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                                       Details for article 44 of 50 found articles
 
 
  Technology for fabrication of inverse-T gate lightly doped drain transistors with active polysilicon spacer
 
 
Title: Technology for fabrication of inverse-T gate lightly doped drain transistors with active polysilicon spacer
Author: Simeonov, D.
Goranova, E.
Balabanska, T.
Appeared in: Microelectronics journal
Paging: Volume 20 () nr. 4 pages 19-24
Year: 1989
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 44 of 50 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands