nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
AlAs oxidation process in GaAs/AlGaAs/AlAs heterostructures grown by molecular beam epitaxy on GaAs (n11)A substrates
|
Vaccaro, P.O |
|
|
30 |
4-5 |
p. 387-391 |
artikel |
2 |
Arsenic vapor pressure dependence of surface morphology and silicon doping in molecular beam epitaxial grown GaAs (n11)A (n=1–4) substrates
|
Ohachi, T. |
|
|
30 |
4-5 |
p. 471-476 |
artikel |
3 |
A scanning tunneling microscopy study of the GaAs(112) surfaces
|
Geelhaar, L. |
|
|
30 |
4-5 |
p. 393-396 |
artikel |
4 |
Cathodoluminescence investigations of vertically stacked, sub-μm arrays of sidewall quantum wires on patterned GaAs (311)A substrates
|
Jahn, U |
|
|
30 |
4-5 |
p. 445-448 |
artikel |
5 |
Cathodoluminescence study of pyramidal facets in piezoelectric InGaAs/GaAs multiple quantum well pin photodiodes
|
Romero, M.J |
|
|
30 |
4-5 |
p. 427-431 |
artikel |
6 |
Cluster and thin layer of compound semiconductor growth on hexagonal and vicinal cubic surface and the simulation of atom behavior
|
Vaitkus, J. |
|
|
30 |
4-5 |
p. 335-340 |
artikel |
7 |
Comparative study of the GaAs (113), (115), (001), (1 1 5), (1 1 3), and (110) surfaces by atomic force microscopy, low energy electron diffraction, and reflectance anisotropy spectroscopy
|
Pristovsek, Markus |
|
|
30 |
4-5 |
p. 449-453 |
artikel |
8 |
Editorial
|
Henini (Guest Editor), M |
|
|
30 |
4-5 |
p. 313 |
artikel |
9 |
Effect of the substrate orientation on the self-organisation of (InGa)As/GaAs quantum dots
|
Henini, M |
|
|
30 |
4-5 |
p. 319-322 |
artikel |
10 |
Formation of II–VI nanostructures on vicinal surfaces
|
Mariette, H |
|
|
30 |
4-5 |
p. 329-334 |
artikel |
11 |
Giant piezoelectric effect in GaN self-assembled quantum dots
|
Widmann, F |
|
|
30 |
4-5 |
p. 353-356 |
artikel |
12 |
Influence of substrate misorientation on the optical and structural properties of InGaAs/GaAs single strained quantum wells grown on (111)B GaAs by molecular beam epitaxy
|
Sánchez, J.J. |
|
|
30 |
4-5 |
p. 373-378 |
artikel |
13 |
Initial stages of InP/GaP (100) and (111)A,B grown by metal organic chemical vapor deposition
|
Borgi, K. |
|
|
30 |
4-5 |
p. 347-351 |
artikel |
14 |
Light emission and the quantum efficiency of lateral p–n junctions on patterned GaAs (100) substrates
|
Koo, B.J |
|
|
30 |
4-5 |
p. 403-407 |
artikel |
15 |
Low-dimensional devices fabricated by molecular beam epitaxy regrowth over patterned δ-doped backgates
|
Leadbeater, M.L. |
|
|
30 |
4-5 |
p. 315-318 |
artikel |
16 |
Metalorganic vapor phase epitaxy growth and properties of GaAs/AlGaAs and InGaAs/GaAs quantum well structures on (111)A GaAs substrates
|
Cho, Soohaeng |
|
|
30 |
4-5 |
p. 455-459 |
artikel |
17 |
Morphological instabilities during homoepitaxy on vicinal GaAs(110) surfaces
|
Tejedor, P |
|
|
30 |
4-5 |
p. 477-482 |
artikel |
18 |
Multiperiod piezoelectric-barrier all-optical light modulator
|
Ortiz, V |
|
|
30 |
4-5 |
p. 409-412 |
artikel |
19 |
(N11)A GaAs: a preferable platform for high quality GaAs/AlGaAs structures
|
Shtrikman, H. |
|
|
30 |
4-5 |
p. 323-328 |
artikel |
20 |
New relaxation mechanisms in InGaAs/GaAs (111) multiple quantum well
|
Gutiérrez, M. |
|
|
30 |
4-5 |
p. 467-470 |
artikel |
21 |
Optical and morphological properties of In(Ga)As/GaAs quantum dots grown on novel index surfaces
|
Sanguinetti, S. |
|
|
30 |
4-5 |
p. 419-425 |
artikel |
22 |
Optical investigation of the relaxation process in InGaAs/GaAs single strained quantum wells grown on (001) and (111)B GaAs substrates
|
Sánchez, J.J. |
|
|
30 |
4-5 |
p. 363-366 |
artikel |
23 |
Optical study of germanium nanostructures grown on a Si(118) vicinal substrate
|
Bremond, G |
|
|
30 |
4-5 |
p. 357-362 |
artikel |
24 |
Optical transitions of Al0.35Ga0.65As/GaAs asymmetric double quantum wells grown on GaAs(n11)A (n≤4) substrates
|
Feng, J.M |
|
|
30 |
4-5 |
p. 433-437 |
artikel |
25 |
Piezoelectric field determination in strained InGaAs quantum wells grown on [111]B GaAs substrates by differential photocurrent
|
Izpura, J.I |
|
|
30 |
4-5 |
p. 439-444 |
artikel |
26 |
Piezoelectric InGaAs/GaAs (111)B multiple quantum well photodiodes: optoelectronic properties by electron beam induced current and cathodoluminescence
|
Romero, M.J. |
|
|
30 |
4-5 |
p. 413-417 |
artikel |
27 |
Selective molecular beam epitaxy growth of quantum wire–dot coupled structures with novel high index facets for InGaAs single electron transistor arrays
|
Fujikura, Hajime |
|
|
30 |
4-5 |
p. 397-401 |
artikel |
28 |
Self-ordered nanostructures grown by organometallic chemical vapor deposition on V-grooved substrates: experiments and Monte-Carlo simulations
|
Lelarge, F. |
|
|
30 |
4-5 |
p. 461-466 |
artikel |
29 |
Size and shape modification of self assembled InAs quantum dots and stacked layers by in-situ etching
|
Schuler, H. |
|
|
30 |
4-5 |
p. 341-345 |
artikel |
30 |
Super-flat (411)A interfaces and uniformly corrugated (775)B interfaces in GaAs/AlGaAs and InGaAs/InAlAs heterostructures grown by molecular beam epitaxy
|
Hiyamizu, S. |
|
|
30 |
4-5 |
p. 379-385 |
artikel |
31 |
Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates
|
Tsai, F.Y. |
|
|
30 |
4-5 |
p. 367-371 |
artikel |