| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A different approach to the analysis of data in life-tests of laser diodes
|
Bonfiglio, A.
|
|
1998
|
38 |
5 |
p. 767-771
5 p.
|
artikel
|
| 2 |
Availability modeling of energy management systems
|
Fricks, Ricardo M.
|
|
1998
|
38 |
5 |
p. 727-743
17 p.
|
artikel
|
| 3 |
Better graphs for dependability modeling
|
Schneeweiss, Winfrid G.
|
|
1998
|
38 |
5 |
p. 807-820
14 p.
|
artikel
|
| 4 |
Book review
|
|
|
1998
|
38 |
5 |
p. 841-
1 p.
|
artikel
|
| 5 |
Book review
|
|
|
1998
|
38 |
5 |
p. 839-840
2 p.
|
artikel
|
| 6 |
Carrier mobility in inversion layers of Si–thin Ta2O5 structures
|
Atanassova, E.
|
|
1998
|
38 |
5 |
p. 833-837
5 p.
|
artikel
|
| 7 |
Characterization of the silicon nitride–thermal oxide interface in oxide–nitride–oxide structures by ELS, XPS, ellipsometry, and numerical simulation
|
Gritsenko, V.A.
|
|
1998
|
38 |
5 |
p. 745-751
7 p.
|
artikel
|
| 8 |
Electrical properties of thin Ta2O5 films obtained by thermal oxidation of Ta on Si
|
Atanassova, E.
|
|
1998
|
38 |
5 |
p. 827-832
6 p.
|
artikel
|
| 9 |
Extraction method for source series resistance and transverse field mobility reduction coefficient using the MOSFET saturation region
|
Ionescu, A.M.
|
|
1998
|
38 |
5 |
p. 753-758
6 p.
|
artikel
|
| 10 |
Facet heating and axial temperature profiles in high-power GaAlAs/GaAs laser diodes
|
Menzel, U.
|
|
1998
|
38 |
5 |
p. 821-825
5 p.
|
artikel
|
| 11 |
Influence of the silicon nitride oxidation on the performances of NCLAD isolation 1 Expanded version of a talk presented at the European Solid State Device Research Conference, ESSDERC'96, Bologna, Italy, September 1996. 1
|
Tixier, A.
|
|
1998
|
38 |
5 |
p. 795-805
11 p.
|
artikel
|
| 12 |
Long-term base current instability in AlGaAs/GaAs HBTs: physical mechanisms, modeling, and SPICE simulation
|
Liou, J.J.
|
|
1998
|
38 |
5 |
p. 709-725
17 p.
|
artikel
|
| 13 |
The electrical properties of Al/Ni/Ge/n-GaAs interfaces
|
Dávid, L.
|
|
1998
|
38 |
5 |
p. 787-793
7 p.
|
artikel
|
| 14 |
Transient behavior and low V DS hysteresis in PD SOI MOSFETs
|
Perron, L.M
|
|
1998
|
38 |
5 |
p. 759-765
7 p.
|
artikel
|
| 15 |
Use of C-SAM acoustical microscopy in package evaluations and failure analysis
|
Atkins, S
|
|
1998
|
38 |
5 |
p. 773-785
13 p.
|
artikel
|
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