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                                       Details for article 11 of 15 found articles
 
 
  Influence of the silicon nitride oxidation on the performances of NCLAD isolation 1 Expanded version of a talk presented at the European Solid State Device Research Conference, ESSDERC'96, Bologna, Italy, September 1996. 1
 
 
Title: Influence of the silicon nitride oxidation on the performances of NCLAD isolation 1 Expanded version of a talk presented at the European Solid State Device Research Conference, ESSDERC'96, Bologna, Italy, September 1996. 1
Author: Tixier, A.
Senez, V.
Baccus, B.
Marmiroli, A.
Colpani, P.
Rebora, A.
Carnevale, G.P.
Appeared in: Microelectronics reliability
Paging: Volume 38 (1998) nr. 5 pages 11 p.
Year: 1998
Contents:
Publisher: Elsevier Science Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 11 of 15 found articles
 
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