nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Active compensation of systems with a single feedback loop
|
Martinez, P. |
|
1989 |
20 |
4 |
p. 31-36 6 p. |
artikel |
2 |
A digital signal processor VLSI: DSSP1
|
|
|
1989 |
20 |
4 |
p. 42- 1 p. |
artikel |
3 |
Advancing surface mount technology
|
Pitt, Keg |
|
1989 |
20 |
4 |
p. 49-50 2 p. |
artikel |
4 |
A monolithically integrated InGaAs/InP photoreceiver operating with a single 5-V power supply
|
|
|
1989 |
20 |
4 |
p. 46- 1 p. |
artikel |
5 |
Analysis of planar channeling effects on the threshold voltage uniformity of GaAs metal-semiconductor field-effect transistors using stereographic projection
|
|
|
1989 |
20 |
4 |
p. 45- 1 p. |
artikel |
6 |
A new analytical model for the GaAs MESFET in the saturation region
|
|
|
1989 |
20 |
4 |
p. 43- 1 p. |
artikel |
7 |
A new organic hybrid circuit based on an aramid/epoxy laminate
|
|
|
1989 |
20 |
4 |
p. 42- 1 p. |
artikel |
8 |
An improved self aligned silicide process for VLSI
|
Singh, Awatar |
|
1989 |
20 |
4 |
p. 11-17 7 p. |
artikel |
9 |
A process for monolithic fabrication of microlenses on integrated circuits
|
|
|
1989 |
20 |
4 |
p. 47- 1 p. |
artikel |
10 |
8-bit processors demand attention as integration, speed evolve to new levels
|
|
|
1989 |
20 |
4 |
p. 42- 1 p. |
artikel |
11 |
Detectors for monolithic optoelectronics
|
|
|
1989 |
20 |
4 |
p. 46- 1 p. |
artikel |
12 |
Development and experimental verification of a two-dimensional numerical model of piezoelectrically induced threshold voltage shifts in GaAs MESFETs
|
|
|
1989 |
20 |
4 |
p. 44- 1 p. |
artikel |
13 |
Editorial
|
Butcher, John |
|
1989 |
20 |
4 |
p. iv- 1 p. |
artikel |
14 |
Electrical properties of CdTe metal-semiconductor field effect transistors
|
|
|
1989 |
20 |
4 |
p. 45- 1 p. |
artikel |
15 |
Electron beam/optical hybrid lithography for the production of gallium arsenide monolithic microwave integrated circuits (MIMICs)
|
|
|
1989 |
20 |
4 |
p. 45- 1 p. |
artikel |
16 |
Evaluation of deep states in amorphous-silicon/silicon-nitride system from charge-coupled device characteristics
|
|
|
1989 |
20 |
4 |
p. 46- 1 p. |
artikel |
17 |
Forthcoming events
|
|
|
1989 |
20 |
4 |
p. 60- 1 p. |
artikel |
18 |
Gate-voltage dependence of source and drain series resistances and effective gate length in GaAs MESFETs
|
|
|
1989 |
20 |
4 |
p. 44- 1 p. |
artikel |
19 |
Guided-wave optical interconnects for VLSI systems
|
|
|
1989 |
20 |
4 |
p. 47- 1 p. |
artikel |
20 |
High performance microprocessor chip-set comprising sequencer, integer and floating point processors
|
|
|
1989 |
20 |
4 |
p. 43- 1 p. |
artikel |
21 |
High sensitivity 1.3 wavelength region receiver OEIC with self-aligned junction FET
|
|
|
1989 |
20 |
4 |
p. 46-47 2 p. |
artikel |
22 |
ICs: advances in the face of adversity
|
|
|
1989 |
20 |
4 |
p. 43- 1 p. |
artikel |
23 |
Internal thermal resistance of a multi-chip packaging design for VLSI-based systems
|
|
|
1989 |
20 |
4 |
p. 41- 1 p. |
artikel |
24 |
Layered imaging for subsurface features of integrated circuits by photoacoustic microcospy
|
|
|
1989 |
20 |
4 |
p. 43- 1 p. |
artikel |
25 |
Managing graphics displays using a microcontroller
|
|
|
1989 |
20 |
4 |
p. 43- 1 p. |
artikel |
26 |
Material and technological developments for OEIC emitters and receivers
|
|
|
1989 |
20 |
4 |
p. 46- 1 p. |
artikel |
27 |
Microcontroller eases I/O processing burden
|
|
|
1989 |
20 |
4 |
p. 42- 1 p. |
artikel |
28 |
Microelectronics packaging handbook
|
Pitt, Keg |
|
1989 |
20 |
4 |
p. 48-49 2 p. |
artikel |
29 |
Modeling of MODFETs
|
|
|
1989 |
20 |
4 |
p. 44- 1 p. |
artikel |
30 |
Modified current conveyors and their applications
|
Pal, K. |
|
1989 |
20 |
4 |
p. 37-40 4 p. |
artikel |
31 |
Monolithic GaAs/Si optoelectronic integrated circuits
|
|
|
1989 |
20 |
4 |
p. 46- 1 p. |
artikel |
32 |
New systems for fabrication of wafer scale interconnections in multichip packages
|
|
|
1989 |
20 |
4 |
p. 41- 1 p. |
artikel |
33 |
Noise-margin limitations on gallium-arsenide VLSI
|
|
|
1989 |
20 |
4 |
p. 44-45 2 p. |
artikel |
34 |
OEIC and the research activity of the optoelectronics joint research laboratory
|
|
|
1989 |
20 |
4 |
p. 46- 1 p. |
artikel |
35 |
Parliamentary report
|
|
|
1989 |
20 |
4 |
p. 51-55 5 p. |
artikel |
36 |
Printer controller ICs take on PDL bottlenecks
|
|
|
1989 |
20 |
4 |
p. 42- 1 p. |
artikel |
37 |
“PTF”: A review of polymer thick film technology
|
Pitt, Keg |
|
1989 |
20 |
4 |
p. 48- 1 p. |
artikel |
38 |
Rapid prototyping of multichip packages using computer-controlled, ink jet direct-write
|
|
|
1989 |
20 |
4 |
p. 41-42 2 p. |
artikel |
39 |
Research and development
|
|
|
1989 |
20 |
4 |
p. 56-59 4 p. |
artikel |
40 |
Sanyo Electric develops high performance HEMT for satellite broadcast reception
|
|
|
1989 |
20 |
4 |
p. 46- 1 p. |
artikel |
41 |
Silicon device miniaturazation and its effect on processing techniques
|
Bathaei, F.Z. |
|
1989 |
20 |
4 |
p. 1-10 10 p. |
artikel |
42 |
Some studies on mixed semiconductor thin film transistors
|
|
|
1989 |
20 |
4 |
p. 44- 1 p. |
artikel |
43 |
Sub-half micrometer gate lift-off by three layer resist process via electron beam lithography for gallium arsenide monolithic microwave integrated circuits (MIMICs)
|
|
|
1989 |
20 |
4 |
p. 45- 1 p. |
artikel |
44 |
Technology for fabrication of inverse-T gate lightly doped drain transistors with active polysilicon spacer
|
Simeonov, D. |
|
1989 |
20 |
4 |
p. 19-24 6 p. |
artikel |
45 |
The effect of drain bias upon frequency response in GaAs MESFETs
|
|
|
1989 |
20 |
4 |
p. 44- 1 p. |
artikel |
46 |
The electronics assembly handbook
|
Pitt, Keg |
|
1989 |
20 |
4 |
p. 49- 1 p. |
artikel |
47 |
The estimation of fault coverage
|
Gaviraghi, S. |
|
1989 |
20 |
4 |
p. 25-30 6 p. |
artikel |
48 |
Thermal management of a high-performance multichip module
|
|
|
1989 |
20 |
4 |
p. 41- 1 p. |
artikel |
49 |
The SCC68070: a monolithic 68000 CPU and peripherals
|
|
|
1989 |
20 |
4 |
p. 42-43 2 p. |
artikel |
50 |
Two wavelength photorefractive dynamic optical interconnect
|
|
|
1989 |
20 |
4 |
p. 47- 1 p. |
artikel |