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Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers |
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Titel: |
Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers |
Auteur: |
Huang, Jiayi Chang-Liao, Kuei-Shu Li, Chen-Chien Li, Yan-Lin Tsai, Chia-Chi Ku, Chao-Chen Chen, Po-Yen Huang, Tse-Jung Wu, Tzung-Yu Chu, Fu-Chuan Yi, Shih-Han |
Verschenen in: |
Vacuum |
Paginering: |
Jaargang 140 (2017) nr. C pagina's 6 p. |
Jaar: |
2017 |
Inhoud: |
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Uitgever: |
Elsevier Ltd |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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