| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A 12-bit 1.25 GS/s RF sampling pipelined ADC using a bandwidth-expanded residue amplifier with bias-free gain-boost technique
|
Zhang, Chenghao
|
|
|
130 |
C |
p.
|
artikel
|
| 2 |
A 16-bit 2.5-MS/s SAR ADC with on-chip foreground calibration
|
Zhang, Xiao-Wei
|
|
|
130 |
C |
p.
|
artikel
|
| 3 |
A comparative study on performance of junctionless Bulk SiGe and Si FinFET
|
Shi, Xinlong
|
|
|
130 |
C |
p.
|
artikel
|
| 4 |
Advances in neuromorphic devices for the hardware implementation of neuromorphic computing systems for future artificial intelligence applications: A critical review
|
Ajayan, J.
|
|
|
130 |
C |
p.
|
artikel
|
| 5 |
A 33.33 Gb/s/wire pin-efficient 1.06 pJ/bit wireline transceiver based on CNRZ-5 for Chiplet in 28 nm CMOS
|
Lai, Mingche
|
|
|
130 |
C |
p.
|
artikel
|
| 6 |
A low gate charge field-plate trench MOSFET with hollow split gate structure
|
Qiao, Ming
|
|
|
130 |
C |
p.
|
artikel
|
| 7 |
Analysis on electrical parameters including temperature and interface trap charges in gate overlap Ge source step shape double gate TFET
|
Saha, Rajesh
|
|
|
130 |
C |
p.
|
artikel
|
| 8 |
An ultra-low-power highly integrated novel one-cell battery management chip for wearables
|
Wu, Kai-Kai
|
|
|
130 |
C |
p.
|
artikel
|
| 9 |
A silicon carbide high gain differential amplifier for extreme temperature applications
|
Yang, Jie
|
|
|
130 |
C |
p.
|
artikel
|
| 10 |
A very low-power discrete-time delta-sigma modulator for wireless body area network
|
Khoshkam, Z.
|
|
|
130 |
C |
p.
|
artikel
|
| 11 |
A 28V NMOS power switch and bootstrap driver with integrated PA gate driver
|
Xu, Honglin
|
|
|
130 |
C |
p.
|
artikel
|
| 12 |
Design and implementation of LTCC coreless transformers for intelligent solid-state switch
|
Lu, Yufang
|
|
|
130 |
C |
p.
|
artikel
|
| 13 |
Editorial Board
|
|
|
|
130 |
C |
p.
|
artikel
|
| 14 |
High-k field plate DeNMOS design for enhanced performance and electrothermal SOA in switching applications
|
Pali, Shraddha
|
|
|
130 |
C |
p.
|
artikel
|
| 15 |
Impact of band gap and gate dielectric engineering on novel Si0.1Ge0.9-GaAs lateral N-type charge plasma based JLTFET
|
Kumar, Kaushal
|
|
|
130 |
C |
p.
|
artikel
|
| 16 |
Impact of process-induced variability on multi-bit phase change memory devices
|
Kumari, Sudha
|
|
|
130 |
C |
p.
|
artikel
|
| 17 |
Investigation of geometrical impact on a P+ buried negative capacitance SOI FET
|
Santra, Toushik
|
|
|
130 |
C |
p.
|
artikel
|
| 18 |
Measurement method of the IGBT chip temperature fluctuation based on electrothermal model derivation
|
Li, Lie
|
|
|
130 |
C |
p.
|
artikel
|
| 19 |
Split-gate trench metal-oxide-semiconductor field effect transistor with an inverted L-shaped source region
|
Fang, Dong
|
|
|
130 |
C |
p.
|
artikel
|
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