Influence of the silicon nitride oxidation on the performances of NCLAD isolation
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Expanded version of a talk presented at the European Solid State Device Research Conference, ESSDERC'96, Bologna, Italy, September 1996.
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Titel:
Influence of the silicon nitride oxidation on the performances of NCLAD isolation
1
Expanded version of a talk presented at the European Solid State Device Research Conference, ESSDERC'96, Bologna, Italy, September 1996.
1
Auteur:
Tixier, A. Senez, V. Baccus, B. Marmiroli, A. Colpani, P. Rebora, A. Carnevale, G.P.