|
| << previous |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 15 of 15 found articles
| Title: |
Tunnel charge transport within silicon in reversely-biased MOS tunnel structures |
| Author: |
Vexler, M.I. El Hdiy, A. Grgec, D. Tyaginov, S.E. Khlil, R. Meinerzhagen, B. Shulekin, A.F. Grekhov, I.V. |
| Appeared in: |
Microelectronics journal |
| Paging: | Volume 37 () nr. 2 pages 114-120 |
| Year: |
2006 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 15 of 15 found articles
| << previous |