| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A behavioral model for electron irradiation effect on the DC performance in InP-based HEMT
|
Meng, S.H.
|
|
|
148 |
C |
p.
|
artikel
|
| 2 |
A compact Non-Quasi-Static small-signal model for GaN HEMT
|
Touchaei, Behnam Jafari
|
|
|
148 |
C |
p.
|
artikel
|
| 3 |
A 6-/12-dB back-off reconfigurable Doherty-like load modulated balanced amplifier with compact area and wide bandwidth
|
Que, Xianfeng
|
|
|
148 |
C |
p.
|
artikel
|
| 4 |
A 180 fps WVGA CIS with 3.2e− TRN and dual-readout modes
|
Liu, Xiaoxuan
|
|
|
148 |
C |
p.
|
artikel
|
| 5 |
A 16 Gb/s serial link transceiver with active inductor based CTLE and 3-tap DFE in 12-nm FinFET CMOS
|
Sun, Xinzhuo
|
|
|
148 |
C |
p.
|
artikel
|
| 6 |
A symmetrical fully-integrated CMOS doherty power amplifier
|
Ebazadeh, Samira
|
|
|
148 |
C |
p.
|
artikel
|
| 7 |
Editorial Board
|
|
|
|
148 |
C |
p.
|
artikel
|
| 8 |
High energy efficient and configurable CIM macro for image processing
|
Peng, Chunyu
|
|
|
148 |
C |
p.
|
artikel
|
| 9 |
Improvement of C-shaped pocket TFET with sandwiched drain for ambipolar performance and analog/RF performance
|
Xiao, Wanyang
|
|
|
148 |
C |
p.
|
artikel
|
| 10 |
Leaky-integrate-fire neuron based on vertically extended drain Si 1 − x Ge x source TFET: Ultra-energy-efficient and high speed design
|
Priyanka,
|
|
|
148 |
C |
p.
|
artikel
|
| 11 |
Novel high-voltage GaN CAVET with high threshold voltage and low reverse conduction loss
|
Luo, Chengtao
|
|
|
148 |
C |
p.
|
artikel
|
| 12 |
On the improved RF performance of step field plate LDMOS transistor
|
Patel, Rutu
|
|
|
148 |
C |
p.
|
artikel
|
| 13 |
Recent advances on reliability of FPGAs in a radiation environment
|
Liu, Zhe
|
|
|
148 |
C |
p.
|
artikel
|
| 14 |
Stability analysis and optimization of CT DSMs with an NS SAR quantizer by a redistributed noise shaping technique
|
Wang, Weihao
|
|
|
148 |
C |
p.
|
artikel
|
| 15 |
Suppressed current collapse and improved threshold voltage stability of AlGaN/GaN HEMT via O2 plasma treatment
|
Zhu, Yitai
|
|
|
148 |
C |
p.
|
artikel
|
| 16 |
Temperature rise detection in GaN high-electron-mobility transistors via gate-drain Schottky junction forward-conduction voltages
|
Huang, Xiujuan
|
|
|
148 |
C |
p.
|
artikel
|
| 17 |
Unveiling the influence of temperature and interface traps on the performance of source-all-around vertical TFET
|
Ramesh, Potharaju
|
|
|
148 |
C |
p.
|
artikel
|
| 18 |
VLSI design for adjustable compression rate in lossless/lossy compression of EEG signal
|
Yu, Haotian
|
|
|
148 |
C |
p.
|
artikel
|
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