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                                       Details for article 11 of 14 found articles
 
 
  Novel SenseFET structure for VDMOS with adopting body reverse bias technique to adjust the reference current ratio
 
 
Title: Novel SenseFET structure for VDMOS with adopting body reverse bias technique to adjust the reference current ratio
Author: Han, Tian
Zhao, Fazhan
Cai, Xiaowu
Shan, Liang
Tang, Yun
Li, Bo
Appeared in: Microelectronics journal
Paging: Volume 134 () nr. C pages p.
Year: 2023
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 11 of 14 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands