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                             81 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A CMOS threshold voltage reference source for very-low-voltage applications Ferreira, Luis H.C.

39 12 p. 1867-1873
artikel
2 A 1-GHz, multibit, continuous-time, delta–sigma ADC for Gigabit Ethernet Arias, J.

39 12 p. 1642-1648
artikel
3 A low-noise mixer with an image-reject notch filter for 2.4GHz applications Oh, Nam-Jin

39 12 p. 1860-1866
artikel
4 Analysis and simulation of a novel gradually low-K dielectric structure for crosstalk reduction in VLSI Moghaddam, Soodeh Aghli

39 12 p. 1751-1760
artikel
5 Analysis of interface recombination and self-absorption effect on the performance of QWIP–HBT–LED integrated device Eladl, Sh.M.

39 12 p. 1649-1653
artikel
6 An effective parameter extraction method based on memetic differential evolution algorithm Liu, Bo

39 12 p. 1761-1769
artikel
7 A new two-dimensional C–V model for prediction of maximum frequency of oscillation (f max) of deep submicron AlGaN/GaN HEMT for microwave and millimeter wave applications Tyagi, Rajesh K.

39 12 p. 1634-1641
artikel
8 A novel current reference based on subthreshold MOSFETs with high PSRR Guoyi, Yu

39 12 p. 1874-1879
artikel
9 AP-MOVPE of InGaAs on GaAs (001): Analysis of in situ reflectivity response Habchi, M.M.

39 12 p. 1587-1593
artikel
10 Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn δ-doped GaAs structures Srnanek, R.

39 12 p. 1439-1443
artikel
11 A probabilistic design optimization for MEMS tunable capacitors Shavezipur, M.

39 12 p. 1528-1533
artikel
12 A scalable σ -space based methodology for modeling process parameter variations in analog circuits Zhang, Hui

39 12 p. 1785-1796
artikel
13 A software technique to improve lifetime of caches containing ultra-leaky SRAM cells caused by within-die V th variation Goudarzi, Maziar

39 12 p. 1797-1808
artikel
14 Broadband microwave spectroscopy of a GaAs point contact Ahmad, S.T.

39 12 p. 1516-1520
artikel
15 Carbon nanotubes grown from nickel catalyst pretreated with H2/N2 plasma Chang, Shang-Chou

39 12 p. 1572-1575
artikel
16 Characteristics of AlGaAs/GaAs heterostructure RT-SCR model Barkana, B.D.

39 12 p. 1504-1508
artikel
17 CMOS realization of two-dimensional mixed analog–digital Hamming distance discriminator circuits for real-time imaging applications Badel, Stéphane

39 12 p. 1817-1828
artikel
18 Comparative study of stack interwinding micro-transformers on silicon monolithic Yunas, Jumril

39 12 p. 1564-1567
artikel
19 Comparison among emission and susceptibility reduction techniques for electromagnetic interference in digital integrated circuits Alaeldine, Ali

39 12 p. 1728-1735
artikel
20 Crosstalk analysis for a CMOS gate driven inductively and capacitively coupled interconnects Kaushik, B.K.

39 12 p. 1834-1842
artikel
21 Current-sensing technique for current-mode controlled voltage regulator modules Boscaino, V.

39 12 p. 1852-1859
artikel
22 Design and simulation of logic circuits with hybrid architectures of single-electron transistors and conventional MOS devices at room temperature Venkataratnam, A.

39 12 p. 1461-1468
artikel
23 Design formula for band-switching capacitor array in wide tuning range low-phase-noise LC-VCO Chiou, Hwann-Kaeo

39 12 p. 1687-1692
artikel
24 Designing an ultra-high-speed multiply-accumulate structure Kashfi, Fatemeh

39 12 p. 1476-1484
artikel
25 Design of nanoswitch based on C20-bowl molecules: A first principles study Ganji, M.D.

39 12 p. 1499-1503
artikel
26 Design, simulation and performance evaluation of a single-electron 2-4 decoder Tsiolakis, T.

39 12 p. 1613-1621
artikel
27 Drive current boosting of n-type tunnel FET with strained SiGe layer at source Patel, Nayan

39 12 p. 1671-1677
artikel
28 Editorial board
39 12 p. IFC
artikel
29 Effect of annealing on the structural, optical and electrical properties of ITO films by RF sputtering under low vacuum level Sathiaraj, T.S.

39 12 p. 1444-1451
artikel
30 Effect of carrier gas on the surface morphology of V-doped GaN layers Souissi, M.

39 12 p. 1521-1524
artikel
31 Effect of deposition rate and thickness on the structural and electrical properties of evaporated Ni/glass and Ni/Si(100) thin films Hemmous, M.

39 12 p. 1545-1549
artikel
32 Effect of Ge profile design on the performance of an n–p–n SiGe HBT-based analog circuit Kashyap, Ankit

39 12 p. 1770-1773
artikel
33 Effect of oxygen partial pressure on conductivity type of MgZnO nanocrystalline thin films prepared by metal-organic chemical vapor deposition Shi, Zengliang

39 12 p. 1583-1586
artikel
34 Effect of the interface states on the cell parameters of a thin film quasi-monocrystalline porous silicon as an active layer Krichen, Monem

39 12 p. 1433-1438
artikel
35 Efficient approaches for designing reversible Binary Coded Decimal adders Biswas, Ashis Kumer

39 12 p. 1693-1703
artikel
36 Efficient BEM-based substrate network extraction in silicon SoCs Crovetti, Paolo S.

39 12 p. 1774-1784
artikel
37 Electrical characteristics of nano-crystal Si particles for nano-floating gate memory Yang, Jin Seok

39 12 p. 1553-1555
artikel
38 Enhanced photovoltaic characteristics of solar cells based on n-type triphenodioxazine derivative Qiao, Fen

39 12 p. 1568-1571
artikel
39 Experimental characterization and numerical analysis of the 4H-SiC p–i–n diodes static and transient behaviour Pezzimenti, Fortunato

39 12 p. 1594-1599
artikel
40 Fixed-width multipliers for the implementation of efficient digital FIR filters Garofalo, Valeria

39 12 p. 1491-1498
artikel
41 Formal verification of analog and mixed signal designs: A survey Zaki, Mohamed H.

39 12 p. 1395-1404
artikel
42 Growth of Nb-catalysed GaN nanowires Zhuang, Hui-Zhao

39 12 p. 1629-1633
artikel
43 Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation Doria, Rodrigo Trevisoli

39 12 p. 1663-1670
artikel
44 H2 carrier gas dependence of Young's modulus and hardness of chemical vapor deposited polycrystalline 3C-SiC thin films Chung, Gwiy-Sang

39 12 p. 1413-1415
artikel
45 High-performance PIN photodiodes on TMAH thinned silicon wafers Dalla Betta, G.-F.

39 12 p. 1485-1490
artikel
46 High-power transverse micro-stack weakly coupled laser diode bars Lei, Zhang

39 12 p. 1580-1582
artikel
47 Hillocks and hexagonal pits in a thick film grown by HVPE Wei, T.B.

39 12 p. 1556-1559
artikel
48 Implementation of low power adder design and analysis based on power reduction technique Jeong, Taikyeong T.

39 12 p. 1880-1886
artikel
49 Improved property in organic light-emitting diode utilizing two Al/Alq3 layers Zhang, Chunlin

39 12 p. 1525-1527
artikel
50 Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD Luo, Weijun

39 12 p. 1710-1713
artikel
51 Influence of connecting units’ thicknesses on tandem organic devices’ performances Liu, Mingjun

39 12 p. 1622-1625
artikel
52 Inkjet printed System-in-Package design and manufacturing Miettinen, Jani

39 12 p. 1740-1750
artikel
53 Low-noise differential transimpedance amplifier structure based on capacitor cross-coupled g m-boosting scheme Jalali, M.

39 12 p. 1843-1851
artikel
54 Low power and high gain current reuse LNA with modified input matching and inter-stage inductors Toofan, S.

39 12 p. 1534-1537
artikel
55 Low power multipliers based on new hybrid full adders Abid, Z.

39 12 p. 1509-1515
artikel
56 Low-voltage nanopower clock generator for RFID applications Marraccini, Francesco

39 12 p. 1736-1739
artikel
57 LP-MOCVD growth of ternary B x Ga1− x As epilayers on (001)GaAs substrates using TEB, TMGa and AsH3 Wang, Qi

39 12 p. 1678-1682
artikel
58 Magnetron sputtered vs. thermally evaporated gold contacts in phthalocyanine-based thin film devices Pakhomov, Georgy L.

39 12 p. 1550-1552
artikel
59 Microwave absorption and permittivity of polyaniline thin films using overlay technique Jadhav, S.V.

39 12 p. 1472-1475
artikel
60 Near-infrared photoluminescence of V-doped GaN Touati, H.

39 12 p. 1457-1460
artikel
61 Ohmic contacts to single-crystalline 3C-SiC films for extreme-environment MEMS applications Chung, Gwiy-Sang

39 12 p. 1408-1412
artikel
62 Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency Kumar, Sona P.

39 12 p. 1416-1424
artikel
63 Photovoltaic properties of multi-walled carbon nanotubes deposited on n-doped silicon Arena, A.

39 12 p. 1659-1662
artikel
64 Polaron effect-dependent third-order optical susceptibility in a ZnS/CdSe quantum dot quantum well Chen, Zhihong

39 12 p. 1654-1658
artikel
65 Practical considerations in the design of SRAM cells on SOI Wei, He

39 12 p. 1829-1833
artikel
66 Quantitative analysis of doping profile on beveled p-type GaAs structures by micro-Raman spectroscopy Srnanek, R.

39 12 p. 1605-1612
artikel
67 Quantum states of a hydrogenic donor impurity in a cubic quantum dot by the finite difference method Yang, C.S.

39 12 p. 1469-1471
artikel
68 Raman scattering of polycrystalline 3C–SiC film deposited on AlN buffer layer by using CVD with HMDS Chung, Gwiy-Sang

39 12 p. 1405-1407
artikel
69 RTD characteristics for micro-thermal sensors Chung, Gwiy-Sang

39 12 p. 1560-1563
artikel
70 Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method Saad, Ismail

39 12 p. 1538-1541
artikel
71 Silicon on insulator photo-activated modulator Abraham, Doron

39 12 p. 1429-1432
artikel
72 Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy Cui, J.P.

39 12 p. 1542-1544
artikel
73 Structural characteristics of carbon nanostructures synthesized by ECR-CVD Fang, Te-Hua

39 12 p. 1600-1604
artikel
74 Structural, electrical and optical properties of ZnO thin films deposited by sol–gel method Sahal, M.

39 12 p. 1425-1428
artikel
75 Study on thick-film PTC thermistor fabricated by micro-pen direct writing Cai, Zhixiang

39 12 p. 1452-1456
artikel
76 Temperature-adaptive voltage tuning for enhanced energy efficiency in ultra-low-voltage circuits Kumar, Ranjith

39 12 p. 1714-1727
artikel
77 Test response reuse-based SoC core test compression and test scheduling for test application time minimization Shao, Jingbo

39 12 p. 1704-1709
artikel
78 The conductance and magnetoresistance effect in a periodically magnetically modulated nanostructure Lu, Jian-Duo

39 12 p. 1576-1579
artikel
79 UDSM subthreshold leakage model for NMOS transistor stacks Al-Hertani, Hussam

39 12 p. 1809-1816
artikel
80 Ultrathin insulating silica layers prepared from adsorbed TEOS, H2O and NH3 as a catalyst Kákoš, Jozef

39 12 p. 1626-1628
artikel
81 Water-soluble poly(3,4-ethylenedioxythiophene)/nano-crystalline TiO2 heterojunction solar cells Shen, Liang

39 12 p. 1683-1686
artikel
                             81 gevonden resultaten
 
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