| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A CMOS threshold voltage reference source for very-low-voltage applications
|
Ferreira, Luis H.C.
|
|
|
39 |
12 |
p. 1867-1873
|
artikel
|
| 2 |
A 1-GHz, multibit, continuous-time, delta–sigma ADC for Gigabit Ethernet
|
Arias, J.
|
|
|
39 |
12 |
p. 1642-1648
|
artikel
|
| 3 |
A low-noise mixer with an image-reject notch filter for 2.4GHz applications
|
Oh, Nam-Jin
|
|
|
39 |
12 |
p. 1860-1866
|
artikel
|
| 4 |
Analysis and simulation of a novel gradually low-K dielectric structure for crosstalk reduction in VLSI
|
Moghaddam, Soodeh Aghli
|
|
|
39 |
12 |
p. 1751-1760
|
artikel
|
| 5 |
Analysis of interface recombination and self-absorption effect on the performance of QWIP–HBT–LED integrated device
|
Eladl, Sh.M.
|
|
|
39 |
12 |
p. 1649-1653
|
artikel
|
| 6 |
An effective parameter extraction method based on memetic differential evolution algorithm
|
Liu, Bo
|
|
|
39 |
12 |
p. 1761-1769
|
artikel
|
| 7 |
A new two-dimensional C–V model for prediction of maximum frequency of oscillation (f max) of deep submicron AlGaN/GaN HEMT for microwave and millimeter wave applications
|
Tyagi, Rajesh K.
|
|
|
39 |
12 |
p. 1634-1641
|
artikel
|
| 8 |
A novel current reference based on subthreshold MOSFETs with high PSRR
|
Guoyi, Yu
|
|
|
39 |
12 |
p. 1874-1879
|
artikel
|
| 9 |
AP-MOVPE of InGaAs on GaAs (001): Analysis of in situ reflectivity response
|
Habchi, M.M.
|
|
|
39 |
12 |
p. 1587-1593
|
artikel
|
| 10 |
Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn δ-doped GaAs structures
|
Srnanek, R.
|
|
|
39 |
12 |
p. 1439-1443
|
artikel
|
| 11 |
A probabilistic design optimization for MEMS tunable capacitors
|
Shavezipur, M.
|
|
|
39 |
12 |
p. 1528-1533
|
artikel
|
| 12 |
A scalable σ -space based methodology for modeling process parameter variations in analog circuits
|
Zhang, Hui
|
|
|
39 |
12 |
p. 1785-1796
|
artikel
|
| 13 |
A software technique to improve lifetime of caches containing ultra-leaky SRAM cells caused by within-die V th variation
|
Goudarzi, Maziar
|
|
|
39 |
12 |
p. 1797-1808
|
artikel
|
| 14 |
Broadband microwave spectroscopy of a GaAs point contact
|
Ahmad, S.T.
|
|
|
39 |
12 |
p. 1516-1520
|
artikel
|
| 15 |
Carbon nanotubes grown from nickel catalyst pretreated with H2/N2 plasma
|
Chang, Shang-Chou
|
|
|
39 |
12 |
p. 1572-1575
|
artikel
|
| 16 |
Characteristics of AlGaAs/GaAs heterostructure RT-SCR model
|
Barkana, B.D.
|
|
|
39 |
12 |
p. 1504-1508
|
artikel
|
| 17 |
CMOS realization of two-dimensional mixed analog–digital Hamming distance discriminator circuits for real-time imaging applications
|
Badel, Stéphane
|
|
|
39 |
12 |
p. 1817-1828
|
artikel
|
| 18 |
Comparative study of stack interwinding micro-transformers on silicon monolithic
|
Yunas, Jumril
|
|
|
39 |
12 |
p. 1564-1567
|
artikel
|
| 19 |
Comparison among emission and susceptibility reduction techniques for electromagnetic interference in digital integrated circuits
|
Alaeldine, Ali
|
|
|
39 |
12 |
p. 1728-1735
|
artikel
|
| 20 |
Crosstalk analysis for a CMOS gate driven inductively and capacitively coupled interconnects
|
Kaushik, B.K.
|
|
|
39 |
12 |
p. 1834-1842
|
artikel
|
| 21 |
Current-sensing technique for current-mode controlled voltage regulator modules
|
Boscaino, V.
|
|
|
39 |
12 |
p. 1852-1859
|
artikel
|
| 22 |
Design and simulation of logic circuits with hybrid architectures of single-electron transistors and conventional MOS devices at room temperature
|
Venkataratnam, A.
|
|
|
39 |
12 |
p. 1461-1468
|
artikel
|
| 23 |
Design formula for band-switching capacitor array in wide tuning range low-phase-noise LC-VCO
|
Chiou, Hwann-Kaeo
|
|
|
39 |
12 |
p. 1687-1692
|
artikel
|
| 24 |
Designing an ultra-high-speed multiply-accumulate structure
|
Kashfi, Fatemeh
|
|
|
39 |
12 |
p. 1476-1484
|
artikel
|
| 25 |
Design of nanoswitch based on C20-bowl molecules: A first principles study
|
Ganji, M.D.
|
|
|
39 |
12 |
p. 1499-1503
|
artikel
|
| 26 |
Design, simulation and performance evaluation of a single-electron 2-4 decoder
|
Tsiolakis, T.
|
|
|
39 |
12 |
p. 1613-1621
|
artikel
|
| 27 |
Drive current boosting of n-type tunnel FET with strained SiGe layer at source
|
Patel, Nayan
|
|
|
39 |
12 |
p. 1671-1677
|
artikel
|
| 28 |
Editorial board
|
|
|
|
39 |
12 |
p. IFC
|
artikel
|
| 29 |
Effect of annealing on the structural, optical and electrical properties of ITO films by RF sputtering under low vacuum level
|
Sathiaraj, T.S.
|
|
|
39 |
12 |
p. 1444-1451
|
artikel
|
| 30 |
Effect of carrier gas on the surface morphology of V-doped GaN layers
|
Souissi, M.
|
|
|
39 |
12 |
p. 1521-1524
|
artikel
|
| 31 |
Effect of deposition rate and thickness on the structural and electrical properties of evaporated Ni/glass and Ni/Si(100) thin films
|
Hemmous, M.
|
|
|
39 |
12 |
p. 1545-1549
|
artikel
|
| 32 |
Effect of Ge profile design on the performance of an n–p–n SiGe HBT-based analog circuit
|
Kashyap, Ankit
|
|
|
39 |
12 |
p. 1770-1773
|
artikel
|
| 33 |
Effect of oxygen partial pressure on conductivity type of MgZnO nanocrystalline thin films prepared by metal-organic chemical vapor deposition
|
Shi, Zengliang
|
|
|
39 |
12 |
p. 1583-1586
|
artikel
|
| 34 |
Effect of the interface states on the cell parameters of a thin film quasi-monocrystalline porous silicon as an active layer
|
Krichen, Monem
|
|
|
39 |
12 |
p. 1433-1438
|
artikel
|
| 35 |
Efficient approaches for designing reversible Binary Coded Decimal adders
|
Biswas, Ashis Kumer
|
|
|
39 |
12 |
p. 1693-1703
|
artikel
|
| 36 |
Efficient BEM-based substrate network extraction in silicon SoCs
|
Crovetti, Paolo S.
|
|
|
39 |
12 |
p. 1774-1784
|
artikel
|
| 37 |
Electrical characteristics of nano-crystal Si particles for nano-floating gate memory
|
Yang, Jin Seok
|
|
|
39 |
12 |
p. 1553-1555
|
artikel
|
| 38 |
Enhanced photovoltaic characteristics of solar cells based on n-type triphenodioxazine derivative
|
Qiao, Fen
|
|
|
39 |
12 |
p. 1568-1571
|
artikel
|
| 39 |
Experimental characterization and numerical analysis of the 4H-SiC p–i–n diodes static and transient behaviour
|
Pezzimenti, Fortunato
|
|
|
39 |
12 |
p. 1594-1599
|
artikel
|
| 40 |
Fixed-width multipliers for the implementation of efficient digital FIR filters
|
Garofalo, Valeria
|
|
|
39 |
12 |
p. 1491-1498
|
artikel
|
| 41 |
Formal verification of analog and mixed signal designs: A survey
|
Zaki, Mohamed H.
|
|
|
39 |
12 |
p. 1395-1404
|
artikel
|
| 42 |
Growth of Nb-catalysed GaN nanowires
|
Zhuang, Hui-Zhao
|
|
|
39 |
12 |
p. 1629-1633
|
artikel
|
| 43 |
Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation
|
Doria, Rodrigo Trevisoli
|
|
|
39 |
12 |
p. 1663-1670
|
artikel
|
| 44 |
H2 carrier gas dependence of Young's modulus and hardness of chemical vapor deposited polycrystalline 3C-SiC thin films
|
Chung, Gwiy-Sang
|
|
|
39 |
12 |
p. 1413-1415
|
artikel
|
| 45 |
High-performance PIN photodiodes on TMAH thinned silicon wafers
|
Dalla Betta, G.-F.
|
|
|
39 |
12 |
p. 1485-1490
|
artikel
|
| 46 |
High-power transverse micro-stack weakly coupled laser diode bars
|
Lei, Zhang
|
|
|
39 |
12 |
p. 1580-1582
|
artikel
|
| 47 |
Hillocks and hexagonal pits in a thick film grown by HVPE
|
Wei, T.B.
|
|
|
39 |
12 |
p. 1556-1559
|
artikel
|
| 48 |
Implementation of low power adder design and analysis based on power reduction technique
|
Jeong, Taikyeong T.
|
|
|
39 |
12 |
p. 1880-1886
|
artikel
|
| 49 |
Improved property in organic light-emitting diode utilizing two Al/Alq3 layers
|
Zhang, Chunlin
|
|
|
39 |
12 |
p. 1525-1527
|
artikel
|
| 50 |
Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD
|
Luo, Weijun
|
|
|
39 |
12 |
p. 1710-1713
|
artikel
|
| 51 |
Influence of connecting units’ thicknesses on tandem organic devices’ performances
|
Liu, Mingjun
|
|
|
39 |
12 |
p. 1622-1625
|
artikel
|
| 52 |
Inkjet printed System-in-Package design and manufacturing
|
Miettinen, Jani
|
|
|
39 |
12 |
p. 1740-1750
|
artikel
|
| 53 |
Low-noise differential transimpedance amplifier structure based on capacitor cross-coupled g m-boosting scheme
|
Jalali, M.
|
|
|
39 |
12 |
p. 1843-1851
|
artikel
|
| 54 |
Low power and high gain current reuse LNA with modified input matching and inter-stage inductors
|
Toofan, S.
|
|
|
39 |
12 |
p. 1534-1537
|
artikel
|
| 55 |
Low power multipliers based on new hybrid full adders
|
Abid, Z.
|
|
|
39 |
12 |
p. 1509-1515
|
artikel
|
| 56 |
Low-voltage nanopower clock generator for RFID applications
|
Marraccini, Francesco
|
|
|
39 |
12 |
p. 1736-1739
|
artikel
|
| 57 |
LP-MOCVD growth of ternary B x Ga1− x As epilayers on (001)GaAs substrates using TEB, TMGa and AsH3
|
Wang, Qi
|
|
|
39 |
12 |
p. 1678-1682
|
artikel
|
| 58 |
Magnetron sputtered vs. thermally evaporated gold contacts in phthalocyanine-based thin film devices
|
Pakhomov, Georgy L.
|
|
|
39 |
12 |
p. 1550-1552
|
artikel
|
| 59 |
Microwave absorption and permittivity of polyaniline thin films using overlay technique
|
Jadhav, S.V.
|
|
|
39 |
12 |
p. 1472-1475
|
artikel
|
| 60 |
Near-infrared photoluminescence of V-doped GaN
|
Touati, H.
|
|
|
39 |
12 |
p. 1457-1460
|
artikel
|
| 61 |
Ohmic contacts to single-crystalline 3C-SiC films for extreme-environment MEMS applications
|
Chung, Gwiy-Sang
|
|
|
39 |
12 |
p. 1408-1412
|
artikel
|
| 62 |
Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency
|
Kumar, Sona P.
|
|
|
39 |
12 |
p. 1416-1424
|
artikel
|
| 63 |
Photovoltaic properties of multi-walled carbon nanotubes deposited on n-doped silicon
|
Arena, A.
|
|
|
39 |
12 |
p. 1659-1662
|
artikel
|
| 64 |
Polaron effect-dependent third-order optical susceptibility in a ZnS/CdSe quantum dot quantum well
|
Chen, Zhihong
|
|
|
39 |
12 |
p. 1654-1658
|
artikel
|
| 65 |
Practical considerations in the design of SRAM cells on SOI
|
Wei, He
|
|
|
39 |
12 |
p. 1829-1833
|
artikel
|
| 66 |
Quantitative analysis of doping profile on beveled p-type GaAs structures by micro-Raman spectroscopy
|
Srnanek, R.
|
|
|
39 |
12 |
p. 1605-1612
|
artikel
|
| 67 |
Quantum states of a hydrogenic donor impurity in a cubic quantum dot by the finite difference method
|
Yang, C.S.
|
|
|
39 |
12 |
p. 1469-1471
|
artikel
|
| 68 |
Raman scattering of polycrystalline 3C–SiC film deposited on AlN buffer layer by using CVD with HMDS
|
Chung, Gwiy-Sang
|
|
|
39 |
12 |
p. 1405-1407
|
artikel
|
| 69 |
RTD characteristics for micro-thermal sensors
|
Chung, Gwiy-Sang
|
|
|
39 |
12 |
p. 1560-1563
|
artikel
|
| 70 |
Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method
|
Saad, Ismail
|
|
|
39 |
12 |
p. 1538-1541
|
artikel
|
| 71 |
Silicon on insulator photo-activated modulator
|
Abraham, Doron
|
|
|
39 |
12 |
p. 1429-1432
|
artikel
|
| 72 |
Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy
|
Cui, J.P.
|
|
|
39 |
12 |
p. 1542-1544
|
artikel
|
| 73 |
Structural characteristics of carbon nanostructures synthesized by ECR-CVD
|
Fang, Te-Hua
|
|
|
39 |
12 |
p. 1600-1604
|
artikel
|
| 74 |
Structural, electrical and optical properties of ZnO thin films deposited by sol–gel method
|
Sahal, M.
|
|
|
39 |
12 |
p. 1425-1428
|
artikel
|
| 75 |
Study on thick-film PTC thermistor fabricated by micro-pen direct writing
|
Cai, Zhixiang
|
|
|
39 |
12 |
p. 1452-1456
|
artikel
|
| 76 |
Temperature-adaptive voltage tuning for enhanced energy efficiency in ultra-low-voltage circuits
|
Kumar, Ranjith
|
|
|
39 |
12 |
p. 1714-1727
|
artikel
|
| 77 |
Test response reuse-based SoC core test compression and test scheduling for test application time minimization
|
Shao, Jingbo
|
|
|
39 |
12 |
p. 1704-1709
|
artikel
|
| 78 |
The conductance and magnetoresistance effect in a periodically magnetically modulated nanostructure
|
Lu, Jian-Duo
|
|
|
39 |
12 |
p. 1576-1579
|
artikel
|
| 79 |
UDSM subthreshold leakage model for NMOS transistor stacks
|
Al-Hertani, Hussam
|
|
|
39 |
12 |
p. 1809-1816
|
artikel
|
| 80 |
Ultrathin insulating silica layers prepared from adsorbed TEOS, H2O and NH3 as a catalyst
|
Kákoš, Jozef
|
|
|
39 |
12 |
p. 1626-1628
|
artikel
|
| 81 |
Water-soluble poly(3,4-ethylenedioxythiophene)/nano-crystalline TiO2 heterojunction solar cells
|
Shen, Liang
|
|
|
39 |
12 |
p. 1683-1686
|
artikel
|
Tijdschrift beschrijving