| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of space and energy distribution of stress-induced oxide traps
|
Spinelli, A.S.
|
|
1999
|
39 |
2 |
p. 215-219
5 p.
|
artikel
|
| 2 |
A study of the interface states in MIS-structures with thin SiO2 and SiO x N y layers using deep level transient spectroscopy
|
Beyer, R.
|
|
1999
|
39 |
2 |
p. 297-302
6 p.
|
artikel
|
| 3 |
Breakdown properties of metal/NIDOS SiO2/silicon structures
|
Temple-Boyer, P
|
|
1999
|
39 |
2 |
p. 187-190
4 p.
|
artikel
|
| 4 |
Characterization of oxide etching and wafer cleaning using vapor phase anhydrous hydrofluoric acid and ozone
|
Bauer, A.J.
|
|
1999
|
39 |
2 |
p. 311-316
6 p.
|
artikel
|
| 5 |
Comparison between the properties of amorphous and crystalline Ta2O5 thin films deposited on Si
|
Chaneliere, C.
|
|
1999
|
39 |
2 |
p. 261-268
8 p.
|
artikel
|
| 6 |
Degradation of electron irradiated MOS capacitors
|
Candelori, A.
|
|
1999
|
39 |
2 |
p. 227-233
7 p.
|
artikel
|
| 7 |
Density functional theory applied to the calculation of dielectric constant of low-k materials
|
Courtot-Descharles, A.
|
|
1999
|
39 |
2 |
p. 279-284
6 p.
|
artikel
|
| 8 |
Dielectric and ferroelectric properties of Perovskite Pb(Zr, Ti)O3 films deposited by sputtering on Si substrate
|
Vélu, G.
|
|
1999
|
39 |
2 |
p. 241-250
10 p.
|
artikel
|
| 9 |
Dielectric characterization of ferroelectric thin films deposited on silicon
|
Legrand, C.
|
|
1999
|
39 |
2 |
p. 251-256
6 p.
|
artikel
|
| 10 |
Editorial
|
|
|
1999
|
39 |
2 |
p. 159-
1 p.
|
artikel
|
| 11 |
Electric breakdowns and breakdown mechanisms in ultra-thin silicon oxides
|
Jackson, J.C
|
|
1999
|
39 |
2 |
p. 171-179
9 p.
|
artikel
|
| 12 |
Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides
|
Goguenheim, D.
|
|
1999
|
39 |
2 |
p. 165-169
5 p.
|
artikel
|
| 13 |
Gate oxide reliability improvement related to dry local oxidation of silicon
|
Bellutti, P
|
|
1999
|
39 |
2 |
p. 181-185
5 p.
|
artikel
|
| 14 |
High electrical resistivity of CVD-diamond
|
Manca, J.V
|
|
1999
|
39 |
2 |
p. 269-273
5 p.
|
artikel
|
| 15 |
Low pressure chemical vapor deposition from TEOS–NH3 mixtures: thermochemical study of the process considering kinetic data
|
Vahlas, C.
|
|
1999
|
39 |
2 |
p. 303-309
7 p.
|
artikel
|
| 16 |
Measurement and modeling of the annealing kinetics of stress induced leakage current in ultra-thin oxides
|
Riess, P.
|
|
1999
|
39 |
2 |
p. 203-207
5 p.
|
artikel
|
| 17 |
MOCVD of ferroelectric thin films
|
Schmidt, C
|
|
1999
|
39 |
2 |
p. 257-260
4 p.
|
artikel
|
| 18 |
Modelling methodology of silicon oxidation from quantum calculations to Monte Carlo level
|
Estève, A
|
|
1999
|
39 |
2 |
p. 275-278
4 p.
|
artikel
|
| 19 |
ONO and NO interpoly dielectric conduction mechanisms
|
De Salvo, B.
|
|
1999
|
39 |
2 |
p. 235-239
5 p.
|
artikel
|
| 20 |
On positive charge annihilation and stress-induced leakage current decrease
|
Meinertzhagen, A
|
|
1999
|
39 |
2 |
p. 191-196
6 p.
|
artikel
|
| 21 |
On the correlation between SILC and hole fluence throughout the oxide
|
Scarpa, A.
|
|
1999
|
39 |
2 |
p. 197-201
5 p.
|
artikel
|
| 22 |
Optical characterization of ion implantation in Si and Si/SiO2 structures: spectroellipsometric (SE) and second harmonic generation (SHG) results
|
Buiu, O.
|
|
1999
|
39 |
2 |
p. 291-295
5 p.
|
artikel
|
| 23 |
Optical dispersion analysis within the IR range of thermally grown and TEOS deposited SiO2 films
|
Davazoglou, Dimitris
|
|
1999
|
39 |
2 |
p. 285-289
5 p.
|
artikel
|
| 24 |
Stress-induced leakage current in very thin dielectric layers: some limitations to reliability extrapolation modeling
|
Bruyre, S.
|
|
1999
|
39 |
2 |
p. 209-214
6 p.
|
artikel
|
| 25 |
Switching events in the soft breakdown I–t characteristic of ultra-thin SiO2 layers
|
Miranda, E
|
|
1999
|
39 |
2 |
p. 161-164
4 p.
|
artikel
|
| 26 |
Thin stoichiometric silicon nitride prepared by r.f. reactive sputtering
|
Qian, F
|
|
1999
|
39 |
2 |
p. 317-323
7 p.
|
artikel
|
| 27 |
Total dose dependence of radiation-induced leakage current in ultra-thin gate oxides
|
Ceschia, M.
|
|
1999
|
39 |
2 |
p. 221-226
6 p.
|
artikel
|
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