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                             241 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A centrifuge pellet injector for ASDEX upgrade Andelfinger, C.
 1990
 41 4-6 p. 1508-1509
2 p.
 artikel
2 A comparative study of the adsorption of CH2Cl2, CH3I and CH2I2 on GaAs(100) surfaces at 300 K Francis, S.M
 1990
 41 4-6 p. 909-911
3 p.
 artikel
3 AES depth profiling on ACTFEL structures Banovec, A.
 1990
 41 4-6 p. 1437-1438
2 p.
 artikel
4 AES studies of redeposited impurities on samples exposed in the scrape-off layer of TEXTOR Banno, T
 1990
 41 4-6 p. 1489-1492
4 p.
 artikel
5 AES, XPS and SIMS characterization of YBa2Cu3O7 superconducting high T c thin films Gauzzi, A
 1990
 41 4-6 p. 870-874
5 p.
 artikel
6 Ag on p-WSe2(0001) surfaces: approaching the Schottky limit? Jaegermann, W
 1990
 41 4-6 p. 800-803
4 p.
 artikel
7 A handy and miniature sputtering apparatus Sugita, T.
 1990
 41 4-6 p. 1478-
1 p.
 artikel
8 A helium particle detector for the ALT-II pump limiter experiment Akaishi, K.
 1990
 41 4-6 p. 1549-1551
3 p.
 artikel
9 Amorphous-to-crystalline transition of selenium thin films deposited onto aluminum substrates Özenbaş, M
 1990
 41 4-6 p. 1339-1342
4 p.
 artikel
10 Analysis of CaF2Si (111) using coaxial impact-collision ion scattering spectroscopy King, B.V
 1990
 41 4-6 p. 938-940
3 p.
 artikel
11 Analysis of pump limiter action for particle removal from vacuum physics viewpoints Akaishi, K.
 1990
 41 4-6 p. 1552-1554
3 p.
 artikel
12 Angular resolved photoemission of thick chromium epitaxially grown on a FeSi (001) surface Habig, P
 1990
 41 4-6 p. 1135-1137
3 p.
 artikel
13 Anomalous valence and structural changes in intermetallic Ybx (FeCo)1−x films Weller, D
 1990
 41 4-6 p. 1166-1169
4 p.
 artikel
14 An optical investigation of diamond thin films on silicon Okano, K
 1990
 41 4-6 p. 1387-1389
3 p.
 artikel
15 A photoemission study of the BiInP(110) interface Stephens, C
 1990
 41 4-6 p. 1021-1024
4 p.
 artikel
16 Application of a chemical trap to an aluminium/chlorine etching process Braunschweig, F
 1990
 41 4-6 p. 878-879
2 p.
 artikel
17 Application of vacuum arc in the study of unipolar arcs in tokamaks Agarwal, M.S.
 1990
 41 4-6 p. 1555-1557
3 p.
 artikel
18 A resistometric study of Nb/Ta single-crystal superlattices Huang, K.H
 1990
 41 4-6 p. 1237-1240
4 p.
 artikel
19 ARUPS study of an impurity-induced stabilization of SiO2 on Si(100) Heimlich, C
 1990
 41 4-6 p. 793-795
3 p.
 artikel
20 Atomic force microscope studies of lubricant films on solid surfaces Blackman, G.S
 1990
 41 4-6 p. 1283-1286
4 p.
 artikel
21 Atomic layer growth of GaAs by molecular beam epitaxy using desorption of excess Ga atoms Sugiyama, N
 1990
 41 4-6 p. 915-918
4 p.
 artikel
22 Atomic morphology of thin films in the early stages of growth Krohn, M
 1990
 41 4-6 p. 1091-1093
3 p.
 artikel
23 Behavior of Pb deposited on single crystal surface of BiSrCaCuO Nakanishi, S.
 1990
 41 4-6 p. 992-995
4 p.
 artikel
24 Characterization of amorphous PtSi Schottky contacts on Si Solt, K
 1990
 41 4-6 p. 827-830
4 p.
 artikel
25 Characterization of AuGeNi ohmic contacts on n-GaAs using electrical measurements, Auger electron spectroscopy and X-ray diffractometry Oliveira, J.B.B
 1990
 41 4-6 p. 807-810
4 p.
 artikel
26 Characterization of multilayer reflectors for the soft X-ray region using synchrotron radiation Sakurai, M
 1990
 41 4-6 p. 1234-1236
3 p.
 artikel
27 Characterization of multilayer structures with titanium nitride and titanium silicide Panjan, P.
 1990
 41 4-6 p. 1272-1274
3 p.
 artikel
28 Characterization of Ta thin films obtained by dc sputtering Mammana, A.P
 1990
 41 4-6 p. 1403-1404
2 p.
 artikel
29 Characterization of thermally oxidized iridium oxide films Sato, Y
 1990
 41 4-6 p. 1198-1200
3 p.
 artikel
30 Collector probe measurements of metallic impurity fluxes in the divertor chamber of the ASDEX tokamak Adamson, S.
 1990
 41 4-6 p. 1545-1548
4 p.
 artikel
31 Combined resistance and temperature change measurement for the study of electromigration Sato, K
 1990
 41 4-6 p. 1229-1230
2 p.
 artikel
32 Composition of a-C/B:H films and of redeposited layers in the boronized TEXTOR tokamak Seggern, J.v
 1990
 41 4-6 p. 1486-1488
3 p.
 artikel
33 Computer experiments of initial growth kinetics of vacuum-deposited thin films Ozawa, S
 1990
 41 4-6 p. 1109-1110
2 p.
 artikel
34 Considerations on the design of a dc sputtering system concerning its application to Ta and Si deposition Silveira, M.A
 1990
 41 4-6 p. 1390-1392
3 p.
 artikel
35 Contact potential difference study of the growth of palladium on 〈111〉 fibre-textured aluminum thin films Domenicucci, A.
 1990
 41 4-6 p. 1422-1424
3 p.
 artikel
36 Contact resistance and surface composition of N - doped Al films Sacedon, J.L.
 1990
 41 4-6 p. 1215-1217
3 p.
 artikel
37 Correlation between electrical and microscopic properties of TiSi interfaces Wallart, X
 1990
 41 4-6 p. 1043-1045
3 p.
 artikel
38 Creep of thin metallic films Brotzen, F.R.
 1990
 41 4-6 p. 1287-1290
4 p.
 artikel
39 Critical currents in superconducting Mo/V and Nb/Pd multilayers de Groot, D.G
 1990
 41 4-6 p. 1244-1246
3 p.
 artikel
40 Cu and Zn films produced with an anodic vacuum arc Mausbach, M
 1990
 41 4-6 p. 1393-1395
3 p.
 artikel
41 Decomposition of diethylarsine on Si(100) surfaces: a HREELS study Strümpler, R.
 1990
 41 4-6 p. 975-977
3 p.
 artikel
42 Determination of partial RDF for GdFe amorphous film by X-ray anomalous scattering Wang, Y
 1990
 41 4-6 p. 1170-1171
2 p.
 artikel
43 Development of repeating pneumatic pellet injector Oda, Y.
 1990
 41 4-6 p. 1510-1514
5 p.
 artikel
44 Diamond-like carbon films prepared by rf plasma deposition Pan, X.-D.
 1990
 41 4-6 p. 1360-1363
4 p.
 artikel
45 Diffusion of hydrogen in low pressure chemical vapour deposited silicon nitride films Arnold Bik, W.M.
 1990
 41 4-6 p. 1055-1056
2 p.
 artikel
46 Dry etching of III–V semiconductors: influence of substrate temperature on the anisotropy and induced damage Van Daele, P
 1990
 41 4-6 p. 906-908
3 p.
 artikel
47 Dry processing in microelectronics: towards low pressure plasma technology Pichot, M
 1990
 41 4-6 p. 895-898
4 p.
 artikel
48 e-Beam electroreflectance of short-period SiGe superlattices Gell, M.A.
 1990
 41 4-6 p. 947-950
4 p.
 artikel
49 Effect of chemical state of doped Sn on the electrical properties of sputtered ITO films Kanazawa, J.
 1990
 41 4-6 p. 1463-1465
3 p.
 artikel
50 Effects of electric field on the growth of diamond by microwave plasma CVD Yugo, S.
 1990
 41 4-6 p. 1364-1367
4 p.
 artikel
51 Electrical and structural properties of Insb (111) epitaxially grown on Al2O3 (0001) Jamison, K.D.
 1990
 41 4-6 p. 1057-1058
2 p.
 artikel
52 Electrical behavior of a Bi2O3 thin film planar-type device Komorita, K
 1990
 41 4-6 p. 1221-1223
3 p.
 artikel
53 Electrical properties of heterogeneous CrSi(O,N) thin films Heinrich, A
 1990
 41 4-6 p. 1408-1410
3 p.
 artikel
54 Electrical supply circuit for electron beam evaporators Penchev, V.B.
 1990
 41 4-6 p. 1396-1399
4 p.
 artikel
55 Electromigration studies using in situ TEM electrical resistance measurements Chang, C.Y.
 1990
 41 4-6 p. 1434-1436
3 p.
 artikel
56 Electron beam-induced decomposition of MBE grown CaF2 films: an AES study Baunack, S
 1990
 41 4-6 p. 1003-1005
3 p.
 artikel
57 Electron cyclotron resonance deposition of diamond-like films Shing, Y.H
 1990
 41 4-6 p. 1368-1370
3 p.
 artikel
58 Electronic and atomic structure of a Co silicide-Si contact system Nakamura, H
 1990
 41 4-6 p. 875-877
3 p.
 artikel
59 Electrophysical properties of the surface phases of In and Cr on Si(111) Gasparov, V.A
 1990
 41 4-6 p. 1207-1210
4 p.
 artikel
60 Encapsulation of GaAs and GaAsPd in furnace annealing Molarius, J.M.
 1990
 41 4-6 p. 1029-1032
4 p.
 artikel
61 Epitaxial growth of Al on Si (100) and Si (111) by evaporation in uhv Hasan, M.-A
 1990
 41 4-6 p. 1121-1123
3 p.
 artikel
62 Epitaxial layers of indium nitride by microwave-excited metalorganic vapor phase epitaxy Wakahara, A
 1990
 41 4-6 p. 1071-1073
3 p.
 artikel
63 Experimental set-up for gas balance measurement at JET Usselmann, E.
 1990
 41 4-6 p. 1515-1518
4 p.
 artikel
64 Explaining the anomalous orientation of epitaxial gold on sodium chloride Robins, J.L
 1990
 41 4-6 p. 1094-1096
3 p.
 artikel
65 Factors influencing the adhesion of diamond coatings on cutting tools Söderberg, S.
 1990
 41 4-6 p. 1317-1321
5 p.
 artikel
66 FEM-simulation of damage in coated samples caused by wedge-shaped bodies Adamiker, M.D.
 1990
 41 4-6 p. 1310-1313
4 p.
 artikel
67 Ferroelectric Pb(Zr, Ti)O3 thin films by reactive sputtering from a metallic target Blossfeld, L
 1990
 41 4-6 p. 1428-1430
3 p.
 artikel
68 First stage of the formation of refractory metal thin films on Si(111) Azizan, M
 1990
 41 4-6 p. 1132-1134
3 p.
 artikel
69 4f level shifts of tungsten and colouration state of a-WO3 Temmink, A.
 1990
 41 4-6 p. 1144-1146
3 p.
 artikel
70 Formation of Ag single-crystalline thin films by ion implantation with N+ : Xe+ Yichen, Zhang
 1990
 41 4-6 p. 1264-1267
4 p.
 artikel
71 Formation of the Fe-stepped Si(100) interface as studied by electron spectroscopy Cherief, N
 1990
 41 4-6 p. 1350-1352
3 p.
 artikel
72 GaAs MBE growth under Ga-rich conditions studied by RHEED intensity oscillations Bosacchi, A.
 1990
 41 4-6 p. 919-922
4 p.
 artikel
73 Generation mechanisms of residual stresses in plasma-sprayed coatings Kuroda, S
 1990
 41 4-6 p. 1297-1299
3 p.
 artikel
74 Global particle balance in the TJ-I tokamak Tabares, F.L
 1990
 41 4-6 p. 1519-1522
4 p.
 artikel
75 Growth and structural characterization of single-crystal (001) oriented MoV superlattices Birch, J
 1990
 41 4-6 p. 1231-1233
3 p.
 artikel
76 Growth of ultrathin Au and Ag films on a modified Ru surface Bludau, H
 1990
 41 4-6 p. 1106-1108
3 p.
 artikel
77 Helium cryopumping system in the tandem mirror GAMMA 10 Nakashima, Y
 1990
 41 4-6 p. 1561-1564
4 p.
 artikel
78 Heterogeneous nucleation of binary alloy particles Anton, R.
 1990
 41 4-6 p. 1099-1101
3 p.
 artikel
79 High temperature superconductivity in bulk and film Chu, C.W
 1990
 41 4-6 p. 773-777
5 p.
 artikel
80 Hydrogen recycling in carbon films Michizono, S
 1990
 41 4-6 p. 1493-1496
4 p.
 artikel
81 Incipient Anderson localization in thin Pd x C1−x mixture films Carl, A
 1990
 41 4-6 p. 1183-1185
3 p.
 artikel
82 Indium interaction with GaP (110): example of an unreacted interface Chassé, Th
 1990
 41 4-6 p. 835-838
4 p.
 artikel
83 Industrial aspects of silicon molecular beam epitaxy Kibbel, H
 1990
 41 4-6 p. 929-932
4 p.
 artikel
84 Influence of plasma and ion beams on the electrical properties of n-GaAs Schottky diodes Pletschen, W
 1990
 41 4-6 p. 811-813
3 p.
 artikel
85 Influence of process gas and deposition energy on the atomic and electronic structure of diamond-like (a-C:H) films Ugolini, D.
 1990
 41 4-6 p. 1374-1377
4 p.
 artikel
86 Influence of the surface electron processes on the kinetics of silicon etching by fluorine atoms Babanov, Yu.E.
 1990
 41 4-6 p. 902-905
4 p.
 artikel
87 In situ infrared ellipsometry study of the vibrational properties, and the growth of amorphous semiconductor ultrathin films Blayo, N
 1990
 41 4-6 p. 1343-1346
4 p.
 artikel
88 In situ preparation of superconducting YBaCuO thin films on bare silicon Habermeier, H.-U
 1990
 41 4-6 p. 859-861
3 p.
 artikel
89 In situ surface investigations of YBa2Cu3O7−x epitaxial and BiCaSrCuO oriented films Gasparov, V.A.
 1990
 41 4-6 p. 989-991
3 p.
 artikel
90 Interdiffusion and compound formation in the AuPdSi thin film system Achete, C
 1990
 41 4-6 p. 824-826
3 p.
 artikel
91 Interface compound formation in Ni/In thin film couples Krausch, G.
 1990
 41 4-6 p. 1325-1326
2 p.
 artikel
92 Interface formation and epitaxy of CaF2 on CoSi2(111)Si(111) Guerfi, N
 1990
 41 4-6 p. 943-946
4 p.
 artikel
93 Interface magnetic and collective electronic modes in randomly layered metallic structures Barnaś, J.
 1990
 41 4-6 p. 1414-1415
2 p.
 artikel
94 Interface reaction of Pt-(111) Si with the substrate at 450°C Chen, Jiann-Ruey
 1990
 41 4-6 p. 1261-1263
3 p.
 artikel
95 Interface states at metal-compound semiconductor junctions Brillson, L.J
 1990
 41 4-6 p. 1016-1020
5 p.
 artikel
96 Interpretation of optical absorption peaks in Ag granular films supported by an oxidized Al substrate Dudek, J.C.
 1990
 41 4-6 p. 1469-1471
3 p.
 artikel
97 Investigation of defects in boron implanted silicon by means of p-n junction Lenhard, R
 1990
 41 4-6 p. 856-858
3 p.
 artikel
98 Ion-assisted film growth: modification of structure and chemistry Sundgren, J.-E.
 1990
 41 4-6 p. 1347-1349
3 p.
 artikel
99 Ion beam-assisted deposition for low temperature formation of coatings Wolf, G.K.
 1990
 41 4-6 p. 1308-1309
2 p.
 artikel
100 Kinetic limits to growth on (001) and (110) GaAs by OMCVD Aspnes, D.E.
 1990
 41 4-6 p. 978-981
4 p.
 artikel
101 Lanthanum silicide formation in thin LaSi multilayer films Hsu, C.C.
 1990
 41 4-6 p. 1425-1427
3 p.
 artikel
102 Laser-assisted methods for deposition, diagnostics and modification of optical thin films Schäfer, D
 1990
 41 4-6 p. 1084-1086
3 p.
 artikel
103 Layered magnetic structures: magnetoresistance due to antiparallel alignment Barnaś, J
 1990
 41 4-6 p. 1241-1243
3 p.
 artikel
104 Local characterization of ultrathin oxides on silicon wafers by scanning tunneling microscopy Vasquez de Parga, A.L.
 1990
 41 4-6 p. 784-786
3 p.
 artikel
105 Local versus non-local character of the alkali-promoted oxidation of silicon Castro, G.R.
 1990
 41 4-6 p. 787-789
3 p.
 artikel
106 Low-pressure chemical vapour deposition of silicon and germanium on silicon using contamination-minimized processing Mikoshiba, N
 1990
 41 4-6 p. 1087-1090
4 p.
 artikel
107 Low pressure chemical vapour deposition—some considerations, some models, some insights Hitchman, M.L
 1990
 41 4-6 p. 880-884
5 p.
 artikel
108 Low temperature fluxline relaxation effects in YBa2Cu3O7−δ thin films Lensink, J
 1990
 41 4-6 p. 862-863
2 p.
 artikel
109 Luminescence and semiconducting properties of plasma CVD diamond Kawarada, H.
 1990
 41 4-6 p. 885-888
4 p.
 artikel
110 Magnetic and structural behaviour of Fe/Ni and Fe/Fe1−x Ni x Becker, E
 1990
 41 4-6 p. 1416-1417
2 p.
 artikel
111 Magnetism of transition metal thin films with a nearly half-filled d band Teraoka, Y
 1990
 41 4-6 p. 1201-1203
3 p.
 artikel
112 Magnetoresistance of thin inhomogeneous gold films Carl, A
 1990
 41 4-6 p. 1195-1197
3 p.
 artikel
113 Magnetron sputtering deposited AIN waveguides: effect of the structure on optical properties Cachard, A
 1990
 41 4-6 p. 1151-1153
3 p.
 artikel
114 Measurements of the intrinsic stress in thin metal films Abermann, R.
 1990
 41 4-6 p. 1279-1282
4 p.
 artikel
115 Mechanical and electrical properties of rf sputtered LaB6 thin films on glass substrates Kajiwara, T
 1990
 41 4-6 p. 1224-1228
5 p.
 artikel
116 Mechanical properties of coated copper mirrors Scaglione, S.
 1990
 41 4-6 p. 1305-1307
3 p.
 artikel
117 Mechanical properties of hard a-C:H films Kleber, R
 1990
 41 4-6 p. 1378-1380
3 p.
 artikel
118 Mechanical properties, structure and composition of ion-plated tungsten carbide films Keller, G.
 1990
 41 4-6 p. 1294-1296
3 p.
 artikel
119 Mechanism of gallium arsenide MOCVD Nishizawa, J.
 1990
 41 4-6 p. 958-962
5 p.
 artikel
120 Mechanisms and results in MOVPE Richter, W.
 1990
 41 4-6 p. 963-964
2 p.
 artikel
121 Metastable synthesis of diamond Anthony, T.R.
 1990
 41 4-6 p. 1356-1359
4 p.
 artikel
122 Microstructural and magnetic characterization of the interfaces in Ni/C and Co/C multilayers Sella, C
 1990
 41 4-6 p. 1247-1250
4 p.
 artikel
123 Microvoids and defect chemistry at the SiSiO2 interface studied by positron annihilation depth profiling Rubloff, G.W
 1990
 41 4-6 p. 790-792
3 p.
 artikel
124 Millimeterwave silicon devices Russer, P.
 1990
 41 4-6 p. 1033-1037
5 p.
 artikel
125 Monitoring of thin film sputtering by soft X-ray emission spectroscopy Claesson, Y.
 1990
 41 4-6 p. 1275-1278
4 p.
 artikel
126 Multi-quantum well modulator arrays fabricated by gas source MBE Davies, G.J
 1990
 41 4-6 p. 923-925
3 p.
 artikel
127 Nanometer indentation measurements on metal-containing amorphous hydrogenated carbon films (MeC: H) Fryda, M.
 1990
 41 4-6 p. 1291-1293
3 p.
 artikel
128 Nature of principal scattering mechanism in well-annealed antimony thin films—analysis from thermoelectric data Das, V.Damodara
 1990
 41 4-6 p. 1405-1407
3 p.
 artikel
129 NEXAFS and photoemission investigation of the initial step of epitaxial growth of CaF2Si(111) Incoccia, L
 1990
 41 4-6 p. 941-942
2 p.
 artikel
130 Novel and selective vapor deposition processes Carlsson, J.-O
 1990
 41 4-6 p. 1077-1080
4 p.
 artikel
131 Nucleation and growth of vapor phase deposition on solid surfaces Wu, Quan-De
 1990
 41 4-6 p. 1431-1433
3 p.
 artikel
132 Observation of dislocations in GaAs by (photo)-electrochemical method Nemcsics, A
 1990
 41 4-6 p. 1012-1015
4 p.
 artikel
133 Observation of electromigration effect upon Si-MBE growth on Si(001) surface Ichikawa, M
 1990
 41 4-6 p. 933-937
5 p.
 artikel
134 One-step surface implantation and reaction by laser irradiation of multistructures deposited on Si and Ge samples Craciun, V
 1990
 41 4-6 p. 912-914
3 p.
 artikel
135 On the electronic structure of Cu ultra-thin film on α-Al2O3(0001) surfaces Guo, Qin-lin
 1990
 41 4-6 p. 1114-1117
4 p.
 artikel
136 On the growth of a metallic Ce film on SiO2 Gröning, P
 1990
 41 4-6 p. 1439-1440
2 p.
 artikel
137 On the mechanical properties of uhv-deposited Cr films and their dependence on substrate temperature, oxygen pressure and substrate material Thurner, G.
 1990
 41 4-6 p. 1300-1301
2 p.
 artikel
138 On the T 2-dependence of the electrical resistivity of Pd and PdH films Huber, R
 1990
 41 4-6 p. 1189-1191
3 p.
 artikel
139 On the use of H+ and Ar+ ions for high spatial resolution depth profiling Verhoeven, J.
 1990
 41 4-6 p. 1327-1329
3 p.
 artikel
140 Optical absorption of as-deposited indium selenide thin films Rousina, R.
 1990
 41 4-6 p. 1451-1453
3 p.
 artikel
141 Optical absorption of single phase AgGaSe2 thin films Murthy, Y.S
 1990
 41 4-6 p. 1448-1450
3 p.
 artikel
142 Optical and structural properties of e-beam evaporated TiO 2−x films Santucci, A.
 1990
 41 4-6 p. 1479-1480
2 p.
 artikel
143 Oxygen-induced surface states in YBa2Cu3O7 Calandra, C.
 1990
 41 4-6 p. 982-985
4 p.
 artikel
144 Particle pumping in TORE SUPRA Bonnel, P
 1990
 41 4-6 p. 1540-1544
5 p.
 artikel
145 Patterning of silicon wafers using the plasma jet dry etching technique Barklund, A.M
 1990
 41 4-6 p. 899-901
3 p.
 artikel
146 Patterning with the use of ion-assisted selective deposition Gelin, B
 1990
 41 4-6 p. 1074-1076
3 p.
 artikel
147 Pattern marking on synthetic diamond film by Penning discharge sputtering Sugita, T.
 1990
 41 4-6 p. 1371-1373
3 p.
 artikel
148 Phase differences in RHEED oscillations of various beams during epitaxial growth of GaAs(100) by MBE Resh, J.S.
 1990
 41 4-6 p. 1052-1053
2 p.
 artikel
149 Phase sequence of silicide formation at metal-silicon interfaces Pretorius, R
 1990
 41 4-6 p. 1038-1042
5 p.
 artikel
150 Photoemission efficiency and persistence of (Cs, F) and (Cs, O) activated GaAs(110) Weissman, E
 1990
 41 4-6 p. 1006-1008
3 p.
 artikel
151 Photolytic silicon nitride deposition for gallium arsenide by 193 nm excimer laser radiation Eisele, K.M
 1990
 41 4-6 p. 1081-1083
3 p.
 artikel
152 Photoreflectance and photoluminescence characterization of GaAs grown on Si Teng, Da
 1990
 41 4-6 p. 926-928
3 p.
 artikel
153 Preparation and characterization of ZnTe/CdSe solar cells Pal, A.K
 1990
 41 4-6 p. 1460-1462
3 p.
 artikel
154 Preparation and optical properties of plasma polymer silver composite films Heilmann, A.
 1990
 41 4-6 p. 1472-1475
4 p.
 artikel
155 Preparation of AIN films by planar magnetron sputtering system with facing two targets Tominaga, K
 1990
 41 4-6 p. 1154-1156
3 p.
 artikel
156 Preparation of lead sulfide thin films by the atomic layer epitaxy process Leskelä, M.
 1990
 41 4-6 p. 1457-1459
3 p.
 artikel
157 Preparation of SrSe thin films by hot wall deposition Nakanishi, Y.
 1990
 41 4-6 p. 1454-1456
3 p.
 artikel
158 Preparation of zinc sulphoselenide alloys using MBE Benyezzar, M
 1990
 41 4-6 p. 842-846
5 p.
 artikel
159 Properties of Cu thin films formed selectively on n-GaAs by projection patterned laser doping Sugioka, K
 1990
 41 4-6 p. 1258-1260
3 p.
 artikel
160 Proximity effect in superconducting multilayers Aarts, J.
 1990
 41 4-6 p. 1476-1480
5 p.
 artikel
161 p-type overdoping at clean Si(111) surfaces upon vacuum annealing Bensalah, S
 1990
 41 4-6 p. 851-852
2 p.
 artikel
162 Quantum size effect detected by work function measurements during indium deposition on polycrystalline, texturized gold substrate Marliere, C
 1990
 41 4-6 p. 1192-1194
3 p.
 artikel
163 Quantum transport in thin films and inversion layers Kramer, B
 1990
 41 4-6 p. 1179-1182
4 p.
 artikel
164 Rapid formation of ultra-thin dielectrics by Si surface modification using a large area low energy electron beam Du, Y.C
 1990
 41 4-6 p. 796-799
4 p.
 artikel
165 Recent advances in thin films for magneto-optic recording Klahn, S.
 1990
 41 4-6 p. 1160-1165
6 p.
 artikel
166 Recent applications of compositional depth profiling by secondary ion mass spectrometry Jackman, J.A.
 1990
 41 4-6 p. 1330-1334
5 p.
 artikel
167 Remote maintenance of in-vessel components in Tokamak Fusion Test Reactor Loesser, G.D
 1990
 41 4-6 p. 1523-1527
5 p.
 artikel
168 Removal of elemental arsenic by water from the GaAs surface Belyi, V.I
 1990
 41 4-6 p. 821-823
3 p.
 artikel
169 Role of interface gap states during the formation of the FeGaAs(110) Schottky barrier Cimino, R.
 1990
 41 4-6 p. 1062-1063
2 p.
 artikel
170 Room temperature disilane adsorption on Si(111) and Ge(111) studied by UPS: a comparative study Ringeisen, F
 1990
 41 4-6 p. 892-894
3 p.
 artikel
171 Selected-area deposition of diamond films Kobashi, K.
 1990
 41 4-6 p. 1383-1386
4 p.
 artikel
172 Sensor head for measurement of stress anisotropy in thin films Hornauer, H.
 1990
 41 4-6 p. 1302-1304
3 p.
 artikel
173 Silicidation of patterned narrow area of porous silicon Yamama, A
 1990
 41 4-6 p. 1254-1257
4 p.
 artikel
174 Silicon-on-insulator: materials aspects and technological applications Bomchil, G
 1990
 41 4-6 p. 781-783
3 p.
 artikel
175 SnO2Si(100) interface da Cunha, S.P.
 1990
 41 4-6 p. 1053-1055
3 p.
 artikel
176 Soft X-ray spectroscopy (SXS) study of electronic and atomic structures of a Ni silicide-Si system Iwami, M
 1990
 41 4-6 p. 1046-1047
2 p.
 artikel
177 Solid state reactions and diffusion processes in metal - Si3N4 - Si thin film systems—a comparison between Cr, Co and Ni metals Edelman, F
 1990
 41 4-6 p. 1268-1271
4 p.
 artikel
178 Spectral response of AgCsxO thin films Wu, Quan-De
 1990
 41 4-6 p. 1141-1143
3 p.
 artikel
179 Spin-resolved core and valence electron photoemission from non-epitaxially grown Pb layers on Pt(111) Vogt, B
 1990
 41 4-6 p. 1118-1120
3 p.
 artikel
180 Sputtered magnetic films for rigid disk production Cord, B.
 1990
 41 4-6 p. 1176-1178
3 p.
 artikel
181 STM on polycrystalline thin films Reiss, G.
 1990
 41 4-6 p. 1322-1324
3 p.
 artikel
182 Stress and microstructure relationships in gold thin films Kebabi, B.
 1990
 41 4-6 p. 1353-1355
3 p.
 artikel
183 Structural and magnetic characteristics of Eu/Mn and Eu/Yb superlattices prepared by the MBE technique Maeda, A.
 1990
 41 4-6 p. 1251-1253
3 p.
 artikel
184 Structural, magnetic and electronic properties of non-equilibrium FeAg alloys Sumiyama, K
 1990
 41 4-6 p. 1211-1214
4 p.
 artikel
185 Structural, optical and electronical properties of mixed dielectric films Thielsch, R
 1990
 41 4-6 p. 1147-1150
4 p.
 artikel
186 Structural properties of Bi on GaAs(110) and InP(110) studied by Raman spectroscopy and LEED Hünermann, M.
 1990
 41 4-6 p. 1063-1064
2 p.
 artikel
187 Structural studies of amorphous semiconductor-metal alloys Edwards, A.M.
 1990
 41 4-6 p. 1335-1338
4 p.
 artikel
188 Structure and ohmic behaviour of gold-chromium thin films obtained by controlled coevaporation Lechevallier, L
 1990
 41 4-6 p. 1218-1220
3 p.
 artikel
189 Structure and optical properties of AuCr sputtered films used in digital optical recording media Sella, C.
 1990
 41 4-6 p. 1172-1175
4 p.
 artikel
190 Structure and optical properties of CuGaSe2 thin films Swamy, H.G
 1990
 41 4-6 p. 1445-1447
3 p.
 artikel
191 Structures and properties of a Ta2O5 thin film deposited by dc magnetron reactive sputtering in a pure O2 atmosphere Guoping, Chen
 1990
 41 4-6 p. 1204-1206
3 p.
 artikel
192 Studies of some wide band gap II–VI semiconductor based p-n junctions Chaudhuri, S.
 1990
 41 4-6 p. 853-855
3 p.
 artikel
193 Substrate temperature-induced changeover from homogeneous to step nucleated growth modes for the initial thermal oxidation of Si(001) by O2 Kubler, L
 1990
 41 4-6 p. 1124-1127
4 p.
 artikel
194 Superconducting thin films of n-type copper oxide prepared by rf magnetron sputtering Setsune, K
 1990
 41 4-6 p. 864-866
3 p.
 artikel
195 Surface and interface study of molybdenum evaporated on NiO(100) surfaces Bourgeois, S
 1990
 41 4-6 p. 1097-1098
2 p.
 artikel
196 Surface decomposition mechanism of the novel precursor bistrimethylamine aluminium hydride on GaAs (100) Wee, A.T.S
 1990
 41 4-6 p. 968-971
4 p.
 artikel
197 Surface electronic structure of the 83 K superconductor Bi2Sr2CaCu2O8 Claessen, R
 1990
 41 4-6 p. 986-988
3 p.
 artikel
198 Surface properties of Al0.07Ga0.3As(100) studied by XPS and ARUPS Dong, G.S.
 1990
 41 4-6 p. 1058-1059
2 p.
 artikel
199 Surface recombination velocity of CdS(1120) interfaces with metals Rosenwaks, Y
 1990
 41 4-6 p. 1009-1011
3 p.
 artikel
200 Synergistic effects in radiation-induced particle ejection from solid surfaces Itoh, Noriaki
 1990
 41 4-6 p. 1558-1560
3 p.
 artikel
201 Temperature dependence of surface plasmon-polaritons on silver Tillin, M.D.
 1990
 41 4-6 p. 1186-1188
3 p.
 artikel
202 Temperature-dependent Cu interface growth on GaP(110) via Auger lineshape and X-ray photoemission spectroscopies Sancrotti, M.
 1990
 41 4-6 p. 1064-1065
2 p.
 artikel
203 Temperature-dependent interface formation study of aluminium on GaP(110) Alonso, M
 1990
 41 4-6 p. 1025-1028
4 p.
 artikel
204 The adsorption of triethylgallium on GaAs (100) at 300 K Buhaenko, D.S
 1990
 41 4-6 p. 972-974
3 p.
 artikel
205 The chemisorption of SiCl4, Si2Cl6 and chlorine on Si(111) 7 × 7 Whitman, L.J.
 1990
 41 4-6 p. 1056-1057
2 p.
 artikel
206 The decomposition of trumethylgallium, triethylgallium and trimethylaluminum on Si(100) Gow, T.R
 1990
 41 4-6 p. 951-954
4 p.
 artikel
207 The effect of the metal-semiconductor interface on the barrier height in GaAs Schottky junctions Horváth, Zs.J
 1990
 41 4-6 p. 804-806
3 p.
 artikel
208 The effects of cluster size-dependent aggregation on thin film formation Stone, C.A
 1990
 41 4-6 p. 1111-1113
3 p.
 artikel
209 The electronic structure of (NH4)2Sx treated GaAs(100) surface studied by UPS and XPS Jin, X.
 1990
 41 4-6 p. 1061-1062
2 p.
 artikel
210 The epitaxial growth on CaF2 and BaF2 single-crystal films on a sapphire substrate Barkai, M
 1990
 41 4-6 p. 847-850
4 p.
 artikel
211 The formation of the Gd-Si(111)7×7 interface and the enhanced oxidation of Si: a study with AES, EELS and LEED Henle, W.A
 1990
 41 4-6 p. 814-817
4 p.
 artikel
212 The friction coefficient of hydrogenated surfaces of polycrystalline graphite Paulmier, D.
 1990
 41 4-6 p. 1314-1316
3 p.
 artikel
213 The growth of sputter-deposited silver-copper films Barber, Z.H
 1990
 41 4-6 p. 1102-1105
4 p.
 artikel
214 The hardness and Young's modulus of a-C:H films Jiang, X
 1990
 41 4-6 p. 1381-1382
2 p.
 artikel
215 The influence of the substrate temperature on the formation of buried epitaxial CoSi2 by ion implantation Radermacher, K
 1990
 41 4-6 p. 1049-1051
3 p.
 artikel
216 The influence of the surface treatment and edge protection on the noise level in AuSi surface barrier gamma detectors Stojanović, M.S
 1990
 41 4-6 p. 818-820
3 p.
 artikel
217 The mechanism for photoconductive response of B-implanted and annealed InGaAs layers Kimura, T
 1990
 41 4-6 p. 1138-1140
3 p.
 artikel
218 The mechanism of atomic layer epitaxy of GaAs using trimethylgallium and arsine Watanabe, A.
 1990
 41 4-6 p. 965-967
3 p.
 artikel
219 The optical properties of GeO2, ZnS and Ge films produced by rf sputtering Boháč, P
 1990
 41 4-6 p. 1466-1468
3 p.
 artikel
220 Thermal diffusion in AuWTiPd metallization on silicon Milosavljević, M
 1990
 41 4-6 p. 831-834
4 p.
 artikel
221 Thermal loads on tokamak plasma-facing components during normal operation and disruptions McGrath, R.T.
 1990
 41 4-6 p. 1528-1539
12 p.
 artikel
222 The structural changes in the oxide films of tin caused by oxidation Nakanishi, Y
 1990
 41 4-6 p. 1157-1159
3 p.
 artikel
223 The thermal decomposition of triethylgallium on GaAs(100) Murrell, A.J.
 1990
 41 4-6 p. 955-957
3 p.
 artikel
224 The vacuum and gas inlet systems for the RFX fusion experiment Bonizzoni, G.
 1990
 41 4-6 p. 1503-1507
5 p.
 artikel
225 The vacuum and tritium systems for the fusion experiment ignitor Bonizzoni, G.
 1990
 41 4-6 p. 1565-1568
4 p.
 artikel
226 Thickness dependent migration of Au films Peto̊, G
 1990
 41 4-6 p. 1128-1131
4 p.
 artikel
227 Thin film preparations by low energy ion beams Yamada, Isao
 1990
 41 4-6 p. 889-891
3 p.
 artikel
228 Thin film sputter deposition for hybrid applications Muralt, P.
 1990
 41 4-6 p. 1400-1402
3 p.
 artikel
229 11th international vacuum congress 1990
 41 4-6 p. 1571-1575
5 p.
 artikel
230 Tore SUPRA first wall conditioning Gauthier, E.
 1990
 41 4-6 p. 1569-1570
2 p.
 artikel
231 Transport processes in plasma assisted deposition of superconducting thin films Athavale, S
 1990
 41 4-6 p. 867-869
3 p.
 artikel
232 Tribological and protective coatings Störi, H.
 1990
 41 4-6 p. 1477-
1 p.
 artikel
233 Tritium storage plant based on a combination of St707 and St737 getter alloy beds for high field fusion machines Bonizzoni, G.
 1990
 41 4-6 p. 1500-1502
3 p.
 artikel
234 Ultrathin films of CuCl on TiO2(110): electronic structure and surface reconstruction Wu, Ming-cheng
 1990
 41 4-6 p. 1418-1421
4 p.
 artikel
235 Unexpected structure in Rh films on Ag(100): implications for magnetic films on noble-metal substrates Schmitz, P.J.
 1990
 41 4-6 p. 1411-1413
3 p.
 artikel
236 Use of synchrotron radiation for X-ray lithography and semiconductor materials characterization Matsui, J.
 1990
 41 4-6 p. 996-1002
7 p.
 artikel
237 Vacuum system concepts for NET and ITER Fauser, F
 1990
 41 4-6 p. 1497-1499
3 p.
 artikel
238 Wall conditioning techniques for fusion devices Wienhold, P.
 1990
 41 4-6 p. 1483-1485
3 p.
 artikel
239 X-ray photoemission spectroscopy studies of III–V compounds prepared by atomic layer epitaxy Kodama, K.
 1990
 41 4-6 p. 1060-
1 p.
 artikel
240 X-ray reflectometer for study of polymer thin films and interfaces Foster, M.
 1990
 41 4-6 p. 1441-1444
4 p.
 artikel
241 Yb interface growth on GaP(110): an electron spectroscopy investigation Duó, L.
 1990
 41 4-6 p. 1065-1067
3 p.
 artikel
                             241 gevonden resultaten
 
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