| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A compact fifth-order SIW BPF based on TSV technology with high selectivity
|
Wang, Fengjuan
|
|
|
144 |
C |
p.
|
artikel
|
| 2 |
A 8–12 GHz power amplifier with high out-of-band rejection
|
Li, Shengqi
|
|
|
144 |
C |
p.
|
artikel
|
| 3 |
A 10-kHz BW 104.3-dB DR discrete-time delta-sigma modulator with ring-amplifier-based integrator
|
Li, Yuming
|
|
|
144 |
C |
p.
|
artikel
|
| 4 |
A 2-2 MASH ΔΣ ADC with fast-charge CLS input buffer and dual double sampling achieving 103.3-dB SNDR and ±2.5-ppm/FSR INL
|
Chen, Yang
|
|
|
144 |
C |
p.
|
artikel
|
| 5 |
A 0.55-mm2 8-bit 32-GS/s TI-SAR ADC with optimized hierarchical sampling architecture
|
Ding, Jiale
|
|
|
144 |
C |
p.
|
artikel
|
| 6 |
A 8.1-nW, 4.22-kHz, −40–85 °C relaxation oscillator with subthreshold leakage current compensation and forward body bias buffer for low power IoT applications
|
Zhou, Rong
|
|
|
144 |
C |
p.
|
artikel
|
| 7 |
Artificial neural network models for metal-ferroelectric-insulator-semiconductor ferroelectric tunnel junction memristor
|
Li, Tiancheng
|
|
|
144 |
C |
p.
|
artikel
|
| 8 |
A runtime-reconfigurable convolutional engine using tensor multiplication with multiple computing modes in 22-nm CMOS
|
Qian, Junyi
|
|
|
144 |
C |
p.
|
artikel
|
| 9 |
A 6T1C pixel circuit compensating for TFT electrical characteristics variations, voltage drop, and OLED degradation
|
Zhao, Huicheng
|
|
|
144 |
C |
p.
|
artikel
|
| 10 |
A 9T-SRAM in-memory computing macro for Boolean logic and multiply-and-accumulate operations
|
Dai, Chenghu
|
|
|
144 |
C |
p.
|
artikel
|
| 11 |
A 1.8 V 98.6 dB SNDR discrete-time CMOS delta-sigma ADC
|
Wei, Cong
|
|
|
144 |
C |
p.
|
artikel
|
| 12 |
A wideband low power RF Receiver Front-End for Internet-of-Things applications
|
Zhou, Rong
|
|
|
144 |
C |
p.
|
artikel
|
| 13 |
Comprehensive experimental study on Schottky contact super barrier rectifier
|
Yu, Qisheng
|
|
|
144 |
C |
p.
|
artikel
|
| 14 |
Demonstration of a novel Dual-Source Elevated-Channel Dopingless TFET with improved DC and Analog/RF performance
|
Ashok, Tammisetti
|
|
|
144 |
C |
p.
|
artikel
|
| 15 |
Design and analysis of a high-speed low-power comparator with regeneration enhancement and through current suppression techniques from 4 K to 300 K in 65-nm Cryo-CMOS
|
Pai, Chia-Wei
|
|
|
144 |
C |
p.
|
artikel
|
| 16 |
Editorial Board
|
|
|
|
144 |
C |
p.
|
artikel
|
| 17 |
Effect of 60Coγ ray radiation on electrical properties of SiGe HBTs at low temperatures
|
Feng, Yahui
|
|
|
144 |
C |
p.
|
artikel
|
| 18 |
Electrical characteristics assessment and noise analysis of pocket-doped multi source T-shaped gate tunnel FET
|
Kumari, Sushmita
|
|
|
144 |
C |
p.
|
artikel
|
| 19 |
High-performance montgomery modular multiplier with NTT and negative wrapped convolution
|
Ke, Hongfei
|
|
|
144 |
C |
p.
|
artikel
|
| 20 |
Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode
|
Xie, Xintong
|
|
|
144 |
C |
p.
|
artikel
|
| 21 |
Inverter-based noise-shaping SAR ADC for low-power applications
|
Badawy, Ali
|
|
|
144 |
C |
p.
|
artikel
|
| 22 |
Noninverting Schmitt trigger circuit with electronically tunable hysteresis
|
Kannaujiya, Aryan
|
|
|
144 |
C |
p.
|
artikel
|
| 23 |
Novel low loss dual-trench superjunction IGBT with semi-floating P-pillar
|
Shen, Zhigang
|
|
|
144 |
C |
p.
|
artikel
|
| 24 |
Numerical simulation of copper electrodeposition for Through Silicon Via (TSV) with SPS-PEG-Cl additive system
|
Tao, Yanan
|
|
|
144 |
C |
p.
|
artikel
|
| 25 |
Optimization of DE-QG TFET using novel CIP and DCT techniques
|
T.S., Manivannan
|
|
|
144 |
C |
p.
|
artikel
|
| 26 |
OTK-based PUF CRP obfuscation for IoT device authentication
|
Roy, Aditi
|
|
|
144 |
C |
p.
|
artikel
|
| 27 |
Physics based model development of a double gate reverse T-shaped channel TFET including 1D and 2D band-to-band tunneling components
|
Manikanta, K.
|
|
|
144 |
C |
p.
|
artikel
|
| 28 |
Reliability analysis and comparison of ring-PUF based on probabilistic models
|
Bian, Jingchang
|
|
|
144 |
C |
p.
|
artikel
|
| 29 |
Single inductor multi-PZTs SECE and electromagnetic voltage multiplier rectifier hybrid interface circuit
|
Shi, Ge
|
|
|
144 |
C |
p.
|
artikel
|
| 30 |
The area-efficient gate level information flow tracking schemes of digital circuit with multi-level security lattice
|
Chen, Yongliang
|
|
|
144 |
C |
p.
|
artikel
|
| 31 |
Variations of single event transient induced by line edge roughness (LER) and temperature in FinFET
|
Liu, Baojun
|
|
|
144 |
C |
p.
|
artikel
|
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