| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advanced electromagnetic analysis of passive and active planar structures
|
Saidane, A
|
|
|
31 |
8 |
p. 711
|
artikel
|
| 2 |
Analog and Mixed-Signal Boundary-Scan
|
Saidane, A
|
|
|
31 |
8 |
p. 712
|
artikel
|
| 3 |
A simulation study on the effect of channel thickness on the characteristics of Ga0.52In0.48P/In0.2Ga0.8As/Ga0.52In0.48P DH-pHEMT
|
Yoon, S.F.
|
|
|
31 |
8 |
p. 667-676
|
artikel
|
| 4 |
A study on dielectric properties of a new polyimide film suitable for interlayer dielectric material in microelectronics applications
|
Kuntman, A
|
|
|
31 |
8 |
p. 629-634
|
artikel
|
| 5 |
A study on the poly-Si TFT and novel pixel structure for low flicker
|
Lim, Kyoung Moon
|
|
|
31 |
8 |
p. 641-646
|
artikel
|
| 6 |
Effects of rapid thermal annealing in vacuum on electrical properties of thin Ta2O5–Si structures
|
Spassov, D.
|
|
|
31 |
8 |
p. 653-661
|
artikel
|
| 7 |
Electrical modeling of the chip scale ball grid array package at radio frequencies
|
Caggiano, M.F.
|
|
|
31 |
8 |
p. 701-709
|
artikel
|
| 8 |
Improved bias–thermal-stress method for the insulator charge measurement of BN/InP MIS structures
|
Koukab, A
|
|
|
31 |
8 |
p. 647-651
|
artikel
|
| 9 |
Monitoring photoresist glass transition temperature versus processing parameters via NMR broad band spectroscopy
|
Nicolau, D.V
|
|
|
31 |
8 |
p. 677-683
|
artikel
|
| 10 |
Oxide field enhancement corrected time dependent dielectric breakdown of polyoxides
|
Gueorguiev, V.K
|
|
|
31 |
8 |
p. 663-666
|
artikel
|
| 11 |
Surface field distribution and breakdown voltage of RESURF LDMOSFETs
|
Han, S.-Y
|
|
|
31 |
8 |
p. 685-688
|
artikel
|
| 12 |
Using a sigma–delta modulator as a test vehicle for embedded mixed-signal test
|
Raczkowycz, J
|
|
|
31 |
8 |
p. 689-699
|
artikel
|
| 13 |
Zinc diffusion process investigation of InP-based test structures for high-speed avalanche photodiode fabrication
|
Yun, Ilgu
|
|
|
31 |
8 |
p. 635-639
|
artikel
|
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