Digital Library
Close
Browse articles from a journal
Search for
Magazine
Article
ISSN
NBN article
NBN magazine
DARE/NARCIS document
with title:
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
9 results found
no
title
author
magazine
year
volume
issue
page(s)
type
1
A new multi-layer ion implantation model for process simulation
Pantić, D.
20
6
p. 5-10
article
2
Editorial
Butcher, John
20
6
p. 4
article
3
Effects of nitrogen and argon as carrier gases and annealing ambients on the physical properties of PECVD silicon nitride
Shams, Q.A.
20
6
p. 49-59
article
4
Forthcoming events
20
6
p. 64
article
5
Gate oxide breakdown statistics in wearout tests of metal-oxide-semiconductor structures
Suñé, J.
20
6
p. 27-39
article
6
Interface properties of two step thin gate oxides using 1,1,1-trichloroethane
Bhan, R.K.
20
6
p. 41-48
article
7
Investigation of gate oxide breakdown in CMOS integrated circuits
Peŝić, B.
20
6
p. 19-26
article
8
Research and development
20
6
p. 61-63
article
9
The effect of composition and exposure to external factors on the electronic structure of amorphous silicon nitride in memory devices
Domashevskaya, E.P.
20
6
p. 11-18
article
9 results found
Koninklijke Bibliotheek -
National Library of the Netherlands