IBL Tool - Digital Library

Digital Library

Journal description

All volumes of the corresponding journal

All issues of the corresponding volume

All articles of the corresponding issues

31 results found

no	title	author	magazine	year	volume	issue	page(s)	type
1	A compact fifth-order SIW BPF based on TSV technology with high selectivity	Wang, Fengjuan			144	C	p.	article
2	A 8–12 GHz power amplifier with high out-of-band rejection	Li, Shengqi			144	C	p.	article
3	A 10-kHz BW 104.3-dB DR discrete-time delta-sigma modulator with ring-amplifier-based integrator	Li, Yuming			144	C	p.	article
4	A 2-2 MASH ΔΣ ADC with fast-charge CLS input buffer and dual double sampling achieving 103.3-dB SNDR and ±2.5-ppm/FSR INL	Chen, Yang			144	C	p.	article
5	A 0.55-mm2 8-bit 32-GS/s TI-SAR ADC with optimized hierarchical sampling architecture	Ding, Jiale			144	C	p.	article
6	A 8.1-nW, 4.22-kHz, −40–85 °C relaxation oscillator with subthreshold leakage current compensation and forward body bias buffer for low power IoT applications	Zhou, Rong			144	C	p.	article
7	Artificial neural network models for metal-ferroelectric-insulator-semiconductor ferroelectric tunnel junction memristor	Li, Tiancheng			144	C	p.	article
8	A runtime-reconfigurable convolutional engine using tensor multiplication with multiple computing modes in 22-nm CMOS	Qian, Junyi			144	C	p.	article
9	A 6T1C pixel circuit compensating for TFT electrical characteristics variations, voltage drop, and OLED degradation	Zhao, Huicheng			144	C	p.	article
10	A 9T-SRAM in-memory computing macro for Boolean logic and multiply-and-accumulate operations	Dai, Chenghu			144	C	p.	article
11	A 1.8 V 98.6 dB SNDR discrete-time CMOS delta-sigma ADC	Wei, Cong			144	C	p.	article
12	A wideband low power RF Receiver Front-End for Internet-of-Things applications	Zhou, Rong			144	C	p.	article
13	Comprehensive experimental study on Schottky contact super barrier rectifier	Yu, Qisheng			144	C	p.	article
14	Demonstration of a novel Dual-Source Elevated-Channel Dopingless TFET with improved DC and Analog/RF performance	Ashok, Tammisetti			144	C	p.	article
15	Design and analysis of a high-speed low-power comparator with regeneration enhancement and through current suppression techniques from 4 K to 300 K in 65-nm Cryo-CMOS	Pai, Chia-Wei			144	C	p.	article
16	Editorial Board				144	C	p.	article
17	Effect of 60Coγ ray radiation on electrical properties of SiGe HBTs at low temperatures	Feng, Yahui			144	C	p.	article
18	Electrical characteristics assessment and noise analysis of pocket-doped multi source T-shaped gate tunnel FET	Kumari, Sushmita			144	C	p.	article
19	High-performance montgomery modular multiplier with NTT and negative wrapped convolution	Ke, Hongfei			144	C	p.	article
20	Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode	Xie, Xintong			144	C	p.	article
21	Inverter-based noise-shaping SAR ADC for low-power applications	Badawy, Ali			144	C	p.	article
22	Noninverting Schmitt trigger circuit with electronically tunable hysteresis	Kannaujiya, Aryan			144	C	p.	article
23	Novel low loss dual-trench superjunction IGBT with semi-floating P-pillar	Shen, Zhigang			144	C	p.	article
24	Numerical simulation of copper electrodeposition for Through Silicon Via (TSV) with SPS-PEG-Cl additive system	Tao, Yanan			144	C	p.	article
25	Optimization of DE-QG TFET using novel CIP and DCT techniques	T.S., Manivannan			144	C	p.	article
26	OTK-based PUF CRP obfuscation for IoT device authentication	Roy, Aditi			144	C	p.	article
27	Physics based model development of a double gate reverse T-shaped channel TFET including 1D and 2D band-to-band tunneling components	Manikanta, K.			144	C	p.	article
28	Reliability analysis and comparison of ring-PUF based on probabilistic models	Bian, Jingchang			144	C	p.	article
29	Single inductor multi-PZTs SECE and electromagnetic voltage multiplier rectifier hybrid interface circuit	Shi, Ge			144	C	p.	article
30	The area-efficient gate level information flow tracking schemes of digital circuit with multi-level security lattice	Chen, Yongliang			144	C	p.	article
31	Variations of single event transient induced by line edge roughness (LER) and temperature in FinFET	Liu, Baojun			144	C	p.	article

31 results found

Koninklijke Bibliotheek - National Library of the Netherlands