| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
5320. Absorption intensity measurements of the first overtone band of CO
|
|
|
1982
|
32 |
12 |
p. 765-
1 p.
|
artikel
|
| 2 |
5407. A calibration technique for a computer-controlled photoelectron spectrometer
|
|
|
1982
|
32 |
12 |
p. 774-
1 p.
|
artikel
|
| 3 |
5382. Acceptor implantation in Fe-doped, semi-insulating indium phosphide
|
|
|
1982
|
32 |
12 |
p. 772-
1 p.
|
artikel
|
| 4 |
5321. A comparison of the collision-induced light scattering by argon and by isotropic molecular gases
|
|
|
1982
|
32 |
12 |
p. 765-
1 p.
|
artikel
|
| 5 |
5413. Adhesion and deformation properties of clean and characterized metal micro-contacts
|
|
|
1982
|
32 |
12 |
p. 775-
1 p.
|
artikel
|
| 6 |
5409. Adsorption of ammonia on Pt{001}
|
|
|
1982
|
32 |
12 |
p. 774-
1 p.
|
artikel
|
| 7 |
5261. Adsorption of molecular nitrogen on copper clusters and nickel films at 7 K
|
|
|
1982
|
32 |
12 |
p. 759-760
2 p.
|
artikel
|
| 8 |
5276. A horizontal quench furnace system for studies of gas-solid reactions at high temperature
|
|
|
1982
|
32 |
12 |
p. 761-
1 p.
|
artikel
|
| 9 |
Al alloy-ceramic ultrahigh vacuum and cryogenic feedthrough useful from dc to 6.5 GHz
|
Ishimaru, Hajime
|
|
1982
|
32 |
12 |
p. 753-755
3 p.
|
artikel
|
| 10 |
5362. Aluminium diffusion in ion-implanted noble metals
|
|
|
1982
|
32 |
12 |
p. 770-
1 p.
|
artikel
|
| 11 |
5328. A method for measuring fast time evolutions of the plasma potential by means of a simple emissive probe
|
|
|
1982
|
32 |
12 |
p. 766-
1 p.
|
artikel
|
| 12 |
A multichannel flash tube implemented for large area annealing of ion implanted semiconductors
|
Lue, Juh Tzeng
|
|
1982
|
32 |
12 |
p. 713-718
6 p.
|
artikel
|
| 13 |
An analytical approach for calculating vacuum properties of outgassing tubing systems
|
Hamacher, H
|
|
1982
|
32 |
12 |
p. 729-733
5 p.
|
artikel
|
| 14 |
5312. An appendix to the paper ‘T e determination in low-density plasmas from the He I 3889 Å and 5016 Å line intensities’
|
|
|
1982
|
32 |
12 |
p. 764-
1 p.
|
artikel
|
| 15 |
An automatic thin-film thickness indicator implemented with a Z-80 microcomputer
|
Lue, Juh Tzeng
|
|
1982
|
32 |
12 |
p. 711-712
2 p.
|
artikel
|
| 16 |
5400. An electron cyclotron maser for nanosecond megawatt pulses
|
|
|
1982
|
32 |
12 |
p. 773-
1 p.
|
artikel
|
| 17 |
5280. A new low temperature III-V multilayer growth technique: Vacuum metalorganic chemical vapor deposition
|
|
|
1982
|
32 |
12 |
p. 761-
1 p.
|
artikel
|
| 18 |
5381. An experimental study of TipSi MIS type Schottky barriers
|
|
|
1982
|
32 |
12 |
p. 772-
1 p.
|
artikel
|
| 19 |
5429. Angle-integrated sticking probabilities: N2, H2 and D2 on W{001}
|
|
|
1982
|
32 |
12 |
p. 776-777
2 p.
|
artikel
|
| 20 |
5260. Angle-resolved thermal desorption of N2 from W310 and W110
|
|
|
1982
|
32 |
12 |
p. 759-
1 p.
|
artikel
|
| 21 |
Angular distribution and sputtering yield of Al and Al2O3 during 40 key argon ion bombardment
|
Orlinov, V
|
|
1982
|
32 |
12 |
p. 747-752
6 p.
|
artikel
|
| 22 |
5401. An injection system for CHEER
|
|
|
1982
|
32 |
12 |
p. 773-
1 p.
|
artikel
|
| 23 |
5346. An investigation into silicon doping of MBE (100) GaAs
|
|
|
1982
|
32 |
12 |
p. 768-
1 p.
|
artikel
|
| 24 |
5342. Annealing of zinc-diffused GaAs
|
|
|
1982
|
32 |
12 |
p. 768-
1 p.
|
artikel
|
| 25 |
5309. Anode spots and cathodic plasma flow in a vacuum arc
|
|
|
1982
|
32 |
12 |
p. 764-
1 p.
|
artikel
|
| 26 |
5305. A note on the creation of condensation nuclei by negative corona discharges in air at low pressure
|
|
|
1982
|
32 |
12 |
p. 764-
1 p.
|
artikel
|
| 27 |
5324. Antenna patterns in electron-proton scattering
|
|
|
1982
|
32 |
12 |
p. 766-
1 p.
|
artikel
|
| 28 |
5379. An XPS study of ion-reduced dissociation on metal carbonate surfaces
|
|
|
1982
|
32 |
12 |
p. 771-
1 p.
|
artikel
|
| 29 |
5347. A photoluminescence study of beryllium-doped GaAs grown by molecular beam epitaxy
|
|
|
1982
|
32 |
12 |
p. 768-
1 p.
|
artikel
|
| 30 |
5405. Application of dynamic emittance matching to secondary ion mass spectrometry
|
|
|
1982
|
32 |
12 |
p. 774-
1 p.
|
artikel
|
| 31 |
5423. Applications of ion scattering in surface analysis
|
|
|
1982
|
32 |
12 |
p. 776-
1 p.
|
artikel
|
| 32 |
5394. A pulsed molecular beam source
|
|
|
1982
|
32 |
12 |
p. 773-
1 p.
|
artikel
|
| 33 |
5270. A simple automatic power-supply for titanium sublimation pump
|
|
|
1982
|
32 |
12 |
p. 760-
1 p.
|
artikel
|
| 34 |
A simple model for the lowest excited states of a-CO W(100) : application to electron stimulated desorption
|
Rubio, J
|
|
1982
|
32 |
12 |
p. 719-722
4 p.
|
artikel
|
| 35 |
A simple SEM specimen holder for use in sputtering yield measurements
|
Jaehger, Mogens
|
|
1982
|
32 |
12 |
p. 757-
1 p.
|
artikel
|
| 36 |
5369. A study of the strain in the damaged surface layer of V3Si after 2.0-MeV He-ion implantation
|
|
|
1982
|
32 |
12 |
p. 770-
1 p.
|
artikel
|
| 37 |
5430. Atomic exchange potentials and angle resolved photoemission
|
|
|
1982
|
32 |
12 |
p. 777-
1 p.
|
artikel
|
| 38 |
5341. Automated analyzer for aircraft measurements of atmospheric methane and total hydrocarbons
|
|
|
1982
|
32 |
12 |
p. 767-768
2 p.
|
artikel
|
| 39 |
5365. Caesium colloids in additively doped caesium halides: kinetics of precipitation and growth
|
|
|
1982
|
32 |
12 |
p. 770-
1 p.
|
artikel
|
| 40 |
5378. Characteristics of submicron pores obtained by chemical etching of nuclear tracks in polycarbonate films
|
|
|
1982
|
32 |
12 |
p. 771-
1 p.
|
artikel
|
| 41 |
5411. Chemisorption on plasma-grown aluminium oxide: a study using inelastic electron tunnelling spectroscopy
|
|
|
1982
|
32 |
12 |
p. 774-
1 p.
|
artikel
|
| 42 |
5258. Chlorine adsorption on the Ta(110) surface
|
|
|
1982
|
32 |
12 |
p. 759-
1 p.
|
artikel
|
| 43 |
5392. Chromatic aberration electron monochromator
|
|
|
1982
|
32 |
12 |
p. 772-773
2 p.
|
artikel
|
| 44 |
5358. Comparison of characterization methods for As-doped silicon
|
|
|
1982
|
32 |
12 |
p. 769-
1 p.
|
artikel
|
| 45 |
5355. Compensation in Ge-doped p-type Ga1-x Al xAs grown by liquid phase epitaxy
|
|
|
1982
|
32 |
12 |
p. 769-
1 p.
|
artikel
|
| 46 |
5402. Convenient fast pulsed molecular beam valve
|
|
|
1982
|
32 |
12 |
p. 773-
1 p.
|
artikel
|
| 47 |
5420. Defect states on the surface of WO3
|
|
|
1982
|
32 |
12 |
p. 776-
1 p.
|
artikel
|
| 48 |
5284. Deposition kinetics of SiO2 film
|
|
|
1982
|
32 |
12 |
p. 762-
1 p.
|
artikel
|
| 49 |
5337. Derivation of the effect of atmospheric and aerosol emissions on IR imaging device performance
|
|
|
1982
|
32 |
12 |
p. 767-
1 p.
|
artikel
|
| 50 |
5384. Design and calibration of the fast ion diagnostic experiment detector on the poloidal divertor experiment
|
|
|
1982
|
32 |
12 |
p. 772-
1 p.
|
artikel
|
| 51 |
5278. Determination of spatial distributions of thickness and optical constants of thin films by a new optical technique
|
|
|
1982
|
32 |
12 |
p. 761-
1 p.
|
artikel
|
| 52 |
5297. Determination of the H distribution in reactively sputtered amorphous silicon-hydrogen alloys by proton nuclear magnetic resonance
|
|
|
1982
|
32 |
12 |
p. 763-
1 p.
|
artikel
|
| 53 |
5313. Determination of the Penning excitation cross-sections of individual Cd(II) states for He metastable atoms using Penning electron spectroscopy
|
|
|
1982
|
32 |
12 |
p. 764-765
2 p.
|
artikel
|
| 54 |
5277. Determining the optical constants of vacuum evaporated II-VI compound thin films with optical waveguides
|
|
|
1982
|
32 |
12 |
p. 761-
1 p.
|
artikel
|
| 55 |
5339. Differential backscatter from the atmospheric aerosol: the implications for IR differential absorption lidar
|
|
|
1982
|
32 |
12 |
p. 767-
1 p.
|
artikel
|
| 56 |
5385. Digital technique for the study of narrow structure in electron-atom and electron-molecule scattering
|
|
|
1982
|
32 |
12 |
p. 772-
1 p.
|
artikel
|
| 57 |
5274. Direct coupling of a dense (supercritical) gas chromatograph to a mass spectrometer using a supersonic molecular beam interface
|
|
|
1982
|
32 |
12 |
p. 761-
1 p.
|
artikel
|
| 58 |
5377. Displacement criterion for amorphization of silicon during ion implantation
|
|
|
1982
|
32 |
12 |
p. 771-
1 p.
|
artikel
|
| 59 |
5323. Effective swarm parameters and transport coefficients in CO2 laser mixtures
|
|
|
1982
|
32 |
12 |
p. 765-766
2 p.
|
artikel
|
| 60 |
5376. Effect of forming gas anneal on Al-SiO2 internal photoemission characteristics
|
|
|
1982
|
32 |
12 |
p. 771-
1 p.
|
artikel
|
| 61 |
5373. Effects of rf power and reactant gas pressure on plasma deposited amorphous hydrogenated silicon
|
|
|
1982
|
32 |
12 |
p. 771-
1 p.
|
artikel
|
| 62 |
5338. Effects of variation in cloudiness and stratospheric aerosol scattering upon tropospheric UV flux, photolysis rates, and the ozone urban plume
|
|
|
1982
|
32 |
12 |
p. 767-
1 p.
|
artikel
|
| 63 |
5287. Electrical properties of epitaxial indium phosphide films grown by metalorganic chemical vapour deposition
|
|
|
1982
|
32 |
12 |
p. 762-
1 p.
|
artikel
|
| 64 |
5293. Electrical resistivity and structure of thin nickel films—effect of annealing
|
|
|
1982
|
32 |
12 |
p. 763-
1 p.
|
artikel
|
| 65 |
5363. Electrochemical sulfur doping of GaAs grown by molecular beam epitaxy
|
|
|
1982
|
32 |
12 |
p. 770-
1 p.
|
artikel
|
| 66 |
5426. Electron-beam-induced decomposition of ion bombarded calcium fluoride surfaces
|
|
|
1982
|
32 |
12 |
p. 776-
1 p.
|
artikel
|
| 67 |
5425. Electron emission from ion-bombarded aluminium
|
|
|
1982
|
32 |
12 |
p. 776-
1 p.
|
artikel
|
| 68 |
5307. Electron energy distribution in CO and HeCO discharges: II
|
|
|
1982
|
32 |
12 |
p. 764-
1 p.
|
artikel
|
| 69 |
5419. Electron loss studies of the silica surface
|
|
|
1982
|
32 |
12 |
p. 775-
1 p.
|
artikel
|
| 70 |
5317. Electron swarm parameters in argon and krypton
|
|
|
1982
|
32 |
12 |
p. 765-
1 p.
|
artikel
|
| 71 |
5315. Enhancement of DC positive streamer corona in a point-plane gap in air due to addition of a small amount of an electronegative gas
|
|
|
1982
|
32 |
12 |
p. 765-
1 p.
|
artikel
|
| 72 |
Excited atom emission from metals under ion bombardment
|
Pazdzersky, VA
|
|
1982
|
32 |
12 |
p. 723-728
6 p.
|
artikel
|
| 73 |
5427. Experimental determination of the particle reflection coefficients of low-energy (100–1500 eV) 3He and 4He atoms from the (110) plane of tungsten
|
|
|
1982
|
32 |
12 |
p. 776-
1 p.
|
artikel
|
| 74 |
5311. Experiment on the relation between discharge noise and light output in HeNe plasmas
|
|
|
1982
|
32 |
12 |
p. 764-
1 p.
|
artikel
|
| 75 |
5334. Fall regions and electrode effects in atmospheric arcs of vanishing length
|
|
|
1982
|
32 |
12 |
p. 767-
1 p.
|
artikel
|
| 76 |
5279. Field-effect studies on Cu-doped p-type Te film metal-insulatorsemiconductor structures
|
|
|
1982
|
32 |
12 |
p. 761-
1 p.
|
artikel
|
| 77 |
5406. Field emission thermal desorption spectroscopy
|
|
|
1982
|
32 |
12 |
p. 774-
1 p.
|
artikel
|
| 78 |
5351. Formation of Al-nitride films at room temperature by nitrogen ion implantation into aluminium
|
|
|
1982
|
32 |
12 |
p. 769-
1 p.
|
artikel
|
| 79 |
5268. Free-electron Čerenkov laser
|
|
|
1982
|
32 |
12 |
p. 760-
1 p.
|
artikel
|
| 80 |
5398. Further aspects of spatial separation of molecules in a molecular beam by inhomogeneous electrostatic fields
|
|
|
1982
|
32 |
12 |
p. 773-
1 p.
|
artikel
|
| 81 |
5360. Growth of Sb and InSb by molecular-beam epitaxy
|
|
|
1982
|
32 |
12 |
p. 769-
1 p.
|
artikel
|
| 82 |
5283. Growth of tungsten single-crystal films deposited on MgO(100) substrate
|
|
|
1982
|
32 |
12 |
p. 762-
1 p.
|
artikel
|
| 83 |
5296. Hexagonal WSi2 in cosputtered (tungsten and silicon) mixture
|
|
|
1982
|
32 |
12 |
p. 763-
1 p.
|
artikel
|
| 84 |
5386. High efficiency ion beam accelerator system
|
|
|
1982
|
32 |
12 |
p. 772-
1 p.
|
artikel
|
| 85 |
5286. High-purity ZnSe obtained by metalorganic chemical vapour deposition epitaxy
|
|
|
1982
|
32 |
12 |
p. 762-
1 p.
|
artikel
|
| 86 |
5389. High repetition rate pulsed nozzle beam source
|
|
|
1982
|
32 |
12 |
p. 772-
1 p.
|
artikel
|
| 87 |
5303. High resistance mode in a modified Penning discharge
|
|
|
1982
|
32 |
12 |
p. 764-
1 p.
|
artikel
|
| 88 |
5275. High temperature ultrahigh vacuum infrared window seal
|
|
|
1982
|
32 |
12 |
p. 761-
1 p.
|
artikel
|
| 89 |
High voltage vacuum insulation ‘The Physical Basis’
|
Chatterton, PA
|
|
1982
|
32 |
12 |
p. 784-
1 p.
|
artikel
|
| 90 |
5388. Hollow cathode discharge as a plasma source for H− production
|
|
|
1982
|
32 |
12 |
p. 772-
1 p.
|
artikel
|
| 91 |
5393. Improved source of cold plasma electrons and negative ions
|
|
|
1982
|
32 |
12 |
p. 773-
1 p.
|
artikel
|
| 92 |
5428. Initial oxidation kinetics on cylindrical crystals
|
|
|
1982
|
32 |
12 |
p. 776-
1 p.
|
artikel
|
| 93 |
5349. Ion beam induced atomic distribution of implanted range profiles (the system Ne→Ge/Si)
|
|
|
1982
|
32 |
12 |
p. 768-
1 p.
|
artikel
|
| 94 |
5325. Ion-electrostatic instabilities in current-carrying magnetized plasmas
|
|
|
1982
|
32 |
12 |
p. 766-
1 p.
|
artikel
|
| 95 |
5383. Ion optics improvements to a multiple aperture ion source
|
|
|
1982
|
32 |
12 |
p. 772-
1 p.
|
artikel
|
| 96 |
5319. Langmuir probe studies and ion energies in gas discharges used for cleaning vacuum chambers
|
|
|
1982
|
32 |
12 |
p. 765-
1 p.
|
artikel
|
| 97 |
5417. Laser cleaned silicon surface—electronic structure and surface crystallography
|
|
|
1982
|
32 |
12 |
p. 775-
1 p.
|
artikel
|
| 98 |
5348. Laser implantation of impurity atoms into silicon and galliumarsenide single crystals
|
|
|
1982
|
32 |
12 |
p. 768-
1 p.
|
artikel
|
| 99 |
5273. LIMA—a laser induced ion mass analyser
|
|
|
1982
|
32 |
12 |
p. 761-
1 p.
|
artikel
|
| 100 |
5408. Local field effects on voltage contrast in the scanning electron microscope
|
|
|
1982
|
32 |
12 |
p. 774-
1 p.
|
artikel
|
| 101 |
5399. Low energy electron beam relaxation in gases in uniform electric fields
|
|
|
1982
|
32 |
12 |
p. 773-
1 p.
|
artikel
|
| 102 |
5340. Measured statistics of laser-light scattering in atmospheric turbulence
|
|
|
1982
|
32 |
12 |
p. 767-
1 p.
|
artikel
|
| 103 |
5359. Metastable honeycomb model of laser annealing
|
|
|
1982
|
32 |
12 |
p. 769-
1 p.
|
artikel
|
| 104 |
5352. Molecular beam epitaxial ZnSe:Mn dc electroluminescent cell with very low threshold voltage
|
|
|
1982
|
32 |
12 |
p. 769-
1 p.
|
artikel
|
| 105 |
5415. Molecular beam-surface scattering
|
|
|
1982
|
32 |
12 |
p. 775-
1 p.
|
artikel
|
| 106 |
5368. Negative electron resists for VLSI
|
|
|
1982
|
32 |
12 |
p. 770-
1 p.
|
artikel
|
| 107 |
New appointments in North America and Australasia
|
|
|
1982
|
32 |
12 |
p. 709-
1 p.
|
artikel
|
| 108 |
5271. New method for the calibration of vacuum gauges
|
|
|
1982
|
32 |
12 |
p. 760-761
2 p.
|
artikel
|
| 109 |
5391. New type electron monochromator
|
|
|
1982
|
32 |
12 |
p. 772-
1 p.
|
artikel
|
| 110 |
5404. New wide angle, high transmission energy analyzer for secondary ion mass spectrometry
|
|
|
1982
|
32 |
12 |
p. 774-
1 p.
|
artikel
|
| 111 |
5306. 10.6 μn Faraday rotation measurement of the azimuthal magnetic field in a Z-pinch plasma
|
|
|
1982
|
32 |
12 |
p. 764-
1 p.
|
artikel
|
| 112 |
5272. Numerical method of calculating ion current in a high pressure ionization gauge
|
|
|
1982
|
32 |
12 |
p. 761-
1 p.
|
artikel
|
| 113 |
Obituary
|
|
|
1982
|
32 |
12 |
p. 785-
1 p.
|
artikel
|
| 114 |
5336. Observations of atmospheric absorption lines from a stabilized balloon platform and measurements of stratospheric winds
|
|
|
1982
|
32 |
12 |
p. 767-
1 p.
|
artikel
|
| 115 |
5299. On the nature of continuum emission production of photons, emitted by the products of refractory metal sputtering
|
|
|
1982
|
32 |
12 |
p. 763-
1 p.
|
artikel
|
| 116 |
5335. Open path CO2 analyser
|
|
|
1982
|
32 |
12 |
p. 767-
1 p.
|
artikel
|
| 117 |
5329. Operation of a laser-heated thermal diffusion column
|
|
|
1982
|
32 |
12 |
p. 766-
1 p.
|
artikel
|
| 118 |
5281. Optical properties and transport in microcrystalline silicon prepared at temperatures below 400°C
|
|
|
1982
|
32 |
12 |
p. 761-
1 p.
|
artikel
|
| 119 |
5290. Oxidation kinetics of TiN thin films
|
|
|
1982
|
32 |
12 |
p. 762-
1 p.
|
artikel
|
| 120 |
5333. Ozone generation in oxygen by corona discharges in a point-to-plane gap subjected to a chopped DC positive voltage
|
|
|
1982
|
32 |
12 |
p. 766-
1 p.
|
artikel
|
| 121 |
5396. Performance characteristics of a circular multicusp neutral beam source
|
|
|
1982
|
32 |
12 |
p. 773-
1 p.
|
artikel
|
| 122 |
5416. Phase transitions and the electronic structure of W and Mo{001} surfaces
|
|
|
1982
|
32 |
12 |
p. 775-
1 p.
|
artikel
|
| 123 |
5390. Photoelectron spectroscopy of supersonic molecular beams
|
|
|
1982
|
32 |
12 |
p. 772-
1 p.
|
artikel
|
| 124 |
5353. Photoluminescence of Al x Ga1-x As grown by molecular beam epitaxy
|
|
|
1982
|
32 |
12 |
p. 769-
1 p.
|
artikel
|
| 125 |
5330. Plasma kinetic effects of the addition of oxygen to CO laser discharges
|
|
|
1982
|
32 |
12 |
p. 766-
1 p.
|
artikel
|
| 126 |
5291. Pole figure measurements of drawn and rolled PVF2 films
|
|
|
1982
|
32 |
12 |
p. 762-763
2 p.
|
artikel
|
| 127 |
5256. Progress with a theory of noble-gas field adsorption
|
|
|
1982
|
32 |
12 |
p. 759-
1 p.
|
artikel
|
| 128 |
5357. Properties of aluminium epitaxial growth on GaAs
|
|
|
1982
|
32 |
12 |
p. 769-
1 p.
|
artikel
|
| 129 |
5288. Properties of zinc oxide films prepared by the oxidation of diethyl zinc
|
|
|
1982
|
32 |
12 |
p. 762-
1 p.
|
artikel
|
| 130 |
5343. Pulsed laser annealing of selenimn implanted InP
|
|
|
1982
|
32 |
12 |
p. 768-
1 p.
|
artikel
|
| 131 |
5414. Quantitative compositional analyses of engineering surfaces, using AES
|
|
|
1982
|
32 |
12 |
p. 775-
1 p.
|
artikel
|
| 132 |
5289. Quantitative evaluation of structure in coalescence grown discontinuous metal films
|
|
|
1982
|
32 |
12 |
p. 762-
1 p.
|
artikel
|
| 133 |
5308. Radiation cooling instabilities in laser-heated plasma
|
|
|
1982
|
32 |
12 |
p. 764-
1 p.
|
artikel
|
| 134 |
5375. Radiation damage and recovery effects in p-type InSb
|
|
|
1982
|
32 |
12 |
p. 771-
1 p.
|
artikel
|
| 135 |
5374. Radiation damage in silicon
|
|
|
1982
|
32 |
12 |
p. 771-
1 p.
|
artikel
|
| 136 |
5366. Range and standard deviation of ion-implanted Si in GaAs
|
|
|
1982
|
32 |
12 |
p. 770-
1 p.
|
artikel
|
| 137 |
5322. Ranges of electrons
|
|
|
1982
|
32 |
12 |
p. 765-
1 p.
|
artikel
|
| 138 |
5410. Reactive properties of lead monolayers on copper and silver surfaces
|
|
|
1982
|
32 |
12 |
p. 774-
1 p.
|
artikel
|
| 139 |
5269. Response of the electric field in a positive column in helium to a current perturbation
|
|
|
1982
|
32 |
12 |
p. 760-
1 p.
|
artikel
|
| 140 |
RIE of SiO2 in doped and undoped fluorocarbon plasmas
|
Norström, H
|
|
1982
|
32 |
12 |
p. 737-745
9 p.
|
artikel
|
| 141 |
5266. Role of the anode area in the behavior of magnetic multipole discharges
|
|
|
1982
|
32 |
12 |
p. 760-
1 p.
|
artikel
|
| 142 |
5367. Rutherford hack-scattering and ellipsometry of selenium implanted InP
|
|
|
1982
|
32 |
12 |
p. 770-
1 p.
|
artikel
|
| 143 |
5356. Sharp profiles with high aM low doping levels in silicon grown by molecular beam epitaxy
|
|
|
1982
|
32 |
12 |
p. 769-
1 p.
|
artikel
|
| 144 |
5387. Simple profile monitor for low intensity, low-duty cycle pulse ion beams
|
|
|
1982
|
32 |
12 |
p. 772-
1 p.
|
artikel
|
| 145 |
5397. Small electron and ion beams in surface analysis: their optics, interactions and uses
|
|
|
1982
|
32 |
12 |
p. 773-
1 p.
|
artikel
|
| 146 |
5316. Space-charge effects on drift dominated electron and plasma motion
|
|
|
1982
|
32 |
12 |
p. 765-
1 p.
|
artikel
|
| 147 |
5331. Space environment and vacuum properties of spacecraft materials
|
|
|
1982
|
32 |
12 |
p. 766-
1 p.
|
artikel
|
| 148 |
5310. Spectroscopic investigation of the helium plasma produced by linear focusing of a tea-CO2 laser beam
|
|
|
1982
|
32 |
12 |
p. 764-
1 p.
|
artikel
|
| 149 |
5302. Sputtered thin film electrodes for photoelectrochemical cells
|
|
|
1982
|
32 |
12 |
p. 764-
1 p.
|
artikel
|
| 150 |
5326. Stopping power of diamond for low energy electrons
|
|
|
1982
|
32 |
12 |
p. 766-
1 p.
|
artikel
|
| 151 |
5298. Structural model of sputtered fluorinated amorphous silicon
|
|
|
1982
|
32 |
12 |
p. 763-
1 p.
|
artikel
|
| 152 |
5424. Surface compositions of hexaborides at high temperatures
|
|
|
1982
|
32 |
12 |
p. 776-
1 p.
|
artikel
|
| 153 |
5418. Surface coverage measurements for CO adsorption on Ru(001); a combined SIMS/TPD study
|
|
|
1982
|
32 |
12 |
p. 775-
1 p.
|
artikel
|
| 154 |
5262. Surface electronic structure calculations for Na and Cl adsorbates on Cu
|
|
|
1982
|
32 |
12 |
p. 760-
1 p.
|
artikel
|
| 155 |
5421. Surface structure determination
|
|
|
1982
|
32 |
12 |
p. 776-
1 p.
|
artikel
|
| 156 |
5332. Temporal and latitudinal 5577 Å airglow variations
|
|
|
1982
|
32 |
12 |
p. 766-
1 p.
|
artikel
|
| 157 |
5422. The adsorption of I2 on Ni{100} studied by AES, LEED and thermal desorption
|
|
|
1982
|
32 |
12 |
p. 776-
1 p.
|
artikel
|
| 158 |
5263. The adsorption of thiophene on a Cu(111) surface
|
|
|
1982
|
32 |
12 |
p. 760-
1 p.
|
artikel
|
| 159 |
5259. The chemisorption of mercury on Fe(100): adsorption and desorption kinetics, equilibrium properties and surface structure
|
|
|
1982
|
32 |
12 |
p. 759-
1 p.
|
artikel
|
| 160 |
5412. The depth resolution of composition-depth profiles obtained by ballcratering and Auger electron spectroscopy
|
|
|
1982
|
32 |
12 |
p. 774-775
2 p.
|
artikel
|
| 161 |
5344. The effect of annealing on the properties of silicidized molybdenum thin films
|
|
|
1982
|
32 |
12 |
p. 768-
1 p.
|
artikel
|
| 162 |
5255. The effect of attractive lateral interactions on flash-desorption spectra
|
|
|
1982
|
32 |
12 |
p. 759-
1 p.
|
artikel
|
| 163 |
The effect of gas purity on the reflectance and resistivity of magnetron sputtered aluminium and its alloys
|
Nyaiesh, AR
|
|
1982
|
32 |
12 |
p. 735-736
2 p.
|
artikel
|
| 164 |
5372. The effect of germanium ion implantation dose on the amorphization and recrystallization of polycrystalline silicon films
|
|
|
1982
|
32 |
12 |
p. 771-
1 p.
|
artikel
|
| 165 |
5361. The effect of substrate growth temperature on deep levels in n-Al x Ga 1-xAs growth by molecular beam epitaxy
|
|
|
1982
|
32 |
12 |
p. 769-770
2 p.
|
artikel
|
| 166 |
5354. The effect of thermal annealing on the grain size and electrical characteristics of arsenic ion-implanted and laser-irradiated polycrystaliine silicon films
|
|
|
1982
|
32 |
12 |
p. 769-
1 p.
|
artikel
|
| 167 |
5371. The effects of annealing upon the accumulation of amorphousness in a composite model of disorder production
|
|
|
1982
|
32 |
12 |
p. 770-771
2 p.
|
artikel
|
| 168 |
5294. The effects of gas composition on discharge and deposition characteristics when magnetron sputtering aluminium
|
|
|
1982
|
32 |
12 |
p. 763-
1 p.
|
artikel
|
| 169 |
5295. The effects of substrate heating and ion cleaning on thick film adhesion
|
|
|
1982
|
32 |
12 |
p. 763-
1 p.
|
artikel
|
| 170 |
5364. The effects of water on oxide and interface trapped charge generation in thermal SiO2 films
|
|
|
1982
|
32 |
12 |
p. 770-
1 p.
|
artikel
|
| 171 |
5282. The initial growth of gold on surfaces of oxidized silicon
|
|
|
1982
|
32 |
12 |
p. 762-
1 p.
|
artikel
|
| 172 |
5314. The negative end of cold cathode glow discharges
|
|
|
1982
|
32 |
12 |
p. 765-
1 p.
|
artikel
|
| 173 |
Theorie und Praxis der Vakuumtechnik
|
Yarwood, J
|
|
1982
|
32 |
12 |
p. 783-784
2 p.
|
artikel
|
| 174 |
5327. Theory of electron spin resonance of magnetic ions in metals
|
|
|
1982
|
32 |
12 |
p. 766-
1 p.
|
artikel
|
| 175 |
5380. The oxygen effect in the growth kinetics of platinum silicides
|
|
|
1982
|
32 |
12 |
p. 771-772
2 p.
|
artikel
|
| 176 |
5254. The rapid measurement of approximate flow velocities in an internal combustion engine using photon correlation laser anemometry
|
|
|
1982
|
32 |
12 |
p. 759-
1 p.
|
artikel
|
| 177 |
5345. Thermal cycling-induced changes in the electrical transport properties of (111) epitaxial, n-type PbTe films
|
|
|
1982
|
32 |
12 |
p. 768-
1 p.
|
artikel
|
| 178 |
5300. Thermalization of sputtered atoms
|
|
|
1982
|
32 |
12 |
p. 763-764
2 p.
|
artikel
|
| 179 |
5350. Thermal redistribution of indium in amorphous silicon layers
|
|
|
1982
|
32 |
12 |
p. 768-769
2 p.
|
artikel
|
| 180 |
5285. The Schottky barrier height and Auger studies of yttrium and yttrium silicide on silicon
|
|
|
1982
|
32 |
12 |
p. 762-
1 p.
|
artikel
|
| 181 |
5264. Tilted CO chemisorbed on Pt {110}
|
|
|
1982
|
32 |
12 |
p. 760-
1 p.
|
artikel
|
| 182 |
5318. Time of flight analysis of metastable products from a gas discharge
|
|
|
1982
|
32 |
12 |
p. 765-
1 p.
|
artikel
|
| 183 |
5304. Time-resolving extreme ultraviolet spectrograph for fusion diagnostics
|
|
|
1982
|
32 |
12 |
p. 764-
1 p.
|
artikel
|
| 184 |
5403. Transmission electron microscopy investigation of silicide formation on slightly oxidized silicon substrates
|
|
|
1982
|
32 |
12 |
p. 773-774
2 p.
|
artikel
|
| 185 |
5292. Transport properties of thin metal films with energy-dependent relaxation time
|
|
|
1982
|
32 |
12 |
p. 763-
1 p.
|
artikel
|
| 186 |
5370. Use of thermal annealing for radiation hardening of germanium to γ-rays
|
|
|
1982
|
32 |
12 |
p. 770-
1 p.
|
artikel
|
| 187 |
Vacuum news
|
|
|
1982
|
32 |
12 |
p. 779-782
4 p.
|
artikel
|
| 188 |
5267. Vacuum ultraviolet H2 laser excited by a traveling-wave discharge.
|
|
|
1982
|
32 |
12 |
p. 760-
1 p.
|
artikel
|
| 189 |
5265. Voltage-current relationship for poised arc discharges
|
|
|
1982
|
32 |
12 |
p. 760-
1 p.
|
artikel
|
| 190 |
5257. Water adsorption on metal surfaces: an electrochemical viewpoint
|
|
|
1982
|
32 |
12 |
p. 759-
1 p.
|
artikel
|
| 191 |
5395. What determines the energy resolution of the RPD method?
|
|
|
1982
|
32 |
12 |
p. 773-
1 p.
|
artikel
|
| 192 |
5301. X-Ray photoelectron spectroscopy of sputtered platinum thin films containing large amounts of carbon
|
|
|
1982
|
32 |
12 |
p. 764-
1 p.
|
artikel
|
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