nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Application of three-parameter lognormal distribution in EM data analysis
|
Li, Baozhen |
|
2006 |
46 |
12 |
p. 2049-2055 7 p. |
artikel |
2 |
A review of gate tunneling current in MOS devices
|
Ranuárez, Juan C. |
|
2006 |
46 |
12 |
p. 1939-1956 18 p. |
artikel |
3 |
Assessing the performance of crack detection tests for solder joints
|
Ridout, Stephen |
|
2006 |
46 |
12 |
p. 2122-2130 9 p. |
artikel |
4 |
Author Index for Volume 46
|
|
|
2006 |
46 |
12 |
p. XVII-XXII nvt p. |
artikel |
5 |
Board level solder joint reliability analysis of stacked die mixed flip-chip and wirebond BGA
|
Tee, Tong Yan |
|
2006 |
46 |
12 |
p. 2131-2138 8 p. |
artikel |
6 |
CCGA packages for space applications
|
Ghaffarian, Reza |
|
2006 |
46 |
12 |
p. 2006-2024 19 p. |
artikel |
7 |
Contents of volume 46
|
|
|
2006 |
46 |
12 |
p. III-XVI nvt p. |
artikel |
8 |
Current-dependent hot-electron stresses on InGaP-gated and AlGaAs-gated low noise PHEMTs
|
Huang, Hou-Kuei |
|
2006 |
46 |
12 |
p. 2038-2043 6 p. |
artikel |
9 |
Determination of thermal resistance using Gummel measurement for InGaP/GaAs HBTs
|
Chang, Yang-Hua |
|
2006 |
46 |
12 |
p. 2074-2078 5 p. |
artikel |
10 |
Dynamic hot-carrier induced degradation in n-channel polysilicon thin-film transistors
|
Tassis, D.H. |
|
2006 |
46 |
12 |
p. 2032-2037 6 p. |
artikel |
11 |
Effect of annealing on the properties of low-k nanoporous SiO2 films prepared by sol–gel method with catalyst HF
|
He, Z.W. |
|
2006 |
46 |
12 |
p. 2062-2066 5 p. |
artikel |
12 |
Effects of pre-bump probing and bumping processes on eutectic solder bump electromigration
|
Chen, Kuo-Ming |
|
2006 |
46 |
12 |
p. 2104-2111 8 p. |
artikel |
13 |
Electronic circuit reliability modeling
|
Bernstein, Joseph B. |
|
2006 |
46 |
12 |
p. 1957-1979 23 p. |
artikel |
14 |
Erratum to “Determining factors affecting ESD failure voltage using DOE” [Microelectron. Reliab. 46 (2006) 1228–1237]
|
Whitman, Charles |
|
2006 |
46 |
12 |
p. 2160- 1 p. |
artikel |
15 |
Erratum to “Reliability results of HBTs with an InGaP emitter” [Microelectron. Reliab. 46 (2006) 1261–1271]
|
Whitman, Charles S. |
|
2006 |
46 |
12 |
p. 2159- 1 p. |
artikel |
16 |
ESD robustness of thin-film devices with different layout structures in LTPS technology
|
Deng, Chih-Kang |
|
2006 |
46 |
12 |
p. 2067-2073 7 p. |
artikel |
17 |
Failure mechanisms of pure silver, pure aluminum and silver–aluminum alloy under high current stress
|
Misra, E. |
|
2006 |
46 |
12 |
p. 2096-2103 8 p. |
artikel |
18 |
Hot-electron effects on AlGaAs/InGaAs/GaAs PHEMTs under accelerated DC stresses
|
Huang, Hou-Kuei |
|
2006 |
46 |
12 |
p. 2025-2031 7 p. |
artikel |
19 |
Influence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler–Nordheim electron injection
|
Yang, B.L. |
|
2006 |
46 |
12 |
p. 2044-2048 5 p. |
artikel |
20 |
Investigations of transient thermal properties of conductively cooled diode laser arrays operating under quasicontinuous-wave conditions
|
Kozlowska, Anna |
|
2006 |
46 |
12 |
p. 2079-2084 6 p. |
artikel |
21 |
Minimizing hydrogen content in silicon oxynitride by thermal oxidation of silicon-rich silicon nitride
|
Wong, C.K. |
|
2006 |
46 |
12 |
p. 2056-2061 6 p. |
artikel |
22 |
Novel charge neutralization techniques applicable to wide current range of FIB processing in FIB-SEM combined system
|
Komoda, Hirotaka |
|
2006 |
46 |
12 |
p. 2085-2095 11 p. |
artikel |
23 |
Oxidation of Au4Al in un-moulded gold ballbonds after high temperature storage (HTS) in air at 175°C
|
Breach, C.D. |
|
2006 |
46 |
12 |
p. 2112-2121 10 p. |
artikel |
24 |
Technologies and reliability of modern embedded flash cells
|
Sikora, Axel |
|
2006 |
46 |
12 |
p. 1980-2005 26 p. |
artikel |
25 |
Transistor-level to gate-level comprehensive fault synthesis for n-input primitive gates
|
Sedaghat, Reza |
|
2006 |
46 |
12 |
p. 2149-2158 10 p. |
artikel |
26 |
Using intuitionistic fuzzy sets for fault-tree analysis on printed circuit board assembly
|
Shu, Ming-Hung |
|
2006 |
46 |
12 |
p. 2139-2148 10 p. |
artikel |