| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A mathematical model for epitaxial growth on nonplanar substrates
|
Domínguez, Pablo S.
|
|
|
26 |
8 |
p. 751-757
|
article
|
| 2 |
Coherently strained InAs insertions in GaAs: do they form quantum wires and dots?
|
Brandt, Oliver
|
|
|
26 |
8 |
p. 861-870
|
article
|
| 3 |
Device update
|
|
|
|
26 |
8 |
p. i-x
|
article
|
| 4 |
Effect of As overpressure on Si-doped (111)A, (211)A and (311)A GaAs grown by molecular beam epitaxy
|
Johnston, D.
|
|
|
26 |
8 |
p. 759-765
|
article
|
| 5 |
Fabrication of patterned (311)A GaAs substrates by ArF laser-assisted Cl2 etching
|
Tejedor, Paloma
|
|
|
26 |
8 |
p. 853-859
|
article
|
| 6 |
Growth of pseudomorphic InGaAs/GaAs quantum wells on [111]B GaAs for strained layer, piezoelectric, optoelectronic devices
|
Grey, R.
|
|
|
26 |
8 |
p. 811-820
|
article
|
| 7 |
Growth optimization and optical properties of GaAs-(Ga,Al)As quantum well structures on UV-ozone prepared nominal (111)B GaAs surfaces
|
García, B.J.
|
|
|
26 |
8 |
p. 775-781
|
article
|
| 8 |
Intermetal dielectric deposition by electron cyclotron resonance chemical vapor deposition (ECR CVD)
|
Lassig, Stephan E.
|
|
|
26 |
8 |
p. xi-xxiii
|
article
|
| 9 |
Introduction to the 1st International Workshop on growth, characterization and exploitation of epitaxial III–V compound semiconductor on novel index surfaces
|
Henini, M.
|
|
|
26 |
8 |
p. 737-738
|
article
|
| 10 |
In x Ga1−x As/InP quantum well structures grown on [111]B InP
|
Hopkinson, M.
|
|
|
26 |
8 |
p. 805-810
|
article
|
| 11 |
List of contents and author index volume 26, 1995
|
|
|
|
26 |
8 |
p. III-VII, IX-XI
|
article
|
| 12 |
MBE growth and characterization of high purity GaAs/AIGaAs on the (110) surface of GaAs
|
Sørensen, C.B.
|
|
|
26 |
8 |
p. 767-773
|
article
|
| 13 |
MBE growth and device applications of lattice-matched and strained heterostructures on (n11)-oriented and patterned substrates
|
Bhattacharya, Pallab
|
|
|
26 |
8 |
p. 887-896
|
article
|
| 14 |
MBE growth and Raman analysis of [hhk]GaAs/(Si or CaF2) highly strained hetero-structures
|
Puech, P.
|
|
|
26 |
8 |
p. 789-795
|
article
|
| 15 |
Molecular beam epitaxy of AlGaInAs on patterned InP substrates for optoelectronic applications
|
Praseuth, J.P.
|
|
|
26 |
8 |
p. 841-852
|
article
|
| 16 |
Optical characterization of [111]B InGaAs layers
|
Calle, F.
|
|
|
26 |
8 |
p. 821-826
|
article
|
| 17 |
Optical spectroscopy of self-organized nanoscale hetero-structures involving high-index surfaces
|
Ledentsov, N.N.
|
|
|
26 |
8 |
p. 871-879
|
article
|
| 18 |
Piezoelectric field measurements by photoreflectance in strained InGaAs/GaAs structures grown on polar substrates
|
Berger, P.D.
|
|
|
26 |
8 |
p. 827-833
|
article
|
| 19 |
Piezoelectric fields in one- and two-dimensional heterostructures fabricated on high-index surfaces
|
De Caro, Liberato
|
|
|
26 |
8 |
p. 835-840
|
article
|
| 20 |
Quantum transport of p-type GaAs/(AlGa)As heterostructures grown on non-(100) substrates by molecular beam epitaxy
|
Henini, M.
|
|
|
26 |
8 |
p. 739-744
|
article
|
| 21 |
Raman scattering in (111) strained heterostructures
|
Attolini, G.
|
|
|
26 |
8 |
p. 797-804
|
article
|
| 22 |
Seeded self-ordering of GaAs/AlGaAs quantum wires on non-planar substrates
|
Kapon, E.
|
|
|
26 |
8 |
p. 881-886
|
article
|
| 23 |
Stability of (114) and (114) facets in III–V compounds under usual MBE conditions
|
Ponchet, A.
|
|
|
26 |
8 |
p. 783-788
|
article
|
| 24 |
The growth of high mobility heterostructures on (311)B GaAs
|
Simmons, M.Y.
|
|
|
26 |
8 |
p. 897-902
|
article
|
| 25 |
Valence band structure of (001), (012), (011), (111), (112), (113) GaAs–AlGaAs quantum wells
|
Los, J.
|
|
|
26 |
8 |
p. 745-749
|
article
|
Journal description