| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A reliable procedure for testing linear regulators with one-sided specification limits based on multiple samples
|
Pearn, W.L
|
|
2003
|
43 |
4 |
p. 651-664
14 p.
|
artikel
|
| 2 |
A simple four-terminal small-signal model of RF MOSFETs and its parameter extraction
|
Je, Minkyu
|
|
2003
|
43 |
4 |
p. 601-609
9 p.
|
artikel
|
| 3 |
Calendar of forthcoming events
|
|
|
2003
|
43 |
4 |
p. I-IX
nvt p.
|
artikel
|
| 4 |
Characterisation of series resistance degradation through charge pumping technique
|
Manhas, S.K
|
|
2003
|
43 |
4 |
p. 617-624
8 p.
|
artikel
|
| 5 |
Copper metallization influence on power MOS reliability
|
Feybesse, Adeline
|
|
2003
|
43 |
4 |
p. 571-576
6 p.
|
artikel
|
| 6 |
Diffusion and absorption of corrosive gases in electronic encapsulants
|
Hillman, C
|
|
2003
|
43 |
4 |
p. 635-643
9 p.
|
artikel
|
| 7 |
Dynamic avalanche and reliability of high voltage diodes
|
Lutz, Josef
|
|
2003
|
43 |
4 |
p. 529-536
8 p.
|
artikel
|
| 8 |
Effects of hydrogenation on the performance and stability of p-channel polycrystalline silicon thin-film transistors
|
Hastas, N.A.
|
|
2003
|
43 |
4 |
p. 671-674
4 p.
|
artikel
|
| 9 |
Electron transport in implant isolation GaAs layers
|
Synowiec, Z.
|
|
2003
|
43 |
4 |
p. 675-679
5 p.
|
artikel
|
| 10 |
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact
|
Velardi, F.
|
|
2003
|
43 |
4 |
p. 549-555
7 p.
|
artikel
|
| 11 |
Foldable Flex and Thinned Silicon Chips for Multichip Packaging; John Balde (Ed.), Kluwer Academic Publishers, Boston, USA, December 2002. Hardbound, 340 pp., Number of figures and tables 200, EURO 187.00/USD 185.00/GBP 120.00, ISBN 0-7923-7676-5
|
Liu, Johan
|
|
2003
|
43 |
4 |
p. 681-683
3 p.
|
artikel
|
| 12 |
Impact of the electron, proton and helium irradiation on the forward I–V characteristics of high-power P–i–N diode
|
Vobecký, J
|
|
2003
|
43 |
4 |
p. 537-544
8 p.
|
artikel
|
| 13 |
Low-frequency noise study in electron devices: review and update
|
Wong, Hei
|
|
2003
|
43 |
4 |
p. 585-599
15 p.
|
artikel
|
| 14 |
MAGFET based current sensing for power integrated circuit
|
Busatto, Giovanni
|
|
2003
|
43 |
4 |
p. 577-583
7 p.
|
artikel
|
| 15 |
Onefold coordinated oxygen atom: an electron trap in the silicon oxide
|
Gritsenko, V.A.
|
|
2003
|
43 |
4 |
p. 665-669
5 p.
|
artikel
|
| 16 |
Oxynitride gate dielectric prepared by thermal oxidation of low-pressure chemical vapor deposition silicon-rich silicon nitride
|
Chan, Jackie
|
|
2003
|
43 |
4 |
p. 611-616
6 p.
|
artikel
|
| 17 |
Present problems of power module packaging technology
|
Shammas, N.Y.A
|
|
2003
|
43 |
4 |
p. 519-527
9 p.
|
artikel
|
| 18 |
Strength of Ta–Si interfaces by molecular dynamics
|
Heino, P.
|
|
2003
|
43 |
4 |
p. 645-650
6 p.
|
artikel
|
| 19 |
Study of aluminum thermomigration as a low thermal budget technique for innovative power devices
|
Morillon, B
|
|
2003
|
43 |
4 |
p. 565-569
5 p.
|
artikel
|
| 20 |
Study of internal behavior in a vertical DMOS transistor under short high current stress by an interferometric mapping method
|
Blaho, M.
|
|
2003
|
43 |
4 |
p. 545-548
4 p.
|
artikel
|
| 21 |
System Design with System C; Thorsten Grotker, Stan Liao, Grant Martin, Stuart Swan. Kluwer Academic Publishers, Boston, 2002. Hardcover, pp. 217, plus X, $110, ISBN 1-4020-7027-1
|
Stojcev, Mile
|
|
2003
|
43 |
4 |
p. 683-684
2 p.
|
artikel
|
| 22 |
The effect of reflow process on the contact resistance and reliability of anisotropic conductive film interconnection for flip chip on flex applications
|
Yin, C.Y
|
|
2003
|
43 |
4 |
p. 625-633
9 p.
|
artikel
|
| 23 |
The quest for optimum technology of power semiconductor devices
|
Benda, Vitezslav
|
|
2003
|
43 |
4 |
p. 517-
1 p.
|
artikel
|
| 24 |
Transient effects on high voltage diode stack under reverse bias
|
Papež, V.
|
|
2003
|
43 |
4 |
p. 557-564
8 p.
|
artikel
|
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