| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A compact wavelength-dispersive X-ray spectrometer for particle-induced X-ray emission analysis
|
Furukawa, Y.
|
|
1996
|
118 |
1-4 |
p. 372-376
5 p.
|
artikel
|
| 2 |
A high resolution magnetic spectrograph for ion beam analysis
|
Arnoldbik, W.M.
|
|
1996
|
118 |
1-4 |
p. 566-572
7 p.
|
artikel
|
| 3 |
Alpha-emission channeling investigations of the lattice location of Li in Ge
|
Wahl, U.
|
|
1996
|
118 |
1-4 |
p. 76-81
6 p.
|
artikel
|
| 4 |
Analysis of a thin, silicon-oxide, silicon-nitride multilayer target by time-of-flight medium energy backscattering
|
Weller, Robert A.
|
|
1996
|
118 |
1-4 |
p. 556-559
4 p.
|
artikel
|
| 5 |
Analysis of coated reflective glasses near the surface using IBA techniques
|
Pineda, J.C.
|
|
1996
|
118 |
1-4 |
p. 650-653
4 p.
|
artikel
|
| 6 |
Analysis of radiation-induced segregation in type 304 stainless steel by PIXE and RBS channeling
|
Kawatsura, K.
|
|
1996
|
118 |
1-4 |
p. 363-366
4 p.
|
artikel
|
| 7 |
Analysis of stoichiometry of high-T c superconducting films by RBS and PIXE methods
|
Šandrik, R.
|
|
1996
|
118 |
1-4 |
p. 602-607
6 p.
|
artikel
|
| 8 |
Analysis of strain in ultra-thin GaAs/In0.2Ga0.8As/GaAs single quantum well structures by channeling technique
|
Kozanecki, A.
|
|
1996
|
118 |
1-4 |
p. 640-644
5 p.
|
artikel
|
| 9 |
An attempt to make a buried layer of indium in aluminium by ion implantation
|
Kruse, N.
|
|
1996
|
118 |
1-4 |
p. 645-649
5 p.
|
artikel
|
| 10 |
An electrostatic filter for high resolution nuclear reaction analysis
|
Healy, M.
|
|
1996
|
118 |
1-4 |
p. 196-200
5 p.
|
artikel
|
| 11 |
Application of ion-beam-analysis techniques to the study of irradiation damage in zirconium alloys
|
Howe, L.M.
|
|
1996
|
118 |
1-4 |
p. 663-669
7 p.
|
artikel
|
| 12 |
Application of medium energy nuclear microprobe to semiconductor process steps
|
Takai, Mikio
|
|
1996
|
118 |
1-4 |
p. 418-422
5 p.
|
artikel
|
| 13 |
Application of 14N(3He, 4He) 13N nuclear reaction to nitrogen depth profiling in metals
|
Wielunski, L.S.
|
|
1996
|
118 |
1-4 |
p. 167-171
5 p.
|
artikel
|
| 14 |
Application of NRA/channeling to study He+ implanted waveguides
|
Williams, E.K.
|
|
1996
|
118 |
1-4 |
p. 57-61
5 p.
|
artikel
|
| 15 |
Author index
|
|
|
1996
|
118 |
1-4 |
p. 787-801
15 p.
|
artikel
|
| 16 |
Backscattering analysis of thin SiO2 films on Si using 16O(α,α)16O 3.045 MeV resonance
|
Watamori, Michio
|
|
1996
|
118 |
1-4 |
p. 228-232
5 p.
|
artikel
|
| 17 |
Backscattering spectroscopy developments for the University of Oxford Scanning External Proton Milliprobe (SEPM)
|
Jarjis, R.A.
|
|
1996
|
118 |
1-4 |
p. 62-71
10 p.
|
artikel
|
| 18 |
Backscattering studies of 7Li, 12C and 16O ions at energies 3–15 MeV
|
Cheng, H.S.
|
|
1996
|
118 |
1-4 |
p. 408-413
6 p.
|
artikel
|
| 19 |
Channeled ion assisted epitaxial growth of Ge on thin Si substrates
|
Saitoh, Kazuo
|
|
1996
|
118 |
1-4 |
p. 718-723
6 p.
|
artikel
|
| 20 |
Channeling analyses of epitaxially grown YB2C3O7−x thin film
|
Qu, J.Z.
|
|
1996
|
118 |
1-4 |
p. 684-687
4 p.
|
artikel
|
| 21 |
Channeling analysis of oxygen in oxide materials using 16O(α, α)16O resonant backscattering
|
Watamori, Michio
|
|
1996
|
118 |
1-4 |
p. 233-237
5 p.
|
artikel
|
| 22 |
Channeling experiments on porous silicon before and after implantation
|
Battistig, G.
|
|
1996
|
118 |
1-4 |
p. 654-658
5 p.
|
artikel
|
| 23 |
Channeling-like effects due to the macroscopic structure of porous silicon
|
Hajnal, Z.
|
|
1996
|
118 |
1-4 |
p. 617-621
5 p.
|
artikel
|
| 24 |
Channeling studies of YBaCuO thin films with combined RBS and PIXE
|
Ecker, K.H.
|
|
1996
|
118 |
1-4 |
p. 382-387
6 p.
|
artikel
|
| 25 |
Channeling study of melting and solidification of lead nanocrystals in aluminium
|
Bourdelle, K.K.
|
|
1996
|
118 |
1-4 |
p. 478-482
5 p.
|
artikel
|
| 26 |
Characterization of BiSrCaCuO thin films by the complementary use of IBA and AES analytical techniques
|
Climent-Font, A.
|
|
1996
|
118 |
1-4 |
p. 108-112
5 p.
|
artikel
|
| 27 |
Characterization of carbon in heteroepitaxial Si1 − x − y Ge xCy thin films via combined ion channeling and nuclear resonance analysis
|
Hearne, S.
|
|
1996
|
118 |
1-4 |
p. 88-96
9 p.
|
artikel
|
| 28 |
Characterization of the recovery and recrystallization of SrTiO3 surface by ion channeling
|
Wang, F.
|
|
1996
|
118 |
1-4 |
p. 547-551
5 p.
|
artikel
|
| 29 |
Chemical diagenesis in fossil shells from Baja California, México studied using PIXE and mass spectrometry
|
Oliver, A.
|
|
1996
|
118 |
1-4 |
p. 414-417
4 p.
|
artikel
|
| 30 |
Coaxial impact collision ion scattering spectroscopy studies of Sb adsorption on the two-domain (100) surface of silicon
|
Noakes, T.C.Q.
|
|
1996
|
118 |
1-4 |
p. 462-466
5 p.
|
artikel
|
| 31 |
Committees and sponsors
|
|
|
1996
|
118 |
1-4 |
p. viii-
1 p.
|
artikel
|
| 32 |
Comparison of elastic resonance and elastic recoil detection in the quantification of carbon in SiGeC
|
Bair, A.E.
|
|
1996
|
118 |
1-4 |
p. 274-277
4 p.
|
artikel
|
| 33 |
Compensation for the energy spread of a Van de Graaff accelerator by using two time-of-flight systems
|
Bergsmann, M.
|
|
1996
|
118 |
1-4 |
p. 593-595
3 p.
|
artikel
|
| 34 |
Composition analysis of ECR-grown SiO2 and SiO x F y films
|
Burkhart, J.H.
|
|
1996
|
118 |
1-4 |
p. 698-703
6 p.
|
artikel
|
| 35 |
Composition analysis of Nd x Fe y B thin films by RBS and heavy ion ERDA
|
Grötzschel, R.
|
|
1996
|
118 |
1-4 |
p. 139-143
5 p.
|
artikel
|
| 36 |
Computer studies of the surface mechanism of preferential sputtering of two-component solids. Ion beam analysis of surface composition in low dose regime
|
Samoilov, Vladimir N.
|
|
1996
|
118 |
1-4 |
p. 509-516
8 p.
|
artikel
|
| 37 |
Conventional depth profiling using narrow nuclear resonances
|
Miyagawa, Y.
|
|
1996
|
118 |
1-4 |
p. 209-213
5 p.
|
artikel
|
| 38 |
Cross section measurements for the (3He, p) nuclear reaction on B and N between 2 and 4 MeV
|
McIntyre Jr., L.C.
|
|
1996
|
118 |
1-4 |
p. 219-223
5 p.
|
artikel
|
| 39 |
Cross section of the B(α,p)C nuclear reaction for analytical applications
|
Giorginis, G.
|
|
1996
|
118 |
1-4 |
p. 224-227
4 p.
|
artikel
|
| 40 |
Cross sections for light element analysis by non-Rutherford scattering
|
Zheng, Z.S.
|
|
1996
|
118 |
1-4 |
p. 214-218
5 p.
|
artikel
|
| 41 |
CUTBA (Cleaning Up the Tower of Babel of Acronyms) in IBA
|
Amsel, G.
|
|
1996
|
118 |
1-4 |
p. 52-56
5 p.
|
artikel
|
| 42 |
Damage and structural modification of CVD diamond films caused by α-particles
|
Mikhailov, S.N.
|
|
1996
|
118 |
1-4 |
p. 753-757
5 p.
|
artikel
|
| 43 |
Defect imaging and channeling studies using channeling scanning transmission ion microscopy
|
King, P.J.C.
|
|
1996
|
118 |
1-4 |
p. 426-430
5 p.
|
artikel
|
| 44 |
Depth profile analysis of strong metal-support interactions on Rh TiO 2 model catalysts
|
Linsmeier, Ch.
|
|
1996
|
118 |
1-4 |
p. 533-540
8 p.
|
artikel
|
| 45 |
Depth profiles in SiON and AlON thin films produced by ion implantation
|
Jacobs, M.
|
|
1996
|
118 |
1-4 |
p. 714-717
4 p.
|
artikel
|
| 46 |
Depth resolved ion beam analysis of objects of art
|
Neelmeijer, C.
|
|
1996
|
118 |
1-4 |
p. 338-345
8 p.
|
artikel
|
| 47 |
Design of a new high voltage generator for ion beam analysis
|
Ishibashi, K.
|
|
1996
|
118 |
1-4 |
p. 442-446
5 p.
|
artikel
|
| 48 |
Determination of lattice displacements in 2 MeV Se+ implanted GaAs by RBS and PIXE channeling experiments
|
Wendler, E.
|
|
1996
|
118 |
1-4 |
p. 367-371
5 p.
|
artikel
|
| 49 |
Deuterium radial redistribution in Zr-liner cladding tubes
|
Takagi, Ikuji
|
|
1996
|
118 |
1-4 |
p. 238-241
4 p.
|
artikel
|
| 50 |
Differential PIXE analysis of Mesoamerican jewelry items
|
Demortier, G.
|
|
1996
|
118 |
1-4 |
p. 352-358
7 p.
|
artikel
|
| 51 |
Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison
|
Albertazzi, E.
|
|
1996
|
118 |
1-4 |
p. 128-132
5 p.
|
artikel
|
| 52 |
Diffusing species and growth interfaces during cobalt disilicide formation
|
Comrie, C.M.
|
|
1996
|
118 |
1-4 |
p. 119-122
4 p.
|
artikel
|
| 53 |
3D-microERDA microscopy of implanted H-distributions in diamond
|
Connell, S.H.
|
|
1996
|
118 |
1-4 |
p. 332-337
6 p.
|
artikel
|
| 54 |
Editorial
|
Culbertson, R.J.
|
|
1996
|
118 |
1-4 |
p. vii-
1 p.
|
artikel
|
| 55 |
Editorial Board
|
|
|
1996
|
118 |
1-4 |
p. ii-
1 p.
|
artikel
|
| 56 |
Efficient γ-ray detection in ion beam analysis
|
Piel, N.
|
|
1996
|
118 |
1-4 |
p. 186-189
4 p.
|
artikel
|
| 57 |
Emission channeling study of annealing of radiation damage in heavy-ion implanted diamond
|
Quintel, H.
|
|
1996
|
118 |
1-4 |
p. 72-75
4 p.
|
artikel
|
| 58 |
Empirical modeling of ion beam-induced hydrogen depletion
|
Turgeon, S.
|
|
1996
|
118 |
1-4 |
p. 322-326
5 p.
|
artikel
|
| 59 |
Energetic ion impacts on quartz surfaces: a study by atomic force microscopy
|
Wilson, I.H.
|
|
1996
|
118 |
1-4 |
p. 473-477
5 p.
|
artikel
|
| 60 |
Enhanced surface hardness in nitrogen-implanted silicon carbide
|
Uslu, C.
|
|
1996
|
118 |
1-4 |
p. 693-697
5 p.
|
artikel
|
| 61 |
ERDA with very heavy ion beams
|
Assmann, W.
|
|
1996
|
118 |
1-4 |
p. 242-250
9 p.
|
artikel
|
| 62 |
ERD-TOF characterization of silicon-compound multilayer and graded-index optical coatings
|
Gujrathi, S.C.
|
|
1996
|
118 |
1-4 |
p. 560-565
6 p.
|
artikel
|
| 63 |
Evaluation of spectra of energetic ions not fully stopped in ΔE−E rest telescopes
|
Prozesky, V.M.
|
|
1996
|
118 |
1-4 |
p. 327-331
5 p.
|
artikel
|
| 64 |
Evolution of the implanted 18O concentration distribution in a YBa2Cu3O7−δ film during rapid thermal annealing
|
Li, Yupu
|
|
1996
|
118 |
1-4 |
p. 670-675
6 p.
|
artikel
|
| 65 |
Fast position sensitive detection applied to time-of-flight ion scattering and recoil spectroscopy for realtime monitoring of surface composition and crystallography
|
Albert Schultz, J.
|
|
1996
|
118 |
1-4 |
p. 758-765
8 p.
|
artikel
|
| 66 |
Focusing in high-resolution time-of-flight elastic recoil detection analysis
|
Mass, A.J.H.
|
|
1996
|
118 |
1-4 |
p. 588-592
5 p.
|
artikel
|
| 67 |
Guidelines to the application of nuclear resonance to quantitative thin film analysis
|
Russell, S.W.
|
|
1996
|
118 |
1-4 |
p. 201-205
5 p.
|
artikel
|
| 68 |
Heavy ion RBS characterization of multilayer coatings deposited through the sol-gel technique
|
Aslanoglou, X.
|
|
1996
|
118 |
1-4 |
p. 630-632
3 p.
|
artikel
|
| 69 |
Heavy ion time-of-flight ERDA of high dose metal implanted germanium
|
Dytlewski, N.
|
|
1996
|
118 |
1-4 |
p. 278-282
5 p.
|
artikel
|
| 70 |
High concentration nitrogen ion doping into GaAs for the fabrication of GaAsN
|
Shima, Takayuki
|
|
1996
|
118 |
1-4 |
p. 743-747
5 p.
|
artikel
|
| 71 |
High energy single ion hit system combined with heavy ion microbeam apparatus
|
Kamiya, T.
|
|
1996
|
118 |
1-4 |
p. 423-425
3 p.
|
artikel
|
| 72 |
High resolution RBS study of the growth and the crystalline quality of ultrathin YBaCuO films
|
Hüttner, D.
|
|
1996
|
118 |
1-4 |
p. 578-583
6 p.
|
artikel
|
| 73 |
Hydrogen and deuterium profile in homoepitaxially grown CVD diamonds by ERDA method
|
Yagi, H.
|
|
1996
|
118 |
1-4 |
p. 318-321
4 p.
|
artikel
|
| 74 |
Hydrogen desorption induced by heavy-ions during surface layer analysis with ERDA
|
Behrisch, R.
|
|
1996
|
118 |
1-4 |
p. 262-267
6 p.
|
artikel
|
| 75 |
Hydrogen passivation of Si(100) wafers as templates for low temperature (T < 600°C) epitaxy
|
Atluri, V.
|
|
1996
|
118 |
1-4 |
p. 144-150
7 p.
|
artikel
|
| 76 |
In situ analysis of thin film deposition process using time of flight (TOF) ion beam analysis methods
|
Im, Jaemo
|
|
1996
|
118 |
1-4 |
p. 772-781
10 p.
|
artikel
|
| 77 |
In situ MeV ion beam analysis of ceramic surfaces modified by 100–400 keV ion irradiation
|
Yu, Ning
|
|
1996
|
118 |
1-4 |
p. 766-771
6 p.
|
artikel
|
| 78 |
In situ observation by RBS of oxygen gettering during Cs sputtering of Si-based materials
|
De Coster, W.
|
|
1996
|
118 |
1-4 |
p. 82-87
6 p.
|
artikel
|
| 79 |
In-situ Rutherford backscattering design for early SIMOX-SOI metallic screening
|
Allen, L.P.
|
|
1996
|
118 |
1-4 |
p. 782-786
5 p.
|
artikel
|
| 80 |
Investigation of weakly damaged 〈110〉, 〈111〉 and 〈100〉 silicon by means of temperature dependent dechanneling measurements
|
Weber, B.
|
|
1996
|
118 |
1-4 |
p. 113-118
6 p.
|
artikel
|
| 81 |
Ion beam analysis of diamond-like carbon films
|
Hirvonen, J-P.
|
|
1996
|
118 |
1-4 |
p. 596-601
6 p.
|
artikel
|
| 82 |
Ion beam analysis of electropolymerized porphyrin layers
|
Marée, C.H.M.
|
|
1996
|
118 |
1-4 |
p. 301-306
6 p.
|
artikel
|
| 83 |
Ion beam analysis of sialon ceramics
|
Vickridge, I.C.
|
|
1996
|
118 |
1-4 |
p. 608-612
5 p.
|
artikel
|
| 84 |
Ion-beam analysis of silicon carbide
|
Leavitt, J.A.
|
|
1996
|
118 |
1-4 |
p. 613-616
4 p.
|
artikel
|
| 85 |
Ion beam channeling and hyperfine interaction analysis for the characterization of stoichiometry and anti-site population in LiNbO3
|
Kling, A.
|
|
1996
|
118 |
1-4 |
p. 622-625
4 p.
|
artikel
|
| 86 |
Ion beam channeling study of cobalt implanted sapphire
|
Jároli, E.
|
|
1996
|
118 |
1-4 |
p. 123-127
5 p.
|
artikel
|
| 87 |
Ion-beam characterization of alumina-supported silver catalysts used for ethylene epoxidation
|
Hoflund, Gar B.
|
|
1996
|
118 |
1-4 |
p. 517-521
5 p.
|
artikel
|
| 88 |
Ion beam mixing in ZnSe CdZnSe strained layer structures
|
Morton, R.
|
|
1996
|
118 |
1-4 |
p. 704-708
5 p.
|
artikel
|
| 89 |
Ion scattering and scanning tunneling microscopy studies of stepped Cu surfaces
|
Taglauer, E.
|
|
1996
|
118 |
1-4 |
p. 456-461
6 p.
|
artikel
|
| 90 |
Irradiation effects in α-SiC studied via RBS-C, Raman-scattering and surface profiling
|
Conrad, J.
|
|
1996
|
118 |
1-4 |
p. 748-752
5 p.
|
artikel
|
| 91 |
Isotopic tracing of Si during thermal growth of Si3N4 ultrathin films
|
Baumvol, I.J.R.
|
|
1996
|
118 |
1-4 |
p. 499-504
6 p.
|
artikel
|
| 92 |
Laterally resolved crystalline damage in single-point-diamond-turned silicon
|
Jeynes, C.
|
|
1996
|
118 |
1-4 |
p. 431-436
6 p.
|
artikel
|
| 93 |
Lattice location of erbium atoms implanted into silicon
|
Kozanecki, A.
|
|
1996
|
118 |
1-4 |
p. 709-713
5 p.
|
artikel
|
| 94 |
Lead levels in Mexican human teeth from different historical periods using PIXE
|
Solis, C.
|
|
1996
|
118 |
1-4 |
p. 359-362
4 p.
|
artikel
|
| 95 |
Light and heavy element profiling using heavy ion beams
|
Goppelt-Langer, P.
|
|
1996
|
118 |
1-4 |
p. 251-255
5 p.
|
artikel
|
| 96 |
Limits in elastic recoil detection analysis with heavy ions
|
Dollinger, G.
|
|
1996
|
118 |
1-4 |
p. 291-300
10 p.
|
artikel
|
| 97 |
Low energy PIXE: advantages, drawbacks, and applications
|
Miranda, Javier
|
|
1996
|
118 |
1-4 |
p. 346-351
6 p.
|
artikel
|
| 98 |
Mapping of aerosols' elemental distribution in two zones in Romania by PIXE analysis
|
Amemiya, Susumu
|
|
1996
|
118 |
1-4 |
p. 403-407
5 p.
|
artikel
|
| 99 |
Measured stopping cross sections for hydrogen in a-Si x C1−x :H ternary compounds near their maximum values
|
Leblenc, L.
|
|
1996
|
118 |
1-4 |
p. 19-23
5 p.
|
artikel
|
| 100 |
Measurement of hydrogen content in diamond like carbon thin films by ERDA
|
Konishi, Y.
|
|
1996
|
118 |
1-4 |
p. 312-317
6 p.
|
artikel
|
| 101 |
Measurement of the stopping powers for channeled ions in ion implanted single crystals
|
Kótai, E.
|
|
1996
|
118 |
1-4 |
p. 43-46
4 p.
|
artikel
|
| 102 |
Measurements of ranges and variances of 1–20 keV N and O ions implanted in Be and C0.83H0.17 by means of RBS with a 4He beam at 350 keV
|
Pageau, J.F.
|
|
1996
|
118 |
1-4 |
p. 103-107
5 p.
|
artikel
|
| 103 |
Method for determining the composition and orientation of III–V {001} semiconductor surfaces
|
Sung, M.M.
|
|
1996
|
118 |
1-4 |
p. 522-529
8 p.
|
artikel
|
| 104 |
Microstructure and ion beam characterization of heteroepitaxial Si1−x−y Ge xCy
|
Jacobsson, Harald
|
|
1996
|
118 |
1-4 |
p. 633-639
7 p.
|
artikel
|
| 105 |
Migration of organic residuals in interlayer oxide to SiO 2 Si interface
|
Kodama, N.
|
|
1996
|
118 |
1-4 |
p. 505-508
4 p.
|
artikel
|
| 106 |
Molecular dynamics simulation of stable defect formation in Si via Coulomb explosion
|
Fedotov, S.A.
|
|
1996
|
118 |
1-4 |
p. 724-727
4 p.
|
artikel
|
| 107 |
Multiple and double scattering contributions to depth resolution and low energy background in hydrogen elastic recoil detection
|
Wielunski, L.S.
|
|
1996
|
118 |
1-4 |
p. 256-261
6 p.
|
artikel
|
| 108 |
Non-Liouvillean achromatic beam guidance systems
|
Wollnik, H.
|
|
1996
|
118 |
1-4 |
p. 47-51
5 p.
|
artikel
|
| 109 |
Nuclear reaction analysis of hydrogen in Li-containing material
|
Dersch, O.
|
|
1996
|
118 |
1-4 |
p. 180-185
6 p.
|
artikel
|
| 110 |
Off-axis STIM nuclear microprobe analysis
|
Sjöland, K.A.
|
|
1996
|
118 |
1-4 |
p. 451-455
5 p.
|
artikel
|
| 111 |
On the complementary use of ion beam techniques in the near surface analysis of implanted alloys
|
Wätjen, U.
|
|
1996
|
118 |
1-4 |
p. 676-680
5 p.
|
artikel
|
| 112 |
Optimized system for hydrogen detection
|
Zimmerman, R.L.
|
|
1996
|
118 |
1-4 |
p. 206-208
3 p.
|
artikel
|
| 113 |
Order-disorder phase transition of the Cu3Au(100) surface studied by ToF-ion scattering
|
Houssiau, L.
|
|
1996
|
118 |
1-4 |
p. 467-472
6 p.
|
artikel
|
| 114 |
Phosphorus ion implantation in type IIA diamond
|
Zhang, Z.H.
|
|
1996
|
118 |
1-4 |
p. 739-742
4 p.
|
artikel
|
| 115 |
PIXE analysis of ancient Chinese Qing dynasty porcelain
|
Cheng, Huansheng
|
|
1996
|
118 |
1-4 |
p. 377-381
5 p.
|
artikel
|
| 116 |
PIXE studies on artifacts from Saugus Iron Works
|
Narayan, Chandrika
|
|
1996
|
118 |
1-4 |
p. 396-399
4 p.
|
artikel
|
| 117 |
PIXE study of atmospheric aerosols in mountain region of Poland
|
Jagielski, J.
|
|
1996
|
118 |
1-4 |
p. 388-391
4 p.
|
artikel
|
| 118 |
Prompt charged particle activation analysis for light elements determination
|
Giorginis, G.
|
|
1996
|
118 |
1-4 |
p. 172-175
4 p.
|
artikel
|
| 119 |
Quantitative depth profiling of light elements by means of the ERD E × B technique
|
Schiettekatte, F.
|
|
1996
|
118 |
1-4 |
p. 307-311
5 p.
|
artikel
|
| 120 |
Recoil selection by pulse shape discrimination in elastic recoil detection analysis with α-particles (α-ERDA)
|
Maas, A.J.H.
|
|
1996
|
118 |
1-4 |
p. 268-273
6 p.
|
artikel
|
| 121 |
Retention of nitrogen atoms implanted into carbon
|
Jagielski, J.
|
|
1996
|
118 |
1-4 |
p. 681-683
3 p.
|
artikel
|
| 122 |
Rutherford backscattering and channeling study of Au trapped at cavities in silicon
|
Wong-Leung, J.
|
|
1996
|
118 |
1-4 |
p. 34-38
5 p.
|
artikel
|
| 123 |
Rutherford backscattering spectrometry for the analysis of atmospheric aerosols
|
Kováč, P.
|
|
1996
|
118 |
1-4 |
p. 162-166
5 p.
|
artikel
|
| 124 |
Rutherford backscattering study of thin oxide layers prepared by reactive magnetron sputtering
|
Barradas, N.P.
|
|
1996
|
118 |
1-4 |
p. 626-629
4 p.
|
artikel
|
| 125 |
Scanning electron beam annealing of sputter-deposited titanium on silicon
|
Cervera, M.
|
|
1996
|
118 |
1-4 |
p. 733-738
6 p.
|
artikel
|
| 126 |
Segregation effects in SIMS profiling of impurities in silicon by low energy oxygen ions
|
Petravić, M.
|
|
1996
|
118 |
1-4 |
p. 151-155
5 p.
|
artikel
|
| 127 |
Separation of scattered ions and neutrals in medium-energy ion scattering spectroscopy
|
Kobayashi, T.
|
|
1996
|
118 |
1-4 |
p. 584-587
4 p.
|
artikel
|
| 128 |
SIMS, RBS, and ion channelling studies of 2H+ or 18O+ irradiated LaAlO3 (100) single crystal
|
Li, Yupu
|
|
1996
|
118 |
1-4 |
p. 133-138
6 p.
|
artikel
|
| 129 |
Simultaneous multielement ERDA using a simple detector system and extremely heavy ion beams
|
Siegele, R.
|
|
1996
|
118 |
1-4 |
p. 283-290
8 p.
|
artikel
|
| 130 |
Soluble and insoluble components of air pollutants scavenged by rain water
|
Kasahara, M.
|
|
1996
|
118 |
1-4 |
p. 400-402
3 p.
|
artikel
|
| 131 |
Stoichiometric changes of Si, CoSi2 and TiSi2 during low energy oxygen bombardment in combination with oxygen bleed-in
|
Brijs, B.
|
|
1996
|
118 |
1-4 |
p. 541-546
6 p.
|
artikel
|
| 132 |
Stopping cross section of protons and deuterons in lithiumniobate near the stopping power maximum
|
Paulini, I.
|
|
1996
|
118 |
1-4 |
p. 39-42
4 p.
|
artikel
|
| 133 |
Stopping cross sections of C, Al, and Si for 7Li ions
|
Liu, Jiarui
|
|
1996
|
118 |
1-4 |
p. 24-28
5 p.
|
artikel
|
| 134 |
Stopping power determinations by the transmission technique
|
Räisänen, J.
|
|
1996
|
118 |
1-4 |
p. 1-6
6 p.
|
artikel
|
| 135 |
Stopping power measurements of 1H, 4He and 14N in Si in the energy range of 0.02–1 MeV/amu
|
Niemann, D.
|
|
1996
|
118 |
1-4 |
p. 11-18
8 p.
|
artikel
|
| 136 |
Stopping-powers and straggling of 15N ions for nuclear reaction analysis at 6.385 MeV
|
Goppelt-Langer, P.
|
|
1996
|
118 |
1-4 |
p. 7-10
4 p.
|
artikel
|
| 137 |
Strained-layer analysis with high-energy ion channeling
|
van Dijk, P.W.L.
|
|
1996
|
118 |
1-4 |
p. 97-102
6 p.
|
artikel
|
| 138 |
Structural transformations in leached uranium dioxide
|
Turos, A.
|
|
1996
|
118 |
1-4 |
p. 659-662
4 p.
|
artikel
|
| 139 |
Study of implantation damage ranges in metals at temperatures ranging from 5 to 300 K
|
Friedland, E.
|
|
1996
|
118 |
1-4 |
p. 29-33
5 p.
|
artikel
|
| 140 |
Sub-micron microbeam apparatus for high resolution materials analyses
|
Kamiya, T.
|
|
1996
|
118 |
1-4 |
p. 447-450
4 p.
|
artikel
|
| 141 |
Surface analysis of carbon based plasma facing material using MeV region ion beam
|
Amemiya, S.
|
|
1996
|
118 |
1-4 |
p. 156-161
6 p.
|
artikel
|
| 142 |
Surface and sub-surface defects on graphite after single ion impact studied with STM
|
Bolse, W.
|
|
1996
|
118 |
1-4 |
p. 488-492
5 p.
|
artikel
|
| 143 |
Surface disorder production during plasma immersion implantation and high energy ion implantation
|
El-Sherbiny, M.A.
|
|
1996
|
118 |
1-4 |
p. 728-732
5 p.
|
artikel
|
| 144 |
Surface structure of sulfur-terminated GaAs by medium energy ion scattering
|
Takai, Mikio
|
|
1996
|
118 |
1-4 |
p. 552-555
4 p.
|
artikel
|
| 145 |
The analysis of trace elements in human teeth collected from the Oxfordshire area in the UK
|
Lane, D.W.
|
|
1996
|
118 |
1-4 |
p. 392-395
4 p.
|
artikel
|
| 146 |
The Debrecen scanning proton microprobe facility and its applications to geological samples
|
Rajta, I.
|
|
1996
|
118 |
1-4 |
p. 437-441
5 p.
|
artikel
|
| 147 |
The initial stage of Pb thin film growth on Si(111) surface studied by TOF-ICISS
|
Tanaka, Yasunori
|
|
1996
|
118 |
1-4 |
p. 530-532
3 p.
|
artikel
|
| 148 |
Thickness of the SiO 2 Si interface and composition of silicon oxide thin films: effect of wafer cleaning procedures
|
Stedile, F.C.
|
|
1996
|
118 |
1-4 |
p. 493-498
6 p.
|
artikel
|
| 149 |
Time-of-flight medium energy ion scattering study of epitaxial Si Si 1 − x Ge x superlattice structures
|
McConville, C.F.
|
|
1996
|
118 |
1-4 |
p. 573-577
5 p.
|
artikel
|
| 150 |
287 trapping of implanted hydrogen in type Ia diamond
|
Smallman, C.G.
|
|
1996
|
118 |
1-4 |
p. 688-692
5 p.
|
artikel
|
| 151 |
Use of large Ge detectors in place of BGO detectors for hydrogen profiling or other particle-gamma NRA
|
Lanford, W.A.
|
|
1996
|
118 |
1-4 |
p. 176-179
4 p.
|
artikel
|
| 152 |
Use of the 7.6 MeV 16O(α, α) resonance in studying the anomalous channeling behaviour of YBa2Cu3O7 − x near T c
|
Andersen, J.U.
|
|
1996
|
118 |
1-4 |
p. 190-195
6 p.
|
artikel
|
| 153 |
Vibrations of surface atoms studied by NRRA
|
Berheide, M.
|
|
1996
|
118 |
1-4 |
p. 483-487
5 p.
|
artikel
|
Tijdschrift beschrijving