
1997
|
132 |
3 |
p. 395-405
11 p.
|
artikel
|
| 27 |
Transmission electron microscopy investigation of the crystal-amorphous-polycrystal transition in silicon during bismuth room temperature ion implantation
|
Fauré, J.
|
|
1997
|
132 |
3 |
p. 418-424
7 p.
|
artikel
|
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