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                             9 results found
no title author magazine year volume issue page(s) type
1 A new multi-layer ion implantation model for process simulation Pantić, D.

20 6 p. 5-10
article
2 Editorial Butcher, John

20 6 p. 4
article
3 Effects of nitrogen and argon as carrier gases and annealing ambients on the physical properties of PECVD silicon nitride Shams, Q.A.

20 6 p. 49-59
article
4 Forthcoming events
20 6 p. 64
article
5 Gate oxide breakdown statistics in wearout tests of metal-oxide-semiconductor structures Suñé, J.

20 6 p. 27-39
article
6 Interface properties of two step thin gate oxides using 1,1,1-trichloroethane Bhan, R.K.

20 6 p. 41-48
article
7 Investigation of gate oxide breakdown in CMOS integrated circuits Peŝić, B.

20 6 p. 19-26
article
8 Research and development
20 6 p. 61-63
article
9 The effect of composition and exposure to external factors on the electronic structure of amorphous silicon nitride in memory devices Domashevskaya, E.P.

20 6 p. 11-18
article
                             9 results found
 
 Koninklijke Bibliotheek - National Library of the Netherlands