nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A symbolic approach to design centering of analog circuits
|
Grasso, Francesco |
|
2007 |
47 |
8 |
p. 1288-1295 8 p. |
artikel |
2 |
Characterisation and passivation of interface defects in (100)-Si/SiO2/HfO2/TiN gate stacks
|
Hurley, P.K. |
|
2007 |
47 |
8 |
p. 1195-1201 7 p. |
artikel |
3 |
Chip-on-Board (CoB) technology for low temperature environments. Part I: Wire profile modeling in unencapsulated chips
|
Jinka, K.K. |
|
2007 |
47 |
8 |
p. 1246-1250 5 p. |
artikel |
4 |
Cohesive zone modeling for structural integrity analysis of IC interconnects
|
van Hal, B.A.E. |
|
2007 |
47 |
8 |
p. 1251-1261 11 p. |
artikel |
5 |
Comparison between BSIM4.X and HSPICE flicker noise models in NMOS and PMOS transistors in all operating regions
|
Noulis, T. |
|
2007 |
47 |
8 |
p. 1222-1227 6 p. |
artikel |
6 |
Correlating gate sinking and electrical performance of pseudomorphic high electron mobility transistors
|
Berechman, Ronen A. |
|
2007 |
47 |
8 |
p. 1202-1207 6 p. |
artikel |
7 |
Correlation between localized strain and damage in shear-loaded Pb-free solders
|
Matin, M.A. |
|
2007 |
47 |
8 |
p. 1262-1272 11 p. |
artikel |
8 |
Defining the safe operating area for HBTs with an InGaP emitter across temperature and current density
|
Whitman, Charles S. |
|
2007 |
47 |
8 |
p. 1166-1174 9 p. |
artikel |
9 |
Determination of transistor infant failure probability in InGaP/GaAs heterojunction bipolar technology
|
Alt, K.W. |
|
2007 |
47 |
8 |
p. 1175-1179 5 p. |
artikel |
10 |
Effect of oval defects in GaAs on the reliability of SiN x metal–insulator–metal capacitors
|
van der Wel, P.J. |
|
2007 |
47 |
8 |
p. 1188-1193 6 p. |
artikel |
11 |
Electromigration of Sn–37Pb and Sn–3Ag–1.5Cu/Sn–3Ag–0.5Cu composite flip–chip solder bumps with Ti/Ni(V)/Cu under bump metallurgy
|
Lai, Yi-Shao |
|
2007 |
47 |
8 |
p. 1273-1279 7 p. |
artikel |
12 |
Field returns, a source of natural failure mechanisms
|
Roesch, William J. |
|
2007 |
47 |
8 |
p. 1156-1165 10 p. |
artikel |
13 |
First-principles study of the effects of oxygen vacancy on hole tunneling current
|
Mao, L.F. |
|
2007 |
47 |
8 |
p. 1213-1217 5 p. |
artikel |
14 |
Improved low frequency noise characteristics of sub-micron MOSFETs with TaSiN/TiN gate on ALD HfO2 dielectric
|
Devireddy, Siva Prasad |
|
2007 |
47 |
8 |
p. 1228-1232 5 p. |
artikel |
15 |
Influence of thermal contact resistance on thermal impedance of microelectronic structures
|
Vermeersch, B. |
|
2007 |
47 |
8 |
p. 1233-1238 6 p. |
artikel |
16 |
Low frequency noise and technology induced mechanical stress in MOSFETs
|
Fantini, Paolo |
|
2007 |
47 |
8 |
p. 1218-1221 4 p. |
artikel |
17 |
[No title]
|
Ersland, Peter |
|
2007 |
47 |
8 |
p. 1155- 1 p. |
artikel |
18 |
[No title]
|
Stojcev, Mile |
|
2007 |
47 |
8 |
p. 1308-1309 2 p. |
artikel |
19 |
[No title]
|
Stojcev, Mile |
|
2007 |
47 |
8 |
p. 1306-1307 2 p. |
artikel |
20 |
On the failure path in shear-tested solder joints
|
Moy, W.H. |
|
2007 |
47 |
8 |
p. 1300-1305 6 p. |
artikel |
21 |
Reliability and performance of a true enhancement mode HIGFET for wireless applications
|
Gaw, Craig |
|
2007 |
47 |
8 |
p. 1180-1187 8 p. |
artikel |
22 |
Response spectra analysis for undamped structural systems subjected to half-sine impact acceleration pulses
|
Tsai, Tsung-Yueh |
|
2007 |
47 |
8 |
p. 1239-1245 7 p. |
artikel |
23 |
Studies on solder bump electromigration in Cu/Sn–3Ag–0.5Cu/Cu system
|
Yamanaka, Kimihiro |
|
2007 |
47 |
8 |
p. 1280-1287 8 p. |
artikel |
24 |
Switching times variation of power MOSFET devices after electrical stress
|
Habchi, R. |
|
2007 |
47 |
8 |
p. 1296-1299 4 p. |
artikel |
25 |
Very wide current-regime operation of an InP/InGaAs tunneling emitter bipolar transistor (TEBT)
|
Cheng, Shiou-Ying |
|
2007 |
47 |
8 |
p. 1208-1212 5 p. |
artikel |