nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT)
|
Tsai, Tsung-Han |
|
2010 |
50 |
5 |
p. 734-737 4 p. |
artikel |
2 |
A 0.35μm CMOS divide-by-2 quadrature injection-locked frequency divider based on voltage–current feedback topology
|
Jang, Sheng-Lyang |
|
2010 |
50 |
5 |
p. 594-598 5 p. |
artikel |
3 |
Analysis of ESD discharge current distribution and area optimization of VDMOS gate protection structure
|
Tam, Wing-Shan |
|
2010 |
50 |
5 |
p. 622-626 5 p. |
artikel |
4 |
Analysis of optical properties of fundamental-mode in waveguide tapered fibers
|
Lee, Cheng-Ling |
|
2010 |
50 |
5 |
p. 726-729 4 p. |
artikel |
5 |
An investigation of drain pulse induced hot carrier degradation in n-type low temperature polycrystalline silicon thin film transistors
|
Zhang, Meng |
|
2010 |
50 |
5 |
p. 713-716 4 p. |
artikel |
6 |
A process for high yield and high performance carbon nanotube field effect transistors
|
Lee, Tseng-Chin |
|
2010 |
50 |
5 |
p. 666-669 4 p. |
artikel |
7 |
A simple method for sub-100nm pattern generation with I-line double-patterning technique
|
Tsai, Tzu-I |
|
2010 |
50 |
5 |
p. 584-588 5 p. |
artikel |
8 |
Calendar
|
|
|
2010 |
50 |
5 |
p. I-III nvt p. |
artikel |
9 |
Characteristics of pH sensors fabricated by using protein-mediated CdSe/ZnS quantum dots
|
Maikap, S. |
|
2010 |
50 |
5 |
p. 747-752 6 p. |
artikel |
10 |
Characteristics optimization of N2O annealing on tungsten nanocrystal with W/Si dual-sputtered method for nonvolatile memory application
|
Wang, Jer-Chyi |
|
2010 |
50 |
5 |
p. 639-642 4 p. |
artikel |
11 |
Device and circuit level suppression techniques for random-dopant-induced static noise margin fluctuation in 16-nm-gate SRAM cell
|
Lee, Kuo-Fu |
|
2010 |
50 |
5 |
p. 647-651 5 p. |
artikel |
12 |
Effects of RF power on the structural, optical and electrical properties of Al-doped zinc oxide films
|
Kuo, Shou-Yi |
|
2010 |
50 |
5 |
p. 730-733 4 p. |
artikel |
13 |
Electrical and reliability characteristics of GaAs MOSHEMTs utilizing high-k IIIB and IVB oxide layers
|
Chiu, Hsien-Chin |
|
2010 |
50 |
5 |
p. 631-634 4 p. |
artikel |
14 |
Electrical characteristics and reliability properties of metal–oxide–semiconductor capacitors with HfZrLaO gate dielectrics
|
Liu, C.H. |
|
2010 |
50 |
5 |
p. 599-602 4 p. |
artikel |
15 |
Electrical characteristics of nMOSFETs fabricated on hybrid orientation substrate with amorphization/templated recrystallization method
|
Huang, Po Chin |
|
2010 |
50 |
5 |
p. 662-665 4 p. |
artikel |
16 |
Fabrication and thermal analysis of flip-chip light-emitting diodes with different numbers of Au stub bumps
|
Lin, Cheng-Chen |
|
2010 |
50 |
5 |
p. 683-687 5 p. |
artikel |
17 |
Fabrication of Au/PEDOT stacked electrodes for organic thin film transistors by imprinting technology
|
Chen, Henry J.H. |
|
2010 |
50 |
5 |
p. 717-721 5 p. |
artikel |
18 |
Field enhancement of omega-shaped-gated poly-Si TFT SONOS memory fabricated by a simple sidewall spacer formation
|
Wu, Chun-Yu |
|
2010 |
50 |
5 |
p. 704-708 5 p. |
artikel |
19 |
Flexible metal–insulator–metal capacitor using plasma enhanced binary hafnium–zirconium–oxide as gate dielectric layer
|
Meena, Jagan Singh |
|
2010 |
50 |
5 |
p. 652-656 5 p. |
artikel |
20 |
Gate tunneling leakage current behavior of 40nm PD SOI NMOS device considering the floating body effect
|
Hung, H.J. |
|
2010 |
50 |
5 |
p. 607-609 3 p. |
artikel |
21 |
Ge based nanostructures for electronic and photonic devices
|
Ray, S.K. |
|
2010 |
50 |
5 |
p. 674-678 5 p. |
artikel |
22 |
Glucose biosensor of ruthenium-doped TiO2 sensing electrode by co-sputtering system
|
Chou, Jung-Chuan |
|
2010 |
50 |
5 |
p. 753-756 4 p. |
artikel |
23 |
High efficiency p–i–n organic light-emitting diodes with a novel n-doping layer
|
Chen, Peng Yu |
|
2010 |
50 |
5 |
p. 696-698 3 p. |
artikel |
24 |
High-power broad-area InGaNAs/GaAs quantum-well lasers in the 1200nm range
|
Yang, Hung-Pin D. |
|
2010 |
50 |
5 |
p. 722-725 4 p. |
artikel |
25 |
Hysteresis effect on traps of Si3N4 sensing membranes for pH difference sensitivity
|
Lue, Cheng-En |
|
2010 |
50 |
5 |
p. 738-741 4 p. |
artikel |
26 |
Impact of Hf content on positive bias temperature instability reliability of HfSiON gate dielectrics
|
Chen, H.W. |
|
2010 |
50 |
5 |
p. 614-617 4 p. |
artikel |
27 |
Improvement of TDDB reliability, characteristics of HfO2 high-k/metal gate MOSFET device with oxygen post deposition annealing
|
Hsu, Chia-Wei |
|
2010 |
50 |
5 |
p. 618-621 4 p. |
artikel |
28 |
InGaAs submonolayer quantum-dot photonic-crystal LEDs for fiber-optic communications
|
Yang, Hung-Pin D. |
|
2010 |
50 |
5 |
p. 688-691 4 p. |
artikel |
29 |
Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs
|
Lin, Ray-Ming |
|
2010 |
50 |
5 |
p. 679-682 4 p. |
artikel |
30 |
Inside front cover - Editorial board
|
|
|
2010 |
50 |
5 |
p. IFC- 1 p. |
artikel |
31 |
Low power resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte
|
Rahaman, S.Z. |
|
2010 |
50 |
5 |
p. 643-646 4 p. |
artikel |
32 |
Modeling of high-frequency characteristics for epoxy-sealed micro vacuum capacitors
|
Wong, Oi Ying |
|
2010 |
50 |
5 |
p. 627-630 4 p. |
artikel |
33 |
Multi-gate non-volatile memories with nanowires as charge storage material
|
Tsui, Bing-Yue |
|
2010 |
50 |
5 |
p. 603-606 4 p. |
artikel |
34 |
Non-ideal effects improvement of SF6 plasma treated hafnium oxide film based on electrolyte–insulator–semiconductor structure for pH-sensor application
|
Lu, Tseng-Fu |
|
2010 |
50 |
5 |
p. 742-746 5 p. |
artikel |
35 |
[No title]
|
Liou, Juin J. |
|
2010 |
50 |
5 |
p. 583- 1 p. |
artikel |
36 |
On the injection methods in a top-series-injection-locked frequency divider
|
Jang, Sheng-Lyang |
|
2010 |
50 |
5 |
p. 589-593 5 p. |
artikel |
37 |
Optimization on configuration of surface conduction electron-emitters
|
Cheng, Hui-Wen |
|
2010 |
50 |
5 |
p. 699-703 5 p. |
artikel |
38 |
Physical and electrical characteristics of the high-k Nd2O3 polyoxide deposited on polycrystalline silicon
|
Kao, Chyuan-Haur |
|
2010 |
50 |
5 |
p. 709-712 4 p. |
artikel |
39 |
Red polymer light-emitting devices based on dye-dispersed poly (9,9-dioctylfluorene-alt-benzothiadiazole)
|
Chiu, Pin-Hsiang |
|
2010 |
50 |
5 |
p. 692-695 4 p. |
artikel |
40 |
Statistical variability in FinFET devices with intrinsic parameter fluctuations
|
Hwang, Chih-Hong |
|
2010 |
50 |
5 |
p. 635-638 4 p. |
artikel |
41 |
Tensile CESL-induced strain dependence on impact ionization efficiency in nMOSFETs
|
Wang, Bo-Chin |
|
2010 |
50 |
5 |
p. 610-613 4 p. |
artikel |
42 |
The impact of high-frequency characteristics induced by intrinsic parameter fluctuations in nano-MOSFET device and circuit
|
Han, Ming-Hung |
|
2010 |
50 |
5 |
p. 657-661 5 p. |
artikel |
43 |
The resistive switching characteristics of a Ti/Gd2O3/Pt RRAM device
|
Liu, Kou-Chen |
|
2010 |
50 |
5 |
p. 670-673 4 p. |
artikel |