nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Advances in silicon-based in-sensor computing for neuromorphic vision sensors
|
Liu, Yang |
|
|
134 |
C |
p. |
artikel |
2 |
A fast transient FVF-based output capacitorless LDO with self-feedback biasing
|
Liu, Nan |
|
|
134 |
C |
p. |
artikel |
3 |
A highly reliable and low-power cross-coupled 18T SRAM cell
|
Cai, Shuo |
|
|
134 |
C |
p. |
artikel |
4 |
An on-chip integrated current sensor with high precision and large current range for smart power ICs
|
Xia, Ruirui |
|
|
134 |
C |
p. |
artikel |
5 |
A parameter self-correcting thermal network model considering IGBT module solder layer aging
|
Liu, Yulin |
|
|
134 |
C |
p. |
artikel |
6 |
Comprehensive probability method of buffer insertion based on Gaussian fitting under process variation condition
|
Wang, Xinsheng |
|
|
134 |
C |
p. |
artikel |
7 |
Distribution optimization of thermal through-silicon via for 3D chip based on thermal-mechanic coupling
|
Guan, Xiaonan |
|
|
134 |
C |
p. |
artikel |
8 |
Editorial Board
|
|
|
|
134 |
C |
p. |
artikel |
9 |
Impact of temperature variation on noise parameters and HCI degradation of Recessed Source/Drain Junctionless Gate All Around MOSFETs
|
Kumar, Alok |
|
|
134 |
C |
p. |
artikel |
10 |
Magnetoelectric memory cell based on 0.5Ba(Zr0.2Ti0.8)O3-0.5Ba0.7Ca0·3TiO3/Fe65Co35 thin films
|
Yin, Xin |
|
|
134 |
C |
p. |
artikel |
11 |
Novel SenseFET structure for VDMOS with adopting body reverse bias technique to adjust the reference current ratio
|
Han, Tian |
|
|
134 |
C |
p. |
artikel |
12 |
Quantum Effect Dependent Modelling of Short Channel Junctionless Double Gate Stack(SC-JL-DG) MOSFET for High Frequency Analog Applications
|
Udar, Prajvi |
|
|
134 |
C |
p. |
artikel |
13 |
SAMA: Self-adjusting multi-cycle approximate adder
|
Baratalipour, Elahe |
|
|
134 |
C |
p. |
artikel |
14 |
The design of Δ Σ -ADC in MEMS gyro interface ASIC
|
Tan, Jinhui |
|
|
134 |
C |
p. |
artikel |