| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A new semi-flat architecture for high speed and reduced area CORDIC chip
|
Kebbati, H.S.
|
|
|
37 |
2 |
p. 181-187
|
artikel
|
| 2 |
Cryogenic operation of graded-channel silicon-on-insulator nMOSFETs for high performance analog applications
|
Pavanello, Marcelo Antonio
|
|
|
37 |
2 |
p. 137-144
|
artikel
|
| 3 |
Design and simulation of a nanoelectronic single-electron Control—Not gate
|
Zardalidis, George T.
|
|
|
37 |
2 |
p. 94-97
|
artikel
|
| 4 |
Effect of a magnetic field on the conduction mechanism in Silicon P+N junctions
|
Idrissi-Benzohra, M.
|
|
|
37 |
2 |
p. 127-132
|
artikel
|
| 5 |
Improvement of the field emission characteristics of an oxidized porous polysilicon using annealed Pt/Ti surface emitter electrode
|
Bae, Seong-Chan
|
|
|
37 |
2 |
p. 167-173
|
artikel
|
| 6 |
In depth study of the compensation in annealed heavily carbon doped GaAs
|
Rebey, A.
|
|
|
37 |
2 |
p. 158-166
|
artikel
|
| 7 |
Investigation of ultrasonic vibrations of wire-bonding capillaries
|
Zhong, Z.W.
|
|
|
37 |
2 |
p. 107-113
|
artikel
|
| 8 |
Mass patterning of polysiloxane layers using spin coating and photolithography techniques
|
Torbiéro, B.
|
|
|
37 |
2 |
p. 133-136
|
artikel
|
| 9 |
Metastability tests of flip–flops in programmable digital circuits
|
Kalisz, J.
|
|
|
37 |
2 |
p. 174-180
|
artikel
|
| 10 |
Modeling growth rate of HfO2 thin films grown by metal–organic molecular beam epitaxy
|
Kim, Myoung-Seok
|
|
|
37 |
2 |
p. 98-106
|
artikel
|
| 11 |
NIL—a low-cost and high-throughput MEMS fabrication method compatible with IC manufacturing technology
|
Fan, Xiqiu
|
|
|
37 |
2 |
p. 121-126
|
artikel
|
| 12 |
Numerical study on performance of pyramidal and conical isotropic etched single emitters
|
Mologni, J.F.
|
|
|
37 |
2 |
p. 152-157
|
artikel
|
| 13 |
Temperature dependence of Si–GaAs energy gap using photoconductivity spectra
|
Zardas, G.E.
|
|
|
37 |
2 |
p. 91-93
|
artikel
|
| 14 |
Thermal characterisation of power devices during transient operation
|
Castellazzi, Alberto
|
|
|
37 |
2 |
p. 145-151
|
artikel
|
| 15 |
Tunnel charge transport within silicon in reversely-biased MOS tunnel structures
|
Vexler, M.I.
|
|
|
37 |
2 |
p. 114-120
|
artikel
|
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