| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Additional microstructural analysis on the samples examined in the paper ‘Are high resolution resistometric methods really useful for the early detection of electromigration damage?’
|
Balboni, R.
|
|
1999
|
39 |
4 |
p. 537-540
4 p.
|
artikel
|
| 2 |
A model of 1/f noise spectrum generation in granular structures
|
Takagi, Keiji
|
|
1999
|
39 |
4 |
p. 541-544
4 p.
|
artikel
|
| 3 |
A simulation-based semiconductor chip yield model incorporating a new defect cluster index
|
Jun, Chi-Hyuck
|
|
1999
|
39 |
4 |
p. 451-456
6 p.
|
artikel
|
| 4 |
Book review
|
|
|
1999
|
39 |
4 |
p. 545-546
2 p.
|
artikel
|
| 5 |
Book review
|
|
|
1999
|
39 |
4 |
p. 547-
1 p.
|
artikel
|
| 6 |
Chip Scale Package (CSP) solder joint reliability and modeling
|
Amagai, M.
|
|
1999
|
39 |
4 |
p. 463-477
15 p.
|
artikel
|
| 7 |
Development of test vehicles for evaluating plastic-encapsulant reliability and improving thermal conductivity of encapsulant materials 1 1 © 1997 IMAPS—International Microelectronics and Packaging Society, formerly ISHM—The Microelectronics Society. Reprinted with permission from the Proceedings of the 1997 International Symposium on Microelectronics, pp. 314–321, October 14–16, 1997, Philadelphia, Pennsylvania.
|
Enlow, Leonard R
|
|
1999
|
39 |
4 |
p. 515-527
13 p.
|
artikel
|
| 8 |
Erratum
|
|
|
1999
|
39 |
4 |
p. 549-
1 p.
|
artikel
|
| 9 |
Physical structure of light-emitting porous polycrystalline silicon thin films
|
Han, P.G
|
|
1999
|
39 |
4 |
p. 457-462
6 p.
|
artikel
|
| 10 |
Process characterisation of hot-carrier-induced β degradation in bipolar transistors for BiCMOS
|
Arshak, A.
|
|
1999
|
39 |
4 |
p. 479-485
7 p.
|
artikel
|
| 11 |
Single transistor technique for interface trap density measurement in irradiated MOS devices
|
Pershenkov, V.S
|
|
1999
|
39 |
4 |
p. 497-505
9 p.
|
artikel
|
| 12 |
Slow-trap profiling of NO and N2O nitrided oxides grown on Si and SiC substrates
|
Dimitrijev, Sima
|
|
1999
|
39 |
4 |
p. 441-449
9 p.
|
artikel
|
| 13 |
Stress-induced voiding in stacked tungsten via structure
|
Domae, Shinichi
|
|
1999
|
39 |
4 |
p. 507-513
7 p.
|
artikel
|
| 14 |
Threshold voltage model for deep-submicron fully depleted SOI MOSFETs with back gate substrate induced surface potential effects
|
Imam, Mohamed A
|
|
1999
|
39 |
4 |
p. 487-495
9 p.
|
artikel
|
| 15 |
Voltage transients in electromigration noise measurement data
|
Head, L.M
|
|
1999
|
39 |
4 |
p. 529-535
7 p.
|
artikel
|
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