| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Dielectric properties of polyoxides for EEPROM
|
Fernholz, G.
|
|
|
24 |
4 |
p. 435-444
|
artikel
|
| 2 |
Edge effects on polyoxide capacitors
|
Haspeslagh, L.
|
|
|
24 |
4 |
p. 427-433
|
artikel
|
| 3 |
Electrical characteristics of thin reoxidized dual-layer oxides
|
Bauer, A.J.
|
|
|
24 |
4 |
p. 415-420
|
artikel
|
| 4 |
Electrical characterization of oxide in MOS devices using low energy electron beam filling of traps
|
Charpenel, P.
|
|
|
24 |
4 |
p. 377-380
|
artikel
|
| 5 |
EpicTM—An advanced dielectric solution meeting advanced dielectric film challenges
|
|
|
|
24 |
4 |
p. 302-307
|
artikel
|
| 6 |
FT-IR, SIMS and electrical characterization of Si3N4 thin films obtained from CVD, assisted by in situ electrical discharge
|
Balland, B.
|
|
|
24 |
4 |
p. 389-393
|
artikel
|
| 7 |
Influence of series resistance in oxide parameter extraction from accelerated tests data
|
Pio, F.
|
|
|
24 |
4 |
p. 445-451
|
artikel
|
| 8 |
In situ investigation of amorphous silicon/silicon nitride interfaces combining UV-visible and infrared ellipsometry
|
Drevillon, B.
|
|
|
24 |
4 |
p. 347-352
|
artikel
|
| 9 |
Models for the Si–SiO2 interface degradation at low injected electron fluences
|
Mir, A.
|
|
|
24 |
4 |
p. 361-369
|
artikel
|
| 10 |
Motorola rugged accelerometer
|
|
|
|
24 |
4 |
p. 328-332, 459-460
|
artikel
|
| 11 |
Neurocomputers solving basic boundary problems
|
McDonald, Jo Ann
|
|
|
24 |
4 |
p. 293-297
|
artikel
|
| 12 |
On the endurance performance of FLOTOX EEPROM cells with WSi2 overcoated floating gate electrode
|
Papadas, C.
|
|
|
24 |
4 |
p. 395-399
|
artikel
|
| 13 |
Optical and electrical characterization of ultra-thin oxides grown by rapid thermal processing in O2 or N2O
|
Gonon, N.
|
|
|
24 |
4 |
p. 401-407
|
artikel
|
| 14 |
Patent survey on semiconductors and integrated circuits
|
Terpstra, Marten
|
|
|
24 |
4 |
p. 298-301
|
artikel
|
| 15 |
Silicon oxide deposited by direct photolysis of N2O and SiH4 at 185 nm on sulfur-treated InP: application to InP MISFETs
|
Proust, N
|
|
|
24 |
4 |
p. 371-376
|
artikel
|
| 16 |
Temperature, field and technological dependences of thin oxide breakdown characteristics
|
Monsérié, C.
|
|
|
24 |
4 |
p. 353-360
|
artikel
|
| 17 |
Temperature variation of nitrogen content by N2O-rapid thermal processing of silicon and of silicon oxide on silicon
|
Weidner, G.
|
|
|
24 |
4 |
p. 409-413
|
artikel
|
| 18 |
The evolving role of defects and contamination in semiconductor manufacturing
|
Parks, Harold G.
|
|
|
24 |
4 |
p. 313-327
|
artikel
|
| 19 |
Thermal oxidation of silicon and residual fixed charge
|
Wolters, D.R.
|
|
|
24 |
4 |
p. 333-346
|
artikel
|
| 20 |
The 4th ESPRIT workshop on the characterisation and growth of thin dielectrics in microelectronics
|
|
|
|
24 |
4 |
p. 291-292
|
artikel
|
| 21 |
Thin oxide nitridation in N2O by RTP for non-volatile memories
|
Bellafiore, N.
|
|
|
24 |
4 |
p. 453-458
|
artikel
|
| 22 |
Thin Ta2O5 films prepared by low pressure metal organic CVD
|
Rausch, N.
|
|
|
24 |
4 |
p. 421-426
|
artikel
|
| 23 |
19th International symposium on GaAs and related compounds, Karuizawa, Japan, Sept. 28 – Oct. 2, 1992
|
Weimann, Gunther
|
|
|
24 |
4 |
p. 308-312
|
artikel
|
| 24 |
Wear-out properties of irradiated oxides in MOS structures
|
Brożek, T.
|
|
|
24 |
4 |
p. 381-387
|
artikel
|
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