| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A grain structure based statistical simulation of electromigration damage in chip level interconnect lines
|
Korhonen, T.M.
|
|
2000
|
40 |
12 |
p. 2053-2060
8 p.
|
artikel
|
| 2 |
A new hole mobility model for hydrodynamic simulation
|
Lee, Chanho
|
|
2000
|
40 |
12 |
p. 2019-2022
4 p.
|
artikel
|
| 3 |
Back gate bias method of threshold voltage control for the design of low voltage CMOS ternary logic circuits
|
Srivastava, A.
|
|
2000
|
40 |
12 |
p. 2107-2110
4 p.
|
artikel
|
| 4 |
Bulk oxide charge and slow states in Si–SiO2 structures generated by RIE-mode plasma
|
Paskaleva, A
|
|
2000
|
40 |
12 |
p. 2033-2037
5 p.
|
artikel
|
| 5 |
Concurrent testing in high level synthesis
|
Ismaeel, A.A.
|
|
2000
|
40 |
12 |
p. 2095-2106
12 p.
|
artikel
|
| 6 |
Estimation of the reliability of digital systems implemented on programmable devices
|
Vasiltsov, Igor V.
|
|
2000
|
40 |
12 |
p. 2087-2093
7 p.
|
artikel
|
| 7 |
High-performance System Design: Circuits and Logic; Vojin Oklobdzija (Ed.), IEEE Press Series on Microelectronic Systems, New York, 1999. Hardcover, 537 pp., IEEE Order No. PC 5765, ISBN: 0-7803-4716-1, $110
|
Stojcev, M
|
|
2000
|
40 |
12 |
p. 2129-
1 p.
|
artikel
|
| 8 |
High resolution thermal simulation of electronic components
|
Hanreich, G
|
|
2000
|
40 |
12 |
p. 2069-2076
8 p.
|
artikel
|
| 9 |
IC’s radiation effects modeling and estimation
|
Belyakov, V.V
|
|
2000
|
40 |
12 |
p. 1997-2018
22 p.
|
artikel
|
| 10 |
Index
|
|
|
2000
|
40 |
12 |
p. 2147-2152
6 p.
|
artikel
|
| 11 |
On the optimum thickness to test dielectric reliability, in an integrated technology of power devices
|
Oussalah, Slimane
|
|
2000
|
40 |
12 |
p. 2047-2051
5 p.
|
artikel
|
| 12 |
Plasma charging damage during contact hole etch in high-density plasma etcher
|
Tsui, Bing-Yue
|
|
2000
|
40 |
12 |
p. 2039-2046
8 p.
|
artikel
|
| 13 |
Plasma-charging damage in ultra-thin gate oxide
|
Cheung, Kin P
|
|
2000
|
40 |
12 |
p. 1981-1986
6 p.
|
artikel
|
| 14 |
Rise-time effects in grounded gate nMOS transistors under transmission line pulse stress
|
Boselli, Gianluca
|
|
2000
|
40 |
12 |
p. 2061-2067
7 p.
|
artikel
|
| 15 |
The Burr type XII distribution as a failure model under various loss functions
|
Moore, Deborah
|
|
2000
|
40 |
12 |
p. 2117-2122
6 p.
|
artikel
|
| 16 |
The effect of polyimide surface chemistry and morphology on critical stress intensity factor
|
Amagai, Masazumi
|
|
2000
|
40 |
12 |
p. 2077-2086
10 p.
|
artikel
|
| 17 |
The influence of adatom diffusion on coverage and emission current fluctuations
|
Tarasenko, A.A.
|
|
2000
|
40 |
12 |
p. 2023-2031
9 p.
|
artikel
|
| 18 |
The peaks in the electric derivative curves and optic derivative curves of GaAs/GaAlAs high-power QW lasers
|
Liyun, Qi
|
|
2000
|
40 |
12 |
p. 2123-2128
6 p.
|
artikel
|
| 19 |
Time-dependent dielectric wearout technique with temperature effect for reliability test of ultrathin (<2.0 nm) single layer and dual layer gate oxides
|
Wu, Yider
|
|
2000
|
40 |
12 |
p. 1987-1995
9 p.
|
artikel
|
| 20 |
Total dose response studies of n-channel SOI MOSFETs for low power CMOS circuits
|
Srivastava, A.
|
|
2000
|
40 |
12 |
p. 2111-2115
5 p.
|
artikel
|
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