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                             31 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 AlAs oxidation process in GaAs/AlGaAs/AlAs heterostructures grown by molecular beam epitaxy on GaAs (n11)A substrates Vaccaro, P.O

30 4-5 p. 387-391
artikel
2 Arsenic vapor pressure dependence of surface morphology and silicon doping in molecular beam epitaxial grown GaAs (n11)A (n=1–4) substrates Ohachi, T.

30 4-5 p. 471-476
artikel
3 A scanning tunneling microscopy study of the GaAs(112) surfaces Geelhaar, L.

30 4-5 p. 393-396
artikel
4 Cathodoluminescence investigations of vertically stacked, sub-μm arrays of sidewall quantum wires on patterned GaAs (311)A substrates Jahn, U

30 4-5 p. 445-448
artikel
5 Cathodoluminescence study of pyramidal facets in piezoelectric InGaAs/GaAs multiple quantum well pin photodiodes Romero, M.J

30 4-5 p. 427-431
artikel
6 Cluster and thin layer of compound semiconductor growth on hexagonal and vicinal cubic surface and the simulation of atom behavior Vaitkus, J.

30 4-5 p. 335-340
artikel
7 Comparative study of the GaAs (113), (115), (001), (1 1 5), (1 1 3), and (110) surfaces by atomic force microscopy, low energy electron diffraction, and reflectance anisotropy spectroscopy Pristovsek, Markus

30 4-5 p. 449-453
artikel
8 Editorial Henini (Guest Editor), M

30 4-5 p. 313
artikel
9 Effect of the substrate orientation on the self-organisation of (InGa)As/GaAs quantum dots Henini, M

30 4-5 p. 319-322
artikel
10 Formation of II–VI nanostructures on vicinal surfaces Mariette, H

30 4-5 p. 329-334
artikel
11 Giant piezoelectric effect in GaN self-assembled quantum dots Widmann, F

30 4-5 p. 353-356
artikel
12 Influence of substrate misorientation on the optical and structural properties of InGaAs/GaAs single strained quantum wells grown on (111)B GaAs by molecular beam epitaxy Sánchez, J.J.

30 4-5 p. 373-378
artikel
13 Initial stages of InP/GaP (100) and (111)A,B grown by metal organic chemical vapor deposition Borgi, K.

30 4-5 p. 347-351
artikel
14 Light emission and the quantum efficiency of lateral p–n junctions on patterned GaAs (100) substrates Koo, B.J

30 4-5 p. 403-407
artikel
15 Low-dimensional devices fabricated by molecular beam epitaxy regrowth over patterned δ-doped backgates Leadbeater, M.L.

30 4-5 p. 315-318
artikel
16 Metalorganic vapor phase epitaxy growth and properties of GaAs/AlGaAs and InGaAs/GaAs quantum well structures on (111)A GaAs substrates Cho, Soohaeng

30 4-5 p. 455-459
artikel
17 Morphological instabilities during homoepitaxy on vicinal GaAs(110) surfaces Tejedor, P

30 4-5 p. 477-482
artikel
18 Multiperiod piezoelectric-barrier all-optical light modulator Ortiz, V

30 4-5 p. 409-412
artikel
19 (N11)A GaAs: a preferable platform for high quality GaAs/AlGaAs structures Shtrikman, H.

30 4-5 p. 323-328
artikel
20 New relaxation mechanisms in InGaAs/GaAs (111) multiple quantum well Gutiérrez, M.

30 4-5 p. 467-470
artikel
21 Optical and morphological properties of In(Ga)As/GaAs quantum dots grown on novel index surfaces Sanguinetti, S.

30 4-5 p. 419-425
artikel
22 Optical investigation of the relaxation process in InGaAs/GaAs single strained quantum wells grown on (001) and (111)B GaAs substrates Sánchez, J.J.

30 4-5 p. 363-366
artikel
23 Optical study of germanium nanostructures grown on a Si(118) vicinal substrate Bremond, G

30 4-5 p. 357-362
artikel
24 Optical transitions of Al0.35Ga0.65As/GaAs asymmetric double quantum wells grown on GaAs(n11)A (n≤4) substrates Feng, J.M

30 4-5 p. 433-437
artikel
25 Piezoelectric field determination in strained InGaAs quantum wells grown on [111]B GaAs substrates by differential photocurrent Izpura, J.I

30 4-5 p. 439-444
artikel
26 Piezoelectric InGaAs/GaAs (111)B multiple quantum well photodiodes: optoelectronic properties by electron beam induced current and cathodoluminescence Romero, M.J.

30 4-5 p. 413-417
artikel
27 Selective molecular beam epitaxy growth of quantum wire–dot coupled structures with novel high index facets for InGaAs single electron transistor arrays Fujikura, Hajime

30 4-5 p. 397-401
artikel
28 Self-ordered nanostructures grown by organometallic chemical vapor deposition on V-grooved substrates: experiments and Monte-Carlo simulations Lelarge, F.

30 4-5 p. 461-466
artikel
29 Size and shape modification of self assembled InAs quantum dots and stacked layers by in-situ etching Schuler, H.

30 4-5 p. 341-345
artikel
30 Super-flat (411)A interfaces and uniformly corrugated (775)B interfaces in GaAs/AlGaAs and InGaAs/InAlAs heterostructures grown by molecular beam epitaxy Hiyamizu, S.

30 4-5 p. 379-385
artikel
31 Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates Tsai, F.Y.

30 4-5 p. 367-371
artikel
                             31 gevonden resultaten
 
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