| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A model for hot-electron and hot-hole injection in flash EEPROM programming
|
Concannon, A.
|
|
|
25 |
7 |
p. 469-473
|
artikel
|
| 2 |
Analysis of low energy boron implants in silicon through SiO2 films: implantation damage and anomalous diffusion
|
Kaabi, L.
|
|
|
25 |
7 |
p. 567-576
|
artikel
|
| 3 |
Asynchronous circuit design for VLSI signal processing
|
Harris, M.S.
|
|
|
25 |
7 |
p. 604
|
artikel
|
| 4 |
Characterization and manufacturability of a 200 Å gate oxide
|
Whiston, S.
|
|
|
25 |
7 |
p. 475-483
|
artikel
|
| 5 |
Characterization of flash structures erased with ultra-short pulses
|
Lanzoni, Massimo
|
|
|
25 |
7 |
p. 491-494
|
artikel
|
| 6 |
Charge build-up and oxide wear-out during Fowler-Nordheim electron injection in irradiated MOS structures
|
Brożek, Tomasz
|
|
|
25 |
7 |
p. 507-514
|
artikel
|
| 7 |
Designer's guide to testable ASIC devices
|
Harris, M.S.
|
|
|
25 |
7 |
p. 601
|
artikel
|
| 8 |
Designing with FPGAs and CPLDs
|
Harris, M.S.
|
|
|
25 |
7 |
p. 607-608
|
artikel
|
| 9 |
Electrical properties of thin high- dielectric Ta2O5 films
|
Rausch, N.
|
|
|
25 |
7 |
p. 533-537
|
artikel
|
| 10 |
Evaluation of hot-carrier degradation of n-channel MOSFETs at low gate bias
|
Meehan, Alan
|
|
|
25 |
7 |
p. 463-467
|
artikel
|
| 11 |
Evaluation of the lifetime and failure probability for inter-poly oxides from RVS measurements
|
Martin, Andreas
|
|
|
25 |
7 |
p. 553-557
|
artikel
|
| 12 |
Fuzzy reasoning in information, decision and control systems
|
Osborn, C.
|
|
|
25 |
7 |
p. 603
|
artikel
|
| 13 |
Heterojunction transistors and small size effects in devices
|
Henini, Mahomed
|
|
|
25 |
7 |
p. 606-607
|
artikel
|
| 14 |
Impact of furnace nitridation time in N2O ambient on the quality of the Si/SiO2 system
|
Le Bihan, R.
|
|
|
25 |
7 |
p. 577-582
|
artikel
|
| 15 |
Influence of ionizing radiation on the conduction properties of ultra-thin silica layers
|
Sarrabayrouse, G.J.
|
|
|
25 |
7 |
p. 583-588
|
artikel
|
| 16 |
Japanese companies maintain lead in semiconductor memory technologies
|
|
|
|
25 |
7 |
p. vi-xiv
|
artikel
|
| 17 |
MOSFET degradation during substrate hot electron stress
|
Zhao, S.P.
|
|
|
25 |
7 |
p. 515-522
|
artikel
|
| 18 |
Optical transmission for the subscriber loop
|
Marincic, A.
|
|
|
25 |
7 |
p. 604-606
|
artikel
|
| 19 |
Plasma-grown oxides on silicon with extremely low interface state densities
|
Kennedy, G.P.
|
|
|
25 |
7 |
p. 485-489
|
artikel
|
| 20 |
Quantum effects in accumulated MOS thin dielectric structures
|
Olivo, Piero
|
|
|
25 |
7 |
p. 523-531
|
artikel
|
| 21 |
Relaxational polarization and charge injection in thin films of silicon nitride
|
Homann, M.
|
|
|
25 |
7 |
p. 559-566
|
artikel
|
| 22 |
Sensor technology and devices
|
Janković, N.D.
|
|
|
25 |
7 |
p. 608
|
artikel
|
| 23 |
SIMS study of rapid nitridation of silicon dioxide thick films in an ammonia ambient
|
Bréelle, E.
|
|
|
25 |
7 |
p. 501-505
|
artikel
|
| 24 |
System designs into silicon
|
Harris, M.S.
|
|
|
25 |
7 |
p. 601-602
|
artikel
|
| 25 |
The economics of automatic testing
|
Dislis, Chryssa
|
|
|
25 |
7 |
p. 602-603
|
artikel
|
| 26 |
The gigabit generation
|
Szweda, Roy
|
|
|
25 |
7 |
p. iii-v
|
artikel
|
| 27 |
The impact of source composition evolution on optical coating characteristics
|
Piccirillo, A.
|
|
|
25 |
7 |
p. 589-599
|
artikel
|
| 28 |
The 5th ESPRIT workshop on the characterization and growth of thin dielectrics in microelectronics
|
Mathewson, Alan
|
|
|
25 |
7 |
p. xxi-xxii
|
artikel
|
| 29 |
Thin SiO2 films nitrided by rapid thermal processing in NH3 or N2O for applications in EEPROMs
|
Dutoit, M.
|
|
|
25 |
7 |
p. 539-551
|
artikel
|
| 30 |
Thin SiO2 films nitrided in N2O
|
Bellafiore, N.
|
|
|
25 |
7 |
p. 495-500
|
artikel
|
| 31 |
US companies dominate SEMICON West 94
|
|
|
|
25 |
7 |
p. xv-xx
|
artikel
|
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