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                             26 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Application of three-parameter lognormal distribution in EM data analysis Li, Baozhen
2006
46 12 p. 2049-2055
7 p.
artikel
2 A review of gate tunneling current in MOS devices Ranuárez, Juan C.
2006
46 12 p. 1939-1956
18 p.
artikel
3 Assessing the performance of crack detection tests for solder joints Ridout, Stephen
2006
46 12 p. 2122-2130
9 p.
artikel
4 Author Index for Volume 46 2006
46 12 p. XVII-XXII
nvt p.
artikel
5 Board level solder joint reliability analysis of stacked die mixed flip-chip and wirebond BGA Tee, Tong Yan
2006
46 12 p. 2131-2138
8 p.
artikel
6 CCGA packages for space applications Ghaffarian, Reza
2006
46 12 p. 2006-2024
19 p.
artikel
7 Contents of volume 46 2006
46 12 p. III-XVI
nvt p.
artikel
8 Current-dependent hot-electron stresses on InGaP-gated and AlGaAs-gated low noise PHEMTs Huang, Hou-Kuei
2006
46 12 p. 2038-2043
6 p.
artikel
9 Determination of thermal resistance using Gummel measurement for InGaP/GaAs HBTs Chang, Yang-Hua
2006
46 12 p. 2074-2078
5 p.
artikel
10 Dynamic hot-carrier induced degradation in n-channel polysilicon thin-film transistors Tassis, D.H.
2006
46 12 p. 2032-2037
6 p.
artikel
11 Effect of annealing on the properties of low-k nanoporous SiO2 films prepared by sol–gel method with catalyst HF He, Z.W.
2006
46 12 p. 2062-2066
5 p.
artikel
12 Effects of pre-bump probing and bumping processes on eutectic solder bump electromigration Chen, Kuo-Ming
2006
46 12 p. 2104-2111
8 p.
artikel
13 Electronic circuit reliability modeling Bernstein, Joseph B.
2006
46 12 p. 1957-1979
23 p.
artikel
14 Erratum to “Determining factors affecting ESD failure voltage using DOE” [Microelectron. Reliab. 46 (2006) 1228–1237] Whitman, Charles
2006
46 12 p. 2160-
1 p.
artikel
15 Erratum to “Reliability results of HBTs with an InGaP emitter” [Microelectron. Reliab. 46 (2006) 1261–1271] Whitman, Charles S.
2006
46 12 p. 2159-
1 p.
artikel
16 ESD robustness of thin-film devices with different layout structures in LTPS technology Deng, Chih-Kang
2006
46 12 p. 2067-2073
7 p.
artikel
17 Failure mechanisms of pure silver, pure aluminum and silver–aluminum alloy under high current stress Misra, E.
2006
46 12 p. 2096-2103
8 p.
artikel
18 Hot-electron effects on AlGaAs/InGaAs/GaAs PHEMTs under accelerated DC stresses Huang, Hou-Kuei
2006
46 12 p. 2025-2031
7 p.
artikel
19 Influence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler–Nordheim electron injection Yang, B.L.
2006
46 12 p. 2044-2048
5 p.
artikel
20 Investigations of transient thermal properties of conductively cooled diode laser arrays operating under quasicontinuous-wave conditions Kozlowska, Anna
2006
46 12 p. 2079-2084
6 p.
artikel
21 Minimizing hydrogen content in silicon oxynitride by thermal oxidation of silicon-rich silicon nitride Wong, C.K.
2006
46 12 p. 2056-2061
6 p.
artikel
22 Novel charge neutralization techniques applicable to wide current range of FIB processing in FIB-SEM combined system Komoda, Hirotaka
2006
46 12 p. 2085-2095
11 p.
artikel
23 Oxidation of Au4Al in un-moulded gold ballbonds after high temperature storage (HTS) in air at 175°C Breach, C.D.
2006
46 12 p. 2112-2121
10 p.
artikel
24 Technologies and reliability of modern embedded flash cells Sikora, Axel
2006
46 12 p. 1980-2005
26 p.
artikel
25 Transistor-level to gate-level comprehensive fault synthesis for n-input primitive gates Sedaghat, Reza
2006
46 12 p. 2149-2158
10 p.
artikel
26 Using intuitionistic fuzzy sets for fault-tree analysis on printed circuit board assembly Shu, Ming-Hung
2006
46 12 p. 2139-2148
10 p.
artikel
                             26 gevonden resultaten
 
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