| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AlAs oxidation process in GaAs/AlGaAs/AlAs heterostructures grown by molecular beam epitaxy on GaAs (n11)A substrates
|
Vaccaro, P.O
|
|
|
30 |
4-5 |
p. 387-391
|
artikel
|
| 2 |
Arsenic vapor pressure dependence of surface morphology and silicon doping in molecular beam epitaxial grown GaAs (n11)A (n=1–4) substrates
|
Ohachi, T.
|
|
|
30 |
4-5 |
p. 471-476
|
artikel
|
| 3 |
A scanning tunneling microscopy study of the GaAs(112) surfaces
|
Geelhaar, L.
|
|
|
30 |
4-5 |
p. 393-396
|
artikel
|
| 4 |
Cathodoluminescence investigations of vertically stacked, sub-μm arrays of sidewall quantum wires on patterned GaAs (311)A substrates
|
Jahn, U
|
|
|
30 |
4-5 |
p. 445-448
|
artikel
|
| 5 |
Cathodoluminescence study of pyramidal facets in piezoelectric InGaAs/GaAs multiple quantum well pin photodiodes
|
Romero, M.J
|
|
|
30 |
4-5 |
p. 427-431
|
artikel
|
| 6 |
Cluster and thin layer of compound semiconductor growth on hexagonal and vicinal cubic surface and the simulation of atom behavior
|
Vaitkus, J.
|
|
|
30 |
4-5 |
p. 335-340
|
artikel
|
| 7 |
Comparative study of the GaAs (113), (115), (001), (1 1 5), (1 1 3), and (110) surfaces by atomic force microscopy, low energy electron diffraction, and reflectance anisotropy spectroscopy
|
Pristovsek, Markus
|
|
|
30 |
4-5 |
p. 449-453
|
artikel
|
| 8 |
Editorial
|
Henini (Guest Editor), M
|
|
|
30 |
4-5 |
p. 313
|
artikel
|
| 9 |
Effect of the substrate orientation on the self-organisation of (InGa)As/GaAs quantum dots
|
Henini, M
|
|
|
30 |
4-5 |
p. 319-322
|
artikel
|
| 10 |
Formation of II–VI nanostructures on vicinal surfaces
|
Mariette, H
|
|
|
30 |
4-5 |
p. 329-334
|
artikel
|
| 11 |
Giant piezoelectric effect in GaN self-assembled quantum dots
|
Widmann, F
|
|
|
30 |
4-5 |
p. 353-356
|
artikel
|
| 12 |
Influence of substrate misorientation on the optical and structural properties of InGaAs/GaAs single strained quantum wells grown on (111)B GaAs by molecular beam epitaxy
|
Sánchez, J.J.
|
|
|
30 |
4-5 |
p. 373-378
|
artikel
|
| 13 |
Initial stages of InP/GaP (100) and (111)A,B grown by metal organic chemical vapor deposition
|
Borgi, K.
|
|
|
30 |
4-5 |
p. 347-351
|
artikel
|
| 14 |
Light emission and the quantum efficiency of lateral p–n junctions on patterned GaAs (100) substrates
|
Koo, B.J
|
|
|
30 |
4-5 |
p. 403-407
|
artikel
|
| 15 |
Low-dimensional devices fabricated by molecular beam epitaxy regrowth over patterned δ-doped backgates
|
Leadbeater, M.L.
|
|
|
30 |
4-5 |
p. 315-318
|
artikel
|
| 16 |
Metalorganic vapor phase epitaxy growth and properties of GaAs/AlGaAs and InGaAs/GaAs quantum well structures on (111)A GaAs substrates
|
Cho, Soohaeng
|
|
|
30 |
4-5 |
p. 455-459
|
artikel
|
| 17 |
Morphological instabilities during homoepitaxy on vicinal GaAs(110) surfaces
|
Tejedor, P
|
|
|
30 |
4-5 |
p. 477-482
|
artikel
|
| 18 |
Multiperiod piezoelectric-barrier all-optical light modulator
|
Ortiz, V
|
|
|
30 |
4-5 |
p. 409-412
|
artikel
|
| 19 |
(N11)A GaAs: a preferable platform for high quality GaAs/AlGaAs structures
|
Shtrikman, H.
|
|
|
30 |
4-5 |
p. 323-328
|
artikel
|
| 20 |
New relaxation mechanisms in InGaAs/GaAs (111) multiple quantum well
|
Gutiérrez, M.
|
|
|
30 |
4-5 |
p. 467-470
|
artikel
|
| 21 |
Optical and morphological properties of In(Ga)As/GaAs quantum dots grown on novel index surfaces
|
Sanguinetti, S.
|
|
|
30 |
4-5 |
p. 419-425
|
artikel
|
| 22 |
Optical investigation of the relaxation process in InGaAs/GaAs single strained quantum wells grown on (001) and (111)B GaAs substrates
|
Sánchez, J.J.
|
|
|
30 |
4-5 |
p. 363-366
|
artikel
|
| 23 |
Optical study of germanium nanostructures grown on a Si(118) vicinal substrate
|
Bremond, G
|
|
|
30 |
4-5 |
p. 357-362
|
artikel
|
| 24 |
Optical transitions of Al0.35Ga0.65As/GaAs asymmetric double quantum wells grown on GaAs(n11)A (n≤4) substrates
|
Feng, J.M
|
|
|
30 |
4-5 |
p. 433-437
|
artikel
|
| 25 |
Piezoelectric field determination in strained InGaAs quantum wells grown on [111]B GaAs substrates by differential photocurrent
|
Izpura, J.I
|
|
|
30 |
4-5 |
p. 439-444
|
artikel
|
| 26 |
Piezoelectric InGaAs/GaAs (111)B multiple quantum well photodiodes: optoelectronic properties by electron beam induced current and cathodoluminescence
|
Romero, M.J.
|
|
|
30 |
4-5 |
p. 413-417
|
artikel
|
| 27 |
Selective molecular beam epitaxy growth of quantum wire–dot coupled structures with novel high index facets for InGaAs single electron transistor arrays
|
Fujikura, Hajime
|
|
|
30 |
4-5 |
p. 397-401
|
artikel
|
| 28 |
Self-ordered nanostructures grown by organometallic chemical vapor deposition on V-grooved substrates: experiments and Monte-Carlo simulations
|
Lelarge, F.
|
|
|
30 |
4-5 |
p. 461-466
|
artikel
|
| 29 |
Size and shape modification of self assembled InAs quantum dots and stacked layers by in-situ etching
|
Schuler, H.
|
|
|
30 |
4-5 |
p. 341-345
|
artikel
|
| 30 |
Super-flat (411)A interfaces and uniformly corrugated (775)B interfaces in GaAs/AlGaAs and InGaAs/InAlAs heterostructures grown by molecular beam epitaxy
|
Hiyamizu, S.
|
|
|
30 |
4-5 |
p. 379-385
|
artikel
|
| 31 |
Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates
|
Tsai, F.Y.
|
|
|
30 |
4-5 |
p. 367-371
|
artikel
|
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