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                             35 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A humidity sensor based on quartz crystal microbalance using graphene oxide as a sensitive layer Jin, Hao
2017
140 C p. 101-105
5 p.
artikel
2 Anomalous rapid diffusion of phosphorus caused by heavily implanted carbon in pre-amorphized ultrashallow junctions Chang, Ruey-Dar
2017
140 C p. 161-164
4 p.
artikel
3 BaxSr1−xTiO3 sensing membrane in electrolyte-insulator-semiconductor structure with rapid thermal annealing in N2 ambient Kao, Chyuan-Haur
2017
140 C p. 3-6
4 p.
artikel
4 Bipolar and rewritable switching of one diode–one resistor nonvolatile strontium titanate nickelate memory devices Lee, Ke-Jing
2017
140 C p. 35-41
7 p.
artikel
5 Capacitance-voltage characteristics measured through pulse technique on high-k dielectric MOS devices Lu, Qifeng
2017
140 C p. 19-23
5 p.
artikel
6 Characterization and crystallization kinetics of sputtered NiSi thin films for blue laser optical recording application Ou, Sin-Liang
2017
140 C p. 144-148
5 p.
artikel
7 Editorial Board & Publication Information 2017
140 C p. IFC-
1 p.
artikel
8 Effects of bottom electrode on resistive switching of silver programmable metallization cells with GdxOy/AlxOy solid electrolytes Chan, Ya-Ting
2017
140 C p. 30-34
5 p.
artikel
9 Effects of radio frequency power on the microstructures and properties of plasma polymerized polypyrrole thin films Li, Chuan
2017
140 C p. 132-138
7 p.
artikel
10 Effects of thermal annealing on the interface between tungsten and CeO2/La2O3 stack gate dielectrics Zhang, Jieqiong
2017
140 C p. 7-13
7 p.
artikel
11 Efficiency enhancement for resonant-cavity-enhanced InGaN/GaN multiple quantum well solar cells Zheng, Z.W.
2017
140 C p. 76-81
6 p.
artikel
12 Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers Huang, Jiayi
2017
140 C p. 24-29
6 p.
artikel
13 Enhancing efficiency of perovskite solar cells using a thin buffer layer Lin, Wen Kai
2017
140 C p. 82-88
7 p.
artikel
14 Fabrication and characterization of ITO thin film resistance temperature detector Wang, Yanlei
2017
140 C p. 121-125
5 p.
artikel
15 Flexible ECoG electrode for implantation and neural signal recording applications Dong, Shurong
2017
140 C p. 96-100
5 p.
artikel
16 β-Ga2O3 solar-blind deep-ultraviolet photodetector based on annealed sapphire substrate Qian, L.X.
2017
140 C p. 106-110
5 p.
artikel
17 How high can the mobility of monolayer tungsten disulfide be? Chen, Kuan-Ting
2017
140 C p. 172-175
4 p.
artikel
18 Influence of anodizing time on morphology, structure and tribological properties of composite anodic films on titanium alloy Wu, Liang
2017
140 C p. 176-184
9 p.
artikel
19 Influence of Cr2O3 thickness on the magnetic properties of NiFe/Cr2O3 bilayers deposited on SrTiO3 single-crystalline substrate Chang, Yu-Chi
2017
140 C p. 126-131
6 p.
artikel
20 Infrared spectroscopic analysis of reactively formed La-silicate interface layer at La2O3/Si substrates Kakushima, K.
2017
140 C p. 14-18
5 p.
artikel
21 Nonlinear voltage-current characteristics of MnTe films with island growth Yang, Liang
2017
140 C p. 165-171
7 p.
artikel
22 Operation characteristics of Poly-Si nanowire charge-trapping flash memory devices with SiGe and Ge buried channels Fang, Hsin-Kai
2017
140 C p. 53-57
5 p.
artikel
23 Physical and electrical properties of flash memory devices with nickel oxide(NiO2) charge trapping layer Lee, Ming Ling
2017
140 C p. 47-52
6 p.
artikel
24 Physical properties of TiO2-doped zinc oxide thin films: Influence of plasma treatment in H2 and/or Ar gas ambient Wang, Fang-Hsing
2017
140 C p. 155-160
6 p.
artikel
25 Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment Shi, Mao-Lin
2017
140 C p. 139-143
5 p.
artikel
26 Preparation and thermoelectric characteristics of ITO/Pt thin film thermocouples on Ni-based superalloy substrate Zhao, Xiaohui
2017
140 C p. 116-120
5 p.
artikel
27 Reprint of: Improvements on thermal stability of graphene and top gate graphene transistors by Ar annealing Liu, Bo
2017
140 C p. 149-154
6 p.
artikel
28 Special issue containing selected papers from ISNE 2016 and IEEE INEC 2016 conferences Kok, Chi Wah
2017
140 C p. 1-2
2 p.
artikel
29 Spin valves with Conetic based synthetic ferrimagnet free layer Chan, P.H.
2017
140 C p. 111-115
5 p.
artikel
30 The achievement of the super short channel control in the magnetic Ge n-FinFETs with the negative capacitance effect Liao, Ming-Han
2017
140 C p. 63-65
3 p.
artikel
31 The effect of CESL and dummy poly gate for n-type MOSFETs with short Si0.75Ge0.25 channel Lee, Chang-Chun
2017
140 C p. 66-70
5 p.
artikel
32 The high-yield growth of Bi2Se3 nanostructures via facile physical vapor deposition Gao, Lei
2017
140 C p. 58-62
5 p.
artikel
33 Thermoelectric properties of nanocomposite n-type Cr2O3/Cr thin films deposited by a reactive sputtering Jella, Venkatraju
2017
140 C p. 71-75
5 p.
artikel
34 Trap characterization and conductance quantization in phosphorus-doped ZnO memory devices Chiu, Fu-Chien
2017
140 C p. 42-46
5 p.
artikel
35 Ultraviolet illumination effect on monolayer graphene-based resistive sensor for acetone detection Yang, Chia-Ming
2017
140 C p. 89-95
7 p.
artikel
                             35 gevonden resultaten
 
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